KRC421
Abstract: KRA421 KRC416 KRC417 KRC418 KRC419 KRC420 KRC422
Text: SEMICONDUCTOR KRC416~KRC422 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION E FEATURES B M M With Built-in Bias Resistors. 2 J A Simplify Circuit Design. 3 1 G Reduce a Quantity of Parts and Manufacturing Process.
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KRC416
KRC422
KRC416
KRC418
KRC419
KRC421
KRC420
KRC417
KRC421
KRA421
KRC417
KRC418
KRC419
KRC420
KRC422
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KRC416E
Abstract: marking n2
Text: SEMICONDUCTOR KRC416E MARKING SPECIFICATION ESM PACKAGE 1. Marking method Laser Marking 2. Marking N2 No. Item Marking 1 Device Mark N2 KRC416E 2 hFE Grade - - 00.09.01 Revision No : 00 Description 1/1
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KRC416E
KRC416E
marking n2
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KRC416~KRC422 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION E FEATURES B M M ・With Built-in Bias Resistors. ・Simplify Circuit Design. D J A 2 G ・Reduce a Quantity of Parts and Manufacturing Process.
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KRC416
KRC422
KRC417
KRC418
KRC419
KRC420
KRC421
KRC422
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KRC416V
Abstract: N912 KRC417V KRC418V KRC419V KRC420V KRC421V KRC422V
Text: SEMICONDUCTOR KRC416V~KRC422V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION E FEATURES B ᴌWith Built-in Bias Resistors. ᴌSimplify Circuit Design. G 1 3 K H A D 2 ᴌReduce a Quantity of Parts and Manufacturing Process.
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KRC416V
KRC422V
KRC421V
KRC420V
KRC418V
KRC417V
KRC419V
KRC416V
N912
KRC417V
KRC418V
KRC419V
KRC420V
KRC421V
KRC422V
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KRA421V
Abstract: KRC416V KRC417V KRC418V KRC419V KRC420V KRC421V KRC422V kra421
Text: SEMICONDUCTOR KRC416V~KRC422V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION E FEATURES B With Built-in Bias Resistors. Simplify Circuit Design. G 1 3 K H A D 2 Reduce a Quantity of Parts and Manufacturing Process.
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KRC416V
KRC422V
KRC420V
KRC421V
KRC419V
KRC418V
KRC417V
KRC416V
KRA421V
KRC417V
KRC418V
KRC419V
KRC420V
KRC421V
KRC422V
kra421
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422E
Abstract: KRA421E KRC416E KRC417E KRC418E KRC419E KRC420E KRC421E KRC422E NPN bias ESM
Text: SEMICONDUCTOR KRC416E~KRC422E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION E FEATURES B With Built-in Bias Resistors. Simplify Circuit Design. D H G A 2 Reduce a Quantity of Parts and Manufacturing Process.
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KRC416E
KRC422E
KRC416E
KRC418E
KRC420E
KRC421E
422E
KRA421E
KRC417E
KRC418E
KRC419E
KRC420E
KRC421E
KRC422E
NPN bias ESM
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KRC416
Abstract: KRC417 KRC418 KRC419 KRC420 KRC421 KRC422
Text: SEMICONDUCTOR KRC416~KRC422 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION E FEATURES B M M ᴌWith Built-in Bias Resistors. ᴌSimplify Circuit Design. J A TYPE NO. OUT R1 R2 R1 kή
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KRC416
KRC422
KRC416
KRC417
KRC421
KRC420
KRC418
KRC417
KRC418
KRC419
KRC420
KRC421
KRC422
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kra421
Abstract: No abstract text available
Text: SEMICONDUCTOR KRC416E~KRC422E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION E FEATURES B ・With Built-in Bias Resistors. ・Simplify Circuit Design. D H G A 2 ・Reduce a Quantity of Parts and Manufacturing Process.
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KRC416E
KRC422E
KRC416E
KRC417E
KRC418E
KRC419E
KRC420E
KRC421E
kra421
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KRC416~KRC422 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION E FEATURES B M M With Built-in Bias Resistors. Simplify Circuit Design. 3 G 1 DIM A B C MILLIMETERS _ 0.20 2.00 +
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KRC416
KRC422
KRC416
KRC417
KRC418
KRC419
KRC420
KRC421
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KRA421
Abstract: KRC416 KRC417 KRC418 KRC419 KRC420 KRC421 KRC422 KRA42 1025C
Text: SEMICONDUCTOR KRC416~KRC422 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION E FEATURES B M M ・With Built-in Bias Resistors. ・Simplify Circuit Design. J A 2 3 1 G ・Reduce a Quantity of Parts and Manufacturing Process.
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KRC416
KRC422
KRC416
KRC418
KRC419
KRC421
KRC420
KRC417
KRA421
KRC417
KRC418
KRC419
KRC420
KRC421
KRC422
KRA42
1025C
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KRC416
Abstract: 1N21
Text: SEMICONDUCTOR KRC416 MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 N2 1 2 Item Marking Description Device Mark N2 KRC416 hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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KRC416
KRC416
1N21
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KRC416~KRC422 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION FEATURES 2010. 10. 30 Revision No : 2 1/6
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KRC416
KRC422
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KRC416~KRC422 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION E FEATURES B M M ・With Built-in Bias Resistors. ・Simplify Circuit Design. D G J A 2 ・Reduce a Quantity of Parts and Manufacturing Process.
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KRC416
KRC422
KRC417
KRC418
KRC419
KRC421
KRC420
KRC416
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KRC416V~KRC422V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION E FEATURES B ・With Built-in Bias Resistors. ・Simplify Circuit Design. G H A D 2 ・Reduce a Quantity of Parts and Manufacturing Process.
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KRC416V
KRC422V
KRC419V
KRC420V
KRC421V
KRC418V
KRC417V
KRC416V
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khb*9D5N20P
Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC
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2N2904E
BC859
KDS135S
2N2906E
BC860
KAC3301QN
KDS160
2N3904
BCV71
KDB2151E
khb*9D5N20P
khb9d0n90n
6v Zener diode
khb*2D0N60P
transistor
KHB7D0N65F
BC557 transistor
kia*278R33PI
KHB9D0N90N circuit
ktd998 transistor
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STF12A80
Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
Text: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer
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02CZ10
02CZ11
02CZ12
02CZ13
02CZ15
02CZ16
02CZ18
02CZ2
02CZ20
STF12A80
BSTC1026
BSTD1046
BTB04-600SAP
STF6A80
BSTD1040
TO510DH
BSTC1040
TO812NJ
BTB15-700B
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LM8550
Abstract: KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960
Text: Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC 2N2222/A Motorola KTN2222/A 2SA1150 Toshiba KTA1272 2SA1510 Sanyo KRA1 10S 2SB546A NEC KTB 1369 2N2369/A Motorola KTN2369/A 2SA1151 NEC KTA1266 2SA1511 Sanyo KRA1 10M 2SB560 Sanyo
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2N2222/A
KTN2222/A
2SA1150
KTA1272
2SA1510
2SB546A
2N2369/A
KTN2369/A
2SA1151
KTA1266
LM8550
KTD2026
2SC2320 equivalent
NEC 12F DATASHEET
2N3904 MOTOROLA
2sc2240 equivalent
2N3906 MOTOROLA
2sc1983
2N5400 MOTOROLA
2SD1960
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KIA78*pI
Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC
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2N2904E
BC859
KDS135S
2N2906E
BC860
KAC3301QN
KDS160
2N3904
BCV71
KDB2151E
KIA78*pI
transistor
KIA78*p
TRANSISTOR 2N3904
khb*9D5N20P
khb9d0n90n
KID65004AF
TRANSISTOR mosfet
KIA7812API
khb*2D0N60P
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MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors
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KIA7900PI
TC7SH04FU
KIC7SH04FU
SC604*
KAC3301QN
M51943
KIA7042AP/AF
TC7SH08FU
KIC7SH08FU
LT1937
oz960
khb*9D5N20P
MB4213
KIA78*pI
MN1280
F10P048
KIA7812A
MJE13007
mb4213 equivalent
TRANSISTOR SMD N2 3j
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MB4213
Abstract: F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD
Text: Table of Contents Index 5 SMD Transistors Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal Darlington Transistors
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SSIP-12
KIA6283K
KIA7217AP
SSIP-10
KIA6240K
KIA6801K
KIA6901P/F
MB4213
F10P048
mn1280
mb4213 equivalent
smd transistor zaa
diode zener ZD 15
ic mb4213
transistor 2AX SMD
252 B34 SMD ZENER DIODE
bc237 equivalent SMD
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transistor 22E
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA KRC416E-KRC422E EPITAXIAL PLANAR NPN TRANSISTOR SW IT C H IN G APPLICATION. INTERFA CE C IRCUIT A N D DRIVER CIR CUIT AP PLICATION FE A T U R E S • With Built-in Bias Resistors. • Simplify Circuit Design. • Reduce a Quantity of Parts and Manufacturing Process.
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OCR Scan
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KRC416E-KRC422E
KRC20E
KRC421E
RC420E
RA421E
KRC422E
transistor 22E
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KRC416E
Abstract: KRC422E 422E KRC417E KRC418E KRC419E KRC420E KRC421E r2kq
Text: KRC416EKRC422E SEMICONDUCTOR EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION FEATURES • With Built-in Bias Resistors. • Simplify Circuit Design. • Reduce a Quantity of Parts and Manufacturing Process.
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OCR Scan
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KRC416E-KRC422E
KRC416E
KRC417E
KRC418E
KRC419E
KRC420E
KRC421E
KRC422E
KRC418E
422E
r2kq
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kec 168
Abstract: KRC416 KRC417 KRC418 KRC419 KRC420 KRC421 KRC422 r2kq
Text: KOREA ELECTRONICS CO.,LTD. KRC416KRC422 SEMICONDUCTOR EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION FEATURES • With Built-in Bias Resistors. • Simplify Circuit Design. • Reduce a Quantity of Parts and Manufacturing Process.
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OCR Scan
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KRC416-KRC422
KRC416
KRC417
KRC418
KRC419
KRC420
KRC421
KRC422
MAXIMU17
KRC418
kec 168
r2kq
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