Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b7E D • 7 ^ 4 1 4 2 Q017b32 32fi I SHGK PRELIMINARY KM616V513 CMOS SRAM 32,768 W O RD x 16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast A cc e s s Tim e: 17, 20, 25n s (M ax.) • Low Pow er D issipation
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Q017b32
KM616V513
GG17b40
400mil)
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Untitled
Abstract: No abstract text available
Text: CMOS SRAM KM616V513 32,768 WORD x 16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast A c c e ss Time : 17, 20, 25ns(max.) • Low Power Dissipation Standby (TTL) 3mA (max.) . (CMOS) : 100juA (max.) Operating KM616V513-17
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KM616V513
100juA
KM616V513-17
KM616V513-20
KM616V513-25
KM616V513
D01fl554
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Untitled
Abstract: No abstract text available
Text: SAMSUNG E L E C T R O N I C S I NC h7E T> m 7^4142 00171332 35Ô M S I I G K PRELIMINARY KM616V513 CMOS SRAM 32,768 W O R D x 16 B it High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time: 17, 20, 25ns (Max.) • Low Power Dissipation
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KM616V513
KM616V513J-17
130mA
KM616V513J-20
120mA
KM616V513J-25:
110mA
l/09-l/0
KM616V513J:
40-Pin
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SOJ 44
Abstract: 1MX1 KM6865
Text: FUNCTION GUIDE MEMORY ICs High speed & Ultra High Speed SRAM Den. Part Name 64K KM6465B/BL KM6466B/BL KM6865B/BL KM64258B KM64258C KM64V258C KM64B258A KM64B261A KM68257B/BL KM68257C/CL KM68V257C/CL KM68B257A KM68B261A KM69B257A KM616513 KM616V513 KM611001
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KM6465B/BL
KM6466B/BL
KM6865B/BL
KM64258B
KM64258C
KM64V258C
KM64B258A
KM64B261A
KM68257B/BL
KM68257C/CL
SOJ 44
1MX1
KM6865
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Untitled
Abstract: No abstract text available
Text: CMOS SRAM KM616V513 32,768 WORD x 16 Bit High-Speed CMOS Static RAM 3.3V Operating GENERAL DESCRIPTION FEATURES • Fast Access Time : 17, 20, 25ns(max.) ■ Low Power Dissipation Standby OTL) 3mA (max.) (CMOS) : 100,« A (max.) Operating KM616V513-17 :130m A (max.)
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KM616V513
KM616V513-17
KM616V513-20
KM616V513-25
110mA
KM616V513J
40-Pin
400mil)
KM616V513
288-bit
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t538
Abstract: No abstract text available
Text: PRELIMINARY KM616V513 CMOS SRAM 32,768 WORDx 16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time: 17, 20, 25ns (Max.) • Low Power Dissipation Standby (TTL) 3mA (Max.) (CMOS) 100 „A (Max.) Operating K M 616V513J-17:130m A (Max.)
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KM616V513
616V513J-17
616V513J-20
616V513J-25
KM616V513J:
40-Pin
616V513is
288-bit
400mil)
t538
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KMCJ532512
Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
Text: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7
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KM41C1000C-6
KM41C1000CL-6
KM41C1000CSL-6
KM44C256C-6
KM44C256CL-6
KM44C256CSL-6
KM41C4000C-5
KM41C4000C-6
KM41C4000C-7
KM41C4000C-8
KMCJ532512
KM23C1000-20
KM28C64B
KMM594
KM718B90-12
zip 40pin
30-pin simm memory "16m x 8"
KM41C4000C-6
KM41C16000ALL
KM48V2104AL
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KM68512
Abstract: 12BKX8 km6865b
Text: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION 1.1 Dynamic RAM CMOS n— — 256K bit 1M bit 105 ELECTRONICS MEMORY ICs — FUNCTION GUIDE 4M bit 106 ELECTRONICS MEMORY ICs FUNCTION GUIDE 107 ELECTRONICS MEMORY ICs FUNCTION GUIDE CM O S 108 ELECTRONICS MEMORY ICs
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010/J/T
KM68512
12BKX8
km6865b
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