Untitled
Abstract: No abstract text available
Text: JULY 1996 GP200MHB12S ADVANCE ENGINEERING DATA DS4339-4.2 GP200MHB12S POWERLINE N-CHANNEL IGBT MODULE APPLICATIONS TYPICAL KEY PARAMETERS 1200V VCES 2.8V VCE sat 200A IC(CONT) 400A IC(PK) 190ns tr 840ns tf • High Power Switching. ■ Motor Control. ■ UPS.
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GP200MHB12S
DS4339-4
190ns
840ns
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AN5190
Abstract: AN4502 GP200MHB12S GP200MHS12 AN4503 AN4508
Text: GP200MHS12 GP200MHS12 Half Bridge IGBT Module Replaces GP200MHB12S January 1999 version, DS4339-5.5 FEATURES • Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction DS5296-1.5 November 2000 KEY PARAMETERS VCES typ
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GP200MHS12
GP200MHB12S
DS4339-5
DS5296-1
GP200MHS12
AN5190
AN4502
AN4503
AN4508
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half bridge circuit diagram
Abstract: lc 6231 ge traction motor 12v dc to 220a cv inverter circuits diagrams GP200MHB12S UPS circuit diagram
Text: @ MITEL GP200MHB12S Powerline N-Channel IGBT Module SEMICONDUCTOR Advance Inform ation Supersedes July 1996 version, DS4339 - 4.2 The GP200MHB12S is a single switch 1200V, robust n channel en han cem ent m ode insulated gate b ipolar transistor IGBT module. Designed for low power loss, the
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OCR Scan
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GP200MHB12S
DS4339
GP200MHB12S
half bridge circuit diagram
lc 6231
ge traction motor
12v dc to 220a cv inverter circuits diagrams
UPS circuit diagram
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PDF
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Untitled
Abstract: No abstract text available
Text: GEC PLESS EY S E M I C O N D U C T O R S DS4339-4.2 GP200MHB12S POWERUNE N-CHANNELIGBT MODULE APPLICATIONS • High Power Switching. ■ Motor Control. ■ UPS. ■ AC And DC Servo Drive Amplifiers. TYPICAL KEY PARAMETERS v CES 1200V V* CE sat 2.8V 200A S conti
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OCR Scan
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DS4339-4
GP200MHB12S
190ns
840ns
44lbs
70lbs
88lbs
18lbs
1500g
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PDF
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