KTC2876
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC2876 TECHNICAL DATA SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE FOR MUTING AND SWITCHING APPLICATION. FEATURES B High Emitter-Base Voltage : VEBO=25V Min. A High Reverse hFE : Reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) O F Low on Resistance : RON=1 (Typ.), (IB=5mA)
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KTC2876
KTC2876
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KTC2876
Abstract: c2876
Text: SEMICONDUCTOR KTC2876 MARKING SPECIFICATION TO-92M PACKAGE 1. Marking method Laser Marking or Ink Marking. 2. Marking C2876 1 A 2 No. 2005. 8 .11 516 3 Item Marking Description Device Name C2876 KTC2876 hFE Grade A A, B Lot No. 516 Revision No : 0 5 Year 0~9 : 2000~2009
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KTC2876
O-92M
C2876
KTC2876
c2876
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hFE-150
Abstract: KTC2876
Text: SEMICONDUCTOR KTC2876 TECHNICAL DATA SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE FOR MUTING AND SWITCHING APPLICATION. FEATURES B ・High Emitter-Base Voltage : VEBO=25V Min. A ・High Reverse hFE : Reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) O F ・Low on Resistance : RON=1Ω(Typ.), (IB=5mA)
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KTC2876
O-92M
hFE-150
KTC2876
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khb*9D5N20P
Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC
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2N2904E
BC859
KDS135S
2N2906E
BC860
KAC3301QN
KDS160
2N3904
BCV71
KDB2151E
khb*9D5N20P
khb9d0n90n
6v Zener diode
khb*2D0N60P
transistor
KHB7D0N65F
BC557 transistor
kia*278R33PI
KHB9D0N90N circuit
ktd998 transistor
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KIA78*pI
Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC
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2N2904E
BC859
KDS135S
2N2906E
BC860
KAC3301QN
KDS160
2N3904
BCV71
KDB2151E
KIA78*pI
transistor
KIA78*p
TRANSISTOR 2N3904
khb*9D5N20P
khb9d0n90n
KID65004AF
TRANSISTOR mosfet
KIA7812API
khb*2D0N60P
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MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors
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KIA7900PI
TC7SH04FU
KIC7SH04FU
SC604*
KAC3301QN
M51943
KIA7042AP/AF
TC7SH08FU
KIC7SH08FU
LT1937
oz960
khb*9D5N20P
MB4213
KIA78*pI
MN1280
F10P048
KIA7812A
MJE13007
mb4213 equivalent
TRANSISTOR SMD N2 3j
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Untitled
Abstract: No abstract text available
Text: SEM ICONDUCTOR KTC2876 TE CHNICAL DATA SILIC O N NPN T R A N SIST O R E P IT A X IA L P LA N A R T Y P E FOR MU TIN G A N D S W ITC H IN G A PPLICATION. FEA T U RE S • High Emitter-Base Voltage : V EBO=25V Min. • High Reverse h FE : Reverse h FE=150(Typ.) (VCE=-2V, Ic=-4mA)
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KTC2876
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