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    KM616V1002B Price and Stock

    Samsung Semiconductor KM616V1002BJ-8

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    Bristol Electronics KM616V1002BJ-8 1,865
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    Quest Components KM616V1002BJ-8 1,492
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    Samsung Semiconductor KM616V1002BT-8

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    Bristol Electronics KM616V1002BT-8 508
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    Quest Components KM616V1002BT-8 406
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    KM616V1002B Datasheets (24)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM616V1002BJ-10 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating) Original PDF
    KM616V1002BJ-12 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating) Original PDF
    KM616V1002BJ-8 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating) Original PDF
    KM616V1002BJI-10 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating) Original PDF
    KM616V1002BJI-12 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating) Original PDF
    KM616V1002BJI-8 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating) Original PDF
    KM616V1002BLJ-10 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating) Original PDF
    KM616V1002BLJ-12 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating) Original PDF
    KM616V1002BLJ-8 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating) Original PDF
    KM616V1002BLJI-10 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating) Original PDF
    KM616V1002BLJI-12 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating) Original PDF
    KM616V1002BLJI-8 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating) Original PDF
    KM616V1002BLT-10 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating) Original PDF
    KM616V1002BLT-12 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating) Original PDF
    KM616V1002BLT-8 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating) Original PDF
    KM616V1002BLTI-10 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating) Original PDF
    KM616V1002BLTI-12 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating) Original PDF
    KM616V1002BLTI-8 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating) Original PDF
    KM616V1002BT-10 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating) Original PDF
    KM616V1002BT-12 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating) Original PDF

    KM616V1002B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KM616V1002B

    Abstract: No abstract text available
    Text: PRELIMINARY KM616V1002B/BL, KM616V1002BI/BLI Preliminary PRELIMINARY CMOS SRAM Document Title 64Kx16 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History


    Original
    PDF KM616V1002B/BL, KM616V1002BI/BLI 64Kx16 8/10/12ns 44-TSOP2-400F KM616V1002B

    KM616V1002B

    Abstract: No abstract text available
    Text: PRELIMINARY KM616V1002B/BL, KM616V1002BI/BLI Preliminary PRELIMINARY CMOS SRAM Document Title 64Kx16 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History


    Original
    PDF KM616V1002B/BL, KM616V1002BI/BLI 64Kx16 8/10/12ns 44-TSOP2-400F KM616V1002B

    PD7720

    Abstract: uPD7720 TMS320S30 18672 DSP96002 1553B MCM6323ATS10 NM6403 TMS320C10 TMS320C30
    Text: РАДИОЛОКАЦИЯ С.Миронов, В.Дударев, А.Богатов Серьезную научно техническую проблему представ ляет разработка теоретической базы и методов по


    Original
    PDF NM6403) TMS320S30, NM6404, NM1281, PD7720 uPD7720 TMS320S30 18672 DSP96002 1553B MCM6323ATS10 NM6403 TMS320C10 TMS320C30

    K7A803609B-PC25

    Abstract: K7A403600B-PC16 K7I161882B-EC16 K6R4016V1D-TC08 K7A403600M-QC16 K7I161882B-EC30 K6R4008V1C-JC12 K6R4016V1D-UC10 K6R1008V1C-JC10 K7R643682M-FC20
    Text: SAMSUNG # - Connect pin 14 FT pin to Vss * - Tie down extra four I/Os with resistor K6R1016V1C-FC10 K6R1016V1C-FC12 K6R1016V1C-FC15 K6R1016V1C-FC20 K6R1016V1C-JC10 K6R1016V1C-JC12 K6R1016V1C-JC15 K6R1016V1C-JC20 K6R1016V1C-TC10 K6R1016V1C-TC12 K6R1016V1C-TC15


    Original
    PDF K6R1016V1C-FC10 K6R1016V1C-FC12 K6R1016V1C-FC15 K6R1016V1C-FC20 K6R1016V1C-JC10 K6R1016V1C-JC12 K6R1016V1C-JC15 K6R1016V1C-JC20 K6R1016V1C-TC10 K6R1016V1C-TC12 K7A803609B-PC25 K7A403600B-PC16 K7I161882B-EC16 K6R4016V1D-TC08 K7A403600M-QC16 K7I161882B-EC30 K6R4008V1C-JC12 K6R4016V1D-UC10 K6R1008V1C-JC10 K7R643682M-FC20

    mn4117405

    Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
    Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE


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    PDF CP005-1F IS89C51 Z16C02 Z86E30 ZZ16C03 Z8036 Z8536 Z8038 Z5380 Z53C80 mn4117405 NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51

    UM62256EM-70LL

    Abstract: UM611024 UM62256EM KM416S1020BTG10 AS4C256K16FO-60JC um62256e M27c4000 KM416S1020BT-G10 HM62256 sram ks0723
    Text: Cross Reference Your Memory Provider Partnumber Brand µPD4218165 NEC µPD4218165 NEC µPD424260 NEC µPD431000A NEC µPD43256B NEC µPD43256B-B NEC µPD43256BGU-70LL NEC µPD43256BGW-70 NEC µPD441000L-B NEC µPD442000L-B NEC µPD442012L-XB NEC µPD444012L-B


    Original
    PDF PD4218165 PD424260 PD431000A PD43256B PD43256B-B PD43256BGU-70LL PD43256BGW-70 PD441000L-B PD442000L-B UM62256EM-70LL UM611024 UM62256EM KM416S1020BTG10 AS4C256K16FO-60JC um62256e M27c4000 KM416S1020BT-G10 HM62256 sram ks0723

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet PT8R1202 Bluetooth Digital Audio Streaming IC |


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    PDF PT8R1202 PT8R1202 PT0137

    KM62256BLG-7

    Abstract: K6R4016V1C-FI12 IS62LV1024LL-70T1 K6R4016V1C-TI10 K6R1016C1C-TC12 KM62256BLG7 MT58L32L32PT-7.5 GVT72024A8J-10L K6R4016V1C-FI10 K6R4008V1C-JC12
    Text: ISSI SRAM Cross Reference Important: please read disclaimer on last page Cypress P/N ISSI P/N C7C1334-10AC IS61NW6432-8TQ C7C1334-5AC IS61NW6432-5TQ IS61NW6432-6TQ, C7C1334-7AC IS61NW6432-7TQ C7C1335-5.5AC IS61C632A-5TQ C7C1335-7AC IS61C632A-7TQ C7C1335-8.5AC


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    PDF C7C1334-10AC IS61NW6432-8TQ C7C1334-5AC IS61NW6432-5TQ IS61NW6432-6TQ, C7C1334-7AC IS61NW6432-7TQ C7C1335-5 IS61C632A-5TQ C7C1335-7AC KM62256BLG-7 K6R4016V1C-FI12 IS62LV1024LL-70T1 K6R4016V1C-TI10 K6R1016C1C-TC12 KM62256BLG7 MT58L32L32PT-7.5 GVT72024A8J-10L K6R4016V1C-FI10 K6R4008V1C-JC12

    Untitled

    Abstract: No abstract text available
    Text: Preliminary CMOS SRAM KM616V1002B/BL, KM616V1002BI/BLI Document Title 64Kx16 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Draft Data Remark Rev. 0.0


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    PDF KM616V1002B/BL, KM616V1002BI/BLI 64Kx16 June-1997 44-SOJ-400 44-TSOP2-400F

    Untitled

    Abstract: No abstract text available
    Text: KM616V1002B/BL, KM616V1002BI/BLI CMOS SRAM Document Title 64Kx16 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Rev. 0.0 Initial release with Design Target.


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    PDF KM616V1002B/BL, KM616V1002BI/BLI 64Kx16 8/10/12ns 200/190/180mA 200/195/190mA 44-SOJ-400

    Untitled

    Abstract: No abstract text available
    Text: KM616V1002B/BL, KM616V1002BI/BLI CMOS SRAM 64K x 16 Bit High-Speed CMOS Static RAM{3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 8,10,12ns Max.) • Low Power Dissipation Standby (T T l) : 30mA(Max ) (CMOS) : 50mA(Max.) 0.5mA(Max.) - L-Ver. only


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    PDF KM616V1002B/BL, KM616V1002BI/BLI KM616V1002B/BL 200mA 195mA 190mA KM616V1002BJ 44-SOJ-4GO KM616V1002BT

    Untitled

    Abstract: No abstract text available
    Text: P re 'ir'irc í-y KM 616V1002B/BL, KM616V1002BI/BLI CMOS SRAM 64K x 16 Bit High-Speed CMOS Static RAM 3 ,3V Operating FEATURES GENERAL DESCRIPTION Fast Access Time 8,10,12* • (Max.) . Low Power Dissipation Standby (TTL) : 30« • (Max.) The KM616V1002B/BL is a 1,048,576-bit high-speed Static


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    PDF KM616V1002B/BL, KM616V1002BI/BLI KM616V1002B/BL KM616V1002B/BL-12 I/O16 KM616V1002B/BLJ 44-SOJ-400 KM616V1002B/BLT: 44-TSOP2-400F

    Untitled

    Abstract: No abstract text available
    Text: Rr€íir'in<!‘Y CMOS SRAM KM616V1002B/BL, KM616V1002BI/BLI 64K X 16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION The KM616V1002B/BL is a 1,048,576-bit high-speed Static Random Access Memory organized as 65,536 words by 16 bits.


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    PDF KM616V1002B/BL, KM616V1002BI/BLI KM616V1002B/BL 576-bit 400mil March-1997

    Untitled

    Abstract: No abstract text available
    Text: KM616V1002B/BL, KM616V1002BI/BLI CMOS SRAM Document Title 64Kx16 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History RevNo. History Draft Data Remark Rev. 0.0 Initial release with Design Target.


    OCR Scan
    PDF KM616V1002B/BL, KM616V1002BI/BLI 64Kx16 8/10/12ns 200/190/180mA 44-SOJ-400 44-TSOP2-400F

    KM736V789-60

    Abstract: 512k*8 sram KM68U4000A
    Text: TABLE OF CONTENTS I. FUNCTION GUIDE 1. Product Tree - 13 2. Product G uid e- 23 3. Ordering Information - 30 II.SRAM DATA SHEET Law Power SRAM 5.0V Operation 1. KM622S6C Family 32Kx8 Commercial, Extended, Industrial Products -


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    PDF KM622S6C KM62256D KM68S12A KM68512B KM681OOOB 32Kx8 64KX8 128KX8 KM736V789-60 512k*8 sram KM68U4000A