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    KM616V1002AT Price and Stock

    Samsung Semiconductor KM616V1002AT-12

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    Bristol Electronics KM616V1002AT-12 77
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    Quest Components KM616V1002AT-12 306
    • 1 $1.875
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    • 100 $1.875
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    KM616V1002AT-12 61
    • 1 $3
    • 10 $3
    • 100 $1.125
    • 1000 $1.125
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    Samsung Semiconductor KM616V1002AT-15

    IC,SRAM,64KX16,CMOS,TSOP,44PIN,PLASTIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components KM616V1002AT-15 286
    • 1 $1.875
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    SEC KM616V1002AT-15

    IC,SRAM,64KX16,CMOS,TSOP,44PIN,PLASTIC
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    Quest Components KM616V1002AT-15 5
    • 1 $3
    • 10 $2.25
    • 100 $2.25
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    KM616V1002AT Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM616V1002AT-12 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM Original PDF
    KM616V1002AT-12 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM Scan PDF
    KM616V1002AT-15 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM Original PDF
    KM616V1002AT-15 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM Scan PDF
    KM616V1002AT-17 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM Scan PDF
    KM616V1002AT-20 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM Original PDF
    KM616V1002AT-20 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM Scan PDF

    KM616V1002AT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KM616V1002A

    Abstract: SRAM sheet samsung
    Text: PRELIMINARY CMOS SRAM KM616V1002A, KM616V1002AI Document Title 64Kx16 High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev. No. History Draft Data Remark Rev. 0.0 Initial release with Design Target.


    Original     		PDF KM616V1002A, KM616V1002AI 64Kx16 44-TSOP2-400F KM616V1002A SRAM sheet samsung

    KM616V1002A

    Abstract: No abstract text available
    Text: PRELIMINARY CMOS SRAM KM616V1002A, KM616V1002AI Document Title 64Kx16 High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev. No. History Draft Data Rev. 0.0 Initial release with Design Target.


    Original     		PDF KM616V1002A, KM616V1002AI 64Kx16 44-TSOP2-400F KM616V1002A

    K7A803609B-PC25

    Abstract: K7A403600B-PC16 K7I161882B-EC16 K6R4016V1D-TC08 K7A403600M-QC16 K7I161882B-EC30 K6R4008V1C-JC12 K6R4016V1D-UC10 K6R1008V1C-JC10 K7R643682M-FC20
    Text: SAMSUNG # - Connect pin 14 FT pin to Vss * - Tie down extra four I/Os with resistor K6R1016V1C-FC10 K6R1016V1C-FC12 K6R1016V1C-FC15 K6R1016V1C-FC20 K6R1016V1C-JC10 K6R1016V1C-JC12 K6R1016V1C-JC15 K6R1016V1C-JC20 K6R1016V1C-TC10 K6R1016V1C-TC12 K6R1016V1C-TC15


    Original     		PDF K6R1016V1C-FC10 K6R1016V1C-FC12 K6R1016V1C-FC15 K6R1016V1C-FC20 K6R1016V1C-JC10 K6R1016V1C-JC12 K6R1016V1C-JC15 K6R1016V1C-JC20 K6R1016V1C-TC10 K6R1016V1C-TC12 K7A803609B-PC25 K7A403600B-PC16 K7I161882B-EC16 K6R4016V1D-TC08 K7A403600M-QC16 K7I161882B-EC30 K6R4008V1C-JC12 K6R4016V1D-UC10 K6R1008V1C-JC10 K7R643682M-FC20

    mn4117405

    Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
    Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE


    Original     		PDF CP005-1F IS89C51 Z16C02 Z86E30 ZZ16C03 Z8036 Z8536 Z8038 Z5380 Z53C80 mn4117405 NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51

    philips diode PH 33J

    Abstract: UM61256FK-15 sem 2106 inverter diagram IDT7024L70GB um61256 UM61256ak sram um61256fk15 HIGH VOLTAGE ISOLATION DZ 2101 C5584 IDT74LVC1G07ADY
    Text: QUICKSWITCH PRODUCTS HIGH-SPEED LOW POWER CMOS 10-BIT BUS SWITCHES QS3L384 QS3L2384 FEATURES/BENEFITS DESCRIPTION • • • • • • • • • The QS3L384 and QS3L2384 provide a set of ten high-speed CMOS TTL-compatible bus switches. The low ON resistance of the QS3L384 allows inputs to be connected to outputs without


    Original     		PDF 10-BIT QS3L384) QS3L2384 QS3L384 QS3L2384 philips diode PH 33J UM61256FK-15 sem 2106 inverter diagram IDT7024L70GB um61256 UM61256ak sram um61256fk15 HIGH VOLTAGE ISOLATION DZ 2101 C5584 IDT74LVC1G07ADY

    KM62256BLG-7

    Abstract: K6R4016V1C-FI12 IS62LV1024LL-70T1 K6R4016V1C-TI10 K6R1016C1C-TC12 KM62256BLG7 MT58L32L32PT-7.5 GVT72024A8J-10L K6R4016V1C-FI10 K6R4008V1C-JC12
    Text: ISSI SRAM Cross Reference Important: please read disclaimer on last page Cypress P/N ISSI P/N C7C1334-10AC IS61NW6432-8TQ C7C1334-5AC IS61NW6432-5TQ IS61NW6432-6TQ, C7C1334-7AC IS61NW6432-7TQ C7C1335-5.5AC IS61C632A-5TQ C7C1335-7AC IS61C632A-7TQ C7C1335-8.5AC


    Original     		PDF C7C1334-10AC IS61NW6432-8TQ C7C1334-5AC IS61NW6432-5TQ IS61NW6432-6TQ, C7C1334-7AC IS61NW6432-7TQ C7C1335-5 IS61C632A-5TQ C7C1335-7AC KM62256BLG-7 K6R4016V1C-FI12 IS62LV1024LL-70T1 K6R4016V1C-TI10 K6R1016C1C-TC12 KM62256BLG7 MT58L32L32PT-7.5 GVT72024A8J-10L K6R4016V1C-FI10 K6R4008V1C-JC12

    UM61256FK-15

    Abstract: YD 6409 philips diode PH 33J um61256 um61256ak-15 PZ 5805 PHILIPS UM6164 KM6264BLS-7 UM61256ak sram IDT8M624
    Text: QUICKSWITCH PRODUCTS HIGH-SPEED CMOS QUICKSWITCH QUAD 2:1 MUX/DEMUX QS3257 QS32257 FEATURES/BENEFITS DESCRIPTION • • • • • • • • The QS3257 is a high-speed CMOS LVTTL-compatible Quad 2:1 multiplexer/demultiplexer. The QS3257 is a function and pinout compatible QuickSwitch


    Original     		PDF 74F257, 74FCT257, 74FCT257T QS32257 QS3257 QS32257 UM61256FK-15 YD 6409 philips diode PH 33J um61256 um61256ak-15 PZ 5805 PHILIPS UM6164 KM6264BLS-7 UM61256ak sram IDT8M624

    Untitled

    Abstract: No abstract text available
    Text: Advanced Information KM616V1002A CMOS SRAM 65,536 WORDx16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time : 12,15,17, 20ns (max.) • Low Power Dissipation Standby (TTL) : 20mA (max.) (CMOS) : 2mA (max.) Operating : KM616V1002A-12 : 110mA (max.)


    OCR Scan     		PDF KM616V1002A WORDx16 KM616V1002A-12 110mA KM616V1002A-15: 100mA KM616V1002A-17: KM616V1002A-20 KM616VF I/016

    Untitled

    Abstract: No abstract text available
    Text: Advanced Information KM616V1002A CMOS SRAM 65,536 WORDx16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time : 12,15,17, 20ns (max.) • Low Power Dissipation Standby (TTL) : 20mA (max.) (CMOS) : 2mA (max.) Operating : KM616V1002A-12 : 110mA (max.)


    OCR Scan     		PDF KM616V1002A WORDx16 KM616V1002A-12 110mA KM616V1002A-15: 100mA KM616V1002A-17 KM616V1002A-20 KM616V1002A 576-bit

    256x16* STATIC RAM

    Abstract: 256x16 soj 3.3v 256x16 sram KM616V1002A 44-TSOP
    Text: Advanced information KM616V1002A CM O S SRAM 65,536 WORDx16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time : 1 2 ,1 5 ,1 7 , 20ns (max.) • Low Power Dissipation Standby (TTL) : 20mA (max.) (CMOS) : 2mA (max.)


    OCR Scan     		PDF KM616V1002A WORDx16 KM616V1002A-12 110mA KM616V1002A-15 100mA KM616V1002A-17 KM616V1002A-20 KM616V1002AJ 44-SOJ-400 256x16* STATIC RAM 256x16 soj 3.3v 256x16 sram KM616V1002A 44-TSOP

    KM616V1002A

    Abstract: N-319
    Text: PRELIMINARY KM616V1002A CMOS SRAM 6 4 K x 1 6 B i t High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,17,20 ns(Max.) • Low Power Dissipation Standby (TTL) : 30 mA(Max.) (CMOS): 10 mA(Max.) Operating KM616V1002A-12 : 200 mA(Max.)


    OCR Scan     		PDF KM616V1002A KM616V1002A-12 KM616V1002A-15 KM616V1002A-17: 180mA KM616V1002A-20 I/O9-I/O16 KM616V1002AJ 44-SOJ-400 KM616V1002AT KM616V1002A N-319

    Untitled

    Abstract: No abstract text available
    Text: KM616V1002A/AL CMOS SRAM ELECTRONICS 6 4 K x 16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,17,20 ns(Max.) • Low Power Dissipation Standby (TTL) : 20mA(Max.) (CMOS): 5mA(Max.) 0.5mA(Max.) ; L-veronly


    OCR Scan     		PDF KM616V1002A/AL KM616V1002A/AL-12 KM616V1002A/AL-15 KM616V1002A/AL-17 KM616V1002A/AL-20 Pi-400 44-TSOP2-400F 003124b

    DD312

    Abstract: ics 0741 D0312
    Text: KM616V1002A/AL E l C iv CMOS SRAM ELECTRONICS 6 4 K x 16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,17,20 ns( Max. ) • Low Power Dissipation Standby (TTL) : 20m A(M ax.) (CMOS): 5m A(M ax.) 0.5 mA(Max.) ; L-veronly


    OCR Scan     		PDF KM616V1002A/AL KM616V1002A/AL-12 KM616V1002A/AL-15: KM616V1002A/AL-17 KM616V1002A/AL-20 I/016 KM616V1002AJ/ALJ 44-S002 44-TSOP2-400F DD312 ics 0741 D0312

    Untitled

    Abstract: No abstract text available
    Text: CMOS SRAM KM616V1002A, KM616V1002AI 64K x 16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES G E N ER A L DESCRIPTION Fast Access Time 12,15, 20ns(Max.) Low Power Dissipation Standby (TTL) : 20mA(Max.) (CMOS) : 5mA(Max.) O pe rati^ KM616V1002A - 1 2 : 170mA(Max.)


    OCR Scan     		PDF KM616V1002A, KM616V1002AI KM616V1002A 170mA KM616V1Q02A 165mA 160mA KM616V1002AJ 44-SOJ-400