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    KM44V16104 Price and Stock

    Samsung Semiconductor KM44V16104BS-6

    Dynamic RAM, EDO, 16M x 4, 32 Pin, Plastic, TSOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components KM44V16104BS-6 510
    • 1 $1.25
    • 10 $1.25
    • 100 $0.625
    • 1000 $0.5
    • 10000 $0.5
    		Buy Now

    Samsung Electronics Co. Ltd KM44V16104CK-6

    IN STOCK SHIP TODAY
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    Component Electronics, Inc KM44V16104CK-6 2
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    KM44V16104 Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM44V16104BK-45 Samsung Electronics 16M x 4-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM44V16104BK-5 Samsung Electronics 16M x 4-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM44V16104BK-6 Samsung Electronics 16M x 4-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM44V16104BK-L-45 Samsung Electronics 16M x 4-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM44V16104BK-L-5 Samsung Electronics 16M x 4-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM44V16104BK-L-6 Samsung Electronics 16M x 4-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM44V16104BS-45 Samsung Electronics 16M x 4-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM44V16104BS-5 Samsung Electronics 16M x 4-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM44V16104BS-6 Samsung Electronics 16M x 4-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM44V16104BS-L-45 Samsung Electronics 16M x 4-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM44V16104BS-L-6 Samsung Electronics 16M x 4-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM44V16104CK-45 Samsung Electronics 16M x 4-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM44V16104CK-L-45 Samsung Electronics 16M x 4-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM44V16104CS-45 Samsung Electronics 16M x 4-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM44V16104CS-6 Samsung Electronics 16M x 4-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM44V16104CS-L-45 Samsung Electronics 16M x 4-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM44V16104CS-L-5 Samsung Electronics 16M x 4-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM44V16104CS-L-6 Samsung Electronics 16M x 4-Bit CMOS Dynamic RAM with Extended Data Out Original PDF

    KM44V16104 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    3125uS

    Abstract: No abstract text available
    Text: KM44V16004B, KM44V16104B CMOS DRAM 16M x 4bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5, or -6), power consumption(Normal


    Original     		PDF KM44V16004B, KM44V16104B 16Mx4 400mil 3125uS

    Untitled

    Abstract: No abstract text available
    Text: KM44V16004C,KM44V16104C CMOS DRAM 16M x 4bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5, or -6), power consumption(Normal


    Original     		PDF KM44V16004C KM44V16104C 16Mx4 400mil

    km44v161

    Abstract: No abstract text available
    Text: KM44V16004B, KM44V16104B CMOS DRAM 16M x 4bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5, or -6), power consumption(Normal


    Original     		PDF KM44V16004B, KM44V16104B 16Mx4 400mil km44v161

    KMM372F3200BS1

    Abstract: KMM372F3280BS1 KM44V16104
    Text: KMM372F320 8 0BS1 DRAM MODULE KMM372F320(8)0BS1 EDO Mode 32M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F320(8)0B1 is a 32Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F320(8)0B1 consists of thirty-six CMOS 16Mx4bits


    Original     		PDF KMM372F320 16Mx4, 32Mx72bits 16Mx4bits 400mil 168-pin KMM372F3200BS1 KMM372F3280BS1 KM44V16104

    KMM372F1600BK

    Abstract: KMM372F1600BS KMM372F1680BK KMM372F1680BS MIC29750-5.0BK
    Text: KMM372F160 8 0BK/BS DRAM MODULE KMM372F160(8)0BK/BS EDO Mode 16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V FEATURES GENERAL DESCRIPTION The Samsung KMM372F160(8)0B is a 16Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F160(8)0B consists of eighteen CMOS 16Mx4bits


    Original     		PDF KMM372F160 16Mx4, 16Mx72bits 16Mx4bits 400mil 168-pin KMM372F1600BK KMM372F1600BS KMM372F1680BK KMM372F1680BS MIC29750-5.0BK

    Untitled

    Abstract: No abstract text available
    Text: KMM372F320 8 0CK4 DRAM MODULE KMM372F320(8)0CK4 EDO Mode 32M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F320(8)0CK4 is a 32Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F320(8)0CK4 consists of thirty-six CMOS 16Mx4bits


    Original     		PDF KMM372F320 16Mx4, 32Mx72bits 16Mx4bits 400mil 168-pin

    KMM372F3200CS1

    Abstract: KMM372F3280CS1
    Text: KMM372F320 8 0CS1 DRAM MODULE ABSOLUTE MAXIMUM RATINGS * Item Voltage on any pin relative VSS Voltage on VCC supply relative to VSS Storage Temperature Power Dissipation Short Circuit Output Current Symbol Rating Unit VIN, VOUT VCC Tstg PD IOS -0.5 to +4.6


    Original     		PDF KMM372F320 000DIA± 150Max 81Max) 16Mx4 KMM372F3200CS1 KM44V16104CS. KMM372F3280CS1 KM44V16004CS. 01Max

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM366F160 8 0BK3 Revision History Version 0.0(Nov. 1997) • Changed PCB for signal integrity. • Changed Module Part No. from KMM366F160(8)0BK to KMM366F160(8)0BK3 caused by PCB revision . -2- Rev. 0.0 (Nov. 1997) DRAM MODULE KMM366F160(8)0BK3


    Original     		PDF KMM366F160 16Mx4, 16Mx64bits 16Mx4bits

    Untitled

    Abstract: No abstract text available
    Text: KM44V16004B, KM44V16104B CMOS DRAM 1 6 M x4b it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 iait Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5, or -6), power consumption(Normal


    OCR Scan     		PDF KM44V16004B, KM44V16104B 16Mx4

    KM44V16104A

    Abstract: 7t41hh a5e 104
    Text: KM44V16004A, KM44V16104A CMOS DRAM 16M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 bit Extended Data O ut M ode CM OS DRAM s. Extended Data Out Mode otters high speed random access of m em ory cells within the sam e row. Refresh cycle 4K Ref. or 8K Ref. ,


    OCR Scan     		PDF KM44V16004A, KM44V16104A 16Mx4 KM44V16104A 7t41hh a5e 104

    Untitled

    Abstract: No abstract text available
    Text: KM44V16004A, KM44V16104A CMOS DRAM 1 6 M x 4 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ret. or 8K Ref. ,


    OCR Scan     		PDF KM44V16004A, KM44V16104A 16Mx4

    Untitled

    Abstract: No abstract text available
    Text: KM44V16004C,KM44V16104C CMOS DRAM 16M x 4bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION T his is a fam ily of 16 ,777,216 x 4 bit Extended Data O ut M ode C M O S DR AM s. Extended Data O ut M ode offers high speed random access o f m em ory cells w ithin the sam e row. R efresh cycle 4K Ref. o r 8K Ref. , access tim e (-45, -5, o r -6), po w e r co n sum p tion(N orm a l


    OCR Scan     		PDF KM44V16004C KM44V16104C 400mil

    k2917

    Abstract: No abstract text available
    Text: KM44V16004C,KM44V16104C CMOS DRAM 1 6 M x 4 b it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5, or -6), power consumption(Normal


    OCR Scan     		PDF KM44V16004C KM44V16104C 400mil k2917

    44v16104

    Abstract: No abstract text available
    Text: KM44V16004B, KM44V16104B CMOS DRAM 16M x4 b it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a fam ily of 16,777,216 x 4 bit Extended Data O ut Mode CMOS DRAMs. Extended Data O ut Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5, or -6), power consum ption(Norm al


    OCR Scan     		PDF KM44V16004B, KM44V16104B 16Mx4 400mil 44v16104

    KM44V16104A

    Abstract: No abstract text available
    Text: KM44V16004A, KM44V16104A CMOS DRAM 16M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. ,


    OCR Scan     		PDF KM44V16004A, KM44V16104A 16Mx4 KM44V16104A

    Untitled

    Abstract: No abstract text available
    Text: KM44 V 1 6004 AS CMOS DRAM ELECTRONICS 1 6 M x 4 B i t CMOS Dynamic HAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. ,


    OCR Scan     		PDF 16Mx4 pM44V16004AS KM44V16004AS

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM372F320 8 0BS1 KMM372F320(8)0BS1 EDO Mode 32M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F320(8)0B1 is a 32Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F320(8)0B1 consists of thirty-six CMOS 16Mx4bits


    OCR Scan     		PDF KMM372F320 16Mx4, 32Mx72bits 16Mx4bits 400mil 168-pin

    Untitled

    Abstract: No abstract text available
    Text: KMM372F3200AK/AS KMM372F3280AK/AS DRAM MODULE KMM372F3200AK/AS & KMM372F3280AK/AS Fast Page with EDO Mode 32Mx72 DRAM DIMM with ECC based on 16Mx4, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F320 8 0A is a 32M bit x 72 Dynamic RAM high density memory module. The


    OCR Scan     		PDF KMM372F3200AK/AS KMM372F3280AK/AS KMM372F3280AK/AS 32Mx72 16Mx4, KMM372F320 KMM372F3200AK KMM372F3200AS

    4MB DRAM

    Abstract: 4MX16 1MX16
    Text: TABLE OF CONTENTS I. GENERAL INFORMATION 1. Introduction . 11 2. Product Guide . 17 3. Ordering information . .


    OCR Scan     		PDF KM41C4000D/KM41V4000D. KM44C1000D/KM44V1000D. KM44C1003D -KM44C1004D/KM44V1004D. KM44C1005D -KM48C512D/KM48V512D. KM48C512D 4MB DRAM 4MX16 1MX16

    KM44V16104AK

    Abstract: samsung dram
    Text: KMM372F3200AK2 DRAM Module ELECTRONICS KMM372F3200AK2/AS2 & KMM372F3280AK2/AS2 Fast Page with EDO 32Mx72 DRAM DIMM with ECC based on 16Mx4, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F320 8 0A is a 32M bit x 72 Dynamic RAM high density memory module. The


    OCR Scan     		PDF KMM372F3200AK2 KMM372F3200AK2/AS2 KMM372F3280AK2/AS2 32Mx72 16Mx4, KMM372F320 16Mx4bit 400mil 48pin KM44V16104AK samsung dram

    Untitled

    Abstract: No abstract text available
    Text: K M 4 4 V 16104AS CMOS D R A M ELECTRONICS 1 6 M x 4 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. ,


    OCR Scan     		PDF 16104AS 16Mx4 KM44V16104AS

    Untitled

    Abstract: No abstract text available
    Text: KMM374F1600AK1 ELECTRONICS DRAM Module KMM374F1680AK & KMM374F1600AK EDO Mode without buffer 16Mx72 DRAM DIMM with ECC based on 16Mx4, 8K & 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES • Part Identification Part number KMM374F1680AK KMM374F1600AK The Samsung KMM374F168 0 0AK is a 16M bit x 72


    OCR Scan     		PDF KMM374F1600AK1 KMM374F1680AK KMM374F1600AK 16Mx72 16Mx4, KMM374F1600AK KMM374F168 16Mx4bit

    KM44C4105C-6

    Abstract: KM44C16004
    Text: General Information CMOS DRAM 1. introduction 4Mbit 4Mx1 KM41C4000D-5 - KM41C4000D-6 - KM41C4000D-7 KM41C4000D-L5 1Mx4 KM41C4000D-L6 KM41C4000D-L7 KM41V4000D-6 KM41V4000D-7 KM41V4000D-L6 KM41V4000D-L7 KM44C1000D-5 - KM44C1000D-6 - KM44C1000D-7 KM44C1000D-L5 - KM44C1000D-L6 - KM44C1000D-L7


    OCR Scan     		PDF KM41C4000D-5 KM41C4000D-6 KM41C4000D-7 KM41C4000D-L5 KM41C4000D-L6 KM41V4000D-6 KM41V4000D-L6 KM41C4000D-L7 KM41V4000D-7 KM41V4000D-L7 KM44C4105C-6 KM44C16004

    1004CL

    Abstract: 44V16 366F 44C40 372V3280 2100B-7 M5368 KMM5368103B 44v16100 dram module kmm 2mx32
    Text: FUNCTION GUIDE 1. INTRODUCTION DRAM Module I. Single In-Line M em ory M odule SIMM l-i. Fast Page ( FP ) Mode 5 V [T6M~Based j- f — ftM x 3 g "KMM5321200BW/BWG-6 H ~KM M 5321200BW/BWG-&#39; -|lM x 3 6 [2MX32 KMM5322100BKU/BKUG-5 K —[2Mx36 H H | KMM5322100BKÜ/BKÛ g ^K 1<M M 5322-| OOBKU/BKUG3-7


    OCR Scan     		PDF KMM5321200BW/BWG-6 5321200BW/BWG-' KMM5361203BW/8 KMM5322200BW/BWG-6 KMM5322100BKU/BKUG-5 MM5361203BW/BWG-7 KMM5322200BW/BWG-7 2MX32 KMM5322100BK 2Mx36 1004CL 44V16 366F 44C40 372V3280 2100B-7 M5368 KMM5368103B 44v16100 dram module kmm 2mx32