Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    KM616V1002A Search Results

    SF Impression Pixel

    KM616V1002A Price and Stock

    Samsung Semiconductor KM616V1002AT-12

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics KM616V1002AT-12 77
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Quest Components KM616V1002AT-12 11,540
    • 1 $3
    • 10 $3
    • 100 $3
    • 1000 $1.125
    • 10000 $1.125
    		Buy Now
    KM616V1002AT-12 306
    • 1 $1.875
    • 10 $1.875
    • 100 $1.875
    • 1000 $0.9375
    • 10000 $0.9375
    		Buy Now
    KM616V1002AT-12 61
    • 1 $3
    • 10 $3
    • 100 $1.125
    • 1000 $1.125
    • 10000 $1.125
    		Buy Now

    Samsung Semiconductor KM616V1002AT-15

    Static RAM, 64Kx16, 44 Pin, Plastic, TSOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components KM616V1002AT-15 286
    • 1 $1.875
    • 10 $1.875
    • 100 $1.125
    • 1000 $1.0125
    • 10000 $1.0125
    		Buy Now

    SEC KM616V1002AT-15

    Static RAM, 64Kx16, 44 Pin, Plastic, TSOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components KM616V1002AT-15 5
    • 1 $3
    • 10 $2.25
    • 100 $2.25
    • 1000 $2.25
    • 10000 $2.25
    		Buy Now

    KM616V1002A Datasheets (20)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM616V1002AIJ-12 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM Original PDF
    KM616V1002AIJ-15 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM Original PDF
    KM616V1002AIJ-20 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM Original PDF
    KM616V1002AIT-12 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM Original PDF
    KM616V1002AIT-15 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM Original PDF
    KM616V1002AIT-20 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM Original PDF
    KM616V1002AJ-12 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM Original PDF
    KM616V1002AJ-12 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM Scan PDF
    KM616V1002AJ-15 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM Original PDF
    KM616V1002AJ-15 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM Scan PDF
    KM616V1002AJ-17 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM Scan PDF
    KM616V1002AJ-20 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM Original PDF
    KM616V1002AJ-20 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM Scan PDF
    KM616V1002AT-12 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM Original PDF
    KM616V1002AT-12 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM Scan PDF
    KM616V1002AT-15 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM Original PDF
    KM616V1002AT-15 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM Scan PDF
    KM616V1002AT-17 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM Scan PDF
    KM616V1002AT-20 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM Original PDF
    KM616V1002AT-20 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM Scan PDF

    KM616V1002A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KM616V1002A

    Abstract: SRAM sheet samsung
    Text: PRELIMINARY CMOS SRAM KM616V1002A, KM616V1002AI Document Title 64Kx16 High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev. No. History Draft Data Remark Rev. 0.0 Initial release with Design Target.


    Original     		PDF KM616V1002A, KM616V1002AI 64Kx16 44-TSOP2-400F KM616V1002A SRAM sheet samsung

    KM616V1002A

    Abstract: No abstract text available
    Text: PRELIMINARY CMOS SRAM KM616V1002A, KM616V1002AI Document Title 64Kx16 High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev. No. History Draft Data Rev. 0.0 Initial release with Design Target.


    Original     		PDF KM616V1002A, KM616V1002AI 64Kx16 44-TSOP2-400F KM616V1002A

    K7A803609B-PC25

    Abstract: K7A403600B-PC16 K7I161882B-EC16 K6R4016V1D-TC08 K7A403600M-QC16 K7I161882B-EC30 K6R4008V1C-JC12 K6R4016V1D-UC10 K6R1008V1C-JC10 K7R643682M-FC20
    Text: SAMSUNG # - Connect pin 14 FT pin to Vss * - Tie down extra four I/Os with resistor K6R1016V1C-FC10 K6R1016V1C-FC12 K6R1016V1C-FC15 K6R1016V1C-FC20 K6R1016V1C-JC10 K6R1016V1C-JC12 K6R1016V1C-JC15 K6R1016V1C-JC20 K6R1016V1C-TC10 K6R1016V1C-TC12 K6R1016V1C-TC15


    Original     		PDF K6R1016V1C-FC10 K6R1016V1C-FC12 K6R1016V1C-FC15 K6R1016V1C-FC20 K6R1016V1C-JC10 K6R1016V1C-JC12 K6R1016V1C-JC15 K6R1016V1C-JC20 K6R1016V1C-TC10 K6R1016V1C-TC12 K7A803609B-PC25 K7A403600B-PC16 K7I161882B-EC16 K6R4016V1D-TC08 K7A403600M-QC16 K7I161882B-EC30 K6R4008V1C-JC12 K6R4016V1D-UC10 K6R1008V1C-JC10 K7R643682M-FC20

    mn4117405

    Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
    Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE


    Original     		PDF CP005-1F IS89C51 Z16C02 Z86E30 ZZ16C03 Z8036 Z8536 Z8038 Z5380 Z53C80 mn4117405 NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51

    Bd3 semiconductor

    Abstract: TMS320C549 DC549 BA13 SFM140L2SDLC 20-PIN BA21 BA22 SL14 BDR-1
    Text: 8 7 6 5 4 3 2 1 REVISIONS NOTES, UNLESS OTHERWISE SPECIFIED: REV 1. VCC IS APPLIED TO PIN 8 OF ALL 8-PIN IC'S, PIN 14 OF ALL 14-PIN IC'S, PIN 16 OF ALL 16-PIN IC'S, PIN 20 OF ALL 20-PIN IC'S, ETC. DESCRIPTION DATE APPROVED * 2. GROUND IS APPLIED TO PIN 4 OF ALL 8-PIN IC'S,


    Original     		PDF 14-PIN 16-PIN 20-PIN Bd3 semiconductor TMS320C549 DC549 BA13 SFM140L2SDLC BA21 BA22 SL14 BDR-1

    philips diode PH 33J

    Abstract: UM61256FK-15 sem 2106 inverter diagram IDT7024L70GB um61256 UM61256ak sram um61256fk15 HIGH VOLTAGE ISOLATION DZ 2101 C5584 IDT74LVC1G07ADY
    Text: QUICKSWITCH PRODUCTS HIGH-SPEED LOW POWER CMOS 10-BIT BUS SWITCHES QS3L384 QS3L2384 FEATURES/BENEFITS DESCRIPTION • • • • • • • • • The QS3L384 and QS3L2384 provide a set of ten high-speed CMOS TTL-compatible bus switches. The low ON resistance of the QS3L384 allows inputs to be connected to outputs without


    Original     		PDF 10-BIT QS3L384) QS3L2384 QS3L384 QS3L2384 philips diode PH 33J UM61256FK-15 sem 2106 inverter diagram IDT7024L70GB um61256 UM61256ak sram um61256fk15 HIGH VOLTAGE ISOLATION DZ 2101 C5584 IDT74LVC1G07ADY

    KM62256BLG-7

    Abstract: K6R4016V1C-FI12 IS62LV1024LL-70T1 K6R4016V1C-TI10 K6R1016C1C-TC12 KM62256BLG7 MT58L32L32PT-7.5 GVT72024A8J-10L K6R4016V1C-FI10 K6R4008V1C-JC12
    Text: ISSI SRAM Cross Reference Important: please read disclaimer on last page Cypress P/N ISSI P/N C7C1334-10AC IS61NW6432-8TQ C7C1334-5AC IS61NW6432-5TQ IS61NW6432-6TQ, C7C1334-7AC IS61NW6432-7TQ C7C1335-5.5AC IS61C632A-5TQ C7C1335-7AC IS61C632A-7TQ C7C1335-8.5AC


    Original     		PDF C7C1334-10AC IS61NW6432-8TQ C7C1334-5AC IS61NW6432-5TQ IS61NW6432-6TQ, C7C1334-7AC IS61NW6432-7TQ C7C1335-5 IS61C632A-5TQ C7C1335-7AC KM62256BLG-7 K6R4016V1C-FI12 IS62LV1024LL-70T1 K6R4016V1C-TI10 K6R1016C1C-TC12 KM62256BLG7 MT58L32L32PT-7.5 GVT72024A8J-10L K6R4016V1C-FI10 K6R4008V1C-JC12

    Untitled

    Abstract: No abstract text available
    Text: Advanced Information KM616V1002A CMOS SRAM 65,536 WORDx16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time : 12,15,17, 20ns (max.) • Low Power Dissipation Standby (TTL) : 20mA (max.) (CMOS) : 2mA (max.) Operating : KM616V1002A-12 : 110mA (max.)


    OCR Scan     		PDF KM616V1002A WORDx16 KM616V1002A-12 110mA KM616V1002A-15: 100mA KM616V1002A-17: KM616V1002A-20 KM616VF I/016

    Untitled

    Abstract: No abstract text available
    Text: Advanced Information KM616V1002A CMOS SRAM 65,536 WORDx16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time : 12,15,17, 20ns (max.) • Low Power Dissipation Standby (TTL) : 20mA (max.) (CMOS) : 2mA (max.) Operating : KM616V1002A-12 : 110mA (max.)


    OCR Scan     		PDF KM616V1002A WORDx16 KM616V1002A-12 110mA KM616V1002A-15: 100mA KM616V1002A-17 KM616V1002A-20 KM616V1002A 576-bit

    256x16* STATIC RAM

    Abstract: 256x16 soj 3.3v 256x16 sram KM616V1002A 44-TSOP
    Text: Advanced information KM616V1002A CM O S SRAM 65,536 WORDx16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time : 1 2 ,1 5 ,1 7 , 20ns (max.) • Low Power Dissipation Standby (TTL) : 20mA (max.) (CMOS) : 2mA (max.)


    OCR Scan     		PDF KM616V1002A WORDx16 KM616V1002A-12 110mA KM616V1002A-15 100mA KM616V1002A-17 KM616V1002A-20 KM616V1002AJ 44-SOJ-400 256x16* STATIC RAM 256x16 soj 3.3v 256x16 sram KM616V1002A 44-TSOP

    KM616V1002A

    Abstract: N-319
    Text: PRELIMINARY KM616V1002A CMOS SRAM 6 4 K x 1 6 B i t High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,17,20 ns(Max.) • Low Power Dissipation Standby (TTL) : 30 mA(Max.) (CMOS): 10 mA(Max.) Operating KM616V1002A-12 : 200 mA(Max.)


    OCR Scan     		PDF KM616V1002A KM616V1002A-12 KM616V1002A-15 KM616V1002A-17: 180mA KM616V1002A-20 I/O9-I/O16 KM616V1002AJ 44-SOJ-400 KM616V1002AT KM616V1002A N-319

    KM616V1002A

    Abstract: tba 231
    Text: KM616V1002A CMOS SRAM 6 4Kx16Bi t High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,17,20 ns(Max.) • Low Power Dissipation Standby (TTL) : 30 mA(Max.) (CMOS): 10 mA(Max.) O perating KM616V1002A-12 : 200 mA(Max.)


    OCR Scan     		PDF KM616V1002A KM616V1002A-12 KM616V1002A-15: KM616V1002A-17 KM616V1002A-20 KM616V1002AJ 44-SOJ-4CIO KM616V1002AT 44-TSOP2-400F KM616V1002A tba 231

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY KM616V1002A CMOS SRAM 6 4 K x 1 6 B i t High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Tim e 1 2 ,1 5 ,1 7 ,2 0 ns(M ax.) • Low Pow er Dissipation The K M 61 6 V 1 00 2 A is a 1,048,576-bit high-speed Static


    OCR Scan     		PDF KM616V1002A 576-bit 00E1573

    Untitled

    Abstract: No abstract text available
    Text: KM616V1002A/AL CMOS SRAM ELECTRONICS 6 4 K x 16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,17,20 ns(Max.) • Low Power Dissipation Standby (TTL) : 20mA(Max.) (CMOS): 5mA(Max.) 0.5mA(Max.) ; L-veronly


    OCR Scan     		PDF KM616V1002A/AL KM616V1002A/AL-12 KM616V1002A/AL-15 KM616V1002A/AL-17 KM616V1002A/AL-20 Pi-400 44-TSOP2-400F 003124b

    DD312

    Abstract: ics 0741 D0312
    Text: KM616V1002A/AL E l C iv CMOS SRAM ELECTRONICS 6 4 K x 16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,17,20 ns( Max. ) • Low Power Dissipation Standby (TTL) : 20m A(M ax.) (CMOS): 5m A(M ax.) 0.5 mA(Max.) ; L-veronly


    OCR Scan     		PDF KM616V1002A/AL KM616V1002A/AL-12 KM616V1002A/AL-15: KM616V1002A/AL-17 KM616V1002A/AL-20 I/016 KM616V1002AJ/ALJ 44-S002 44-TSOP2-400F DD312 ics 0741 D0312

    Untitled

    Abstract: No abstract text available
    Text: KM616V1002A CMOS SRAM 64K x 16 Bit High-Speed C M O S Static R AM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Tim e 1 2,1 5,17 ,2 0 ns(M ax.) • Low Pow er Dissipation Standby (TTL) : 3 0 m A(M ax.) (C M O S ): 10 m A(M ax.) Operating K M 6 1 6 V 1 0 0 2 A -1 2 : 200 m A(M ax.)


    OCR Scan     		PDF KM616V1002A

    Untitled

    Abstract: No abstract text available
    Text: CMOS SRAM KM616V1002A, KM616V1002AI 64K x 16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES G E N ER A L DESCRIPTION Fast Access Time 12,15, 20ns(Max.) Low Power Dissipation Standby (TTL) : 20mA(Max.) (CMOS) : 5mA(Max.) O pe rati^ KM616V1002A - 1 2 : 170mA(Max.)


    OCR Scan     		PDF KM616V1002A, KM616V1002AI KM616V1002A 170mA KM616V1Q02A 165mA 160mA KM616V1002AJ 44-SOJ-400

    Untitled

    Abstract: No abstract text available
    Text: KM616V1002A CMOS SRAM 6 4 Kx16Bi t High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL bESCRIPTION • Fast Access Time 12,15,17,20 ns(Max.) • Low Power Dissipation Standby (TTL) : 30 mA(Max.) (CMOS): 10 mA(Max.) Operating KM616V1002A-12 : 200 mA(Max.)


    OCR Scan     		PDF KM616V1002A Kx16Bi KM616V1002A-12 KM616V1002A-15: KM616V1002A-17 KM616V1002A-20 KM616V1002AJ 44-SOJ-4CIO KM616V1002AT 44-TSOP2-4Ã

    Untitled

    Abstract: No abstract text available
    Text: KM616V1002A, KM616V1002AI CMOS SRAMI Document Title 64Kx16 High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev. No. History Rev. 0.0 Initial release with Design Target.


    OCR Scan     		PDF KM616V1002A, KM616V1002AI 64Kx16 44-TSOP2-400F

    KM736V789T-60

    Abstract: 8AEL 65z7 KM68U512ALE-L KM736V689T-8 KM732V595AT KMB16 36SOJ KM68U4000A KM68V2000L-8L
    Text: MEMORY tCs FUNCTION GUIDE 1. SRAM PRODUCT TREE 1.1.1. Low Power 5.0V Operation SRAM 256Kb» 32KX8 KM62256CI-5/5L KM622S6CL-7/7L KM62256CLE -7/71 KM62256CLI-7/7L KM62256DL-5/5L KM62256DL-7/7L KM62256DLI-7/7L 512Kb» KM68512AL-5/5L 64Kx8 KM88512AL-7/7L KM68S»2ALf-7/7L


    OCR Scan     		PDF 256Kb» 32KX8 KM62256CI-5/5L KM62256CLE KM62256CLI-7/7L KM62256DL-5/5L KM62256DLI-7/7L 512Kb» 64Kx8 KM68512AL-5/5L KM736V789T-60 8AEL 65z7 KM68U512ALE-L KM736V689T-8 KM732V595AT KMB16 36SOJ KM68U4000A KM68V2000L-8L

    23C1001

    Abstract: KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000
    Text: FUNCTION GUIDE MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM 1Mx1 KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 4Mbit— 4Mx1 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 KM 44C256CL-8 - KM44C256CSL-6 KM44C256CL-7 KM 44C256CL-8 — KM41C4000C-7 — KM41C4000C-8 KM41C4000C-5


    OCR Scan     		PDF KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 44C256CL-8 KM44C256CSL-6 23C1001 KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000

    KM736V789-60

    Abstract: 512k*8 sram KM68U4000A
    Text: TABLE OF CONTENTS I. FUNCTION GUIDE 1. Product Tree - 13 2. Product G uid e- 23 3. Ordering Information - 30 II.SRAM DATA SHEET Law Power SRAM 5.0V Operation 1. KM622S6C Family 32Kx8 Commercial, Extended, Industrial Products -


    OCR Scan     		PDF KM622S6C KM62256D KM68S12A KM68512B KM681OOOB 32Kx8 64KX8 128KX8 KM736V789-60 512k*8 sram KM68U4000A

    KMCJ532512

    Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
    Text: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7


    OCR Scan     		PDF KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 KM41C4000C-5 KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KMCJ532512 KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL

    soj 36

    Abstract: SOJ 44 KM68257
    Text: MEMORY ICS 3. FUNCTION GUIDE 5V CMOS Fast SRAM Power Dissipation Den. Part Name 256K IM Speed ns Tech. Active Max(mA) Standby Max(mA) Package 28 DI P/SO J KM64258C 64Kx4 12/15/20 CMOS 150 2 KM68257C 32Kx8 12/15/20 CMOS 165 2 28 DIP/SOJ KM641001 256Kx4 20/25/35


    OCR Scan     		PDF KM64258C KM68257C 64Kx4 32Kx8 256Kx4 128Kx8 soj 36 SOJ 44 KM68257