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    KM48C2100B Search Results

    KM48C2100B Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM48C2100B Samsung Electronics 2M x 8-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM48C2100BK-5 Samsung Electronics 2M x 8-Bit CMOS dynamic RAM with fast page mode, 5V, 50ns Original PDF
    KM48C2100BK-6 Samsung Electronics 2M x 8-Bit CMOS dynamic RAM with fast page mode, 5V, 60ns Original PDF
    KM48C2100BK-7 Samsung Electronics 2M x 8-Bit CMOS dynamic RAM with fast page mode, 5V, 70ns Original PDF
    KM48C2100BKL-5 Samsung Electronics 2M x 8-Bit CMOS dynamic RAM with fast page mode, 5V, 50ns Original PDF
    KM48C2100BKL-6 Samsung Electronics 2M x 8-Bit CMOS dynamic RAM with fast page mode, 5V, 60ns Original PDF
    KM48C2100BKL-7 Samsung Electronics 2M x 8-Bit CMOS dynamic RAM with fast page mode, 5V, 70ns Original PDF
    KM48C2100BS-5 Samsung Electronics 2M x 8-Bit CMOS dynamic RAM with fast page mode, 5V, 50ns Original PDF
    KM48C2100BS-6 Samsung Electronics 2M x 8-Bit CMOS dynamic RAM with fast page mode, 5V, 60ns Original PDF
    KM48C2100BS-7 Samsung Electronics 2M x 8-Bit CMOS dynamic RAM with fast page mode, 5V, 70ns Original PDF
    KM48C2100BSL-5 Samsung Electronics 2M x 8-Bit CMOS dynamic RAM with fast page mode, 5V, 50ns Original PDF
    KM48C2100BSL-6 Samsung Electronics 2M x 8-Bit CMOS dynamic RAM with fast page mode, 5V, 60ns Original PDF
    KM48C2100BSL-7 Samsung Electronics 2M x 8-Bit CMOS dynamic RAM with fast page mode, 5V, 70ns Original PDF

    KM48C2100B Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    KM48C2000B

    Abstract: KM48C2100B KM48V2000B KM48V2100B V2000B V2100B
    Text: KM48C2000B, KM48C2100B KM48V2000B, KM48V2100B CMOS DRAM 2M x 8Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle (2K Ref. or 4K Ref.), access time (-5,-6 or -7), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CASbefore-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version.


    Original
    KM48C2000B, KM48C2100B KM48V2000B, KM48V2100B KM48C2000B KM48C2100B KM48V2000B KM48V2100B V2000B V2100B PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM372C213BK/BS KMM372C213BK/BS with Fast Page Mode 2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh , 5V GENERAL DESCRIPTION FEATURES The Samsung KMM372C213B is a 2Mx72bits Dynamic RAM high density memory module. The Samsung KMM372C213B consists of nine CMOS 2Mx8bits DRAMs in SOJ/TSOP-II


    Original
    KMM372C213BK/BS KMM372C213BK/BS KMM372C213B 2Mx72bits KMM372C213B 300mil 16bits 48pin 168-pin PDF

    KM48C2100

    Abstract: No abstract text available
    Text: DRAM MODULE KMM364C213BK/BS KMM364C213BK/BS with Fast Page Mode 2M x 64 DRAM DIMM using 2Mx8, 2K Refresh , 5V GENERAL DESCRIPTION FEATURES The Samsung KMM364C213B is a 2Mx64bits Dynamic RAM high density memory module. The Samsung KMM364C213B consists of eight CMOS 2Mx8bits DRAMs in SOJ/TSOP-II


    Original
    KMM364C213BK/BS KMM364C213BK/BS KMM364C213B 2Mx64bits KMM364C213B 300mil 16bits 48pin 168-pin KM48C2100 PDF

    Untitled

    Abstract: No abstract text available
    Text: KM48C2100BK CMOS D R A M ELECTRONICS 2 M x 8 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


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    KM48C2100BK PDF

    km48c2000

    Abstract: No abstract text available
    Text: KM48C2000B, KM48C2100B KM48V2000B, KM48V2100B CMOS DRAM 2M x 8 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION T h is is a fa m ily o f 2 ,0 9 7 ,1 5 2 x 8 bit F a s t P a g e M o d e C M O S D R A M s. F a st P a g e M o d e o ffe rs h ig h s p e e d


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    KM48C2000B, KM48C2100B KM48V2000B, KM48V2100B km48c2000 PDF

    00-BK

    Abstract: No abstract text available
    Text: KM48C2000B, KM48C2100B KM48V2000B, KM48V2100B CMOS DRAM 2M x 8 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


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    KM48C2000B, KM48C2100B KM48V2000B, KM48V2100B 00E33D1 00-BK PDF

    VG264265B

    Abstract: TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference
    Text: Cross Reference Guide 1.3. Cross Reference Guide 1.3.1. Cross Reference of 256kxl6 DRAM Vendors\Configuration VIS Hitachi Hyundai Micron Motorola NEC Samsung Toshiba TI 256kxl6, 5V, EDO VG264265B HM514265D HY514264B MT4C16270 N/A PD4244265LE KM416C254D TC5144265D


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    256kxl6 256kxl6, VG264265B HM514265D HY514264B MT4C16270 uPD4244265LE KM416C254D TC5144265D TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference PDF

    KM48V2100B

    Abstract: No abstract text available
    Text: KM48V2000BK CMOS DRAM ELECTRONICS 2 M x 8 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


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    KM48V2000BK 48V2000BK 03552A KM48V2100B PDF

    Untitled

    Abstract: No abstract text available
    Text: KMM372C213BK/BS DRAM MODULE KMM372C213BK/BS Fast Page Mode 2Mx72 DRAM DIMM with ECC, 2K Refresh, 5V FEATURES GENERAL DESCRIPTION The Samsung KMM372C213B is a 2M bit x 72 • Part Identification - KMM372C213BK 2048 cycles/32ms, SOJ Dynamic RAM high density memory module. The


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    KMM372C213BK/BS KMM372C213BK/BS 2Mx72 KMM372C213B KMM372C213BK cycles/32ms, 300mil 48pin 168-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: K M 4 8 C 2 1 OOBS CMOS DRAM ELECTRONICS 2 M x 8 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


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    512Kx8) KM48C2100BS D3S337 7Tb4142 PDF

    Untitled

    Abstract: No abstract text available
    Text: KM48C2000B K CMOS D R A M ELECTRONICS 2 M x 8 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


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    KM48C2000B 16Mx4, 512Kx8) KM48C2000BK PDF

    KM48V2104B

    Abstract: KM48C2104B
    Text: FUNCTION GUIDE MEMORY ICs Density 16M bit Org. 4Mx4 Power Supply Port Number, 3.3V+0.3V KM44V4104B# features ' * w » 60/70/80 EDO 2K 50/60/70 Fast Page{4K) KM44V4104BL# 16M B/W 2Mx8 5V±10% KM48C2000B# Packages ' : K.-24 Pin S 0j(300m il) S.-24 Pin TSOP-ll(300mil)


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    300mil) 300mil] 300milj KM44V4104B# KM44V4104BL# KM48C2000B# KM48C2000B-L# KM48C2100B# KM48C2100B KM48C2004B# KM48V2104B KM48C2104B PDF

    KM48V2100B

    Abstract: 2100BK
    Text: KM48V2100BK CMOS DRAM ELECTRONICS 2 M x 8 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


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    KM48V2100BK 16Mx4, 512Kx8) 2100BK 71L4142 KM48V2100B 2100BK PDF

    1004CL

    Abstract: 44V16 366F 44C40 372V3280 2100B-7 M5368 KMM5368103B 44v16100 dram module kmm 2mx32
    Text: FUNCTION GUIDE 1. INTRODUCTION DRAM Module I. Single In-Line M em ory M odule SIMM l-i. Fast Page ( FP ) Mode 5 V [T6M~Based j- f — ftM x 3 g "KMM5321200BW/BWG-6 H ~KM M 5321200BW/BWG-&#39; -|lM x 3 6 [2MX32 KMM5322100BKU/BKUG-5 K —[2Mx36 H H | KMM5322100BKÜ/BKÛ g ^K 1<M M 5322-| OOBKU/BKUG3-7


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    KMM5321200BW/BWG-6 5321200BW/BWG-' KMM5361203BW/8 KMM5322200BW/BWG-6 KMM5322100BKU/BKUG-5 MM5361203BW/BWG-7 KMM5322200BW/BWG-7 2MX32 KMM5322100BK 2Mx36 1004CL 44V16 366F 44C40 372V3280 2100B-7 M5368 KMM5368103B 44v16100 dram module kmm 2mx32 PDF

    KM48V2100B

    Abstract: No abstract text available
    Text: KM48V2000BS CMOS DRAM ELECTRONICS 2M x 8 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


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    KM48V2000BS 16Mx4, 512Kx8) 0D35S4Û 48V2000BS KM48V2100B PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM372C213BK/BS KMM372C213BK/BS Fast Page Mode 2Mx72 DRAM DIMM with ECC, 2K Refresh, 5V G ENER AL DESCRIPTIO N FEATURES The Samsung KMM372C213B is a 2M bit x 72 Dynamic RAM high density memory module. The Samsung KMM372C213B consists of nine CMOS


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    KMM372C213BK/BS 2Mx72 KMM372C213B 300mil 48pin 168-pin 110ns 130ns PDF

    Untitled

    Abstract: No abstract text available
    Text: KM48C2000BS CMOS D R A M ELECTRONICS 2M x 8 Bit C M O S Dynamic RAM with Fast Page Mode DESCRIPTION This is a lamily o1 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


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    KM48C2000BS 16Mx4, 512Kx8) GG3S251 PDF

    KM416C60-7

    Abstract: KM48C2104B KM416C60-6 KM48C2004B dram 64kx1 km416c60 KM44V1004CL-7
    Text: General Information CMOS DRAM 1. Introduction j KM41C1000D-6 1M bit KM41C1000D-7 KM41C1000D-8 I KM41C1000D-L6|—¡ KM41C1000D-L7[— j KM41C1000D-L8 1 4M bit M 64Kx1« 4Mx1 KM48C124-55 —j KM48C124-6 KM48C124-7 KM416C60-55 KM416C60-6 KM416C60-7 KM416C64-55


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    KM41C1000D-6 KM41C1000D-7 KM41C1000D-8 KM41C1000D-L6 KM41C1000D-L7 KM41C1000D-L8 KM48C124-55 KM48C124-6 KM416C60-6 KM416C64-6 KM416C60-7 KM48C2104B KM48C2004B dram 64kx1 km416c60 KM44V1004CL-7 PDF

    km44c2560

    Abstract: KM48V2104B-6 KM44C16004A-5
    Text: MEMORY ICs FUNCTION GUIDE DRAM For reference 1M bit 258KX4 KM41C1000D-6 —i KM41C1000D-7 KM41C1000D-L6 —i KM41C1000D-L7 KM44C2560-6 —j KM44C256D-7 KM44C256D-L6 1M B/W r , 128KX8 KM48C128-55 —\ KM48C128-6 KM41C1000D-L6 - KM44C256D-8 i KM44C256D-L8


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    KM41C1000D-6 KM41C1000D-L6 KM41C1000D-7 KM41C1000D-L7 KM44C256D-7 KM44C256D-L7 KM41C1000D-8 258KX4 KM44C2560-6 km44c2560 KM48V2104B-6 KM44C16004A-5 PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM364C213BK/BS KMM364C213BK/BS Fast Page Mode 2Mx64 DRAM DIMM based on 2Mx8, 2K Refresh, 5V FEATURES GENERAL DESCRIPTION The Sam sung KM M 364C213B is a 2M bit x 64 • Part Identification D ynam ic RAM high density m em ory module. The - KMM364C213BK 2048 cycles/32ms Ref, 30 0m il SOJ


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    KMM364C213BK/BS KMM364C213BK/BS 2Mx64 364C213B KMM364C213BK cycles/32ms KMM364C213BS 300mil 48pin PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY KM48C2100 CMOS DRAM 2 M x 8 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The S am sung KM48C2100 is a CMOS high speed 2,097,152 b it x 8 D ynam ic Random A ccess M em ory. Its de sig n is op tim ized fo r high perform ance a p p lica tio n s


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    KM48C2100 KM48C2100 110ns KM48C2100-7 130ns KM48C2100-8 150ns KM48C2100-6 200/is PDF

    Untitled

    Abstract: No abstract text available
    Text: KMM5322100BKU DRAM Module ELECTRONICS KMM53221OOBKU/BKUG Fast Page Mode 2Mx32 DRAM SIMM, 5V, 2K Refresh, using 2Mx8 DRAM FEATURES GENERAL DESCRIPTION • Part Identification The Samsung KMM5322100BKU is a 2M bit x 32 - KMM5322100BKU 2048 cycles/32 ms Ref, SOJ, Solder


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    KMM5322100BKU KMM53221OOBKU/BKUG 2Mx32 KMM5322100BKU cycles/32 KMM5322100BKUG cydes/32 28-pin PDF