transistor 1g
Abstract: MARKING 1G TRANSISTOR ktc32 KTA1298
Text: KTA1298 SEMICONDUCTOR TECHNICAL DATA Shandong Yiguang Electronic Joint stock Co., Ltd * PNP EPITAXIAL SILICON TRANSISTOR Complement to KTC3265 ABSOLUTE MAXIMUM RATINGS at Ta=25℃ Characteristic Symbol Rating Package:SOT-23 Unit Collector-Base Voltage Vcbo
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KTA1298
KTC3265
OT-23
-10uA
-500mA
-20mA
-10mA
062in
-100mA
300uS
transistor 1g
MARKING 1G TRANSISTOR
ktc32
KTA1298
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTA1298 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW FREQUENCY POWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATION. FEATURES ・High DC Current Gain : hFE=100~320. ・Low Saturation Voltage : VCE sat =-0.4V(Max.) (IC=-500mA, IB=-20mA).
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-500mA,
-20mA)
KTC3265.
KTA1298
-800mA
-20mA
-10mA
-10mA,
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Untitled
Abstract: No abstract text available
Text: KTA1298 PNP Silicon Transistors COLLECTOR 3 * “G” Lead Pb -Free 1 BASE 2 SOT-23 EMITTER MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -Continuous Symbol VCEO VCBO VEBO IC Value
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KTA1298
OT-23
KTA1298
-20mAdc)
-10Vdc,
-10mAdc,
30MHz)
OT-23
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 1. BASE KTA1298 TRANSISTOR( PNP ) 2. EMITTER 3. COLLECTOR FEATURES 1.0 Power dissipation PCM : 0.2 W(Tamb=25℃) Collector current ICM : -0.8 A
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OT-23
KTA1298
037TPY
950TPY
550REF
022REF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors KTA1298 SOT_23 TRANSISTOR PNP 1. BASE 2. EMITTER FEATURES 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current -0.8 A ICM: Collector-base voltage
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OT-23
KTA1298
-100mA
-800mA
-20mA
-10mA
-10mA,
30MHz
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sot-23 IY
Abstract: KTA1298 IY TRANSISTOR MARKING IY SOT
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 KTA1298 TRANSISTOR PNP 1. BASE 2. EMITTER FEATURES z Low frequency power amplifier application z Power switching application 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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OT-23
OT-23
KTA1298
-100mA
-800mA
-10mA,
-10mA
-500mA,
-20mA
sot-23 IY
KTA1298
IY TRANSISTOR
MARKING IY SOT
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Untitled
Abstract: No abstract text available
Text: Transistors SMD Type PNP Silicon Transistors KTA1298 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 • Features 0.4 3 1 0.55 ● Collector Current: IC=-800mA +0.1 1.3-0.1 +0.1 2.4-0.1 ● Collector Power Dissipation: PC=200mW 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1
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KTA1298
OT-23
-800mA
200mW
-10mA
-100mA
-500mA,
-20mA
-10mA
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KTA1298
Abstract: MARKING IY SOT sot-23 IY marking IY
Text: SEMICONDUCTOR KTA1298 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking IY No. 1 Item Marking Device Mark I KTA1298 hFE Grade Y O,Y * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method
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KTA1298
OT-23
KTA1298
MARKING IY SOT
sot-23 IY
marking IY
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors KTC3265 SOT-23 TRANSISTOR NPN FEATURES 1. BASE 2. EMITTER z z 3. COLLECTOR High DC current gain: hFE=100-320 Complementary to KTA1298 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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OT-23
KTC3265
OT-23
KTA1298
100mA
500mA,
100MHz
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 KTA1298 TRANSISTOR PNP 1. BASE 2. EMITTER FEATURES z Low frequency power amplifier application z Power switching application 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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OT-23
OT-23
KTA1298
-100mA
-800mA
-10mA
-10mA,
-500mA,
-20mA
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KTA1298
Abstract: KTC3265 EY transistor Transistor Marking EY npn transistor Marking EY
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors KTC3265 SOT-23 TRANSISTOR NPN FEATURES 1. BASE 2. EMITTER z z 3. COLLECTOR High DC current gain Complementary to KTA1298 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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OT-23
KTC3265
OT-23
KTA1298
100mA
500mA,
100MHz
KTA1298
KTC3265
EY transistor
Transistor Marking EY
npn transistor Marking EY
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transistor smd IY
Abstract: No abstract text available
Text: Diodes IC Transistors Transistor T SMD Type Product specification KTA1298 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 • Features 0.4 3 1 0.55 ● Collector Current: IC=-800mA +0.1 1.3-0.1 +0.1 2.4-0.1 ● Collector Power Dissipation: PC=200mW 2 +0.1 0.95-0.1
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KTA1298
OT-23
-800mA
200mW
-10mA
-100mA
-500mA,
-20mA
-10mA
transistor smd IY
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KTA1298
Abstract: KTC3265
Text: SEMICONDUCTOR KTA1298 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW FREQUENCY POWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATION. FEATURES E B L L ᴌHigh DC Current Gain : hFE=100ᴕ320. : VCE sat =-0.4V(Max.) (IC=-500mA, IB=-20mA). 3 G A 2 D ᴌLow Saturation Voltage
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KTA1298
-500mA,
-20mA)
KTC3265.
KTA1298
KTC3265
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTA1298 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW FREQUENCY POWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATION. FEATURES 1998. 6. 15 Revision No : 1 1/2
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KTA1298
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ktc32
Abstract: sot-23 EY EY transistor
Text: KTC3265 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features High DC current gain: hFE=100-320 Complementary to KTA1298 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value
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KTC3265
OT-23
OT-23
KTA1298
100mA
500mA,
100MHz
ktc32
sot-23 EY
EY transistor
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Untitled
Abstract: No abstract text available
Text: SOT-23 Plastic-Encapsulate Transistors KTA1298 SOT_23 TRANSISTOR PNP 1. BASE 2. EMITTER FEATURES 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current -0.8 A ICM: Collector-base voltage -35 V V(BR)CBO: Operating and storage junction temperature range
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OT-23
KTA1298
-10mA,
-100mA
-800mA
-20mA
-10mA
30MHz
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KTA1298
Abstract: sot-23 IY
Text: KTA1298 PNP Silicon Transistors COLLECTOR 3 1 BASE 2 SOT-23 EMITTER MAXIMUM RATINGS Ta=25 C Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -Continuous Symbol VCEO VCBO VEBO IC Value -30 -35 -5.0 -800 Unit Vdc
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KTA1298
OT-23
KTA1298
-20mAdc)
-10Vdc,
-10mAdc,
30MHz)
OT-23
sot-23 IY
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors KTC3265 SOT-23 TRANSISTOR NPN FEATURES 1. BASE 2. EMITTER z z 3. COLLECTOR High DC current gain Complementary to KTA1298 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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OT-23
KTC3265
OT-23
KTA1298
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Untitled
Abstract: No abstract text available
Text: SOT-23 Plastic-Encapsulate Transistors KTC3265 SOT—23 ) TRANSISTOR( NPN 1. BASE 2. EMITTER FEATURES 1.0 3. COLLECTOR ∙ High DC current gain: hFE=100-320 2.4 1.3 0.95 0.4 0.95 1.9 2.9 ∙ Complementary to kta1298 Unit : mm MAXIMUM RATINGS* TA=25℃ unless otherwise noted
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OT-23
KTC3265
kta1298
100mA
100MHz
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IY TRANSISTOR
Abstract: sot-23 IY MARKING CODE IY TRANSISTOR MARKING CODE IY KTA1298 KTC3265 MARKING IY SOT SOT-23 marking IY
Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES KTA1298 Pb z High DC current gain:hFE=100-320. z Low saturation voltage:VCE sat =-0.4V(Max) Lead-free (IC=-500mA,IB=-20mA). B z Suitable for driver stage of small motor.
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KTA1298
-500mA
-20mA)
KTC3265.
OT-23
BL/SSSTC095
IY TRANSISTOR
sot-23 IY
MARKING CODE IY
TRANSISTOR MARKING CODE IY
KTA1298
KTC3265
MARKING IY SOT
SOT-23 marking IY
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Untitled
Abstract: No abstract text available
Text: KTA1298 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Low frequency power amplifier application Power switching application MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC* TJ Parameter Collector-Base Voltage
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KTA1298
OT-23
OT-23
-800mA
-500mA,
-20mA
-10mA
-10mA,
-100mA
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MBR1620CT
Abstract: 1.5Ke240 MBR5020 MBR5045PT BC337 AP6KE15C S9012 s9018 MP106 MB-106
Text: MCC PART INDEX Diodes PART NUMBER 1.5KE10(C)(A) 1.5KE100(C)(A) 1.5KE11(C)(A) 1.5KE110(C)(A) 1.5KE12(C)(A) 1.5KE120(C)(A) 1.5KE13(C)(A) 1.5KE130(C)(A) 1.5KE15(C)(A) 1.5KE150(C)(A) 1.5KE16(C)(A) 1.5KE160(C)(A) 1.5KE17(C)(A) 1.5KE170(C)(A) 1.5KE18(C)(A) 1.5KE180(C)(A)
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5KE10
5KE100
5KE11
5KE110
5KE12
5KE120
5KE13
5KE130
5KE15
5KE150
MBR1620CT
1.5Ke240
MBR5020
MBR5045PT
BC337
AP6KE15C
S9012
s9018
MP106
MB-106
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KTA1298
Abstract: KTC3265 KTA1298 kec
Text: SEMICONDUCTOR TECHNICAL DATA KTA1298 EPITA XIA L PLANAR PNP TR A N SISTO R LOW FREQUENCY POWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATION. FEATURES • High DC Current Gain : 1ife =100~320. • Low Saturation Voltage : VcE sat =_0.4V(Max.) (Ic=-500mA, IB=-20mA).
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KTA1298
-500mA,
-20mA)
KTC3265.
KTA1298
KTC3265
KTA1298 kec
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KTA1298
Abstract: KTC3265
Text: SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. KTA1298 EPITAXIAL PLANAR PNP TRANSISTOR LOW FREQUENCY PO W ER A M PLIFIER APPLICATION. POW ER SW ITCHING APPLICATION. FE A T U R E S • High DC Current Gain : hFE=100~320. • Low Saturation Voltage
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KTA1298
-500mA,
-20mA)
KTC3265.
KTA1298
KTC3265
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