KTA1266 transistor
Abstract: KTA1266. transistor KTA1266 GR KTA1266 transistor kta1266 kta1266 Y
Text: KTA1266 KTA1266 TRANSISTOR PNP TO-92 FEATURES Power dissipation 1. EMITTER PCM: 0.625 W (Tamb=25℃) 2. COLLECTOR Collector current ICM: -0.15 A Collector-base voltage -50 V V(BR)CBO: Operating and storage junction temperature range 3. BASE 1 2 3 TJ, Tstg: -55℃ to +150℃
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KTA1266
-150mA
-100mA,
-10mA
KTA1266 transistor
KTA1266. transistor
KTA1266 GR
KTA1266
transistor kta1266
kta1266 Y
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 KTC3198 TRANSISTOR NPN 1.EMITTER FEATURES z General Purpose Switching Application z Complementary to KTA1266. 2.COLLECTOR 3.BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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KTC3198
KTA1266.
150mA
100mA
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTA1266 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A Excellent hFE Linearity : hFE 2 =80(Typ.) at VCE=-6V, IC=-150mA : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). N Complementary to KTC3198.
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KTA1266
-150mA
KTC3198.
Temperat50
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KTC3198
Abstract: transistor KTC3198 KTC3198 transistor KTA1266 GR 41BL KTA1266 xk30
Text: SEMICONDUCTOR KTC3198 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A ᴌExcellent hFE Linearity : hFE 2 =100(Typ.) at VCE=6V, IC=150mA : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). N ᴌComplementary to KTA1266.
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KTC3198
150mA
KTA1266.
270Hz
KTC3198
transistor KTC3198
KTC3198 transistor
KTA1266 GR
41BL
KTA1266
xk30
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transistor KTC3198
Abstract: KTC3198 KTA1266 ktc3198 transistor KTA1266. transistor ktc3198 gr kta1266 Y
Text: SEMICONDUCTOR KTC3198 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A Excellent hFE Linearity : hFE 2 =100(Typ.) at VCE=6V, IC=150mA : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). N Complementary to KTA1266.
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KTC3198
150mA
KTA1266.
100mA,
30MHz
transistor KTC3198
KTC3198
KTA1266
ktc3198 transistor
KTA1266. transistor
ktc3198 gr
kta1266 Y
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KTA1266
Abstract: KTA1266 GR transistor KTC3198 KTC3198 Transistor KTA1266
Text: SEMICONDUCTOR KTA1266 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A ᴌExcellent hFE Linearity : hFE 2 =80(Typ.) at VCE=-6V, IC=-150mA : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). N ᴌComplementary to KTC3198.
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KTA1266
-150mA
KTC3198.
KTA1266
KTA1266 GR
transistor KTC3198
KTC3198
Transistor KTA1266
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A1266
Abstract: transistor a1266 A1266 Y A-1266 A1266GR A1266 GR a1266 transistor KTA1266 GR KTA1266 to-92 a1266
Text: SEMICONDUCTOR KTA1266 MARKING SPECIFICATION TO-92 PACKAGE 1. Marking method Laser Marking 2. Marking K 1 No. 2005. 4. 18 816 2 A1266 3 GR 4 Item Marking Description KEC K KEC CORPORATION Lot No. 816 8 Year 0~9 : 2000~2009 16 Week 16 : 16th Week Device Name
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KTA1266
A1266
A1266
transistor a1266
A1266 Y
A-1266
A1266GR
A1266 GR
a1266 transistor
KTA1266 GR
KTA1266
to-92 a1266
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KTA1266 transistor
Abstract: KTA1266
Text: WEITRON KTA1266 PNP Plastic-Encapsulate Transistor P b Lead Pb -Free 1. EMITTER 2. COLLECTOR 3. BASE FEATURES : • Excellent hFE Linearity •� Low noise TO-92 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage
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KTA1266
04-Oct-2010
270TYP
KTA1266 transistor
KTA1266
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors KTA1266 TRANSISTOR PNP TO-92 FEATURES z Excellent hFE Linearity z Low Noise z Complementary to KTC3198 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted)
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KTA1266
KTC3198
-150mA
-100mA,
-10mA
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KTA1266
Abstract: KTA1266 GR KTC3198 KTA1266 transistor transistor kta1266
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors KTA1266 TRANSISTOR PNP TO-92 FEATURES z Excellent hFE Linearity z Low noise z Complementary to KTC3198 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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KTA1266
KTC3198
-150mA
-100mA,
-10mA
KTA1266
KTA1266 GR
KTC3198
KTA1266 transistor
transistor kta1266
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTA1266 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Excellent hFE Linearity : hFE 2 =80(Typ.) at VCE=-6V, IC=-150mA : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). ・Low Noise : NF=1dB(Typ.). at f=1kHz.
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KTA1266
-150mA
KTC3198.
-100mA,
-10mA
30MHz
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KTA1266
Abstract: transistor KTC3198 KTC3198
Text: SEMICONDUCTOR KTA1266 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A Excellent hFE Linearity : hFE 2 =80(Typ.) at VCE=-6V, IC=-150mA N : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). K Complementary to KTC3198.
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KTA1266
-150mA
KTC3198.
Temperat30
KTA1266
transistor KTC3198
KTC3198
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KTC3198
Abstract: KTA1266 KTA1266 GR TO92 LOW VCE PNP KTA1266 Y
Text: KTA1266 PNP TO-92 Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Excellent hFE Linearity Low noise Complementary to KTC3198 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage
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KTA1266
KTC3198
-100A,
-150mA
-100mA,
-10mA
KTA1266 GR
TO92 LOW VCE PNP
KTA1266 Y
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors KTA1266 TRANSISTOR( PNP ) TO—92 FEATURE Power dissipation PCM : 0.625 W(Tamb=25℃) Collector current ICM : -0.15 A Collector-base voltage V BR CBO : -50 V Operating and storage junction temperature range
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KTA1266
30MHz
270TYP
050TYP
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transistor cross reference
Abstract: transistor c1008 npn transistor c1008 NPN C1008 s8550 npn SS8550 cross reference S9014 cross reference c1008 transistor s9014 equivalent S8050 equivalent
Text: Micro Commercial Components Small Signal Transistor Cross Reference Group by Package FORMALLY MICROSEMI CHATSWORTH SOT-23 PACKAGE MCC PART NUMBER HFE Pc mW Ic (mA) BVcbo (V) BVceo (V) Icb (µ A) vcb(V) Vce(sat) (V) fT (MHz) INDUSTRY STANDARD PART NUMBER
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OT-23
S9011
S9012
S9013
S9014
S9015
S9016
S9018
S8050
S8550
transistor cross reference
transistor c1008
npn transistor c1008
NPN C1008
s8550 npn
SS8550 cross reference
S9014 cross reference
c1008 transistor
s9014 equivalent
S8050 equivalent
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transistor KTC3198
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC3198 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Excellent hFE Linearity : hFE 2 =100(Typ.) at VCE=6V, IC=150mA : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). ・Low Noise : NF=1dB(Typ.). at f=1kHz.
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KTC3198
150mA
KTA1266.
100mA,
30MHz
transistor KTC3198
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2sc3198
Abstract: 2SC3198 equivalent transistor 2SC3198 KTA1266 GR KTA1266 transistor KTA1266
Text: 2SC3198 EPITAXIAL PLANAR NPN TRANSISTOR C B A GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION N FEATURES Excellent h FE Linearity :h FE 2 =100(Typ.) at V CE =6V, I C =150mA :h FE (I C =0.1mA)/h FE (I C =2mA)=0.95(Typ.) Low Noise:NF=IdB(Typ.) at f=1kHz
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2SC3198
150mA
KTA1266
2sc3198
2SC3198 equivalent
transistor 2SC3198
KTA1266 GR
KTA1266 transistor
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Untitled
Abstract: No abstract text available
Text: KTA1266 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS ltd , TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION FEATURES *ExceUent Hfe Linearity :Hfe 2 =80(Typ) at Vce=-6V, Ic=-150mA. :HFE(Ic=0.1mA)/Hfe(Ic=2mA>0.95(Typ).
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KTA1266
-150mA.
toKTC3198
-100uA
cb-50V
-150mA
-100mA
-10mA
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KTA1266
Abstract: KTA1266 transistor KTA1266 GR KTC3198 KTA1266. transistor
Text: K EC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTA1266 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Excellent Ii f e Linearity : hFE 2 =80(Typ.) at VCE=-6V, Ic=-150mA : hFE(Ic=0.1mA)/hFE(Ic=2mA)=0.95(Typ.).
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KTA1266
-150mA
KTC3198.
KTA1266
KTA1266 transistor
KTA1266 GR
KTC3198
KTA1266. transistor
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA KTA1266 e p it a x ia l p la n a r pnp t r a n s i s t o r GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Excellent hFF Linearity : hFF 2 =80(Typ.) at VCe=-6V, Ic=-150mA • hFE(Ic-0.1mA)/hFE(Ic-2mA)=0.95(Typ.).
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KTA1266
-150mA
KTC3198.
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KTA1266
Abstract: KTA1266. transistor
Text: M C C TO-92 P lastic-E n cap su late T ran sisto rs KTA1266 TRANSISTOR PNP FEATURES Pcm: 0.625W (Tam b=25‘C ) I cm ; -0 .15 A V(BR)CBO: -5 0 V i temperature range Tj,T.g: -55”C to + 1 50t: ELECTRICAL CHARACTERISTICS (Tamb=25°C u n l e s s o th e r w is e
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KTA1266
-100i»
30MHz
KTA1266. transistor
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KTC3198
Abstract: KTA1266 GR KTA1266 KTA1266 transistor
Text: SEMICONDUCTOR TECHNICAL DATA KTC3198 e p it a x ia l p l a n a r n p n t r a n s is t o r GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Excellent hi,-h Linearity : h„-].; 2 =100(Typ.) a t V ciì = 6 V , Ic=150mA. : hi,-i.;(Ic=0.1rriA)/hi,'i,;(Ic=2rriA)=0.95(Typ.)
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KTC3198
150mA.
KTA1266
150mA
100mA,
Vcb-10V,
30MHz
KTC3198
KTA1266 GR
KTA1266
KTA1266 transistor
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KTC3198
Abstract: KTA1266
Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTC3198 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Excellent I if e Linearity : hFE 2 =100(Typ.) a t V Ce =6V, Ic=150mA. • hFE(Ic-0.1mA)/liFE(Ic-2mA)=0.95(Typ.)
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KTC3198
150mA.
KTA1266
270Hz
KTC3198
KTA1266
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KTC3198
Abstract: KTA1266 transistor KTC3198
Text: SEMICONDUCTOR TECHNICAL DATA KTC3198 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Excellent I Linearity : hFE 2 =100(Typ.) at VCE=6V, Ic=150mA. : hFE(Ic=0.1mA)/hFE(Ic=2mA)=0.95(Typ.) • Low Noise : NF=ldB(Typ.) at f=lkHz.
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KTC3198
150mA.
KTA1266
270Hz
KTC3198
KTA1266
transistor KTC3198
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