Untitled
Abstract: No abstract text available
Text: KM44C1004C, KM44V1004C CMOS DRAM 1M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access
|
OCR Scan
|
PDF
|
KM44C1004C,
KM44V1004C
7TbM14E
|
Untitled
Abstract: No abstract text available
Text: CMOS DRAM KM44V1004C/CL/CLL 1 M x 4 Bit CMOS Dynamic RAM with Extended Data Out GENERAL DESCRIPTION FEATURES • Performance range: tRAC tCAC tac tHPC KM44V1004C/CL/CLL-6 60ns 15ns 110ns 24ns KM44V1004C/CL/CLL-7 70ns 20ns 130ns 29ns KM44V1004C/CL/CLL-8 80ns
|
OCR Scan
|
PDF
|
KM44V1004C/CL/CLL
KM44V1004C/CL/CLL-6
110ns
KM44V1004C/CL/CLL-7
130ns
KM44V1004C/CL/CLL-8
150ns
cycles/16ms
cycles/128m:
20-LEAD
|
Untitled
Abstract: No abstract text available
Text: KM44C1004C, KM44V1004C CMOS DRAM 1 M x 4 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access
|
OCR Scan
|
PDF
|
KM44C1004C,
KM44V1004C
b41H2
Q0231Ã
|
Untitled
Abstract: No abstract text available
Text: KM44C1004C, KM44V1004C CMOS DRAM 1 M x 4 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access
|
OCR Scan
|
PDF
|
KM44C1004C,
KM44V1004C
|
Untitled
Abstract: No abstract text available
Text: KM44C1004C, KM44V1004C CMOS DRAM 1M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION T his is a fa m ily of 1,048,576 x 4 bit E xtended Data O ut CM O S D R A M s. E xtended D ata O ut o ffe rs high speed random acce ss of m em ory cells w ithin the sam e row. Pow er supply volta g e + 5 .0V or +3.3V , access
|
OCR Scan
|
PDF
|
KM44C1004C,
KM44V1004C
|
KM44V1004CJ
Abstract: 44V1004 ASX12
Text: CMOS DRAM KM44V1004C/C L/CLL 1M x 4 Bit CMOS Dynamic RAM with Extended Data Out FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44V1004C/CL/CLL is a CMOS high sp e e d 1 ,0 4 8 ,5 7 6 x 4 D y n a m ic R a n d o m A c c e s s Memory. Its design is optimized for high performance
|
OCR Scan
|
PDF
|
KM44V1004C/C
KM44V1004C/CL/CLL
20-LEAD
KM44V1004C/CL/CLL
KM44V1004CJ
44V1004
ASX12
|
be5e
Abstract: 31DQ3
Text: KM44C1004C, KM44V1004C CMOS DRAM 1 M x 4 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION T his is a fa m ily of 1 ,048,576 x 4 bit E xtended Data O ut CM O S D R A M s. E xtended Data O ut o ffe rs high speed random acce ss of m em ory cells w ithin the sam e row. Power supply vo lta g e + 5 .0V or +3.3V , access
|
OCR Scan
|
PDF
|
KM44C1004C,
KM44V1004C
be5e
31DQ3
|
KM44C4000aS 6
Abstract: KM44C4000AS KM44C4000A-S km44c4100as KM48V2100AL KM416V256BL
Text: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION DRAM 4 M b it 4Mx1 1Mx4 KM41C4000C-6 KM41C4000C-7 " KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7 KM41C4000CL-8 - KM41C4002C-5 KM41C4002C-6 KM41C4002C-7 KM41C4002C-8 - KM41V4000C-6 KM41V4000C-7 KM41V4000C-8 - KM41V4000CL-6
|
OCR Scan
|
PDF
|
KM41C4000C-5
KM41C4000CL-5
KM41C4002C-5
KM41C4000C-6
KM41C4000C-7
KM41C4000CL-7
KM41C4002C-7
KM41V4000C-7
KM41V4000CL-7
KM41C4000C-8
KM44C4000aS 6
KM44C4000AS
KM44C4000A-S
km44c4100as
KM48V2100AL
KM416V256BL
|
Untitled
Abstract: No abstract text available
Text: TABLE OF CONTENTS I. PRODUCT GUIDE 1. Introduction. 11 2. Product G u id e . 18 3. DRAM Ordering System. 23
|
OCR Scan
|
PDF
|
KM41C1000D
KM44C256D.
KM41C4000C
KM41V4000C.
|
KM418C256
Abstract: KM48C2100AL KM416C254 KM44V4100AL KM44C1003
Text: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE DRAM Density 1M bil Org. 1Mx1 Power Supply 5V±10% Part Number KM41C1000D# Speed(ns) 60/70/80 Features Fast Page 5V±10% KM44C256D# 60/70/80 Fast Page 4Mx1 5V±10% KM41C4000C# 50/60/70/80 Fast Page KM41C4002C# 60/70/80
|
OCR Scan
|
PDF
|
KM41C1000D#
KM41C10OOD-L#
256Kx4)
256Kx4
KM44C256D#
KM44C256D-L#
KM41C4000C#
KM41C4000CL#
KM41C4002C#
KM41V4000C#
KM418C256
KM48C2100AL
KM416C254
KM44V4100AL
KM44C1003
|
KM44V1004CJ
Abstract: No abstract text available
Text: DRAM MODULE KMM372F124AJ KMM372F124AJ with EDO Mode 1Mx72 DRAM DIMM with ECC based on 1Mx16 & 1Mx4, 1K Refresh, 3.3V G EN ERA L DESCRIPTIO N FEATURES The Samsung KMM372F124AJ is a 1M bit x 72 Dynamic RAM high density memory module. The Samsung KMM372F124AJ consists of four CMOS
|
OCR Scan
|
PDF
|
KMM372F124AJ
KMM372F124AJ
1Mx72
1Mx16
1Mx16bit
400mil
300mil
16bits
KM44V1004CJ
|
1mx1 DRAM DIP
Abstract: KM44V1000C KM41V4000CL
Text: FUNCTION GUIDE MEMORY ICS DRAM For Reference Org. Density 1M bit pow*«\ Supply jNPPNÍ 1Mx1 5V±10% 256KX 4 5V±10% KM44C2Ö6D# 128Kx8 5V±10% KM48C128# KM41C1ÖOOD# I ' 60/70/80 Fast Page P:18 Pin DIP (1Mx1) 60/70/80 Fast Page J:20 Pin SOJ 55/60/70 Fast Page
|
OCR Scan
|
PDF
|
KM41C1
256Kx4)
00D-L#
256KX
KM44C2
KM44C256D-L#
128Kx8
KM48C128#
KM48C128
1mx1 DRAM DIP
KM44V1000C
KM41V4000CL
|
1004CL
Abstract: 44V16 366F 44C40 372V3280 2100B-7 M5368 KMM5368103B 44v16100 dram module kmm 2mx32
Text: FUNCTION GUIDE 1. INTRODUCTION DRAM Module I. Single In-Line M em ory M odule SIMM l-i. Fast Page ( FP ) Mode 5 V [T6M~Based j- f — ftM x 3 g "KMM5321200BW/BWG-6 H ~KM M 5321200BW/BWG-' -|lM x 3 6 [2MX32 KMM5322100BKU/BKUG-5 K —[2Mx36 H H | KMM5322100BKÜ/BKÛ g ^K 1<M M 5322-| OOBKU/BKUG3-7
|
OCR Scan
|
PDF
|
KMM5321200BW/BWG-6
5321200BW/BWG-'
KMM5361203BW/8
KMM5322200BW/BWG-6
KMM5322100BKU/BKUG-5
MM5361203BW/BWG-7
KMM5322200BW/BWG-7
2MX32
KMM5322100BK
2Mx36
1004CL
44V16
366F
44C40
372V3280
2100B-7
M5368
KMM5368103B
44v16100
dram module kmm 2mx32
|
Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM372F124AJ KMM372F124AJ with EDO Mode 1Mx72 DRAM DIMM with ECC based on 1Mx16 & 1Mx4, 1K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F124AJ is a 1M bit x 72 Dynamic RAM high density memory module. The Samsung KMM372F124AJ consists of four CMOS
|
OCR Scan
|
PDF
|
KMM372F124AJ
KMM372F124AJ
1Mx72
1Mx16
1Mx16bit
400mil
300mil
16bits
|
|
|
KMCJ532512
Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
Text: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7
|
OCR Scan
|
PDF
|
KM41C1000C-6
KM41C1000CL-6
KM41C1000CSL-6
KM44C256C-6
KM44C256CL-6
KM44C256CSL-6
KM41C4000C-5
KM41C4000C-6
KM41C4000C-7
KM41C4000C-8
KMCJ532512
KM23C1000-20
KM28C64B
KMM594
KM718B90-12
zip 40pin
30-pin simm memory "16m x 8"
KM41C4000C-6
KM41C16000ALL
KM48V2104AL
|
KM416C60-7
Abstract: KM48C2104B KM416C60-6 KM48C2004B dram 64kx1 km416c60 KM44V1004CL-7
Text: General Information CMOS DRAM 1. Introduction j KM41C1000D-6 1M bit KM41C1000D-7 KM41C1000D-8 I KM41C1000D-L6|—¡ KM41C1000D-L7[— j KM41C1000D-L8 1 4M bit M 64Kx1« 4Mx1 KM48C124-55 —j KM48C124-6 KM48C124-7 KM416C60-55 — KM416C60-6 KM416C60-7 KM416C64-55
|
OCR Scan
|
PDF
|
KM41C1000D-6
KM41C1000D-7
KM41C1000D-8
KM41C1000D-L6
KM41C1000D-L7
KM41C1000D-L8
KM48C124-55
KM48C124-6
KM416C60-6
KM416C64-6
KM416C60-7
KM48C2104B
KM48C2004B
dram 64kx1
km416c60
KM44V1004CL-7
|
km44c2560
Abstract: KM48V2104B-6 KM44C16004A-5
Text: MEMORY ICs FUNCTION GUIDE DRAM For reference 1M bit 258KX4 KM41C1000D-6 —i KM41C1000D-7 KM41C1000D-L6 —i KM41C1000D-L7 KM44C2560-6 —j KM44C256D-7 KM44C256D-L6 1M B/W r , 128KX8 • KM48C128-55 —\ KM48C128-6 — KM41C1000D-L6 - KM44C256D-8 i KM44C256D-L8
|
OCR Scan
|
PDF
|
KM41C1000D-6
KM41C1000D-L6
KM41C1000D-7
KM41C1000D-L7
KM44C256D-7
KM44C256D-L7
KM41C1000D-8
258KX4
KM44C2560-6
km44c2560
KM48V2104B-6
KM44C16004A-5
|
Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM374F124AJ KMM374F124AJ EDO Mode without buffer 1Mx72 DRAM DIMM with ECC based on 1Mx16 & 1Mx4, 1K Refresh, 3.3V G EN ERA L D ESCRIPTIO N FEATURES The Samsung KMM374F124AJ is a 1M bit x 72 Dynamic RAM high density memory module. The Samsung KMM374F124AJ consists of four CMOS
|
OCR Scan
|
PDF
|
KMM374F124AJ
KMM374F124AJ
1Mx72
1Mx16
1Mx16bit
400mil
300mil
168-pin
|
