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    KM616FU4110 Search Results

    KM616FU4110 Datasheets (1)

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    KM616FU4110ZI-10 Samsung Electronics 256K x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM Original PDF

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    Abstract: No abstract text available
    Text: KM616FU4110 Family CMOS SRAM Document Title 256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft October 26, 1998 Preliminary 1.0 Finalize - Change VDR 1.0V to 1.5V - Change IDR test condition ; VCC=1.2V to 1.5V


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    KM616FU4110 256Kx16 25/Typ. 45/Typ. 68/Typ. PDF

    Untitled

    Abstract: No abstract text available
    Text: KM616FU4110 Family Preliminary CMOS SRAM Document Title 256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM RĂ©vision History Revision No. History 0.0 Initial Draft Draft Date Remark October 26, 1998 Prelim inary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and


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    KM616FU4110 256Kx16 PDF