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    KTA1666 Price and Stock

    KEC KTA1666-Y-RTF/P

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    KTA1666 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KTA1666 Kexin Epitaxial Planar PNP Transistor Original PDF
    KTA1666 Korea Electronics Switching Transistor Original PDF
    KTA1666 TY Semiconductor Epitaxial Planar PNP Transistor - SOT-89 Original PDF
    KTA1666 Korea Electronics EPITAXIAL PLANAR PNP TRANSISTOR Scan PDF
    KTA1666 Korea Electronics Switching Transistor Scan PDF

    KTA1666 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Product specification KTC4379 SOT-89 • Features Unit:mm 1.50 ±0.1 4.50±0.1 1.80±0.1 2.50±0.1 4.00±0.1 ● Collector Power Dissipation: PC=500mW ● Collector Current: IC=2A ● Complementary to KTA1666 0.53±0.1 0.80±0.1 3 0.44±0.1 0.40±0.1 0.48±0.1


    Original     		KTC4379 OT-89 500mW KTA1666 500mA PDF

    MARKING WY SOT-89

    Abstract: WY sot-89 KTA1666 transistor marking WY PLANAR TRANSISTOR WY Marking WO
    Text: KTA1666 PNP EPITAXIAL PLANAR TRANSISTOR P b Lead Pb -Free 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 SOT-89 ABSOLUTE MAXIMUM RATINGS(Ta Rating Symbol Value Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -5


    Original     		KTA1666 OT-89 05-Feb-09 OT-89 500TYP MARKING WY SOT-89 WY sot-89 KTA1666 transistor marking WY PLANAR TRANSISTOR WY Marking WO PDF

    WY transistor

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors KTA1666 SOT-89 TRANSISTOR PNP 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 0.5 1 W (Tamb=25℃) 2 3. EMITTER Collector current -2 A ICM: Collector-base voltage


    Original     		OT-89 KTA1666 OT-89 -10mA, -500mA -50mA WY transistor PDF

    KTA1666

    Abstract: KTC4379 SOT89 UY marking UY
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors KTC4379 SOT-89 TRANSISTOR NPN 1. BASE FEATURES z Low saturation voltage z High speed switching time z Complementary to KTA1666 2. COLLECTOR 1 2 3. EMITTER 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		OT-89 KTC4379 OT-89 KTA1666 500mA KTA1666 KTC4379 SOT89 UY marking UY PDF

    WY smd transistor

    Abstract: smd transistor marking wy
    Text: Transistors IC SMD Type Epitaxial Planar PNP Transistor KTA1666 SOT-89 • Features Unit: mm +0.1 4.50-0.1 +0.1 1.50-0.1 ● Collector Power dissipation: PC=500mW +0.1 2.50-0.1 ● Collector Current -Continuous: IC=-2A 3 +0.1 0.53-0.1 +0.1 0.44-0.1 +0.1 -0.1


    Original     		KTA1666 OT-89 500mW WY smd transistor smd transistor marking wy PDF

    SMD transistor UY

    Abstract: No abstract text available
    Text: Transistors SMD Type Epitaxial Planar NPN Transistor KTC4379 SOT-89 • Features Unit:mm 1.50 ±0.1 4.50±0.1 1.80±0.1 2.50±0.1 4.00±0.1 ● Collector Power Dissipation: PC=500mW ● Collector Current: IC=2A ● Complementary to KTA1666 0.53±0.1 0.80±0.1


    Original     		KTC4379 OT-89 500mW KTA1666 500mA SMD transistor UY PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTA1666 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. A FEATURES C H ᴌLow Saturation Voltage G J B E : VCE sat =-0.5V(Max.) (IC=-1A) ᴌHigh Speed Switching Time : tstg=1.0Ọ S(Typ.)


    Original     		KTA1666 KTC4379. 250mm2 PDF

    MARKING WY SOT-89

    Abstract: WY transistor WY sot-89 transistor marking WY KTA1666 marking wy
    Text: KTA1666 KTA1666 SOT-89 TRANSISTOR PNP 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 0.5 1 W (Tamb=25℃) 2 3. EMITTER Collector current ICM: -2 A Collector-base voltage -50 V V(BR)CBO: Operating and storage junction temperature range 3 TJ, Tstg: -55℃ to +150℃


    Original     		KTA1666 OT-89 -10mA, -500mA -50mA MARKING WY SOT-89 WY transistor WY sot-89 transistor marking WY KTA1666 marking wy PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L KTA1666 TRANSISTOR PNP 1. BASE FEATURES z Complementary to KTC4379 z Small Flat Package z Low Saturation Voltage z Power Amplifier and Switching Application


    Original     		OT-89-3L OT-89-3L KTA1666 KTC4379 -500mA -50mA 300mS, PDF

    WY smd transistor

    Abstract: SMD TRANSISTOR MARKING wy
    Text: Diodes IC Transistors Transistor T SMD Type Product specification KTA1666 SOT-89 • Features Unit: mm +0.1 4.50-0.1 +0.1 1.50-0.1 ● Collector Power dissipation: PC=500mW +0.1 2.50-0.1 ● Collector Current -Continuous: IC=-2A 3 +0.1 0.53-0.1 +0.1 0.44-0.1


    Original     		KTA1666 OT-89 500mW WY smd transistor SMD TRANSISTOR MARKING wy PDF

    Untitled

    Abstract: No abstract text available
    Text: KTA1666 NPN EPITAXIAL PLANAR TRANSISTOR P b Lead Pb -Free 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 SOT-89 ABSOLUTE MAXIMUM RATINGS(Ta Rating Symbol Value Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -5


    Original     		KTA1666 OT-89 05-Feb-09 OT-89 500TYP PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors KTC4379 SOT-89-3L TRANSISTOR NPN 1. BASE FEATURES z Low saturation voltage z High speed switching time z Complementary to KTA1666 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		OT-89-3L KTC4379 OT-89-3L KTA1666 500mA PDF

    transistor

    Abstract: KTA1666
    Text: SEMICONDUCTOR KTA1666 MARKING SPECIFICATION SOT-89 PACKAGE 1. Marking method Laser Marking 2. Marking No. Item Marking Description Device Mark W KTA1666 * Grade O O,Y Lot No. 816 1 2 8 Year 0 ~ 9 : 1900~1999 16 Week 16 : 16th Week Note * Grade: Transistor only


    Original     		KTA1666 OT-89 transistor KTA1666 PDF

    SOT89 UY

    Abstract: MARKING UY marking 01, sot-89 1a SOT89
    Text: KTC4379 SOT-89 Transistor NPN 1. BASE SOT-89 2. COLLECTOR 1 2 3. EMITTER 4.6 4.4 1.8 1.4 1.6 1.4 3 B Features — — — 2.6 4.25 2.4 3.75 Low saturation voltage High speed switching time Complementary to KTA1666 0.8 MIN 0.44 0.37 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		KTC4379 OT-89 OT-89 KTA1666 500mA SOT89 UY MARKING UY marking 01, sot-89 1a SOT89 PDF

    Untitled

    Abstract: No abstract text available
    Text: TPS65166 www.ti.com. SLVS976 – SEPTEMBER 2009 Compact LCD Bias Supply for TFT-LCD TV Panels


    Original     		TPS65166 SLVS976 750kHz PDF

    alternator diode 1776 B

    Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
    Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)


    Original     		Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent PDF

    Transistor S8550 2TY

    Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6
    Text: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250


    Original     		OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W Transistor S8550 2TY Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6 PDF

    khb*9D5N20P

    Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
    Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC


    Original     		2N2904E BC859 KDS135S 2N2906E BC860 KAC3301QN KDS160 2N3904 BCV71 KDB2151E khb*9D5N20P khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: TPS65166 www.ti.com. SLVS976 – SEPTEMBER 2009 Compact LCD Bias Supply for TFT-LCD TV Panels


    Original     		TPS65166 SLVS976 750kHz PDF

    LM8550

    Abstract: KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960
    Text: Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC 2N2222/A Motorola KTN2222/A 2SA1150 Toshiba KTA1272 2SA1510 Sanyo KRA1 10S 2SB546A NEC KTB 1369 2N2369/A Motorola KTN2369/A 2SA1151 NEC KTA1266 2SA1511 Sanyo KRA1 10M 2SB560 Sanyo


    Original     		2N2222/A KTN2222/A 2SA1150 KTA1272 2SA1510 2SB546A 2N2369/A KTN2369/A 2SA1151 KTA1266 LM8550 KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960 PDF

    Y2 transistor

    Abstract: Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882
    Text: >>JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. >>Tel: 86-510-6852812*12 >>Fax: 86-510-6858792 >>http://www.cj-elec.com >>http://www.globalsources.com/cjet.co >>Email:huaxing20@hotmail.com huaxing20@sohu.com >> Huaxing Lee DIODES IN SOD-123


    Original     		huaxing20 OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W Y2 transistor Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882 PDF

    KIA78*pI

    Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
    Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC


    Original     		2N2904E BC859 KDS135S 2N2906E BC860 KAC3301QN KDS160 2N3904 BCV71 KDB2151E KIA78*pI transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P PDF

    marking Kf SOT-89

    Abstract: c71d KTA1666 KTC4379
    Text: KEC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTA1666 EPITAXIAL PLANAR PNP TRANSISTOR POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. FEATURES • Low Saturation Voltage : VCE Sat =-0.5V (Max.) (IC=-1A) • High Speed Switching Time : tstg=1.0^S(Typ.)


    OCR Scan     		KTA1666 KTC4379. KTA1666 250mm2x marking Kf SOT-89 c71d KTC4379 PDF

    sot-89, amplifier, H1

    Abstract: H1 SOT-89 amplifier A1666 KTA1666 KTC4379
    Text: K E C SEMICONDUCTOR KTA1666 TECHNICAL DATA e p it a x ia l p l a n a r p n p ti POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. FEATURES • Low Saturation Voltage : VcE sat =- 0.5V(Max.) (Ic=-1A) • High Speed Switching Time : tstg=1.0//S(Typ.)


    OCR Scan     		A1666 KTC4379. KTA1666 250mm2x sot-89, amplifier, H1 H1 SOT-89 amplifier A1666 KTC4379 PDF