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Samsung Semiconductor KM48V2100BS-6
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KM48V2100B Datasheets (13)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
KM48V2100B		Samsung Electronics	2M x 8-Bit CMOS Dynamic RAM with Fast Page Mode		Original	PDF
KM48V2100BK-5		Samsung Electronics	2M x 8-Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns		Original	PDF
KM48V2100BK-6		Samsung Electronics	2M x 8-Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns		Original	PDF
KM48V2100BK-7		Samsung Electronics	2M x 8-Bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns		Original	PDF
KM48V2100BKL-5		Samsung Electronics	2M x 8-Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns		Original	PDF
KM48V2100BKL-6		Samsung Electronics	2M x 8-Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns		Original	PDF
KM48V2100BKL-7		Samsung Electronics	2M x 8-Bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns		Original	PDF
KM48V2100BS-5		Samsung Electronics	2M x 8-Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns		Original	PDF
KM48V2100BS-6		Samsung Electronics	2M x 8-Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns		Original	PDF
KM48V2100BS-7		Samsung Electronics	2M x 8-Bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns		Original	PDF
KM48V2100BSL-5		Samsung Electronics	2M x 8-Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns		Original	PDF
KM48V2100BSL-6		Samsung Electronics	2M x 8-Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns		Original	PDF
KM48V2100BSL-7		Samsung Electronics	2M x 8-Bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns		Original	PDF

KM48V2100B Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
KM48C2000B Abstract: KM48C2100B KM48V2000B KM48V2100B V2000B V2100B Text: KM48C2000B, KM48C2100B KM48V2000B, KM48V2100B CMOS DRAM 2M x 8Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle (2K Ref. or 4K Ref.), access time (-5,-6 or -7), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CASbefore-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version.	Original	KM48C2000B, KM48C2100B KM48V2000B, KM48V2100B KM48C2000B KM48C2100B KM48V2000B KM48V2100B V2000B V2100B	PDF
Untitled Abstract: No abstract text available Text: DRAM MODULE KMM372V213BK/BS KMM372V213BK/BS with Fast Page Mode 2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh , 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372V213B is a 2Mx72bits Dynamic RAM high density memory module. The Samsung KMM372V213B consists of nine CMOS 2Mx8bits DRAMs in SOJ/TSOP-II	Original	KMM372V213BK/BS KMM372V213BK/BS KMM372V213B 2Mx72bits KMM372V213B 300mil 16bits 48pin 168-pin	PDF
km48c2000 Abstract: No abstract text available Text: KM48C2000B, KM48C2100B KM48V2000B, KM48V2100B CMOS DRAM 2M x 8 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION T h is is a fa m ily o f 2 ,0 9 7 ,1 5 2 x 8 bit F a s t P a g e M o d e C M O S D R A M s. F a st P a g e M o d e o ffe rs h ig h s p e e d	OCR Scan	KM48C2000B, KM48C2100B KM48V2000B, KM48V2100B km48c2000	PDF
KM48V2100B Abstract: 2100BK Text: KM48V2100BK CMOS DRAM ELECTRONICS 2 M x 8 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh	OCR Scan	KM48V2100BK 16Mx4, 512Kx8) 2100BK 71L4142 KM48V2100B 2100BK	PDF
00-BK Abstract: No abstract text available Text: KM48C2000B, KM48C2100B KM48V2000B, KM48V2100B CMOS DRAM 2M x 8 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh	OCR Scan	KM48C2000B, KM48C2100B KM48V2000B, KM48V2100B 00E33D1 00-BK	PDF
VG264265B Abstract: TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference Text: Cross Reference Guide 1.3. Cross Reference Guide 1.3.1. Cross Reference of 256kxl6 DRAM Vendors\Configuration VIS Hitachi Hyundai Micron Motorola NEC Samsung Toshiba TI 256kxl6, 5V, EDO VG264265B HM514265D HY514264B MT4C16270 N/A PD4244265LE KM416C254D TC5144265D	OCR Scan	256kxl6 256kxl6, VG264265B HM514265D HY514264B MT4C16270 uPD4244265LE KM416C254D TC5144265D TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference	PDF
KM48V2100B Abstract: No abstract text available Text: KM48V2000BK CMOS DRAM ELECTRONICS 2 M x 8 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh	OCR Scan	KM48V2000BK 48V2000BK 03552A KM48V2100B	PDF
DC-361 Abstract: No abstract text available Text: KMM372V213BK ELECTRONICS DRAM Module KMM372V213BK/BS Fast Page Mode 2Mx72 DRAM DIMM with ECC, 2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES • Part Identification - KMM372V213BK 2048 cycles/Q2ms, SOJ - KMM372V213BS (2048 cycles/32ms, TSOP) • Fast Page Mode Operation	OCR Scan	KMM372V213BK KMM372V213BK/BS 2Mx72 300mil 48pin 168-pin KMM372V213BS cycles/32ms, DC-361	PDF
KMM372V213 Abstract: KMM372V213BS Text: KMM372V213BK/BS DRAM MODULE KMM372V213BK/BS Fast Page Mode 2Mx72 DRAM DIMM with ECC, 2K Refresh, 3.3V FEATURES GENERAL DESCRIPTION • Part Identification - KMM372V213BK 2048 cycles/32ms, SOJ - KMM372V213BS (2048 cycles/32ms, TSOP) The Sam sung KMM 372V213B is a 2M bit x 72	OCR Scan	KMM372V213 KMM372V213BK/BS 2Mx72 KMM372V213B 300mil 48pln 168-pin KMM372V21 110ns KMM372V213BS	PDF
Untitled Abstract: No abstract text available Text: K M 4 8 C 2 1 OOBS CMOS DRAM ELECTRONICS 2 M x 8 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh	OCR Scan	512Kx8) KM48C2100BS D3S337 7Tb4142	PDF
Untitled Abstract: No abstract text available Text: KM48C2000B K CMOS D R A M ELECTRONICS 2 M x 8 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh	OCR Scan	KM48C2000B 16Mx4, 512Kx8) KM48C2000BK	PDF
Untitled Abstract: No abstract text available Text: KM48C2100BK CMOS D R A M ELECTRONICS 2 M x 8 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh	OCR Scan	KM48C2100BK	PDF
Untitled Abstract: No abstract text available Text: KMM332V203BS-L KMM332V213BS-L DRAM MODULE KMM332V203BS-L / KMM332V213BS-L Fast Page Mode 2Mx32 DRAM DIMM, 2Mx8, Low Power with Self Ref, 4K & 2K Refresh, 3.3V DESCRIPTIO N The Samsung KMM332V20 1 3BS is a 2M bit x 32 Dynamic RAM high density memory module. The	OCR Scan	KMM332V203BS-L KMM332V213BS-L KMM332V213BS-L 2Mx32 KMM332V20 28-pin 72-pin	PDF
1004CL Abstract: 44V16 366F 44C40 372V3280 2100B-7 M5368 KMM5368103B 44v16100 dram module kmm 2mx32 Text: FUNCTION GUIDE 1. INTRODUCTION DRAM Module I. Single In-Line M em ory M odule SIMM l-i. Fast Page ( FP ) Mode 5 V [T6M~Based j- f — ftM x 3 g "KMM5321200BW/BWG-6 H ~KM M 5321200BW/BWG-' -\|lM x 3 6 [2MX32 KMM5322100BKU/BKUG-5 K —[2Mx36 H H \| KMM5322100BKÜ/BKÛ g ^K 1<M M 5322-\| OOBKU/BKUG3-7	OCR Scan	KMM5321200BW/BWG-6 5321200BW/BWG-' KMM5361203BW/8 KMM5322200BW/BWG-6 KMM5322100BKU/BKUG-5 MM5361203BW/BWG-7 KMM5322200BW/BWG-7 2MX32 KMM5322100BK 2Mx36 1004CL 44V16 366F 44C40 372V3280 2100B-7 M5368 KMM5368103B 44v16100 dram module kmm 2mx32	PDF

KM48V2100B Abstract: No abstract text available Text: KM48V2000BS CMOS DRAM ELECTRONICS 2M x 8 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh	OCR Scan	KM48V2000BS 16Mx4, 512Kx8) 0D35S4Û 48V2000BS KM48V2100B	PDF
Untitled Abstract: No abstract text available Text: KM48C2000BS CMOS D R A M ELECTRONICS 2M x 8 Bit C M O S Dynamic RAM with Fast Page Mode DESCRIPTION This is a lamily o1 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh	OCR Scan	KM48C2000BS 16Mx4, 512Kx8) GG3S251	PDF
Untitled Abstract: No abstract text available Text: KMM332V203BS-L KMM332V213BS-L DRAM MODULE KMM332V203BS-L & KMM332V213BS-L with Fast Page Mode 2M x 32 DRAM SODIMM using 2MX8, 4K & 2K Ref., 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM332V20 1 3BS is a 2Mx32bits Dynamic Part Identification	OCR Scan	KMM332V203BS-L KMM332V213BS-L KMM332V203BS-L KMM332V213BS-L KMM332V20 2Mx32bits 28-pin 72-pin	PDF
km44c2560 Abstract: KM48V2104B-6 KM44C16004A-5 Text: MEMORY ICs FUNCTION GUIDE DRAM For reference 1M bit 258KX4 KM41C1000D-6 —i KM41C1000D-7 KM41C1000D-L6 —i KM41C1000D-L7 KM44C2560-6 —j KM44C256D-7 KM44C256D-L6 1M B/W r , 128KX8 • KM48C128-55 —\ KM48C128-6 — KM41C1000D-L6 - KM44C256D-8 i KM44C256D-L8	OCR Scan	KM41C1000D-6 KM41C1000D-L6 KM41C1000D-7 KM41C1000D-L7 KM44C256D-7 KM44C256D-L7 KM41C1000D-8 258KX4 KM44C2560-6 km44c2560 KM48V2104B-6 KM44C16004A-5	PDF