KM68FS1000TGI-12
Abstract: KM68FS1000
Text: KM68FV1000, KM68FS1000, KM68FR1000 Family CMOS SRAM Document Title 128K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft March 15, 1996 Advance 0.1 Revise - Erase 100ns from KM68FS1000 Family
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Original
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KM68FV1000,
KM68FS1000,
KM68FR1000
100ns
KM68FS1000
150ns
32-sTSOP1
25/Typ.
32/Typ.
KM68FS1000TGI-12
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PDF
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mn4117405
Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE
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Original
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CP005-1F
IS89C51
Z16C02
Z86E30
ZZ16C03
Z8036
Z8536
Z8038
Z5380
Z53C80
mn4117405
NN5118165
XL93LC46AP
NN514265
MS6264L-10PC
w24M257
NN514265A
w24m257ak-15
HY62256ALP10
mhs p80c51
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PDF
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UM61256AK-15
Abstract: UM61256ak sram um61256ck-20 HY62256ALP10 XL93LC46AP w24m257 GVT7164D32Q-6 km62256blg-7 w24m257ak-15 UM61256
Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM FLASH MICROCONTROLLER SERIAL FLASH JULY 1998 Integrated Silicon Solution, Inc. CP005-1E 7/1/98 1 ISSI CROSS REFERENCE GUIDE
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CP005-1E
AS7C1024-12JC
AS7C1024-12PC
AS7C1024-12TJC
AS7C1024-12TPC
AS7C1024-15JC
AS7C1024-15PC
AS7C1024-15TJC
AS7C1024-15TPC
AS7C1024-20JC
UM61256AK-15
UM61256ak sram
um61256ck-20
HY62256ALP10
XL93LC46AP
w24m257
GVT7164D32Q-6
km62256blg-7
w24m257ak-15
UM61256
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PDF
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14270x
Abstract: 8107X m48t35 MK48T08 Zeropower M48Z35Y M48Z58 M48Z58Y AN1012 M48Z02
Text: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,
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Original
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AN1012
14270x
8107X
m48t35
MK48T08
Zeropower
M48Z35Y
M48Z58
M48Z58Y
AN1012
M48Z02
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PDF
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KM62256BLG-7
Abstract: K6R4016V1C-FI12 IS62LV1024LL-70T1 K6R4016V1C-TI10 K6R1016C1C-TC12 KM62256BLG7 MT58L32L32PT-7.5 GVT72024A8J-10L K6R4016V1C-FI10 K6R4008V1C-JC12
Text: ISSI SRAM Cross Reference Important: please read disclaimer on last page Cypress P/N ISSI P/N C7C1334-10AC IS61NW6432-8TQ C7C1334-5AC IS61NW6432-5TQ IS61NW6432-6TQ, C7C1334-7AC IS61NW6432-7TQ C7C1335-5.5AC IS61C632A-5TQ C7C1335-7AC IS61C632A-7TQ C7C1335-8.5AC
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C7C1334-10AC
IS61NW6432-8TQ
C7C1334-5AC
IS61NW6432-5TQ
IS61NW6432-6TQ,
C7C1334-7AC
IS61NW6432-7TQ
C7C1335-5
IS61C632A-5TQ
C7C1335-7AC
KM62256BLG-7
K6R4016V1C-FI12
IS62LV1024LL-70T1
K6R4016V1C-TI10
K6R1016C1C-TC12
KM62256BLG7
MT58L32L32PT-7.5
GVT72024A8J-10L
K6R4016V1C-FI10
K6R4008V1C-JC12
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BR1632 safety
Abstract: BR1632 BR1225X mk48t08 M48T59Y equivalent 8107X application note AN1012 m48t35 Zeropower AN1012
Text: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,
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Original
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AN1012
BR1632 safety
BR1632
BR1225X
mk48t08
M48T59Y equivalent
8107X
application note AN1012
m48t35
Zeropower
AN1012
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PDF
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br1632 br1225
Abstract: No abstract text available
Text: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,
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Original
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AN1012
br1632 br1225
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PDF
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BR1632 safety
Abstract: mk48t08 BR1632 CMOS GATE ARRAYs mitsubishi application note AN1012 m48t35 AN1012 M48Z02 M48Z08 M48Z12
Text: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs INTRODUCTION Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,
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Original
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AN1012
BR1632 safety
mk48t08
BR1632
CMOS GATE ARRAYs mitsubishi
application note AN1012
m48t35
AN1012
M48Z02
M48Z08
M48Z12
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PDF
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1S08S
Abstract: No abstract text available
Text: KM68FV1000, KM68FS1000, KM68FR1Q00 Family CMOS SRAM 128K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM FEATURES GENERAL DESCRIPTION • Process Technology : 0.4nm Full CMOS • Organization : 128Kx8 bit > Power Supply Voltage KM 68FV1000 Fam ily. 3.0V - 3.6V
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OCR Scan
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KM68FV1000,
KM68FS1000,
KM68FR1Q00
128Kx8
68FV1000
68FS1000
68FR1000
32-SOP-525,
32-TSO
P1-0820F,
1S08S
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PDF
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3150Q
Abstract: KM68FS1000
Text: KM68FV1000, KM68FS1000, KM68FR1000 Family CMOS SRAM Document Title 128K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft March 15th 1996 Advance 0.1 Revise - Erase 100ns from KM 68FS1000 Family
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OCR Scan
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KM68FV1000,
KM68FS1000,
KM68FR1000
100ns
KM68FS1000
150ns
32-sTSOP1
100ns)
3150Q
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PDF
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dg312
Abstract: No abstract text available
Text: KM6 8 FV 1OOO CMOS SRAM ELECTRONICS 128Kx8 bit Super Low Vcc High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4 um Full CMOS The KM68FV1000, KM68FS1000 and KM68FR1000 • Organization : 128K x 8 family are fabricated by SAMSUNG'S advanced Full
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OCR Scan
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128Kx8
KM68FV1000
KM68FS1000
KM68FR1000
32-SOP,
32-TSOP
32-STSOP
KM68FV1000,
dg312
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PDF
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Untitled
Abstract: No abstract text available
Text: KM68FV1000, KM68FS1000, KM68FR1000 Family CMOS SRAM Document Title 128K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History History Draft Date Remark 0.0 Initial draft March 15,1996 Advance 0.1 Revise - Erase 100ns from KM68FS1000 Family
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OCR Scan
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KM68FV1000,
KM68FS1000,
KM68FR1000
100ns
KM68FS1000
68FS1000
32-sTSOP1
100ns)
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PDF
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Untitled
Abstract: No abstract text available
Text: KM68FV1000, KM68FS1000, KM68FR1000 Family CMOS SRAM 128K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft March 15th 1996 Advance 0.1 Revise - Erase 100ns from KM68FS1000 Family
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OCR Scan
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KM68FV1000,
KM68FS1000,
KM68FR1000
100ns
KM68FS1000
150ns
32-sTSOP1
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PDF
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Untitled
Abstract: No abstract text available
Text: KM68FV1000, KM68FS1000, KM68FR1000 Family CMOS SRAM Document Title 128K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft March 15, 1996 Advance 0.1 Revise - Erase 100ns from KM 68FS1000 Family
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OCR Scan
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KM68FV1000,
KM68FS1000,
KM68FR1000
100ns
68FS1000
150ns
32-sTSOP1
100ns)
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PDF
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KM736V789T-60
Abstract: 8AEL 65z7 KM68U512ALE-L KM736V689T-8 KM732V595AT KMB16 36SOJ KM68U4000A KM68V2000L-8L
Text: MEMORY tCs FUNCTION GUIDE 1. SRAM PRODUCT TREE 1.1.1. Low Power 5.0V Operation SRAM 256Kb» 32KX8 KM62256CI-5/5L KM622S6CL-7/7L KM62256CLE -7/71 KM62256CLI-7/7L KM62256DL-5/5L KM62256DL-7/7L KM62256DLI-7/7L 512Kb» KM68512AL-5/5L 64Kx8 KM88512AL-7/7L KM68S»2ALf-7/7L
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OCR Scan
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256Kb»
32KX8
KM62256CI-5/5L
KM62256CLE
KM62256CLI-7/7L
KM62256DL-5/5L
KM62256DLI-7/7L
512Kb»
64Kx8
KM68512AL-5/5L
KM736V789T-60
8AEL
65z7
KM68U512ALE-L
KM736V689T-8
KM732V595AT
KMB16
36SOJ
KM68U4000A
KM68V2000L-8L
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PDF
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KM736V789-60
Abstract: 512k*8 sram KM68U4000A
Text: TABLE OF CONTENTS I. FUNCTION GUIDE 1. Product Tree - 13 2. Product G uid e- 23 3. Ordering Information - 30 II.SRAM DATA SHEET Law Power SRAM 5.0V Operation 1. KM622S6C Family 32Kx8 Commercial, Extended, Industrial Products -
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OCR Scan
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KM622S6C
KM62256D
KM68S12A
KM68512B
KM681OOOB
32Kx8
64KX8
128KX8
KM736V789-60
512k*8 sram
KM68U4000A
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PDF
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