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    KM684000BL Search Results

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    KM684000BL Price and Stock

    Samsung Semiconductor KM684000BLG-7L

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    Bristol Electronics KM684000BLG-7L 13
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    Quest Components KM684000BLG-7L 12
    • 1 $13.506
    • 10 $9.004
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    Samsung Semiconductor KM684000BLP-7

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    Bristol Electronics KM684000BLP-7 9
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    SEC KM684000BLT-7L

    IC,SRAM,512KX8,CMOS,TSOP,32PIN,PLASTIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components KM684000BLT-7L 26
    • 1 $12.6563
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    Samsung Semiconductor KM684000BLT-7L

    IC,SRAM,512KX8,CMOS,TSOP,32PIN,PLASTIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components KM684000BLT-7L 12
    • 1 $11.25
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    KM684000BLT-7L 9
    • 1 $11.25
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    Samsung Semiconductor KM684000BLG-5T

    IC,SRAM,512KX8,CMOS,SOP,32PIN,PLASTIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components KM684000BLG-5T 3
    • 1 $6.93
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    KM684000BL Datasheets (24)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM684000BL Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    KM684000BLG-5 Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    KM684000BLG-5L Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    KM684000BLG-7 Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    KM684000BLG-7L Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    KM684000BLGI-5 Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    KM684000BLGI-5L Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    KM684000BLGI-7 Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    KM684000BLGI-7L Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    KM684000BLI Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    KM684000BLI-L Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    KM684000BL-L Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    KM684000BLP-5 Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    KM684000BLP-5L Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    KM684000BLP-7 Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    KM684000BLP-7L Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    KM684000BLR-5L Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    KM684000BLR-7L Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    KM684000BLRI-5L Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    KM684000BLRI-7L Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF

    KM684000BL Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: KM684000BLR-7L IL08 4 M 524,288 x 8 -BIT SRAM —TOP VIEW— A15 IN 31 2 A16 IN A17 IN 30 3 A14 IN WE IN 29 4 A12 IN A13 IN 28 5 A7 IN A8 IN 27 6 A6 IN A9 IN 26 7 A5 IN A11 IN 25 8 A4 IN OE IN 24 9 A3 IN A10 IN 23 10 A2 IN CS IN 22 11 A1 IN I/O8 IN 21 12 A0 IN


    Original     		KM684000BLR-7L PDF

    Untitled

    Abstract: No abstract text available
    Text: KM684000BLT-7L IL08 4 M 524,288 x 8 -BIT SRAM —TOP VIEW— A16 IN 2 31 A15 IN A14 IN 3 30 A17 IN A12 IN 4 29 WE IN A7 IN 5 28 A13 IN A6 IN 6 27 A8 IN A5 IN 7 26 A9 IN A4 IN 8 25 A11 IN A3 IN 9 24 A2 IN 10 23 A10 IN A1 IN 11 22 A0 IN 12 21 I/O8 IN I/O1 IN 13


    Original     		KM684000BLT-7L PDF

    PEP Modular Computers GmbH

    Abstract: VME ACFAIL PEP Modular Computers tundra universe ii PEP Modular Computers compactPCI PEP VME tundra universe socket am3 pinout PEP Modular Computers GmbH price list PEP Modular Computers software
    Text: VMP2 Power PC-based CPU Board for VME Applications Manual ID: 24855, Rev. Index 02 November 2002 The product described in this manual is in compliance with all applied CE standards. Preface VMP2 Revision History Manual/Product Title: VMP2 Manual ID Number:


    Original     		PDF

    14270x

    Abstract: 8107X m48t35 MK48T08 Zeropower M48Z35Y M48Z58 M48Z58Y AN1012 M48Z02
    Text: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,


    Original     		AN1012 14270x 8107X m48t35 MK48T08 Zeropower M48Z35Y M48Z58 M48Z58Y AN1012 M48Z02 PDF

    DIL600

    Abstract: CP-RIO3-01 PEP Modular Computers GmbH CP600 pep modular cxm km684000blp sec KM684000BLP-7 vme 3U PEP Modular Computers GmbH price list PEP VME
    Text: CP321 Power PC-based CPU Board for CompactPCI Applications Manual ID: 24977, Rev. Index 02 July 2003 The product described in this manual is in compliance with all applied CE standards. Preface CP321 Revision History Manual/Product Title: CP321 Manual ID Number:


    Original     		CP321 800-SALESKONTRON DIL600 CP-RIO3-01 PEP Modular Computers GmbH CP600 pep modular cxm km684000blp sec KM684000BLP-7 vme 3U PEP Modular Computers GmbH price list PEP VME PDF

    BR1632 safety

    Abstract: BR1632 BR1225X mk48t08 M48T59Y equivalent 8107X application note AN1012 m48t35 Zeropower AN1012
    Text: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,


    Original     		AN1012 BR1632 safety BR1632 BR1225X mk48t08 M48T59Y equivalent 8107X application note AN1012 m48t35 Zeropower AN1012 PDF

    br1632 br1225

    Abstract: No abstract text available
    Text: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,


    Original     		AN1012 br1632 br1225 PDF

    KM684000BLP-7

    Abstract: KM684000B KM684000BL KM684000BLI KM684000BLI-L KM684000BL-L CMOS Logic Family Specifications km684000blt
    Text: CMOS SRAM KM684000B Family Document Title 512Kx8 bit Low Power CMOS Static RAM Revision History History Draft Date Remark 0.0 Initial Draft December 7, 1996 Advance 0.1 Revise - Changed Operating current by reticle revision ICC at write : 35mA → 45mA ICC1 at read/write : 15/35mA → 10/45mA


    Original     		KM684000B 512Kx8 15/35mA 10/45mA 100pF 047MAX 002MIN KM684000BLP-7 KM684000BL KM684000BLI KM684000BLI-L KM684000BL-L CMOS Logic Family Specifications km684000blt PDF

    KM684000BLP

    Abstract: KM684000BLP-7 KM684000BLP-5L KM684000BLR-5L KM684000B KM684000BL KM684000BLI KM684000BLI-L KM684000BL-L KM684000BLP-7L
    Text: CMOS SRAM KM684000B Family Document Title 512Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft December 7, 1996 Advance 0.1 Revise - Changed Operating current by reticle revision ICC at write : 35mA → 45mA


    Original     		KM684000B 512Kx8 15/35mA 10/45mA 100pF 70/100ns 55/70ns 047MAX KM684000BLP KM684000BLP-7 KM684000BLP-5L KM684000BLR-5L KM684000BL KM684000BLI KM684000BLI-L KM684000BL-L KM684000BLP-7L PDF

    BR1632 safety

    Abstract: mk48t08 BR1632 CMOS GATE ARRAYs mitsubishi application note AN1012 m48t35 AN1012 M48Z02 M48Z08 M48Z12
    Text: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs INTRODUCTION Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,


    Original     		AN1012 BR1632 safety mk48t08 BR1632 CMOS GATE ARRAYs mitsubishi application note AN1012 m48t35 AN1012 M48Z02 M48Z08 M48Z12 PDF

    KM684000BLP-7

    Abstract: KM684000B KM684000BL KM684000BLI KM684000BLI-L KM684000BL-L KM684000BLP-5 KM684000BLP-5L KM684000BLP-7L KM684000BLG-7L
    Text: Prem iìinary CMOS SRAM KM684000B Family 512Kx8 bit Low Power CMOS Static RAM FEATURES GENERAL DESCRIPTION ~ - The KM684000B family is fabricated by SAMSUNG'S advanced CMOS process technology. The family can support various operating temperature ranges and has various package types


    OCR Scan     		KM684000B 512Kx8 512Kx8 32-DIP, 32-SOP, 32-TSOP 003bS17 KM684000BLP-7 KM684000BL KM684000BLI KM684000BLI-L KM684000BL-L KM684000BLP-5 KM684000BLP-5L KM684000BLP-7L KM684000BLG-7L PDF

    KM736V789T-60

    Abstract: 8AEL 65z7 KM68U512ALE-L KM736V689T-8 KM732V595AT KMB16 36SOJ KM68U4000A KM68V2000L-8L
    Text: MEMORY tCs FUNCTION GUIDE 1. SRAM PRODUCT TREE 1.1.1. Low Power 5.0V Operation SRAM 256Kb» 32KX8 KM62256CI-5/5L KM622S6CL-7/7L KM62256CLE -7/71 KM62256CLI-7/7L KM62256DL-5/5L KM62256DL-7/7L KM62256DLI-7/7L 512Kb» KM68512AL-5/5L 64Kx8 KM88512AL-7/7L KM68S»2ALf-7/7L


    OCR Scan     		256Kb» 32KX8 KM62256CI-5/5L KM62256CLE KM62256CLI-7/7L KM62256DL-5/5L KM62256DLI-7/7L 512Kb» 64Kx8 KM68512AL-5/5L KM736V789T-60 8AEL 65z7 KM68U512ALE-L KM736V689T-8 KM732V595AT KMB16 36SOJ KM68U4000A KM68V2000L-8L PDF

    M684000

    Abstract: 684000BLG
    Text: K M 68 40 00 B Fami l y D o o u m CMOS SRAM e n t T itle 51 2 K x 8 bit Low Power C M O S Static RAM Revisio n N o . H istory D raft D a te Rem ark 0.0 Initial Draft December 7th 1996 Advance 0.1 Revise -C h a n g e d Operating current by reticle revision


    OCR Scan     		15/35m 10/45mA 100pF M684000 684000BLG PDF

    Untitled

    Abstract: No abstract text available
    Text: KM684000B Family CMOS SRAM Document Tills 512Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft D ecem ber 7, 1996 Advance 0.1 Revise - Changed Operating current by reticle revision Icc at write : 35m A -> 45m A


    OCR Scan     		KM684000B 512Kx8 10/45mA 10OpF PDF

    km684000blp-7l

    Abstract: km684000blp
    Text: Prem ilinary KM684000B Family CMOS SRAM 512Kx8 bit Low Power CMOS Static RAM FEATURES GENERAL DESCRIPTION - The KM684000B family is fabricated by SAMSUNG'S advanced CMOS process technology. The family can support various operating temperature ranges and has various package types


    OCR Scan     		KM684000B 512Kx8 512Kx8 32-DIP, 32-SOP, 32-TSOP km684000blp-7l km684000blp PDF

    KM684000BLP-71

    Abstract: KM684000BLG-5L KM6840006LP-5 A13Q KM684000BLG-7L km684000blt KM684000BLP5L
    Text: KM684000B Family CMOS SRAM S12Kx8 bit Low Power CMOS Static RAM FEATURES GENERAL DESCRIPTION • • • • • . The KM684000B family is fabricated by SAMSUNG'S advanced CMOS process technology. The family supports various operating temperature ranges and various package


    OCR Scan     		KM684000B S12Kx8 32-DIP-600 32-SOP-52S, 32-TSOP2-400F/R KM684000BL KM684000BL-L KM684000BLI KM684000BLP-71 KM684000BLG-5L KM6840006LP-5 A13Q KM684000BLG-7L km684000blt KM684000BLP5L PDF

    684000BLP-7L

    Abstract: 684000BLG
    Text: CMOS SRAM KM684000B Family 512Kx8 bit Low Power CMOS Static RAM Revision No. History Draft Date Remark 0 .0 Initial D raft December 7, 1996 Advance 0.1 Revise - Changed O perating current by reticle revision Icc at write : 35m A - » 45m A Ic c i at read/write : 1 5 /3 5 m A ^ 10/45mA


    OCR Scan     		KM684000B 512Kx8 10/45mA 100pF 70/100ns 55/70ns 004MAX1 684000BLP-7L 684000BLG PDF

    LG tft circuit diagram

    Abstract: No abstract text available
    Text: KM684000B Family CMOS SRAM Document Title 512Kx8 bit Low Power CMOS Static RAM Revision No. History Draft Date Remark 0.0 Initial Drall December 7, 1996 Advance 0.1 Revise - Changed Operating current by reticle revision Icc at write : 35mA -» 45mA Icci at read/write : 15/35mA


    OCR Scan     		KM684000B 512Kx8 15/35mA 10/45mA 100pF 525mil) 76fcQ LG tft circuit diagram PDF