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    Untitled

    Abstract: No abstract text available
    Text: KM44C4110 CMOS DRAM 4 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode Write Per Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C4110 is a high speed CMOS 4 ,1 9 4 ,3 0 4 X 4 Dynamic Random Access Memory. Its design is optimized for high performance applications


    OCR Scan     		PDF KM44C4110 KM44C4110 24-LEAD

    Untitled

    Abstract: No abstract text available
    Text: SAM S UN G E L E C T R O N I C S INC 7RL.41MS D D l b S3 5 51b « S U G K b?E D CMOS DRAM KM44C4110 4 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode Write Per Mode GENERAL DESCRIPTION FEATURES • Performance range: I rac • • • • • • • •


    OCR Scan     		PDF KM44C4110 KM44C4110-6 110ns KM44C4110-7 130ns KM44C4110-8 KM44C4110 150ns

    4mx4

    Abstract: 24-PIN
    Text: M E M O R Y IC s Dynamic RAM Capacity FUNCTION G UIDE Continued Part Number Organization KM44C4002T Speed(ns) Technology CMOS Static Column CMOS CMOS CMOS Static Column Static Column Static Column CMOS CMOS Static Column Static Column 24 Pin TSOP-ll(Reverse)


    OCR Scan     		PDF KM44C4002T KM44C4002TR KM44C4102J KM44C4102T KM44C4102TR KM44C4010J KM44C4010T KM44C4010TR KM44C4110J KM44C4110T 4mx4 24-PIN