quad N-Channel MOSFET dip package
Abstract: No abstract text available
Text: SHORT FORM CATALOG ADVANCED LINEAR DEVICES, INC. precision analog semiconductors Nano-Power • Standard & Unique Functions • User-Specified Options Small Signal MOSFET Arrays Operational Amplifiers EPAD Voltage Comparators Analog Switches CMOS Analog Timers
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IRS540
Abstract: MP 3389 IEI-1213 IRS540-1 RL 782 relay 1202 smd diode ic337 IEI-1207 RADEOn equlpment transistor
Text: DESCRIPTION The~rPAl6MlIcMor~allthicN-channel power in 8 circult# and Gate Protection Dio4e Thermal ryQ skI;l 4ffay )If#krrffl c@sigl)tlg [HI fb\#. f%#~v Head, and 8~ on. FEATURES Direct driving is poooible by standarq (4 V driving II) possible) * Output voltage: Vo = 30 V MAX.
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5953-0406E
Abstract: IC 7414 not gate with schmitt trigger OPTOCOUPLER 3700 optocoupler with schmitt trigger input optocoupler PC 187 HCPL-3700 Application note 1004 HCPL-3700 IC 7414 datasheet working of ic 7414 MC6821
Text: Threshold Sensing for Industrial Control Systems with the HCPL-3700 Interface Optocoupler Application Note 1004 Introduction The use of electronic logic circuitry in most applications outside of a controlled environment very quickly brings the design engineer into contact with the problems
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HCPL-3700
HCPL-3700
5953-0406E
IC 7414 not gate with schmitt trigger
OPTOCOUPLER 3700
optocoupler with schmitt trigger input
optocoupler PC 187
HCPL-3700 Application note 1004
IC 7414 datasheet
working of ic 7414
MC6821
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MPQ2222
Abstract: transistor 650 MPQ2221
Text: CENTRAL SEMICONDUCTOR TE D e | Ie]fl‘nt, 3 0DDD3tM S l-r-Ha-as- DESCRIPTION The CENTRAL SEMICONDUCTOR M P Q 2 2 2 1 , MPQ2222 types are comprised of four independ ent S iIi con NPN Transistors mounted in a 14 PIN DIP, designed for general purpose amplifier and switching appl¡cations.
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43TQ5"
MPQ2221
MPQ2222
O-116
MPQ2221,
MPQ2222
150mA,
300mA,
transistor 650
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h33 diode
Abstract: No abstract text available
Text: MIVR 42095 mn NEGATIVE HIGH TEMPERATURE REGULATOR Designed for use in high temperature environments FEATURES • Output current to 1.5 amps • Input voltage to -30V • Internal short circuit protection, foldbackand current limiting • StorageTemperature +250°C
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22-PIN
h33 diode
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2SC2194
Abstract: No abstract text available
Text: ~si TOSHIBA { D I S C R E T E / O P T 0> 9097250 TOSHIBA deI^oivsso 00072m 0 56C <D ISCRETE/O PTO 0 72 4 -L ~l n SILICON PNP EPITAXIAL TYPE PCT PROCESS) Unit in mm POWER AMPLIFIER APPLICATIONS. &9MAX. 03.g±O.2 FEATURES : . Suitable for TV Sound•Output, Vert. Deflection
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00072m
2SC2194A.
2SC2194
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m1305 transistor
Abstract: w431 MRF1421C Diode LT 4104 NJT1946A 7082a NJT1949 magnetron 2j42 MSF1422B magnetron 5kw
Text: INTEGRATED CIRCUITS BIPOLAR OPERATIONAL AMPLIFIER TY PE s I N G ¥ D U A L Q u A D H E X D E S C R IP T IO N NJMOP-07 NJM318 NJM741 NJM2107F NJM2130 NJM425# NJM5534 NJM 022 N JM 022B NJM 062 N JM 072B N JM 082B NJM353 NJM1458 NJM2041 NJM2043 NJM2068 NJM2082
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NJMOP-07
NJM318
NJM741
NJM2107F
NJM2130
NJM425#
NJM5534
NJM353
NJM1458
NJM2041
m1305 transistor
w431
MRF1421C
Diode LT 4104
NJT1946A
7082a
NJT1949
magnetron 2j42
MSF1422B
magnetron 5kw
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2N2907
Abstract: PN2907 PN2907A J 2N2907 2N2222 2N2222A 2N2907A PN2222 PN2222A PNP pN2907
Text: CASE TO-18 CASE T0-92A CBE EBC 2N2907 2N2907A PN2907 PN2907A THE 2N2907, 2N2907A, PN2907, PN2907A ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE NPN TYPE 2N2222,
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2N2907A
PN2907A
2N2907,
2N2907A,
PN2907,
2N2222,
2N2222A,
PN2222,
PN2222A
2N2907
PN2907
J 2N2907
2N2222
2N2222A
PN2222
PNP pN2907
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LA5525
Abstract: No abstract text available
Text: nfinnííuraWYi'íTíüt nn n/c • îfe^ ûSEJ¥?2Çi*æ < »^ O S'3ï¥lfi 'm # < 3V 2 * 5U03 a :g HS-daS ■OANVS s a =»QN5 ! î : iOOA - z D O h -. X esn su uiOJf linsßj AO LU i^!i|M sbdjbú pjuji *o SI | u J&UlO jo $ju& . jed jo siusLueftuiJ^ui Awe jgj iog '-osn su jo j O à N V S
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LA5525-
100mA
200itiA
20-50mAâ
17Q-200raA
100mA
Im-50mA
l50mA
50-l50)
200mA
LA5525
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Untitled
Abstract: No abstract text available
Text: T D 6 2 3 0 1 P , T flß O Q flO D BIPOLAR DIGITAL INTEGRATED C IR C U IT S ILICO N M O NO LITHIC IU D ¿ O U ¿ r TD62301P LOW SATURATION DRIVER TD62302P LOW SATURATION DRIVER Features • L ow S a turation Outputs • Output Rating • Output V^j; sat =0. 7V Max
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TD62301P
TD62302P
l50mA
5V/200mA
TD62301P,
TD62302P
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2SC642
Abstract: 2sc642A 2SC643A YS 150 003 b AC42C VC30 TRANSISTOR OSF
Text: SILICON NPN TR IP L E D IFFU SE D MESA TRANSISTOR O ° * y — t ~^ tü tin Unit in mm PR 02S.OUAX. Color TV Vertical Output Applications 021.0 MAX • ttH Ü tŒ T-i- ; • V CB O = H 0 0 V 3 S C 6 4 2 = 1500V (2SC643A) v d K ( s u e ) = ,7 0 0 V ( 2 S C 6 4 2 )
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3SC642
2SC643A
2SC642
2SC642A
2SC64Ä
2-21B1A
2SC642
l50mA
2sc642A
2SC643A
YS 150 003 b
AC42C
VC30
TRANSISTOR OSF
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EIAJ C-3
Abstract: No abstract text available
Text: TO KO Inc TK716xx Production Standard Note TK716xxSCLH Table of Contents 1 . S tru c tu re /F e a tu re 2 . Electrical C haracteristics Specification 3 . Pin layout 4 . Test Circuit 5 . Block Diagram 6 . Definition of Terms 7. 8. 9. 1 0. 1 1. In p u t O utput Capacitor
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TK716xx
TK716xxSCLH
DB4-L005
EIAJ C-3
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54527p
Abstract: M54527
Text: M I T S U B I S H I B IP O L A R D IG I T A L ICs M54527P 6 -U N IT 150mA DARLINGTON TR A N S ISTO R ARRAY W IT H C L A M P DIODE DESCRIPTION The M54527P, 6-channel sink driver, consists of 12 NPN tran sistors connected to form high current gain driver pairs.
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M54527P
150mA
M54527P,
--40V
54527p
M54527
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2N5583
Abstract: CM5583 pnp rf transistor ic lg 631 LG 631 IC
Text: Data Sheet CM5583 Central" PNP HIGH FREQUENCY SILICON TRANSISTOR Sem iconductor Corp. 145 Adam s Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-39 CASE Manufacturers of W orld C lass Discrete Semiconductors DESCRIPTION
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CM5583
CM5583
2N5583.
100kHz
150mA
2N5583
pnp rf transistor
ic lg 631
LG 631 IC
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2N5107
Abstract: 2N3109 2N3107 2N3108 2N3110 IN3600 2N4030 2N4032
Text: 2N3107 th ro u g h 2N3110 NPN SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES I :r's : < yy ji - . v; >> r CASE TO-39 THE 2N3107 THROUGH 2N3110 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR AF MEDIUM POWER DRIVERS AND OUTPUTS, AS WELL AS FOR SWITCHING APPLICATIONS
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2N3107
2N3110
2N4032,
2N4030.
2N3109
800mW
2N5107
2N3108
IN3600
2N4030
2N4032
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Untitled
Abstract: No abstract text available
Text: LH1085 SIEMENS High*Voltage Solid State Relay FEA TU R ES DESCRIPTION • • • • • The LH1085 High-Voltage, Solid State Relay is a single pole, normally open switch 1 Form A that can replace electromechan ical relays in many applications. The relay features logic-level input
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LH1085
LH1085
l50mA,
LH1085AT1/AAB1
6G-78
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VCAQ
Abstract: BSY88 0058C
Text: GENERAL DESCRIPTION : The BSY88 i s a NPN s i l i c o n 4 plan ar e p ita x ia l t r a n s is t o r . I t f e a t u r e s h i g h breakdow n and low s a t u r a t i o n v o l t a g e . I t is in te n d e d f o r medium power a m p l i f i e r d r i v e r s t a g e and g e n e r a l p u rp o se
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BSY88
VCB-75V
150mA
l50mA
I150mA
500mA
50MHz
15KHz
VCAQ
0058C
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Untitled
Abstract: No abstract text available
Text: MECHANICAL OUTLINE GENERAL DESCRIPTION : The BSY88 is a NPN s i l i c o n ' p la n a r e p i t a x i a l t r a n s i s t o r . I t f e a tu r e s h ig h breakdown and low s a t u r a t i o n v o l t a g e . I t is in te n d e d f o r medium power a m p lif ie r
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BSY88
15KHZ
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SY 356/2
Abstract: la 4292 wi85 glj 504 TL 494 CN 400H TK716XX
Text: IC DATA SH EET TK716XXS • p J Ig T 'fo y & n m z m à te n -x, o s t . • ììiij o n / o f f= I > h P - ;l/ # è • S S S fK Ü d * « Œ High/on t t . O fïfë À * ! « » $ $ / > (pA K W T t . (± 1 % or +40m V) # *P f i (± 2 % or ±60m V ) • ' J > Ü ^ A t t i t > M E E £ , PN P /<! 7 - h 5 > ÿ 7 ÿ - r t l ,
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TK716XXS
50mAl$
200mA
TK716XX
20mV/Div
-30mA
20mV/Div
TK716XX
GC3-E009
SY 356/2
la 4292
wi85
glj 504
TL 494 CN
400H
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LA5522
Abstract: SANYO LA5522 LA5521D lopg T370 5522 LA552
Text: L A 5 5 2 1 D Mac 1 9 5 6 > Ì ; . , 5 5 2 2 5 165 ✓ 303IA f ô î E E E D C i — " X . N / dg ^ ^ o is /s a ^ -r s f y £ « * & • « £ DC í - í S r ^ i E ^ j W C T f t ^ r ^ * * : ?M,7t 11 Slíáa I.8— < 'J ^ öv. //^ 7 r - '> ^ f : ^ ) S ^ I S S i t a ^ Ä L r i i D
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LA5521D
IO67A
LA552
LA5522)
LA5522
LA552
303IA-S5TR
A5522
LA5522
SANYO LA5522
lopg
T370
5522
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7L Marking
Abstract: No abstract text available
Text: LT1579 300mA Dual Input Smart Battery Backup Regulator F€flTUR€S D€SCRIPTIOfl • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT 1579 is a dual input, single output, low dropout regulator. This device is designed to provide an uninterruptible output voltagefrom two independent input
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LT1579
300mA
50piA
24-Lead
7L Marking
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BSY88
Abstract: v30010
Text: GENERAL DESCRIPTION : The BSY88 i s a NPN s i l i c o n ' p lan ar e p ita x ia l t r a n s i s t o r . I t f e a t u r e s h i g h breakd ow n and low s a t u r a t i o n v o l t a g e . I t is in te n d e d f o r medium pow er a m p l i f i e r d r i v e r s t a g e and g e n e r a l p u rp o se
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BSY88
BSY88
150mA
500mA
50MHz
15KHz
v30010
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2930l
Abstract: NJM2930 NJM2930F NJM2930L NJM2930L05 C210A
Text: NJM2930 A iti t ¡ Ix % =L \ S - ? m NJM2930 li3 íf f i'íIE liig f f l J lii[ H ï& ’T'Î> U m tt „ W i ^ A ^ O T t t A i r i g i E 150mA, 2 9 3 0 L T ÌÌ 100mA T O . 6 V W T 1 1' T O -2 2 0 F Ò ít ílí S Æ L T f c U í f o É * (7 ) 3 ^ I E 1 i S f f l ^ W
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NJM2930
NJM2S30lÃ
7W930T
150mA,
2930LTÃ
6VWT11^
O-220F)
2930F(
150mA)
2930L
NJM2930
NJM2930F
NJM2930L
NJM2930L05
C210A
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CDC2509
Abstract: No abstract text available
Text: Preliminary KMM378S1723T SDRAM MODULE KMM378S1723T 16Mx72 SDRAM DIMM with PLL & Register based on 16Mx8, 4Banks, 4K Ref. 3.3V Synch. DRAMs GENERAL DESCRIPTION FEATURE The Samsung KMM378S1723T is a 16M bit x 72 Synchronous • Performance range Dynamic RAM high density memory module. The Samsung
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KMM378S1723T
16Mx72
16Mx8,
KMM378S1723T
KMM378S1723T-G8
KMM378S1723T-GH
KMM378S1723T-GL
KMM378S1723T-G0
CDC2509
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