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    h1010

    Abstract: No abstract text available
    Text: PRELIMINARY BiCMOS SRAM KM64B66 BiCMOS 1 6 K X 4 Bit Static RAM With OE FEATURES GENERAL DESCRIPTION • Fast A ccess Time: 10, 12, 15, 20 ns (max.) • Low Power Dissipation S ta n d b y . 20m A (max.) O perating . 160m A (max.)


    OCR Scan     		PDF KM64B66 KM64B66P: 24-pin KM64B66J: 64B66 536-bit h1010

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY BiCMOS SRAM KM64B66 BiCMOS 1 6 K X 4 Bit Static RAM With OE FEATURES GENERAL DESCRIPTION • Fast Access Time: 10, 12, >15, 20ns (max.) • Low Power Dissipation Standby. 20mA (max.) (max.)


    OCR Scan     		PDF KM64B66 160mA KM64B66P: 24-pin KM64B66J: KM64B66 536-bit

    toshiba 32k*8 sram

    Abstract: M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 KM41C464 TC51464
    Text: FUNCTION GUIDE MEMORY ICs 3. CROSS REFERENCE GUIDE 3.1 DRAM Density 64 K X 1 256K X 1 X4 1M X X 4M X X 3.2 Mode Org. 1 4 1 4 Samsung Toshiba Hitachi Fujitsu NEC MSM3764 KM4164 Page Okl F. Page KM41C256 TC51256 Nibble KM41C257 TC51257 HM51256 S. Column KM41C258


    OCR Scan     		PDF KM4164 KM41C256 KM41C257 KM41C258 KM41C464 KM41C466 KM41C1000 KM41C1001 KM41C1002 KM44C256 toshiba 32k*8 sram M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 TC51464