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    mn4117405

    Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
    Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE


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    PDF CP005-1F IS89C51 Z16C02 Z86E30 ZZ16C03 Z8036 Z8536 Z8038 Z5380 Z53C80 mn4117405 NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51

    UM61256AK-15

    Abstract: UM61256ak sram um61256ck-20 HY62256ALP10 XL93LC46AP w24m257 GVT7164D32Q-6 km62256blg-7 w24m257ak-15 UM61256
    Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM FLASH MICROCONTROLLER SERIAL FLASH JULY 1998 Integrated Silicon Solution, Inc. CP005-1E 7/1/98 1 ISSI CROSS REFERENCE GUIDE


    Original
    PDF CP005-1E AS7C1024-12JC AS7C1024-12PC AS7C1024-12TJC AS7C1024-12TPC AS7C1024-15JC AS7C1024-15PC AS7C1024-15TJC AS7C1024-15TPC AS7C1024-20JC UM61256AK-15 UM61256ak sram um61256ck-20 HY62256ALP10 XL93LC46AP w24m257 GVT7164D32Q-6 km62256blg-7 w24m257ak-15 UM61256

    nk401

    Abstract: AM29V800 S3C3410 S3C3410X JEENI ARM7 pin discription and programming ka78r33 set date pSOS pROBE SMDK40100 SVC32
    Text: 40-S3-C3410X-062001 APPLICATION NOTE S3C3410X 16-Bit CMOS Microcontrollers Revision 0 S3C3410X RISC MICROPROCESSOR 1 ABOUT SMDK40100 BOARD ABOUT SMDK40100 BOARD SYSTEM OVERVIEW SMDK40100 Samsung MCU Development Kit for S3C3410X is a platform that is suitable for code development


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    PDF 40-S3-C3410X-062001 S3C3410X 16-Bit S3C3410X SMDK40100 SMDK40100 16/32-bit nk401 AM29V800 S3C3410 JEENI ARM7 pin discription and programming ka78r33 set date pSOS pROBE SVC32

    KM62256BLG-7

    Abstract: K6R4016V1C-FI12 IS62LV1024LL-70T1 K6R4016V1C-TI10 K6R1016C1C-TC12 KM62256BLG7 MT58L32L32PT-7.5 GVT72024A8J-10L K6R4016V1C-FI10 K6R4008V1C-JC12
    Text: ISSI SRAM Cross Reference Important: please read disclaimer on last page Cypress P/N ISSI P/N C7C1334-10AC IS61NW6432-8TQ C7C1334-5AC IS61NW6432-5TQ IS61NW6432-6TQ, C7C1334-7AC IS61NW6432-7TQ C7C1335-5.5AC IS61C632A-5TQ C7C1335-7AC IS61C632A-7TQ C7C1335-8.5AC


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    PDF C7C1334-10AC IS61NW6432-8TQ C7C1334-5AC IS61NW6432-5TQ IS61NW6432-6TQ, C7C1334-7AC IS61NW6432-7TQ C7C1335-5 IS61C632A-5TQ C7C1335-7AC KM62256BLG-7 K6R4016V1C-FI12 IS62LV1024LL-70T1 K6R4016V1C-TI10 K6R1016C1C-TC12 KM62256BLG7 MT58L32L32PT-7.5 GVT72024A8J-10L K6R4016V1C-FI10 K6R4008V1C-JC12

    Lb 598 d

    Abstract: KM616V4002A 71L414E
    Text: KM616V4002A CMOS SRAM 256K x 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION •• Fast Access Time 15, 17,20* • Max. - Low Power Dissipation Standby (TTL) : 50* • (Max.) The KM616V4002A is a 4,194,304-bit high-speed Static Ran­ dom Access Memory organized as 252,144 words by 16 bits.


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    PDF 616V4002A 256Kx KM616V4002A- KM616V4002A-17 KM616V4002A I/O16 KM616V4002AJ 44-SOJ-400 I/O9-I/O18 March-1997 Lb 598 d 71L414E

    KM616V4002A

    Abstract: No abstract text available
    Text: KM616V4002A CMOS SRAM Document Title 256Kx16 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial Temperature Range. Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial release with Design Target. Jun. 14th, 1996


    OCR Scan
    PDF KM616V4002A 256Kx16 /20ns 15/17/20ns /220mA 260/255/250mA 12/13/14ns KM616V4002A

    KM616V4002aj

    Abstract: No abstract text available
    Text: KM616V4002A CMOS SRAM 256K x 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION •• Fast Access Time 15,17,20*‘ Max. - Low Power Dissipation Standby (TTL) : 50»»(Max.) (CMOS) : 10*«(Max.) Operating KM616V4002A - 15 : 200 • • (Max.)


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    PDF KM616V4002A KM616V4002A KM616V4002A-1 I/O16 KM616V4002AJ 44-SOJ-400 304-bit arch-1997 KM616V4002aj

    Untitled

    Abstract: No abstract text available
    Text: Preliminary KM616V4002A CMOS SRAM 256K x 16 Bit High-Speed CMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Tim e 12,15,20 ns Max. • Low Power Dissipation Standby (TTL) : 50 m A (Max.) (C M O S ): 10 mA (Max.) Operating KM616V4002A -12 : 240 mA (Max.)


    OCR Scan
    PDF KM616V4002A KM616V4002A KM616V4002AJ 44-SQJ-400 304-bit