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    United Chemi-Con Inc KTD101B155K32A0B00

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    DigiKey KTD101B155K32A0B00 Bulk 4,000 1
    • 1 $1.5
    • 10 $0.946
    • 100 $0.6525
    • 1000 $0.49638
    • 10000 $0.43286
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    United Chemi-Con Inc KTD101B225K32A0B00

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    DigiKey KTD101B225K32A0B00 Bulk 4,000 1
    • 1 $1.52
    • 10 $0.956
    • 100 $0.6602
    • 1000 $0.5403
    • 10000 $0.43318
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    United Chemi-Con Inc KTD101B684K32A0B00

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    DigiKey KTD101B684K32A0B00 Bulk 4,000 1
    • 1 $1.48
    • 10 $0.93
    • 100 $0.6405
    • 1000 $0.48674
    • 10000 $0.42419
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    United Chemi-Con Inc KTD101B335K55A0B00

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    DigiKey KTD101B335K55A0B00 Bulk 4,000 1
    • 1 $2.04
    • 10 $1.305
    • 100 $0.9176
    • 1000 $0.76062
    • 10000 $0.62027
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    United Chemi-Con Inc KTD101B155K43A0B00

    CERAMIC CAP
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    DigiKey KTD101B155K43A0B00 Bulk 4,000 1
    • 1 $1.6
    • 10 $1.014
    • 100 $0.7029
    • 1000 $0.57668
    • 10000 $0.46388
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    KTD10 Datasheets (45)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KTD1003 Korea Electronics High hFE Transistor Original PDF
    KTD1003 Korea Electronics EPITAXIAL PLANAR NPN TRANSISTOR Scan PDF
    KTD1003 Korea Electronics High hFE Transistor Scan PDF
    KTD1003 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    KTD1003 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    KTD1003-A Korea Electronics TRANS GP BJT NPN 50V 1A 3SOT-89 Original PDF
    KTD1003-B Korea Electronics TRANS GP BJT NPN 50V 1A 3SOT-89 Original PDF
    KTD1003-C Korea Electronics TRANS GP BJT NPN 50V 1A 3SOT-89 Original PDF
    KTD101B105M32A0T00 Nippon Chemi-Con Ceramic Capacitors, Capacitors, CAP CER 1UF 100V 20% RADIAL Original PDF
    KTD101B106M80A0B00 Chemi-Con Capacitors - Ceramic Capacitors - CAP CER 10UF 100V X7R RADIAL Original PDF
    KTD101B107M99A0B00 Chemi-Con Capacitors - Ceramic Capacitors - CAP CER 100UF 100V X7R RADIAL Original PDF
    KTD101B155M32A0T00 Nippon Chemi-Con Ceramic Capacitors, Capacitors, CAP CER 1.5UF 100V 20% RADIAL Original PDF
    KTD101B155M43A0T00 Chemi-Con Capacitor: 1.5UF: 100: X7R: 20%: 5: RDL Original PDF
    KTD101B156M80A0B00 Chemi-Con Capacitors - Ceramic Capacitors - CAP CER 15UF 100V X7R RADIAL Original PDF
    KTD101B225M32A0T00 Nippon Chemi-Con Ceramic Capacitors, Capacitors, CAP CER 2.2UF 100V 20% RADIAL Original PDF
    KTD101B225M43A0T00 Chemi-Con Capacitor: 2.2UF: 100: X7R: 20%: 5: RDL Original PDF
    KTD101B226M90A0B00 Chemi-Con Capacitors - Ceramic Capacitors - CAP CER 22UF 100V X7R RADIAL Original PDF
    KTD101B334M32A0T00 Chemi-Con Capacitor: 330nF: 100: X7R: 20%: 5: RDL Original PDF
    KTD101B335M43A0T00 Nippon Chemi-Con Ceramic Capacitors, Capacitors, CAP CER 3.3UF 100V 20% RADIAL Original PDF
    KTD101B335M55A0T00 Chemi-Con Capacitor: 3.3UF: 100: X7R: 20%: 5: RDL Original PDF

    KTD10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    mark A sot-89

    Abstract: KTD1003
    Text: SEMICONDUCTOR KTD1003 MARKING SPECIFICATION SOT-89 PACKAGE 1. Marking method Laser Marking 2. Marking No. Item Marking Description Device Mark L KTD1003 * Grade A A,B,C Lot No. 816 1 2 8 Year 0 ~ 9 : 1900~1999 16 Week 16 : 16th Week Note * Grade: Transistor only


    Original     		PDF KTD1003 OT-89 mark A sot-89 KTD1003

    KTD1003

    Abstract: Transistor hFE CLASSIFICATION Marking CE
    Text: SEMICONDUCTOR KTD1003 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURES A ᴌHigh DC Current Gain C H : hFE=800ᴕ3200. VCE=5.0V, IC=300mA . G J B E ᴌWide Area of Safe Operation. ᴌLow Collector Saturation Voltage DIM A


    Original     		PDF KTD1003 300mA) 500mA, KTD1003 Transistor hFE CLASSIFICATION Marking CE

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTD1003 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURES A ᴌHigh DC Current Gain C H : hFE=800ᴕ3200. VCE=5.0V, IC=300mA . G J B E ᴌWide Area of Safe Operation. ᴌLow Collector Saturation Voltage DIM A


    Original     		PDF KTD1003 300mA) 500mA,

    KTB817

    Abstract: KTD104 KTD1047
    Text: SEMICONDUCTOR KTB817 TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. Q B K F A I FEATURES E Complementary to KTD1047. C Recommended for 60W Audio Frequency G J H Amplifier Output Stage. L D MAXIMUM RATING Ta=25 CHARACTERISTIC


    Original     		PDF KTB817 KTD1047. KTB817 KTD104 KTD1047

    transistor KTB817

    Abstract: KTD1047 KTD1047c transistor ktd1047 KTB817 ktd10 IC1-A10
    Text: SEMICONDUCTOR KTB817 TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A Q K I F FEATURES B E ᴌComplementary to KTD1047. C ᴌRecommended for 60W Audio Frequency G J H Amplifier Output Stage. L D MAXIMUM RATING Ta=25ᴱ CHARACTERISTIC


    Original     		PDF KTB817 KTD1047. transistor KTB817 KTD1047 KTD1047c transistor ktd1047 KTB817 ktd10 IC1-A10

    transistor KTB817

    Abstract: KTB817 transistor ktd1047 KTD1047
    Text: SEMICONDUCTOR KTB817 TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A Q K I F FEATURES B E Complementary to KTD1047. C Recommended for 60W Audio Frequency G J H Amplifier Output Stage. L D MAXIMUM RATING Ta=25 CHARACTERISTIC


    Original     		PDF KTB817 KTD1047. transistor KTB817 KTB817 transistor ktd1047 KTD1047

    d1047

    Abstract: transistor d1047 k d1047 KD1047 transistor d1047 -diagrama transistor d1047 -voltaje D1047Y d1047 -diagrama KTD1047 TO-3PN
    Text: SEMICONDUCTOR KTD1047 MARKING SPECIFICATION TO-3P N PACKAGE 1. Marking method Laser Marking or Ink Marking 2. Marking K D1047 Y 816 No. Item Marking 1 KEC K KEC CORP. 2 Device Name D1047 KTD1047 3 hFE Grade Y O,Y 4 Lot No. 816 98.06.23 Revision No : 00 Description


    Original     		PDF KTD1047 D1047 d1047 transistor d1047 k d1047 KD1047 transistor d1047 -diagrama transistor d1047 -voltaje D1047Y d1047 -diagrama KTD1047 TO-3PN

    D1028

    Abstract: TO-92L hFE kec KTD1028 D10-28 DSA0010554
    Text: SEMICONDUCTOR KTD1028 MARKING SPECIFICATION TO-92L PACKAGE 1. Marking method Laser Marking 2. Marking No. Item Marking Description 1 Device Name D1028 KTD1028 2 Lot No. 816 98.06.23 8 Year 0 ~ 9 : 1900~1999 16 Week 16 : 16th Week 3 KEC K KEC CORP. 4 hFE Grade


    Original     		PDF KTD1028 O-92L D1028 D1028 TO-92L hFE kec KTD1028 D10-28 DSA0010554

    KTD1028

    Abstract: B1200
    Text: SEMICONDUCTOR KTD1028 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURES High DC Current Gain : hFE=800 3200 VCE=5.0V, IC=300mA . Wide Area of Safe Operation. Low Collector Saturation Voltage. : VCE(sat)=0.17V (IC=500mA, IB=5.0mA).


    Original     		PDF KTD1028 300mA) 500mA, 300mA 500mA 100mA KTD1028 B1200

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTD1047B TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. FEATURES 2011. 3. 18 Revision No : 0 1/3


    Original     		PDF KTD1047B

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTB817B TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. FEATURES ・Complementary to KTD1047B. ・Recommended for 60W Audio Frequency Amplifier Output Stage. MAXIMUM RATING Ta=25℃ CHARACTERISTIC SYMBOL RATING


    Original     		PDF KTD1047B. KTB817B

    transistor ktd1047

    Abstract: KTB817 KTD1047
    Text: SEMICONDUCTOR KTD1047 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. Q B K F A I FEATURES E ᴌComplementary to KTB817. C ᴌRecommended for 60W Audio Frequency G J H Amplifier Output Stage. L D MAXIMUM RATING Ta=25ᴱ CHARACTERISTIC


    Original     		PDF KTD1047 KTB817. transistor ktd1047 KTB817 KTD1047

    KTB817b

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTD1047B TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A N O FEATURES ・Complementary to KTB817B. B Q K F ・Recommended for 60W Audio Frequency R G H I C J Amplifier Output Stage. D MAXIMUM RATING Ta=25℃


    Original     		PDF KTB817B. KTD1047B KTB817b

    KTD1028

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTD1028 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. B FEATURES D ᴌHigh DC Current Gain A : hFE=800ᴕ3200 VCE=5.0V, IC=300mA . ᴌWide Area of Safe Operation. P DEPTH:0.2 ᴌLow Collector Saturation Voltage. C


    Original     		PDF KTD1028 300mA) 500mA, KTD1028

    Untitled

    Abstract: No abstract text available
    Text: DIPPED RADIAL LEAD MULTILAYER CERAMIC CAPACITORS NTD Series RoHS Compliant ◆FEATURES 1. Small in size and wide capacitance range. Max. 470µF is available. 2. Temperature characteristic is X7R in EIA code. 3. Superior humidity characteristic and long life.


    Original     		PDF 250Vdc TerD101B685M55A0T00 KTD101B685M76A0T00 KTD101B106M80A0B00 KTD101B156M80A0B00 KTD101B226M90A0B00 KTD101B336M90A0B00 KTD101B476M99A0B00 KTD101B686M99A0B00 KTD101B107M99A0B00

    alternator diode 1776 B

    Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
    Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)


    Original     		PDF Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent

    KTD1028

    Abstract: No abstract text available
    Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTD1028 EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURES • High DC Current Gain : hFE=800~3200 VCe=5.0V, Ic=300mA . • Wide Area of Safe Operation. • Low Collector Saturation Voltage


    OCR Scan     		PDF KTD1028 300mA) 500mA, T0-92L KTD1028

    transistor KTB817

    Abstract: transistor ktd1047 KTB817 KTD1047
    Text: KEC SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. KTB817 TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. FEATURES • Complementary to KTD1047. • Recommended for 60W Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta=25°C


    OCR Scan     		PDF KTB817 KTD1047. transistor KTB817 transistor ktd1047 KTB817 KTD1047

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR TECHNICAL DATA KTD1028 EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURES • High DC Current Gain : hFE=800~3200 Vce=5.0V, Ic=300mA . • Wide Area of Safe Operation. • Low Collector Saturation Voltage : VCE(sat)=0.17V (Ic=500mA, IB=5.0mA).


    OCR Scan     		PDF KTD1028 300mA) 500mA, 300mA 100mA C2000-3200

    KTD1028

    Abstract: No abstract text available
    Text: SEMICONDUCTOR TECHNICAL DATA KTD1028 EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURES • High DC Current Gain : hFE=800~3200 Vce=5.0V, Ic=300mA . • Wide Area of Safe Operation. • Low Collector Saturation Voltage : VCE(sat)=0.17V (Ic=500mA, IB=5.0mA).


    OCR Scan     		PDF KTD1028 300mA) 500mA, KTD1028

    transistor ktd1047

    Abstract: KTB817 KTD1047
    Text: KEC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTD1047 TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. FEATURES • Complementary to KTB817. • Recommended for 60W Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta=25°C


    OCR Scan     		PDF KTD1047 KTB817. transistor ktd1047 KTB817 KTD1047

    KTD1003

    Abstract: No abstract text available
    Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTD1003 EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURES • High DC Current Gain : hFE=800~3200. VcE=5.0V, Ic=300mA . • Wide Area of Safe Operation. • Low Collector Saturation Voltage


    OCR Scan     		PDF KTD1003 300mA) 500mA, KTD1003 250mm

    KTD1003

    Abstract: KEC SOT89
    Text: SEMICONDUCTOR TECHNICAL DATA KTD1003 EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURES • High DC Current Gain : hFE=800~ 3200. VcE=5.0V, Ic=300mA . • Wide Area of Safe Operation. • Low Collector Saturation Voltage : VcEfeat)=0.17V(Ic=500mA, IB=5.0mA).


    OCR Scan     		PDF KTD1003 300mA) 500mA, KTD1003 250mm 100mA KEC SOT89

    transistor ktd1047

    Abstract: KTD1047 KTB817 IC24L
    Text: SEMICONDUCTOR KTD1047 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. FEATURES • Complementary to KTB817. • Recommended for 60W Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta=25°C SYMBOL RATING UNIT Collector-Base Voltage


    OCR Scan     		PDF KTD1047 KTB817. transistor ktd1047 KTD1047 KTB817 IC24L