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    KTC3265 Price and Stock

    KEC KTC3265-Y-RTK/P

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components KTC3265-Y-RTK/P 2,388
    • 1 $1.11
    • 10 $1.11
    • 100 $1.11
    • 1000 $0.444
    • 10000 $0.3885
    Buy Now

    Luguang Electronic Technology Co Ltd KTC3265

    Transistor: NPN; bipolar; 30V; 0.8A; 0.2W; SOT23
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME KTC3265 10
    • 1 -
    • 10 $0.0799
    • 100 $0.0494
    • 1000 $0.0392
    • 10000 $0.0353
    Get Quote

    KTC3265 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KTC3265 Galaxy Semi-Conductor Holdings NPN Silicon Epitaxial Planar Transistor Original PDF
    KTC3265 Korea Electronics General Purpose Transistor Original PDF
    KTC3265 Korea Electronics EPITAXIAL PLANAR NPN TRANSISTOR Scan PDF
    KTC3265 Korea Electronics General Purpose Transistor Scan PDF
    KTC3265 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    KTC3265 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF

    KTC3265 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    transistor 1g

    Abstract: MARKING 1G TRANSISTOR ktc32 KTA1298
    Text: KTA1298 SEMICONDUCTOR TECHNICAL DATA Shandong Yiguang Electronic Joint stock Co., Ltd * PNP EPITAXIAL SILICON TRANSISTOR Complement to KTC3265 ABSOLUTE MAXIMUM RATINGS at Ta=25℃ Characteristic Symbol Rating Package:SOT-23 Unit Collector-Base Voltage Vcbo


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    KTA1298 KTC3265 OT-23 -10uA -500mA -20mA -10mA 062in -100mA 300uS transistor 1g MARKING 1G TRANSISTOR ktc32 KTA1298 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors KTC3265 SOT-23 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current 0.8 A ICM: Collector-base voltage


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    OT-23 KTC3265 OT-23 100mA 100MHz PDF

    transistor ey

    Abstract: sot-23 EY KTC1298 transistor marking code EY KTC3265 NPN Silicon Epitaxial Planar Transistor EY transistor npn transistor Marking EY
    Text: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES KTC3265 Pb z High DC current gain: hFE:100-320 z Low saturation voltage. z Suitable for driver stage of small motor. z Complementary to KTC1298. z Small package.


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    KTC3265 KTC1298. OT-23 BL/SSSTC109 transistor ey sot-23 EY KTC1298 transistor marking code EY KTC3265 NPN Silicon Epitaxial Planar Transistor EY transistor npn transistor Marking EY PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors KTC3265 SOT-23 TRANSISTOR NPN FEATURES 1. BASE 2. EMITTER z z 3. COLLECTOR High DC current gain: hFE=100-320 Complementary to KTA1298 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


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    OT-23 KTC3265 OT-23 KTA1298 100mA 500mA, 100MHz PDF

    KTA1298

    Abstract: KTC3265 EY transistor Transistor Marking EY npn transistor Marking EY
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors KTC3265 SOT-23 TRANSISTOR NPN FEATURES 1. BASE 2. EMITTER z z 3. COLLECTOR High DC current gain Complementary to KTA1298 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


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    OT-23 KTC3265 OT-23 KTA1298 100mA 500mA, 100MHz KTA1298 KTC3265 EY transistor Transistor Marking EY npn transistor Marking EY PDF

    KTC3265

    Abstract: No abstract text available
    Text: KTC3265 NPN General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 MAXIMUM RATINGS(Ta=25°C) Symbol Value Unit Collector-Emitter Voltage VCEO 30 V Collector-Base Voltage VCBO 35 V Emitter-Base Voltage VEBO 5.0 V Collector Current - Continuous IC 800 mA


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    KTC3265 OT-23 29-Aug-06 02-Aug-06 OT-23 KTC3265 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors KTC3265 SOT—23 ) TRANSISTOR( NPN 1. BASE 2. EMITTER FEATURES 1.0 3. COLLECTOR ∙ High DC current gain: hFE=100-320 2.4 1.3 0.95 0.4 0.95 1.9 2.9 ∙ Complementary to kta1298


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    OT-23 KTC3265 kta1298 100mA 100MHz PDF

    ktc32

    Abstract: sot-23 EY EY transistor
    Text: KTC3265 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — High DC current gain: hFE=100-320 Complementary to KTA1298 — Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value


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    KTC3265 OT-23 OT-23 KTA1298 100mA 500mA, 100MHz ktc32 sot-23 EY EY transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: KTC3265 NPN General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 MAXIMUM RATINGS(Ta=25°C) Symbol Value Unit Collector-Emitter Voltage VCEO 30 V Collector-Base Voltage VCBO 35 V Emitter-Base Voltage VEBO 5.0 V Collector Current - Continuous IC 800 mA


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    KTC3265 OT-23 29-Aug-06 02-Aug-06 OT-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTC3265 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW FREQUENCY POWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATION. FEATURES ・High DC Current Gain : hFE=100~320. ・Low Saturation Voltage : VCE sat =0.4V(Max.) (IC=500mA, IB=20mA).


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    500mA, KTA1298. KTC3265 800mA 100MHz 100mA PDF

    marking EY

    Abstract: transistor ey KTC3265 EY marking
    Text: SEMICONDUCTOR KTC3265 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking EY No. 1 Item Marking Device Mark E KTC3265 hFE Grade Y O,Y * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method


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    KTC3265 OT-23 marking EY transistor ey KTC3265 EY marking PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors KTC3265 SOT-23 TRANSISTOR NPN FEATURES 1. BASE 2. EMITTER z z 3. COLLECTOR High DC current gain Complementary to KTA1298 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


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    OT-23 KTC3265 OT-23 KTA1298 PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTC3265 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW FREQUENCY POWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATION. FEATURES 1998. 6. 15 Revision No : 1 1/2


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    KTC3265 PDF

    Untitled

    Abstract: No abstract text available
    Text: SOT-23 Plastic-Encapsulate Transistors KTC3265 SOT—23 ) TRANSISTOR( NPN 1. BASE 2. EMITTER FEATURES 1.0 3. COLLECTOR ∙ High DC current gain: hFE=100-320 2.4 1.3 0.95 0.4 0.95 1.9 2.9 ∙ Complementary to kta1298 Unit : mm MAXIMUM RATINGS* TA=25℃ unless otherwise noted


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    OT-23 KTC3265 kta1298 100mA 100MHz PDF

    MBR1620CT

    Abstract: 1.5Ke240 MBR5020 MBR5045PT BC337 AP6KE15C S9012 s9018 MP106 MB-106
    Text: MCC PART INDEX Diodes PART NUMBER 1.5KE10(C)(A) 1.5KE100(C)(A) 1.5KE11(C)(A) 1.5KE110(C)(A) 1.5KE12(C)(A) 1.5KE120(C)(A) 1.5KE13(C)(A) 1.5KE130(C)(A) 1.5KE15(C)(A) 1.5KE150(C)(A) 1.5KE16(C)(A) 1.5KE160(C)(A) 1.5KE17(C)(A) 1.5KE170(C)(A) 1.5KE18(C)(A) 1.5KE180(C)(A)


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    5KE10 5KE100 5KE11 5KE110 5KE12 5KE120 5KE13 5KE130 5KE15 5KE150 MBR1620CT 1.5Ke240 MBR5020 MBR5045PT BC337 AP6KE15C S9012 s9018 MP106 MB-106 PDF

    secos gmbh

    Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
    Text: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers


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    SGSR809-A SC-59 SGSR809-B SGSR809-C SGSR809-D SGSR809-E secos gmbh c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649 PDF

    alternator diode 1776 B

    Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
    Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)


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    Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent PDF

    Transistor S8550 2TY

    Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6
    Text: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250


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    OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W Transistor S8550 2TY Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6 PDF

    khb*9D5N20P

    Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
    Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC


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    2N2904E BC859 KDS135S 2N2906E BC860 KAC3301QN KDS160 2N3904 BCV71 KDB2151E khb*9D5N20P khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTA1298 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW FREQUENCY POWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATION. FEATURES ・High DC Current Gain : hFE=100~320. ・Low Saturation Voltage : VCE sat =-0.4V(Max.) (IC=-500mA, IB=-20mA).


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    -500mA, -20mA) KTC3265. KTA1298 -800mA -20mA -10mA -10mA, PDF

    KTA1298

    Abstract: KTC3265 KTA1298 kec
    Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTC3265 EPITAXIAL PLANAR NPN TRANSISTOR LOW FREQUENCY POWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATION. FEATURES • High DC Current Gain : Iife—100 320. • Low Saturation Voltage : V cE sat = 0.4V (Max.) (Ic=500mA, IB=20mA).


    OCR Scan
    KTC3265 500mA, KTA1298. Ic/Ib-25 KTA1298 KTC3265 KTA1298 kec PDF

    KTA1298

    Abstract: KTC3265
    Text: SEMICONDUCTOR TECHNICAL DATA KTC3265 EPITAXIAL PLANAR NPN TRANSISTOR LOW FREQUENCY POWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATION. FEATURES • High DC Current Gain : Iife—100 320. • Low Saturation Voltage : V cE sat = 0.4V (Max.) (Ic=500mA, IB=20mA).


    OCR Scan
    KTC3265 500mA, KTA1298. KTA1298 KTC3265 PDF

    KTA1298

    Abstract: KTC3265 KTA1298 kec
    Text: SEMICONDUCTOR TECHNICAL DATA KTA1298 EPITA XIA L PLANAR PNP TR A N SISTO R LOW FREQUENCY POWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATION. FEATURES • High DC Current Gain : 1ife =100~320. • Low Saturation Voltage : VcE sat =_0.4V(Max.) (Ic=-500mA, IB=-20mA).


    OCR Scan
    KTA1298 -500mA, -20mA) KTC3265. KTA1298 KTC3265 KTA1298 kec PDF

    KTA1298

    Abstract: KTC3265
    Text: SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. KTA1298 EPITAXIAL PLANAR PNP TRANSISTOR LOW FREQUENCY PO W ER A M PLIFIER APPLICATION. POW ER SW ITCHING APPLICATION. FE A T U R E S • High DC Current Gain : hFE=100~320. • Low Saturation Voltage


    OCR Scan
    KTA1298 -500mA, -20mA) KTC3265. KTA1298 KTC3265 PDF