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    SKF Cooper ATL50M (ALTERNATE: COP.ATL50M)

    Cooper Seals, Bore Dia. 50 mm | Cooper Bearings (SKF) ATL50M
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    RS ATL50M (ALTERNATE: COP.ATL50M) Bulk 1 Weeks 1
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    L50MA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    quad N-Channel MOSFET dip package

    Abstract: No abstract text available
    Text: SHORT FORM CATALOG ADVANCED LINEAR DEVICES, INC. precision analog semiconductors Nano-Power • Standard & Unique Functions • User-Specified Options Small Signal MOSFET Arrays Operational Amplifiers EPAD Voltage Comparators Analog Switches CMOS Analog Timers


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    IRS540

    Abstract: MP 3389 IEI-1213 IRS540-1 RL 782 relay 1202 smd diode ic337 IEI-1207 RADEOn equlpment transistor
    Text: DESCRIPTION The~rPAl6MlIcMor~allthicN-channel power in 8 circult# and Gate Protection Dio4e Thermal ryQ skI;l 4ffay )If#krrffl c@sigl)tlg [HI fb\#. f%#~v Head, and 8~ on. FEATURES Direct driving is poooible by standarq (4 V driving II) possible) * Output voltage: Vo = 30 V MAX.


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    5953-0406E

    Abstract: IC 7414 not gate with schmitt trigger OPTOCOUPLER 3700 optocoupler with schmitt trigger input optocoupler PC 187 HCPL-3700 Application note 1004 HCPL-3700 IC 7414 datasheet working of ic 7414 MC6821
    Text: Threshold Sensing for Industrial Control Systems with the HCPL-3700 Interface Optocoupler Application Note 1004 Introduction The use of electronic logic circuitry in most applications outside of a controlled environment very quickly brings the design engineer into contact with the problems


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    PDF HCPL-3700 HCPL-3700 5953-0406E IC 7414 not gate with schmitt trigger OPTOCOUPLER 3700 optocoupler with schmitt trigger input optocoupler PC 187 HCPL-3700 Application note 1004 IC 7414 datasheet working of ic 7414 MC6821

    MPQ2222

    Abstract: transistor 650 MPQ2221
    Text: CENTRAL SEMICONDUCTOR TE D e | Ie]fl‘nt, 3 0DDD3tM S l-r-Ha-as- DESCRIPTION The CENTRAL SEMICONDUCTOR M P Q 2 2 2 1 , MPQ2222 types are comprised of four independ ent S iIi con NPN Transistors mounted in a 14 PIN DIP, designed for general purpose amplifier and switching appl¡cations.


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    PDF 43TQ5" MPQ2221 MPQ2222 O-116 MPQ2221, MPQ2222 150mA, 300mA, transistor 650

    h33 diode

    Abstract: No abstract text available
    Text: MIVR 42095 mn NEGATIVE HIGH TEMPERATURE REGULATOR Designed for use in high temperature environments FEATURES • Output current to 1.5 amps • Input voltage to -30V • Internal short circuit protection, foldbackand current limiting • StorageTemperature +250°C


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    PDF 22-PIN h33 diode

    2SC2194

    Abstract: No abstract text available
    Text: ~si TOSHIBA { D I S C R E T E / O P T 0> 9097250 TOSHIBA deI^oivsso 00072m 0 56C <D ISCRETE/O PTO 0 72 4 -L ~l n SILICON PNP EPITAXIAL TYPE PCT PROCESS) Unit in mm POWER AMPLIFIER APPLICATIONS. &9MAX. 03.g±O.2 FEATURES : . Suitable for TV Sound•Output, Vert. Deflection


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    PDF 00072m 2SC2194A. 2SC2194

    m1305 transistor

    Abstract: w431 MRF1421C Diode LT 4104 NJT1946A 7082a NJT1949 magnetron 2j42 MSF1422B magnetron 5kw
    Text: INTEGRATED CIRCUITS BIPOLAR OPERATIONAL AMPLIFIER TY PE s I N G ¥ D U A L Q u A D H E X D E S C R IP T IO N NJMOP-07 NJM318 NJM741 NJM2107F NJM2130 NJM425# NJM5534 NJM 022 N JM 022B NJM 062 N JM 072B N JM 082B NJM353 NJM1458 NJM2041 NJM2043 NJM2068 NJM2082


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    PDF NJMOP-07 NJM318 NJM741 NJM2107F NJM2130 NJM425# NJM5534 NJM353 NJM1458 NJM2041 m1305 transistor w431 MRF1421C Diode LT 4104 NJT1946A 7082a NJT1949 magnetron 2j42 MSF1422B magnetron 5kw

    2N2907

    Abstract: PN2907 PN2907A J 2N2907 2N2222 2N2222A 2N2907A PN2222 PN2222A PNP pN2907
    Text: CASE TO-18 CASE T0-92A CBE EBC 2N2907 2N2907A PN2907 PN2907A THE 2N2907, 2N2907A, PN2907, PN2907A ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE NPN TYPE 2N2222,


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    PDF 2N2907A PN2907A 2N2907, 2N2907A, PN2907, 2N2222, 2N2222A, PN2222, PN2222A 2N2907 PN2907 J 2N2907 2N2222 2N2222A PN2222 PNP pN2907

    LA5525

    Abstract: No abstract text available
    Text: nfinnííuraWYi'íTíüt nn n/c • îfe^ ûSEJ¥?2Çi*æ < »^ O S'3ï¥lfi 'm # < 3V 2 * 5U03 a :g HS-daS ■OANVS s a =»QN5 ! î : iOOA - z D O h -. X esn su uiOJf linsßj AO LU i^!i|M sbdjbú pjuji *o SI | u J&UlO jo $ju& . jed jo siusLueftuiJ^ui Awe jgj iog '-osn su jo j O à N V S


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    PDF LA5525- 100mA 200itiA 20-50mAâ 17Q-200raA 100mA Im-50mA l50mA 50-l50) 200mA LA5525

    Untitled

    Abstract: No abstract text available
    Text: T D 6 2 3 0 1 P , T flß O Q flO D BIPOLAR DIGITAL INTEGRATED C IR C U IT S ILICO N M O NO LITHIC IU D ¿ O U ¿ r TD62301P LOW SATURATION DRIVER TD62302P LOW SATURATION DRIVER Features • L ow S a turation Outputs • Output Rating • Output V^j; sat =0. 7V Max


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    PDF TD62301P TD62302P l50mA 5V/200mA TD62301P, TD62302P

    2SC642

    Abstract: 2sc642A 2SC643A YS 150 003 b AC42C VC30 TRANSISTOR OSF
    Text: SILICON NPN TR IP L E D IFFU SE D MESA TRANSISTOR O ° * y — t ~^ tü tin Unit in mm PR 02S.OUAX. Color TV Vertical Output Applications 021.0 MAX • ttH Ü tŒ T-i- ; • V CB O = H 0 0 V 3 S C 6 4 2 = 1500V (2SC643A) v d K ( s u e ) = ,7 0 0 V ( 2 S C 6 4 2 )


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    PDF 3SC642 2SC643A 2SC642 2SC642A 2SC64Ä 2-21B1A 2SC642 l50mA 2sc642A 2SC643A YS 150 003 b AC42C VC30 TRANSISTOR OSF

    EIAJ C-3

    Abstract: No abstract text available
    Text: TO KO Inc TK716xx Production Standard Note TK716xxSCLH Table of Contents 1 . S tru c tu re /F e a tu re 2 . Electrical C haracteristics Specification 3 . Pin layout 4 . Test Circuit 5 . Block Diagram 6 . Definition of Terms 7. 8. 9. 1 0. 1 1. In p u t O utput Capacitor


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    PDF TK716xx TK716xxSCLH DB4-L005 EIAJ C-3

    54527p

    Abstract: M54527
    Text: M I T S U B I S H I B IP O L A R D IG I T A L ICs M54527P 6 -U N IT 150mA DARLINGTON TR A N S ISTO R ARRAY W IT H C L A M P DIODE DESCRIPTION The M54527P, 6-channel sink driver, consists of 12 NPN tran­ sistors connected to form high current gain driver pairs.


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    PDF M54527P 150mA M54527P, --40V 54527p M54527

    2N5583

    Abstract: CM5583 pnp rf transistor ic lg 631 LG 631 IC
    Text: Data Sheet CM5583 Central" PNP HIGH FREQUENCY SILICON TRANSISTOR Sem iconductor Corp. 145 Adam s Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-39 CASE Manufacturers of W orld C lass Discrete Semiconductors DESCRIPTION


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    PDF CM5583 CM5583 2N5583. 100kHz 150mA 2N5583 pnp rf transistor ic lg 631 LG 631 IC

    2N5107

    Abstract: 2N3109 2N3107 2N3108 2N3110 IN3600 2N4030 2N4032
    Text: 2N3107 th ro u g h 2N3110 NPN SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES I :r's : < yy ji - . v; >> r CASE TO-39 THE 2N3107 THROUGH 2N3110 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR AF MEDIUM POWER DRIVERS AND OUTPUTS, AS WELL AS FOR SWITCHING APPLICATIONS


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    PDF 2N3107 2N3110 2N4032, 2N4030. 2N3109 800mW 2N5107 2N3108 IN3600 2N4030 2N4032

    Untitled

    Abstract: No abstract text available
    Text: LH1085 SIEMENS High*Voltage Solid State Relay FEA TU R ES DESCRIPTION • • • • • The LH1085 High-Voltage, Solid State Relay is a single pole, normally open switch 1 Form A that can replace electromechan­ ical relays in many applications. The relay features logic-level input


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    PDF LH1085 LH1085 l50mA, LH1085AT1/AAB1 6G-78

    VCAQ

    Abstract: BSY88 0058C
    Text: GENERAL DESCRIPTION : The BSY88 i s a NPN s i l i c o n 4 plan ar e p ita x ia l t r a n s is t o r . I t f e a t u r e s h i g h breakdow n and low s a t u r a t i o n v o l t a g e . I t is in te n d e d f o r medium power a m p l i f i e r d r i v e r s t a g e and g e n e r a l p u rp o se


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    PDF BSY88 VCB-75V 150mA l50mA I150mA 500mA 50MHz 15KHz VCAQ 0058C

    Untitled

    Abstract: No abstract text available
    Text: MECHANICAL OUTLINE GENERAL DESCRIPTION : The BSY88 is a NPN s i l i c o n ' p la n a r e p i t a x i a l t r a n s i s t o r . I t f e a tu r e s h ig h breakdown and low s a t u r a t i o n v o l t a g e . I t is in te n d e d f o r medium power a m p lif ie r


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    PDF BSY88 15KHZ

    SY 356/2

    Abstract: la 4292 wi85 glj 504 TL 494 CN 400H TK716XX
    Text: IC DATA SH EET TK716XXS • p J Ig T 'fo y & n m z m à te n -x, o s t . • ììiij o n / o f f= I > h P - ;l/ # è • S S S fK Ü d * « Œ High/on t t . O fïfë À * ! « » $ $ / > (pA K W T t . (± 1 % or +40m V) # *P f i (± 2 % or ±60m V ) • ' J > Ü ^ A t t i t > M E E £ , PN P /<! 7 - h 5 > ÿ 7 ÿ - r t l ,


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    PDF TK716XXS 50mAl$ 200mA TK716XX 20mV/Div -30mA 20mV/Div TK716XX GC3-E009 SY 356/2 la 4292 wi85 glj 504 TL 494 CN 400H

    LA5522

    Abstract: SANYO LA5522 LA5521D lopg T370 5522 LA552
    Text: L A 5 5 2 1 D Mac 1 9 5 6 > Ì ; . , 5 5 2 2 5 165 ✓ 303IA f ô î E E E D C i — " X . N / dg ^ ^ o is /s a ^ -r s f y £ « * & • « £ DC í - í S r ^ i E ^ j W C T f t ^ r ^ * * : ?M,7t 11 Slíáa I.8— < 'J ^ öv. //^ 7 r - '> ^ f : ^ ) S ^ I S S i t a ^ Ä L r i i D


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    PDF LA5521D IO67A LA552 LA5522) LA5522 LA552 303IA-S5TR A5522 LA5522 SANYO LA5522 lopg T370 5522

    7L Marking

    Abstract: No abstract text available
    Text: LT1579 300mA Dual Input Smart Battery Backup Regulator F€flTUR€S D€SCRIPTIOfl • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT 1579 is a dual input, single output, low dropout regulator. This device is designed to provide an uninterruptible output voltagefrom two independent input


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    PDF LT1579 300mA 50piA 24-Lead 7L Marking

    BSY88

    Abstract: v30010
    Text: GENERAL DESCRIPTION : The BSY88 i s a NPN s i l i c o n ' p lan ar e p ita x ia l t r a n s i s t o r . I t f e a t u r e s h i g h breakd ow n and low s a t u r a t i o n v o l t a g e . I t is in te n d e d f o r medium pow er a m p l i f i e r d r i v e r s t a g e and g e n e r a l p u rp o se


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    PDF BSY88 BSY88 150mA 500mA 50MHz 15KHz v30010

    2930l

    Abstract: NJM2930 NJM2930F NJM2930L NJM2930L05 C210A
    Text: NJM2930 A iti t ¡ Ix % =L \ S - ? m NJM2930 li3 íf f i'íIE liig f f l J lii[ H ï& ’T'Î> U m tt „ W i ^ A ^ O T t t A i r i g i E 150mA, 2 9 3 0 L T ÌÌ 100mA T O . 6 V W T 1 1' T O -2 2 0 F Ò ít ílí S Æ L T f c U í f o É * (7 ) 3 ^ I E 1 i S f f l ^ W


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    PDF NJM2930 NJM2S30là 7W930T 150mA, 2930LTà 6VWT11^ O-220F) 2930F( 150mA) 2930L NJM2930 NJM2930F NJM2930L NJM2930L05 C210A

    CDC2509

    Abstract: No abstract text available
    Text: Preliminary KMM378S1723T SDRAM MODULE KMM378S1723T 16Mx72 SDRAM DIMM with PLL & Register based on 16Mx8, 4Banks, 4K Ref. 3.3V Synch. DRAMs GENERAL DESCRIPTION FEATURE The Samsung KMM378S1723T is a 16M bit x 72 Synchronous • Performance range Dynamic RAM high density memory module. The Samsung


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    PDF KMM378S1723T 16Mx72 16Mx8, KMM378S1723T KMM378S1723T-G8 KMM378S1723T-GH KMM378S1723T-GL KMM378S1723T-G0 CDC2509