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    KM64BV4002_ Search Results

    KM64BV4002_ Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM64BV4002J-12 Samsung Electronics 1M x 4-Bit (with OE) High Speed BiCMOS Static RAM 3.3V Scan PDF
    KM64BV4002J-15 Samsung Electronics 1M x 4-Bit (with OE) High Speed BiCMOS Static RAM 3.3V Scan PDF
    KM64BV4002J-20 Samsung Electronics 1M x 4-Bit (with OE) High Speed BiCMOS Static RAM 3.3V Scan PDF

    KM64BV4002_ Datasheets Context Search

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    SS24V

    Abstract: No abstract text available
    Text: Advanced Information KM64BV4002_ BiCMOS SRAM 1,048,576 WORD x4B it High-Speed BiCMOS Static RAM 3.3VOperating FEATURES GENERAL DESCRIPTION • Fast Access Time : 12,15, 20ns Max. • Low Power Dissipation Standby (TTL) : 60mA(Max.)


    OCR Scan     		PDF KM64BV4002_ KM64BV4002J-12: 155mA KM64BV4002J-15: 150mA KM64BV4002J-20: 145mA KM64BV4002J 32-SOJ KM64BV4002 SS24V