4-221
Abstract: transistor mosfet n-ch drain current NDS9958 Dual N & P-Channel MOSFET
Text: National Semiconductor" May 1996 NDS9958 Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS
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NDS9958
b501130
0Q400bl
4-221
transistor mosfet n-ch drain current
NDS9958
Dual N & P-Channel MOSFET
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m 861
Abstract: NDB6051 NDP6051 GCMOz 225si T-50113
Text: é> Na t io na I Semiconductor'' M ay 19 96 NDP6051/ NDB6051 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.
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May1996
NDP6051/NDB6051
m 861
NDB6051
NDP6051
GCMOz
225si
T-50113
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2N5088 national
Abstract: 2N5088 2N5210 2N5210 national
Text: 2N5210 D iscrete P O W E R & S ig n a l Technologies National Semiconductor 2N5210 NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose am plifier applications at collector currents from 1pA to 50 mA. Sourced from Process 07. See 2N5088 for characteristics.
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2N5210
2N5088
L5Q1130
2N5088 national
2N5210
2N5210 national
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