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    KW MHZ TRANSISTOR MODULE Search Results

    KW MHZ TRANSISTOR MODULE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG250YD2YMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 2200 V, 250 A, 2-153A1A Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1ZMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation

    KW MHZ TRANSISTOR MODULE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    5.1 ch amplifier circuit diagram

    Abstract: kw MHz transistor module motorola catv
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line Gallium Arsenide CATV Integrated Amplifier Module MMG1001R2 Features • • • • • • Specified for 79-, 112- and 132-Channel Loading Excellent Distortion Performance Built-in Input Diode Protection


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    132-Channel MMG1001R2 79-Channel MMG1001R2 5.1 ch amplifier circuit diagram kw MHz transistor module motorola catv PDF

    zener diode marking R11

    Abstract: 5.1 ch amplifier circuit diagram ZENER MARKING r12 "Amplifier Modules" 5.1 v zener RG4 DIODE jedec 0603
    Text: Freescale Semiconductor Technical Data Rev. 4, 1/2005 Gallium Arsenide CATV Integrated Amplifier Module Features • Specified for 79 - , 112 - and 132 - Channel Loading • Excellent Distortion Performance • Built - in Input Diode Protection • GaAs FET Transistor Technology


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    MMG1001R2 MMG1001T1 zener diode marking R11 5.1 ch amplifier circuit diagram ZENER MARKING r12 "Amplifier Modules" 5.1 v zener RG4 DIODE jedec 0603 PDF

    5.1 ch amplifier circuit diagram

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line Gallium Arsenide CATV Integrated Amplifier Module MMG2001R2 Features • • • • • • • Specified for 79-, 112- and 132-Channel Loading Excellent Distortion Performance Higher Output Capability Built-in Input Diode Protection


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    132-Channel MMG2001R2 MMG2001R2 5.1 ch amplifier circuit diagram PDF

    zener motorola

    Abstract: 5.1 v zener 1.5k27a CTB112 CTB132 MMG1001R2 XMD112 XMD132 zener 1206 5.1 v C12PIN
    Text: MOTOROLA Order this document by MMG1001R2/D SEMICONDUCTOR TECHNICAL DATA The RF Line Gallium Arsenide CATV Integrated Amplifier Module MMG1001R2 Features • • • • • • Specified for 79 - , 112 - and 132 - Channel Loading Excellent Distortion Performance


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    MMG1001R2/D MMG1001R2 zener motorola 5.1 v zener 1.5k27a CTB112 CTB132 MMG1001R2 XMD112 XMD132 zener 1206 5.1 v C12PIN PDF

    1.5k27a

    Abstract: 5.1 v zener 77PC016E061
    Text: MOTOROLA Order this document by MMG1001R2/D SEMICONDUCTOR TECHNICAL DATA The RF Line Gallium Arsenide CATV Integrated Amplifier Module MMG1001R2 Features • • • • • • Specified for 79 - , 112 - and 132 - Channel Loading Excellent Distortion Performance


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    MMG1001R2/D MMG1001R2 MMG1001R2 1.5k27a 5.1 v zener 77PC016E061 PDF

    zener diode marking R11

    Abstract: ZENER MARKING r12 jedec 0603 5.1 v zener 2512 470 5.1 ch amplifier circuit diagram
    Text: Freescale Semiconductor Technical Data Document Number: MMG1001NT1 Rev. 6, 7/2005 Gallium Arsenide CATV Integrated Amplifier Module Features • Specified for 79 - , 112 - and 132 - Channel Loading • Excellent Distortion Performance • Built - in Input Diode Protection


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    MMG1001NT1 MMG1001T1 MMG1001NT1 zener diode marking R11 ZENER MARKING r12 jedec 0603 5.1 v zener 2512 470 5.1 ch amplifier circuit diagram PDF

    5.1 ch amplifier circuit diagram

    Abstract: ZENER MARKING r12
    Text: Freescale Semiconductor Technical Data MMG1001 Rev. 4, 1/2005 Gallium Arsenide CATV Integrated Amplifier Module Features • Specified for 79−, 112− and 132−Channel Loading • Excellent Distortion Performance • Built−in Input Diode Protection • GaAs FET Transistor Technology


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    MMG1001 132-Channel MMG1001R2 MMG1001T1 5.1 ch amplifier circuit diagram ZENER MARKING r12 PDF

    1.5k27a

    Abstract: FET TO 220 MOT E 5.1 v zener CTB112 CTB132 MMG1001R2 XMD112 XMD132
    Text: Freescale Semiconductor, Inc. MOTOROLA Order this document by MMG1001R2/D SEMICONDUCTOR TECHNICAL DATA The RF Line Gallium Arsenide CATV Integrated Amplifier Module MMG1001R2 Features • • • • • • Specified for 79 - , 112 - and 132 - Channel Loading


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    MMG1001R2/D MMG1001R2 1.5k27a FET TO 220 MOT E 5.1 v zener CTB112 CTB132 MMG1001R2 XMD112 XMD132 PDF

    Motorola RG4 DIODE

    Abstract: A2MC
    Text: MOTOROLA Order this document by MMG1001R2/D SEMICONDUCTOR TECHNICAL DATA The RF Line Gallium Arsenide CATV Integrated Amplifier Module MMG1001R2 Features • • • • • • Specified for 79–, 112– and 132–Channel Loading Excellent Distortion Performance


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    MMG1001R2/D MMG1001R2 MMG1001R2 Motorola RG4 DIODE A2MC PDF

    motorola diode r14

    Abstract: resistor 0603 100 5.1 ch amplifier circuit diagram RS1611 CTB112 CTB132 MMG1001R2 XMD112 XMD132 motorola 4 mhz 52 pin
    Text: MOTOROLA Order this document by MMG1001R2/D SEMICONDUCTOR TECHNICAL DATA The RF Line Gallium Arsenide CATV Integrated Amplifier Module MMG1001R2 Features • • • • • • Specified for 79–, 112– and 132–Channel Loading Excellent Distortion Performance


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    MMG1001R2/D MMG1001R2 motorola diode r14 resistor 0603 100 5.1 ch amplifier circuit diagram RS1611 CTB112 CTB132 MMG1001R2 XMD112 XMD132 motorola 4 mhz 52 pin PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMG1001NT1 Rev. 6, 7/2005 Gallium Arsenide CATV Integrated Amplifier Module Features • Specified for 79 - , 112 - and 132 - Channel Loading • Excellent Distortion Performance • Built - in Input Diode Protection


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    MMG1001NT1 MMG1001T1 MMG1001NT1 PDF

    crcw06031000fkta

    Abstract: CRCW06035600FKTA ZENER MARKING r12 A113 CTB112 CTB132 MMG1001NT1 XMD112 XMD132 5.1 v zener
    Text: Freescale Semiconductor Technical Data Document Number: MMG1001NT1 Rev. 8, 3/2007 Gallium Arsenide CATV Integrated Amplifier Module Features • Specified for 79 - , 112 - and 132 - Channel Loading • Excellent Distortion Performance • Built - in Input Diode Protection


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    MMG1001NT1 DataMMG1001NT1 crcw06031000fkta CRCW06035600FKTA ZENER MARKING r12 A113 CTB112 CTB132 MMG1001NT1 XMD112 XMD132 5.1 v zener PDF

    crcw06031000fkta

    Abstract: CRCW06031200FKTA CRCW06030000FKTA CRCW06032001FKTA GaAs FET chip A113 CTB112 CTB132 MMG1001NT1 XMD112
    Text: Freescale Semiconductor Technical Data Gallium Arsenide CATV Integrated Amplifier Module LIFETIME BUY Features • Specified for 79 - , 112 - and 132 - Channel Loading • Excellent Distortion Performance • Built - in Input Diode Protection • GaAs FET Transistor Technology


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    MMG1001NT1 crcw06031000fkta CRCW06031200FKTA CRCW06030000FKTA CRCW06032001FKTA GaAs FET chip A113 CTB112 CTB132 MMG1001NT1 XMD112 PDF

    zener diode marking R11

    Abstract: A113 CTB112 CTB132 MMG1001NT1 XMD112 XMD132
    Text: Freescale Semiconductor Technical Data Document Number: MMG1001NT1 Rev. 7, 10/2006 Gallium Arsenide CATV Integrated Amplifier Module Features • Specified for 79 - , 112 - and 132 - Channel Loading • Excellent Distortion Performance • Built - in Input Diode Protection


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    MMG1001NT1 zener diode marking R11 A113 CTB112 CTB132 MMG1001NT1 XMD112 XMD132 PDF

    F600R12

    Abstract: No abstract text available
    Text: Technische Inform ation/Technical Information IGBT-Module IGBT-Modules FF 600 R 12 KL4C vorläufige Daten preliminary data Höchstzulässige W erte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FF 400 R 12 KL4C vorläufige Daten preliminary data Höchstzulässige W erte / Maximum rated values Kollektor-Emitter-Sperrspannung collector-emitter voltage p O C O Il o I- p LO C\J II


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    FF400R PDF

    Untitled

    Abstract: No abstract text available
    Text: GP600DHB16S M ITEL Powerline N-Channel IGBT Module S E M IC O N D U C T O R Supersedes March 1997 version, DS4335 - 5.6 DS4335 - 5.7 December 1998 TYPICAL KEY PARAMETERS VCES 1600V V C E sat , 3.5V 'q c o N T , 600A ' c (PK, 1200A APPLICATIONS • High Pow er Sw itching.


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    GP600DHB16S DS4335 PDF

    Untitled

    Abstract: No abstract text available
    Text: GP1200FSS16S M ITEL Powerline N-Channel IGBT Module SEMICONDUCTOR Supersedes March 1998 version, DS4336 - 5.9 DS4336 - 6.0 December 1998 TYPICAL KEY PARAMETERS VCES 1600V V CE sat , 3.5V APPLICATIONS • High Pow er Sw itching. ■ M otor C ontrol. ■


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    GP1200FSS16S DS4336 PDF

    Untitled

    Abstract: No abstract text available
    Text: @ M ITEL GP400LSS16S Powerline N-Channel IGBT Module SEMICONDUCTOR Advance Inform ation DS4987 - 1.3 The GP400LSS16S is a single switch 1600V, robust n channel en han cem ent m ode insulated gate b ipolar transistor IGBT module. Designed for low power loss, the


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    GP400LSS16S DS4987 GP400LSS16S PDF

    half bridge circuit diagram

    Abstract: lc 6231 ge traction motor 12v dc to 220a cv inverter circuits diagrams GP200MHB12S UPS circuit diagram
    Text: @ MITEL GP200MHB12S Powerline N-Channel IGBT Module SEMICONDUCTOR Advance Inform ation Supersedes July 1996 version, DS4339 - 4.2 The GP200MHB12S is a single switch 1200V, robust n channel en han cem ent m ode insulated gate b ipolar transistor IGBT module. Designed for low power loss, the


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    GP200MHB12S DS4339 GP200MHB12S half bridge circuit diagram lc 6231 ge traction motor 12v dc to 220a cv inverter circuits diagrams UPS circuit diagram PDF

    1200ap

    Abstract: kw MHz transistor module GEC 41 GP600DHB16S lc 6231 GEC Plessey Semiconductors DS433
    Text: S i GEC PL E S SE Y NOVEM BER 1997 SEMI CO NDUC TOR S ADVANCE INFORMATION DS4335-5.5 GP600DHB16S POWERLINE N-CHANNEL IGBT MODULE TYPICAL KEY PARAMETERS VCES 1600V V C E ,sat, 3.5V APPLICATIONS • High Power Switching. ■ Motor Control. ^ C O N T ■ UPS.


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    DS4335-5 GP600DHB16S 1200ap kw MHz transistor module GEC 41 GP600DHB16S lc 6231 GEC Plessey Semiconductors DS433 PDF

    GP600FHB16S

    Abstract: No abstract text available
    Text: GP600FHB16S M ITEL Powerline N-Channel IGBT Module SEMICONDUCTOR Supersedes March 1998 version, DS4545 - 2.6 DS4545 - 2.7 December 1998 TYPICAL KEY PARAMETERS VCES 1600V V C E sat , 3.5V 'q c o N T , 600A ' c (PK, 1200A APPLICATIONS • High Pow er Sw itching.


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    GP600FHB16S DS4545 GP600FHB16S PDF

    DS493

    Abstract: No abstract text available
    Text: GP800DHB12T M ITEL S E M IC O N D U C T O R Powerline N-Channel IGBT Module Advance Inform ation Supesedes August 1998, version DS4931-2.0 T he G P 800D H B 12T is a dual sw itch 1200V, robust n c h a n n e l e n h a n c e m e n t m o d e in s u la te d g a te b ip o la r


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    GP800DHB12T DS4931-3 DS4931-2 1600g DS493 PDF

    Untitled

    Abstract: No abstract text available
    Text: S i GEC P L ES SE Y NOVEMBERS SEMI CO NDUC TOR S ADVANCE INFORMATION DS4335-5.5 GP600DHB16S POWERLINE N-CHANNEL IGBT MODULE TYPICAL KEY PARAMETERS VCES 1600V V CE,sat, 3.5V APPLICATIONS • High Power Switching. ■ Motor Control. ^ C O N T ■ UPS. 6 0 0 A


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    DS4335-5 GP600DHB16S PDF