Untitled
Abstract: No abstract text available
Text: KSE210 KSE210 Feature • Low Collector-Emitter Saturation Voltage • High Current Gain Bandwidth Product : fT=65MHz@IC= -100mA Min. • Complement to KSE200 TO-126 1 1 . Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted
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KSE210
65MHz
-100mA
KSE200
O-126
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Untitled
Abstract: No abstract text available
Text: KSE200 KSE200 Feature • Low Collector-Emitter Saturation Voltage • High Current Gain Bandwidth Product : fT=65MHz @ IC=100mA Min. • Complement to KSE210 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted
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KSE200
65MHz
100mA
KSE210
O-126
KSE200STSTU
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KSE200
Abstract: KSE210 kse21
Text: KSE210 PNP EPITAXIAL SILICON TRANSISTOR COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION SATURATION VOLTAGE HIGH CURRENT GAIN-BANDWIDTH PRODUCT-MIN fT=65 IC= -100 Complement to KSE200 { TO-126 ~ ABSOLUTE MAXIMUM RATINGS Rating Unit Collector- Base Voltage
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KSE210
KSE200
O-126
500mA
500mA,
200mA
100mA,
10MHz
KSE200
KSE210
kse21
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PDF
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Untitled
Abstract: No abstract text available
Text: KSE200 NPN EPITAXIAL SILICON TRANSISTOR COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE HIGH CURRENT GAIN-BANDWIDTH PRODUCT-MIN fT=65MHz IC=100mA TO-126 • Complement to KSE210 ABSOLUTE MAXIMUM RATINGS Characteristic Collector-Base Voltage
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Original
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KSE200
65MHz
100mA
KSE210
O-126
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PDF
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KSE200
Abstract: KSE210
Text: KSE200 KSE200 Feature • Low Collector-Emitter Saturation Voltage • High Current Gain Bandwidth Product : fT=65MHz @ IC=100mA Min. • Complement to KSE210 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted
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Original
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KSE200
65MHz
100mA
KSE210
O-126
KSE200
KSE210
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PDF
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KSE200
Abstract: KSE210
Text: KSE210 KSE210 Feature • Low Collector-Emitter Saturation Voltage • High Current Gain Bandwidth Product : fT=65MHz@IC= -100mA Min. • Complement to KSE200 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted
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Original
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KSE210
65MHz
-100mA
KSE200
O-126
KSE200
KSE210
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PDF
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KSE200
Abstract: KSE210
Text: KSE200 KSE200 Feature • Low Collector-Emitter Saturation Voltage • High Current Gain Bandwidth Product : fT=65MHz @ IC=100mA Min. • Complement to KSE210 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted
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Original
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KSE200
65MHz
100mA
KSE210
O-126
KSE200
KSE210
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PDF
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Untitled
Abstract: No abstract text available
Text: KSE210 KSE210 Feature • Low Collector-Emitter Saturation Voltage • High Current Gain Bandwidth Product : fT=65MHz@IC= -100mA Min. • Complement to KSE200 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted
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Original
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KSE210
65MHz
-100mA
KSE200
O-126
KSE210STU
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PDF
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KSE200
Abstract: KSE210
Text: KSE210 KSE210 Feature • Low Collector-Emitter Saturation Voltage • High Current Gain Bandwidth Product : fT=65MHz@IC= -100mA Min. • Complement to KSE200 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted
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Original
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KSE210
65MHz
-100mA
KSE200
O-126
KSE200
KSE210
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PDF
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fjaf6812
Abstract: tip41 darlington fjaf6920 BUT12(A)F KSA1010 transistor bd140-15 bu408 equivalent FJL6920 equivalent fjl6820 FJL6920
Text: Discrete Bipolar Power Transistor – General Purpose Part Number IC A VCEO (V) VCBO (V) VEBO (V) PC (W) hFE VCE (sat) Min Max @ IC (A) Typ (V) Max (V) TO-126 NPN Configuration KSC2682 0.1 180 180 5 8 100 320 0.01 0.12 0.5 KSC3502 0.1 200 200 5 5 40 320
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O-126
KSC2682
KSC3502
KSC2258
KSC2258A
KSC3503
KSC3953
KSC2688
BD150
KSC5305D
fjaf6812
tip41 darlington
fjaf6920
BUT12(A)F
KSA1010
transistor bd140-15
bu408 equivalent
FJL6920 equivalent
fjl6820
FJL6920
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PDF
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BJT BD139
Abstract: TIP416 ksh200 equivalent BD243 ksh50 power BJT BD242 tip426 BD53 kse13003
Text: Discrete Power BJT General Purpose Products IC A VCEO (V) VCBO (V) VEBO (V) hFE PC (W) VCE (sat) Min Max @ IC (A) Typ (V) Max (V) TO-126 NPN Configuration KSC2682 0.1 180 180 5 8 100 320 0.01 0.12 0.5 KSC3502 0.1 200 200 5 5 40 320 0.01 - 0.6 KSC2258 0.1
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O-126
KSC2682
KSC3502
KSC2258
KSC2258A
KSC3503
KSC3953
KSC2688
BD157
2JD210
BJT BD139
TIP416
ksh200 equivalent
BD243
ksh50
power BJT
BD242
tip426
BD53
kse13003
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PDF
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D40C1
Abstract: D40C2 D40C3 D40C4 D40C5 D40C7 D40C8 D40K1 D40K2 D40K3
Text: Small Signal Darlington Transistors hFE Part No. and Polarity V CEO NPN @ V CE & IC Operating Temperature: -55 o C to 150oC fT VCE sat & VBE(sat) @ IC & IB @ V CE & IC IC PNP Package Min. Max. VCE IC Max. Max. IC IB Min. Outline (Max. in mm or inches) Typ.
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150oC
D40C1
D40C2
D40C3
D40C4
D40C1
D40C2
D40C3
D40C4
D40C5
D40C7
D40C8
D40K1
D40K2
D40K3
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PDF
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thermistor KSD201
Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
Text: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™
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tip122 tip127 audio board
Abstract: BUK 450-1000 Transistor Selection Guide tip122 tip127 audio amp FJL6920 equivalent car amp TIP41/TIP42 kse13009 TRANSISTOR TIP31 FJL6920
Text: Bipolar Power Transistor Selection Guide Bipolar Power Transistor Selection Guide Analog Discrete Interface & Logic Optoelectronics January 2003 Across the board. Around the world. Bipolar Power Transistor Selection Guide January 2003 Table of Contents
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Power247TM,
tip122 tip127 audio board
BUK 450-1000
Transistor Selection Guide
tip122 tip127 audio amp
FJL6920 equivalent
car amp
TIP41/TIP42
kse13009
TRANSISTOR TIP31
FJL6920
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PDF
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Untitled
Abstract: No abstract text available
Text: KSE200 NPN EPITAXIAL SILICON TRANSISTOR COL LECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE HIGH CURRENT GAIN-BANDWIDTH PRODUCT-MIN fr=65MHz lc=100mA • Complement to KSE210 ABSOLUTE MAXIMUM RATINGS Rating Unit Collector-Base Voltage
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OCR Scan
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KSE200
65MHz
100mA
KSE210
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PDF
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LC 21 B
Abstract: KSE200 KSE210
Text: NPN EPITAXIAL SILICON TRANSISTOR KSE200 COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE HIGH CURRENT GAIN-BANDWIDTH PRODUCT-MIN fT=65MHz lc=100mA • C om plem ent to KSE210 ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector-B ase Voltage
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OCR Scan
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KSE200
65MHz
100mA
KSE210
LC 21 B
KSE200
KSE210
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PDF
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Untitled
Abstract: No abstract text available
Text: KSE210 PNP EPITAXIAL SILICO N TRANSISTOR COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION SATURATION VOLTAGE HIGH CURRENT GAIN-BANDWIDTH PRODUCT-MIN fT=65ffiz @ lc= -IOO1A TO-126 Complement to K SE200 A BSO LU TE MAXIMUM RATINGS Rating
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OCR Scan
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KSE210
65ffiz
SE200
O-126
10MHz
100mA,
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PDF
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Untitled
Abstract: No abstract text available
Text: KSE210 PNP EPITAXIAL SILICON TRANSISTOR COL LECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION SATURATION VOLTAGE HIGH CURRENT GAIN-BANDWIDTH PRODUCT-MIN fr=65MHz lc= -100mA TO -126 Complement to KSE200 ABSOLUTE MAXIMUM RATINGS Rating Unit
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OCR Scan
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KSE210
65MHz
-100mA
KSE200
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PDF
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KSE200
Abstract: KSE210
Text: PNP EPITAXIAL SILICON TRANSISTOR KSE210 COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION SATURATION VOLTAGE HIGH CURRENT GAIN-BANDWIDTH PRODUCT-MIN fT=65MHz lc= -100mA C om plem ent to KSE200 ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector-B ase Voltage
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OCR Scan
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KSE210
65MHz
-100mA
KSE200
VC100
KSE200
KSE210
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PDF
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Untitled
Abstract: No abstract text available
Text: KSE200 NPN EPITAXIAL SILICON TRANSISTOR COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE HIGH CURREN T GAIN-BANDWIDTH PRODUCT-MIN fT=65MBz @lc=100nA TO-126 Complement to KSE210 ABSO LUTE MAXIMUM RATINGS Characteristic Symbol Rating
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OCR Scan
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KSE200
65MBz
100nA
KSE210
O-126
100mA,
10MHz
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PDF
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558 npn
Abstract: No abstract text available
Text: KSE200 NPN EPITAXIAL SILICON TRANSISTOR COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE HIGH CURRENT GAIN-BANDWIDTH PRODUCT-MIN fT=65MHz @ lc=100mA Complement to KSE210 ABSOLUTE MAXIMUM RATINGS Characteristic Collector-Base Voltage
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OCR Scan
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KSE200
65MHz
100mA
KSE210
558 npn
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PDF
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Untitled
Abstract: No abstract text available
Text: KSE210 PNP EPITAXIAL SILICON TRANSISTOR ! COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE HIGH CURRENT GAIN-BANDWIDTH PRODUCT-MIN fT=65MHz @ lc= -1 0 0 m A I TO -126 Complement to KSE200 ABSOLUTE MAXIMUM RATINGS Characteristic
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OCR Scan
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KSE210
65MHz
KSE200
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PDF
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BD53A
Abstract: KSA733 KSC1330 KSC945 BD139 BD433 TO92 KSE 13007 L ss8050 sot-23 KSE13009F KSP10
Text: FUNCTION GUIDE TRANSISTORS 3. QUICK REFERENCE TABLE APPLICATION 3.1 Audio Equipment “i Package Application FM AM D iff. Amp RM AM P M ix Conv Local Ose IF SOT-23 KSC2223 KSC2223 KSC2223 KSC2715 RF KSC1623 Conv Ose KSC2715 IF KSC2715 10W 20W KSA812/KSC1623
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OCR Scan
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OT-23
KSC2223
KSC2715
KSC1623
KSC2715
KSC1674
BD53A
KSA733
KSC1330
KSC945
BD139
BD433 TO92
KSE 13007 L
ss8050 sot-23
KSE13009F
KSP10
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PDF
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transistor 13003 AD
Abstract: ksd-180 HF 13003 KSD180 13003 HF KSD168 KSD966 ksd-168 PNP NPN Transistor VCEO 120V 100V Ic 7A KSC 1.5k 250v
Text: TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors Device and Polarity Marking Condition V ceo lc Vce h FE Condition (c le Vce(sat},VBE(sat)(v) Condition fiÌMHz) (V) (A) (V) !c (mA) (mA)
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OCR Scan
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OT-23
KST06
KST05
KSC1623
BCW71
BCX70G
BCX70H
BCX70J
BCX70K
BCX71G
transistor 13003 AD
ksd-180
HF 13003
KSD180
13003 HF
KSD168
KSD966
ksd-168
PNP NPN Transistor VCEO 120V 100V Ic 7A
KSC 1.5k 250v
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PDF
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