KTD525 Search Results

KTD525 Datasheets (7)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
KTD525		Korea Electronics	General Purpose Transistor		Original	PDF
KTD525		Korea Electronics	TRIPLE DIFFUSED NPN TRANSISTOR		Scan	PDF
KTD525		Korea Electronics	General Purpose Transistor		Scan	PDF
KTD525		Korea Electronics	Power Transistors / Transistors		Scan	PDF
KTD525		Korea Electronics	Transistors		Scan	PDF
KTD525		Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)		Short Form	PDF
KTD525		Unknown	Shortform Data and Cross References (Misc Datasheets)		Short Form	PDF

KTD525 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
KTB595 Abstract: KTD525 Text: SEMICONDUCTOR KTB595 TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR GENERAL PURPOSE APPLICATION. A R S FEATURES E ᴌHigh Breakdown Voltage : VCEO=-100V. F ᴌLow Collector-Emitter Saturation Voltage. P Q D B : VCE sat =-2.0V(Max.) ᴌComplementary to KTD525.	Original	KTB595 -100V. KTD525. 100ms KTB595 KTD525	PDF
KTB595 Abstract: KTD525 Text: SEMICONDUCTOR KTD525 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A R S FEATURES E ᴌLow Collector-Emitter Saturation Voltage. F : VCE sat =2.0V(Max.) P Q D B ᴌComplementary to KTB595. MAXIMUM RATING (Ta=25ᴱ) RATING UNIT	Original	KTD525 KTB595. KTB595 KTD525	PDF
KTD525 Abstract: KTB595 Text: SEMICONDUCTOR KTB595 TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR GENERAL PURPOSE APPLICATION. A R S FEATURES E ᴌHigh Breakdown Voltage : VCEO=-100V. F ᴌLow Collector-Emitter Saturation Voltage. P Q D B : VCE sat =-2.0V(Max.) ᴌComplementary to KTD525.	Original	KTB595 -100V. KTD525. 100ms KTD525 KTB595	PDF
SSP35n03 Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A	Original	5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent	PDF
MB4213 Abstract: F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD Text: Table of Contents Index 5 SMD Transistors Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal Darlington Transistors	Original	SSIP-12 KIA6283K KIA7217AP SSIP-10 KIA6240K KIA6801K KIA6901P/F MB4213 F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD	PDF
KTD525 Abstract: KTB595 Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL D A T A KTD525 TRIPLE DIFFUSED NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES • Low Collector Saturation Voltage :VcE sat =2.0V(Max.). • Complementary to KTB595. MILLIMETERS MAXIMUM RATINGS (Ta=25°C)	OCR Scan	KTD525 KTB595. 220AB KTD525 KTB595	PDF
KTB595 Abstract: KTD525 Text: SEMICONDUCTOR TECHNICAL DATA KTD525 TRIPLE DIFFUSED NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES P • Low Collector Saturation Voltage :VcE<sat =2.0V Max.). • Complementary to KTB595. K I h DIM MILLIMETERS 10.30 MAX 15.30 MAX 0.80 03.60+0.20 MAXIMUM RATINGS (Ta=25°C)	OCR Scan	KTD525 KTB595. 220AB KTB595 KTD525	PDF
KTB595 Abstract: KTD525 Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTB595 TRIPLE DIFFUSED PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES • High Breakdown Voltage : V ceo=_100V. • Low Collector-Emitter Saturation Voltage. : VCE sat =_2.0V(Max.) • Complementary to KTD525.	OCR Scan	KTB595 KTD525. 220AB KTB595 KTD525	PDF
KTB595 Abstract: KTD525 Text: SEMICONDUCTOR TECHNICAL DATA KTB595 TRIPLE DIFFUSED PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES • High Breakdown Voltage : V ceo=_100V. • Low Collector-Emitter Saturation Voltage. : VcE sat -_2.0V(Max.) • Complementary to KTD525. DIM M ILLIMETERS	OCR Scan	KTB595 KTD525. KTB595 KTD525	PDF
2SC3875S Abstract: BC547 BC546 2Sc4370a 2SC3227 2sa1274 2SA1267 2SC3201 BC557 bc556 2sa1659a bc557 Text: This Transistors Electrical Characteristics T a=25°C Applications VCEO fT (TYP) MIN (TYP) MAX VCE f ratnage Its Respective (mA) (mW) (V) (mA) (MHz) (V) (dB) (V) (KHz) 50 150 150 70^700 6 2 0.25 100 10 80 10 1 10 6 0.1 1 10 SOT-23 H 2SA1269 120 100 200	OCR Scan	Ta-25 2SC3875S 2SA1S04S OT-23 2SC3201 2SA1269 O-92M 2SC3199 2SA1267 BC547 BC546 2Sc4370a 2SC3227 2sa1274 BC557 bc556 2sa1659a bc557	PDF
2SC4370A Abstract: 2SC3875S 2SA1504S 2SC3227 BC548 ,BC558 2SA1267 bc557 2SA1504 BC337/BC327 2SC3202 Text: 1 Transistors Maximum Ratings KOREA Electrical Characteristics Ta—25°C Type No NPN PNP Ic Pc (V) (mA) (mW) 150 I’fe MAX ^CE (V) Ic (mA) (V) 7 0^700 6 2 0.25 100 fT I« (mA) (MHz) (TYP) MIN ^CE (V) NF IC (mA) (TYP) MAX (dB) VCE (V) •c (mA) f (KHz)	OCR Scan	2SC387SS 2SA1S04S OT-23 2SC3201 2SA1269 O-92M 2SC3199 2SA1267 2SC3198A 2SC4370A 2SC3875S 2SA1504S 2SC3227 BC548 ,BC558 bc557 2SA1504 BC337/BC327 2SC3202	PDF
2SC3133 cross reference Abstract: Hitachi 2sc281 NEC D882 A564A D1163A 2sC1815 cross reference a628a krc1211 KRA2203 NEC D288 Text: CROSS REFERENCE GUIDE TRANSISTORS TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG 2N 3903 M O TO RO LA 2N 3903 2SA1052 KSA812 2SA1298 T O S H IB A KSA1298 2N 3904 M O TO RO LA 2N 3904 2SA1072A FUJITSU KSA1050 2SA1299 M ITS UB ISH I KSA1174 2N 3905	OCR Scan	2N4401 2N5401 2N5551 2SA1004 2SA1010 2SA1013 2SA1015 2SA1016 2SA1017 2SA1019 2SC3133 cross reference Hitachi 2sc281 NEC D882 A564A D1163A 2sC1815 cross reference a628a krc1211 KRA2203 NEC D288	PDF