KMA3D6N20SA
Abstract: NO1A
Text: SEMICONDUCTOR KMA3D6N20SA MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 1 No. KNC 1 A 2. Marking 2 Item Marking Description Device Mark KNC KMA3D6N20SA * Lot No. 1A 2007. 11 Week [1:1st Character, A:2nd Character] Note * Lot No. marking method
|
Original
|
KMA3D6N20SA
OT-23
KMA3D6N20SA
NO1A
|
PDF
|
KMA3D6N20SA
Abstract: No abstract text available
Text: SEMICONDUCTOR KMA3D6N20SA TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment and SMPS.
|
Original
|
KMA3D6N20SA
20/hermal
Fig10.
KMA3D6N20SA
|
PDF
|
KMA3D6N20SA
Abstract: No abstract text available
Text: SEMICONDUCTOR KMA3D6N20SA TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment.
|
Original
|
KMA3D6N20SA
Fig10.
KMA3D6N20SA
|
PDF
|
KMA3D6N20SA
Abstract: No abstract text available
Text: SEMICONDUCTOR KMA3D6N20SA TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment.
|
Original
|
KMA3D6N20SA
OT-23
Fig10.
KMA3D6N20SA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KMA3D6N20SA TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment.
|
Original
|
KMA3D6N20SA
OT-23
|
PDF
|
MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
|
Original
|
|
PDF
|
KF6N60
Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05
Text: Factory : #149, Gongdan-1-dong Gumi, Gyeongsangbuk-do, KOREA 上 http://www.kec.co.kr http://www.keccorp.com Head office : #275-5, Yangjae-dong, Seocho-gu Seoul, KOREA 海 ww 众 w. 韩 ck 授 b- 权 sh 代 .c 理 om 2014 Semiconductor Product Guide KEC CORPORATION
|
Original
|
USFB053
USFB13
USFB13A
USFB13L
USFB14
USFZ10V
USFZ11V
USFZ12V
USFZ13V
USFZ15V
KF6N60
2SK3850 equivalent
KF9N25
KF7N50
MDF10N65b transistor
PANASONIC ZENER
Kf10n60
KIA278R12PI equivalent
kid65003ap equivalent
kia578r05
|
PDF
|