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    mn4117405

    Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
    Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE


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    PDF CP005-1F IS89C51 Z16C02 Z86E30 ZZ16C03 Z8036 Z8536 Z8038 Z5380 Z53C80 mn4117405 NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51

    UM61256AK-15

    Abstract: UM61256ak sram um61256ck-20 HY62256ALP10 XL93LC46AP w24m257 GVT7164D32Q-6 km62256blg-7 w24m257ak-15 UM61256
    Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM FLASH MICROCONTROLLER SERIAL FLASH JULY 1998 Integrated Silicon Solution, Inc. CP005-1E 7/1/98 1 ISSI CROSS REFERENCE GUIDE


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    PDF CP005-1E AS7C1024-12JC AS7C1024-12PC AS7C1024-12TJC AS7C1024-12TPC AS7C1024-15JC AS7C1024-15PC AS7C1024-15TJC AS7C1024-15TPC AS7C1024-20JC UM61256AK-15 UM61256ak sram um61256ck-20 HY62256ALP10 XL93LC46AP w24m257 GVT7164D32Q-6 km62256blg-7 w24m257ak-15 UM61256

    nk401

    Abstract: AM29V800 S3C3410 S3C3410X JEENI ARM7 pin discription and programming ka78r33 set date pSOS pROBE SMDK40100 SVC32
    Text: 40-S3-C3410X-062001 APPLICATION NOTE S3C3410X 16-Bit CMOS Microcontrollers Revision 0 S3C3410X RISC MICROPROCESSOR 1 ABOUT SMDK40100 BOARD ABOUT SMDK40100 BOARD SYSTEM OVERVIEW SMDK40100 Samsung MCU Development Kit for S3C3410X is a platform that is suitable for code development


    Original
    PDF 40-S3-C3410X-062001 S3C3410X 16-Bit S3C3410X SMDK40100 SMDK40100 16/32-bit nk401 AM29V800 S3C3410 JEENI ARM7 pin discription and programming ka78r33 set date pSOS pROBE SVC32

    KM62256BLG-7

    Abstract: K6R4016V1C-FI12 IS62LV1024LL-70T1 K6R4016V1C-TI10 K6R1016C1C-TC12 KM62256BLG7 MT58L32L32PT-7.5 GVT72024A8J-10L K6R4016V1C-FI10 K6R4008V1C-JC12
    Text: ISSI SRAM Cross Reference Important: please read disclaimer on last page Cypress P/N ISSI P/N C7C1334-10AC IS61NW6432-8TQ C7C1334-5AC IS61NW6432-5TQ IS61NW6432-6TQ, C7C1334-7AC IS61NW6432-7TQ C7C1335-5.5AC IS61C632A-5TQ C7C1335-7AC IS61C632A-7TQ C7C1335-8.5AC


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    PDF C7C1334-10AC IS61NW6432-8TQ C7C1334-5AC IS61NW6432-5TQ IS61NW6432-6TQ, C7C1334-7AC IS61NW6432-7TQ C7C1335-5 IS61C632A-5TQ C7C1335-7AC KM62256BLG-7 K6R4016V1C-FI12 IS62LV1024LL-70T1 K6R4016V1C-TI10 K6R1016C1C-TC12 KM62256BLG7 MT58L32L32PT-7.5 GVT72024A8J-10L K6R4016V1C-FI10 K6R4008V1C-JC12

    Lb 598 d

    Abstract: KM616V4002A 71L414E
    Text: KM616V4002A CMOS SRAM 256K x 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION •• Fast Access Time 15, 17,20* • Max. - Low Power Dissipation Standby (TTL) : 50* • (Max.) The KM616V4002A is a 4,194,304-bit high-speed Static Ran­ dom Access Memory organized as 252,144 words by 16 bits.


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    PDF 616V4002A 256Kx KM616V4002A- KM616V4002A-17 KM616V4002A I/O16 KM616V4002AJ 44-SOJ-400 I/O9-I/O18 March-1997 Lb 598 d 71L414E

    KM616V4002A

    Abstract: No abstract text available
    Text: KM616V4002A CMOS SRAM Document Title 256Kx16 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial Temperature Range. Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial release with Design Target. Jun. 14th, 1996


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    PDF KM616V4002A 256Kx16 /20ns 15/17/20ns /220mA 260/255/250mA 12/13/14ns KM616V4002A

    U108

    Abstract: No abstract text available
    Text: Preliminary KM616V4002A CMOS SRAM 256K x 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 1 2,1 5 ,2 0 ns M ax. • Low Pow er Dissipation Standby (TTL) : 5 0 mA (M ax.) (C M O S ): 10 mA (M ax.) Operating K M 61 6 V 4 00 2 A -12 : 240 mA (M ax.)


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    PDF KM616V4002A 616V40r U108

    KM616V4002aj

    Abstract: No abstract text available
    Text: KM616V4002A CMOS SRAM 256K x 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION •• Fast Access Time 15,17,20*‘ Max. - Low Power Dissipation Standby (TTL) : 50»»(Max.) (CMOS) : 10*«(Max.) Operating KM616V4002A - 15 : 200 • • (Max.)


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    PDF KM616V4002A KM616V4002A KM616V4002A-1 I/O16 KM616V4002AJ 44-SOJ-400 304-bit arch-1997 KM616V4002aj

    Untitled

    Abstract: No abstract text available
    Text: Preliminary KM616V4002A CMOS SRAM 256K x 16 Bit High-Speed CMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Tim e 12,15,20 ns Max. • Low Power Dissipation Standby (TTL) : 50 m A (Max.) (C M O S ): 10 mA (Max.) Operating KM616V4002A -12 : 240 mA (Max.)


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    PDF KM616V4002A KM616V4002A KM616V4002AJ 44-SQJ-400 304-bit

    KM616V4002A

    Abstract: 6161002 ER255 KM732V589
    Text: TABLE OF CONTENTS I. FUNCTION GUIDE 1. Product Guide. 11 2. Ordering Inform ation. 15


    OCR Scan
    PDF KM62256C 128Kx KM68512A KM681000B KM681000C2 KM718B90 KM718BV87AT KM732V588 KM732V589/L. KM716V689 KM616V4002A 6161002 ER255 KM732V589

    soj 36

    Abstract: SOJ 44 KM68257
    Text: MEMORY ICS 3. FUNCTION GUIDE 5V CMOS Fast SRAM Power Dissipation Den. Part Name 256K IM Speed ns Tech. Active Max(mA) Standby Max(mA) Package 28 DI P/SO J KM64258C 64Kx4 12/15/20 CMOS 150 2 KM68257C 32Kx8 12/15/20 CMOS 165 2 28 DIP/SOJ KM641001 256Kx4 20/25/35


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    PDF KM64258C KM68257C 64Kx4 32Kx8 256Kx4 128Kx8 soj 36 SOJ 44 KM68257