Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    KM44S16030B Search Results

    KM44S16030B Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM44S16030BT-G/F10 Samsung Electronics 100MHz, -1.0 to 4.6V, 1W, 50mA, 4M x 4-bit x 4 banks synchronous CMOS SDRAM Scan PDF
    KM44S16030BT-G_F10 Samsung Electronics 100MHz -1.0 to 4.6V 1W 50mA 4M x 4-bit x 4 banks synchronous CMOS SDRAM Scan PDF
    KM44S16030BT-G/F8 Samsung Electronics 125MHz, -1.0 to 4.6V, 1W, 50mA, 4M x 4-bit x 4 banks synchronous CMOS SDRAM Scan PDF
    KM44S16030BT-G_F8 Samsung Electronics 125MHz -1.0 to 4.6V 1W 50mA 4M x 4-bit x 4 banks synchronous CMOS SDRAM Scan PDF
    KM44S16030BT-G/FH Samsung Electronics 100MHz, -1.0 to 4.6V, 1W, 50mA, 4M x 4-bit x 4 banks synchronous CMOS SDRAM Scan PDF
    KM44S16030BT-G_FH Samsung Electronics 100MHz -1.0 to 4.6V 1W 50mA 4M x 4-bit x 4 banks synchronous CMOS SDRAM Scan PDF
    KM44S16030BT-G/FL Samsung Electronics 100MHz, -1.0 to 4.6V, 1W, 50mA, 4M x 4-bit x 4 banks synchronous CMOS SDRAM Scan PDF
    KM44S16030BT-G_FL Samsung Electronics 100MHz -1.0 to 4.6V 1W 50mA 4M x 4-bit x 4 banks synchronous CMOS SDRAM Scan PDF

    KM44S16030B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: KM44S16030B CMOS SDRAM Revision History Revision .3 November 1997 - tRDL has changed 10ns to 12ns. - Binning -10 does not meet PC100 characteristics . So AC parameter/Characteristics have changed to 64M 2nd values. Revision .4 (February 1998) - Input leakage Currents (Inputs / DQ) are changed.


    Original     		PDF KM44S16030B PC100

    Untitled

    Abstract: No abstract text available
    Text: KM44S16030B CMOS SDRAM Revision History Revision .3 November 1997 - tRDL has changed 10ns to 12ns. - Binning -10 does not meet PC100 characteristics . So AC parameter/Characteristics have changed to 64M 2nd values. Revision .4 (February 1998) - Input leakage Currents (Inputs / DQ) are changed.


    Original     		PDF KM44S16030B PC100 A10/AP

    CDC2509

    Abstract: KM44S16030BT
    Text: Preliminary KMM378S3227BT SDRAM MODULE KMM378S3227BT SDRAM DIMM 32Mx72 SDRAM DIMM with PLL & Register based on Stacked 32Mx4, 4Banks 4K Ref., 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE • Performance range The Samsung KMM378S3227BT is a 32M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung KMM378S3227BT consists of eighteen CMOS Stacked


    Original     		PDF KMM378S3227BT KMM378S3227BT 32Mx72 32Mx4, KMM378S3227BT-G8 KMM378S3227BT-GH KMM378S3227BT-GL KMM378S3227BT-G0 CDC2509 KM44S16030BT

    KMM375S1620BT-GL

    Abstract: KMM375S1620BT-G0 KMM375S1620BT-G8 KMM375S1620BT-GH
    Text: Preliminary KMM375S1620BT SDRAM MODULE KMM375S1620BT SDRAM DIMM 16Mx72 SDRAM DIMM with PLL & Register based on 16Mx4, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM375S1620BT is a 16M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung KMM375S1620BT consists of eighteen CMOS 16Mx4 bit


    Original     		PDF KMM375S1620BT KMM375S1620BT 16Mx72 16Mx4, 16Mx4 400mil 18bits 24-pin KMM375S1620BT-GL KMM375S1620BT-G0 KMM375S1620BT-G8 KMM375S1620BT-GH

    CDC2509

    Abstract: KMM378S1620CT-G0 KMM378S1620CT-G8 KMM378S1620CT-GH KMM378S1620CT-GL
    Text: Preliminary KMM378S1620CT SDRAM MODULE KMM378S1620CT 16Mx72 SDRAM DIMM with PLL & Register based on 16Mx4, 4Banks, 4K Ref. 3.3V Synch. DRAMs GENERAL DESCRIPTION FEATURE The Samsung KMM378S1620CT is a 16M bit x 72 Synchro- • Performance range nous Dynamic RAM high density memory module. The Sam-


    Original     		PDF KMM378S1620CT 16Mx72 16Mx4, KMM378S1620CT KMM378S1620CT-G8 KMM378S1620CT-GH KMM378S1620CT-GL KMM378S1620CT-G0 CDC2509 KMM378S1620CT-G0 KMM378S1620CT-G8 KMM378S1620CT-GH KMM378S1620CT-GL

    schematic circuit adsl router part list

    Abstract: 29e010 78R05 KS32C50100 SNDS100 78R33 MAX232 CPE 29e010 datasheet c-mac stp samsung ribbon
    Text: Excellence in Low-Power The way MICOM/DSP should be KS32C5000 A /KS32C50100 32-bit RISC Microcontroller for Network Solution Mar. 1999 ELECTRONICS Contents n n n Network Protocol n What is Network ? n OSI Reference Model and TCP/IP n TCP/IP Networking Software & Basic Protocol


    Original     		PDF KS32C5000 /KS32C50100 32-bit Print3ff3024 0x1a048060 0x3ff3028 0x1c04a060 0x3ff302c 0x04000380 0x3ff3030 schematic circuit adsl router part list 29e010 78R05 KS32C50100 SNDS100 78R33 MAX232 CPE 29e010 datasheet c-mac stp samsung ribbon

    CDC2509

    Abstract: KMM378S1620BT-G0 KMM378S1620BT-G8 KMM378S1620BT-GH KMM378S1620BT-GL
    Text: Preliminary KMM378S1620BT SDRAM MODULE KMM378S1620BT 16Mx72 SDRAM DIMM with PLL & Register based on 16Mx4, 4Banks, 4K Ref. 3.3V Synch. DRAMs GENERAL DESCRIPTION FEATURE • Performance range The Samsung KMM378S1620BT is a 16M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung KMM378S1620BT consists of eighteen CMOS 16M x 4 bit


    Original     		PDF KMM378S1620BT 16Mx72 16Mx4, KMM378S1620BT KMM378S1620BT-G8 KMM378S1620BT-GH KMM378S1620BT-GL KMM378S1620BT-G0 CDC2509 KMM378S1620BT-G0 KMM378S1620BT-G8 KMM378S1620BT-GH KMM378S1620BT-GL

    KMM375S3320T-G0

    Abstract: KMM375S3320T-G8 KMM375S3320T-GH KMM375S3320T-GL
    Text: Preliminary KMM375S3320T SDRAM MODULE KMM375S3320T SDRAM DIMM 32Mx72 SDRAM DIMM with PLL & Register based on 32Mx4, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM375S3320T is a 32M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung KMM375S3320T consists of eighteen CMOS 32Mx4 bit


    Original     		PDF KMM375S3320T KMM375S3320T 32Mx72 32Mx4, 32Mx4 400mil 18bits 24-pin KMM375S3320T-G0 KMM375S3320T-G8 KMM375S3320T-GH KMM375S3320T-GL

    KMM377S1620BT1-GH

    Abstract: KMM377S1620BT1-GL
    Text: Preliminary KMM377S1620BT1 SDRAM MODULE KMM377S1620BT1 SDRAM DIMM Intel 1.0 ver. Base 16Mx72 SDRAM DIMM with PLL & Register based on 16Mx4, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM377S1620BT1 is a 16M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung KMM377S1620BT1 consists of eighteen CMOS 16Mx4


    Original     		PDF KMM377S1620BT1 KMM377S1620BT1 16Mx72 16Mx4, 16Mx4 400mil 18-bits 24-pin KMM377S1620BT1-GH KMM377S1620BT1-GL

    KMM375S1620CT-G0

    Abstract: KMM375S1620CT-G8 KMM375S1620CT-GH KMM375S1620CT-GL
    Text: Preliminary KMM375S1620CT SDRAM MODULE KMM375S1620CT SDRAM DIMM 16Mx72 SDRAM DIMM with PLL & Register based on 16Mx4, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM375S1620CT is a 16M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung KMM375S1620CT consists of eighteen CMOS 16Mx4 bit


    Original     		PDF KMM375S1620CT KMM375S1620CT 16Mx72 16Mx4, 16Mx4 400mil 18bits 24-pin KMM375S1620CT-G0 KMM375S1620CT-G8 KMM375S1620CT-GH KMM375S1620CT-GL

    ka 2843

    Abstract: No abstract text available
    Text: KM44S16030B CMOS SDRAM 4M x 4Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • • • • The KM44S16030B is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 4 bits, fabricated with SAMSUNG'S high performance CMOS technol­


    OCR Scan     		PDF KM44S16030B KM44S16030B A10/AP ka 2843

    Untitled

    Abstract: No abstract text available
    Text: KM44S16030B CMOS SDRAM Revision History Revision .3 N ovem ber 1997 - tRDL has changed 10ns to 12ns. - Binning -10 does not m eet PC100 characteristics . So AC param eter/C haracteristics have changed to 64M 2nd values. Revision .4 (February 1998) - Input leakage C urrents (Inputs / DQ) are changed.


    OCR Scan     		PDF KM44S16030B PC100 a10/AP

    CDC2509

    Abstract: KMM378S1620BT-G0
    Text: Preliminary SDRAM MODULE_ KMM378S1620BT Revision History Revision 4 July 1998 - " REGE" description is changed. REV. 4 July 1998 ELECTRONiCS Preliminary KMM378S1620BT SDRAM MODULE KMM378S1620BT 16Mx72 SDRAM DIMM with PLL & Register based on 16Mx4, 4Banks, 4K Ref. 3.3V Synch. DRAMs


    OCR Scan     		PDF KMM378S1620BT 16Mx72 16Mx4, KMM378S1620BT 400mil 24-pin 200-pin CDC2509 KMM378S1620BT-G0

    CDC2509

    Abstract: No abstract text available
    Text: Preliminary SDRAM MODULE_ KMM378S1620BT Revision History Revision 4 July 1998 - " REGE" description is changed. REV. 4 July 1998 ELECTRONICS Preliminary KMM378S1620BT SDRAM MODULE KMM378S1620BT 16Mx72 SDRAM DIMM with PLL & Register based on 16Mx4, 4Banks, 4K Ref. 3.3V Synch. DRAMs


    OCR Scan     		PDF KMM378S1620BT 16Mx72 16Mx4, M378S1620BT 378S1620BT 400mil 24-pin 200-pin CDC2509

    Untitled

    Abstract: No abstract text available
    Text: SDRAM MODULE Preliminary KMM375S1620BT Revision History Revision 2 June 1998 "REGE" description is changed. REV. 2 June 1998 Preliminary KMM375S1620BT SDRAM MODULE KMM375S1620BT SDRAM DIMM 16Mx72 SDRAM DIMM with PLL & Register based on 16Mx4, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD


    OCR Scan     		PDF KMM375S1620BT KMM375S1620BT 16Mx72 16Mx4, M375S1620BT 375S1620BT 16Mx4 KMM375S1620BT-G8 400mil

    KMM377S1620BT1-GH

    Abstract: No abstract text available
    Text: Preliminary KMM377S1620BT1 SDRAM MODULE KMM377S1620BT1 SDRAM DIMM Intel 1.0 ver. Base 16Mx72 SDRAM DIMM with PLL & Register based on 16Mx4, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM377S1620BT1 is a 16M bit x 72 Synchro­


    OCR Scan     		PDF KMM377S1620BT1 KMM377S1620BT1 16Mx72 16Mx4, 16Mx4 400mil 18-bits 24-pin KMM377S1620BT1-GH

    samsung BCK0

    Abstract: No abstract text available
    Text: SDRAM MODULE Preliminary KMM37SS3320T Revision History Revision 3 May 1998 - CLK Input Cap. is added by PLL Input Cap. (27pF) REV. 3 May '98 ELECTRONICS Preliminary KMM375S3320T SDRAM MODULE KMM375S3320T SDRAM DIMM 32Mx72 SDRAM DIMM with PLL & Register based on 32Mx4, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD


    OCR Scan     		PDF KMM37SS3320T KMM375S3320T KMM375S3320T 32Mx72 32Mx4, M375S3320T 32Mx4 400mH 18bits samsung BCK0

    Untitled

    Abstract: No abstract text available
    Text: Preliminary KMM375S1620CT SDRAM MODULE KMM375S1620CT SDRAM DIMM 16Mx72 SDRAM DIMM with PLL & Register based on 16Mx4, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION • Performance range The Samsung KMM375S1620CT is a 16M bit x 72 Synchro­


    OCR Scan     		PDF KMM375S1620CT KMM375S1620CT 16Mx72 16Mx4, 16Mx4 400mil 18bits 24-pin

    Untitled

    Abstract: No abstract text available
    Text: SDRAM MODULE Preliminary KMM377S1620BT1 Revision History Revision 4 May 1998 - CLK Input Cap. is added by PLL Input Cap. (27pF) Revision 5 (July 1998) - "REGE" description is changed. Revision 6 (November 1998) - Corrected DQ# at the input of SDRAM(D5) as DQ16-19 @Functional Block Diagram


    OCR Scan     		PDF KMM377S1620BT1 DQ16-19 KMM377S1620BT1 16Mx72 16Mx4, 16Mx4 KM44S16030BT

    Untitled

    Abstract: No abstract text available
    Text: SDRAM MODULE Preliminary KMM375S1620BT Revision History Revision 2 June 1998 "REGE" description is changed. REV. 2 June 1998 ELECTRG&HCS Preliminary KMM375S1620BT SDRAM MODULE KMM375S1620BT SDRAM DIMM 16M x72 SDRAM DIMM w ith PLL & R egister based on 16Mx4, 4B anks 4K Ref., 3.3V Synchronous DRAMs with SPD


    OCR Scan     		PDF KMM375S1620BT KMM375S1620BT 16Mx4, M375S1620BT 375S1620BT 16Mx4 400mil 20-bits 24-pin