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    L75B Search Results

    L75B Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    72T6360L7-5BBI Renesas Electronics Corporation x36 Sequential Flow-Control Device (up to 1GigaBit) Visit Renesas Electronics Corporation
    72V36100L7-5BBI Renesas Electronics Corporation 64K x 36 SuperSync II FIFO, 3.3V Visit Renesas Electronics Corporation
    72V36110L7-5BB Renesas Electronics Corporation 128K x 36 SuperSync II FIFO, 3.3V Visit Renesas Electronics Corporation
    72V51256L7-5BB8 Renesas Electronics Corporation 4Q x36 2M Multi-Queue, 3.3V Visit Renesas Electronics Corporation
    72V51446L7-5BB Renesas Electronics Corporation 16Q x36 1M Multi-Queue, 3.3V Visit Renesas Electronics Corporation
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    L75B Price and Stock

    Renesas Electronics Corporation 72V2113L7-5BC

    IC FIFO SYNC 512KX9 100CABGA
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    DigiKey 72V2113L7-5BC Tray 151 1
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    Avnet Americas 72V2113L7-5BC Tray 18 Weeks 50
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    Mouser Electronics 72V2113L7-5BC
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    Renesas Electronics America 72V2113L7-5BC Tray 151 1
    • 1 $214.19
    • 10 $190.029
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    Renesas Electronics Corporation 72V2113L7-5BCI

    IC FIFO SYNC 512KX9 100CABGA
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    DigiKey 72V2113L7-5BCI Tray 101 1
    • 1 $225.18
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    Avnet Americas 72V2113L7-5BCI Tray 18 Weeks 50
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    Mouser Electronics 72V2113L7-5BCI
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    Avnet Silica 72V2113L7-5BCI 19 Weeks 1
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    Renesas Electronics America 72V2113L7-5BCI Tray 101 1
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    Triplett Corporation CAT7FL-75BK

    FLAT CAT7 SSTP Patch Cable 75' B
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    DigiKey CAT7FL-75BK 12 1
    • 1 $67.09
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    TestEquity LLC CAT7FL-75BK
    • 1 $51.99
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    Renesas Electronics Corporation 72V253L7-5BC

    IC FIFO SYNC 8KX9 5NS 100CABGA
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    DigiKey 72V253L7-5BC Tray 12 1
    • 1 $59.32
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    Renesas Electronics America 72V253L7-5BC Tray 12 1
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    TE Connectivity EXL75BNX

    RF ANT 75MHZ WHIP STR BNX CONN
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    L75B Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    l71b

    Abstract: L73B L74B
    Text: LM2937 www.ti.com SNVS100D – MAY 2004 – REVISED AUGUST 2005 LM2937 500 mA Low Dropout Regulator Check for Samples: LM2937 FEATURES DESCRIPTION 1 • 2 • • • • • • • • Fully Specified for Operation Over −40°C to +125°C Output Current in Excess of 500 mA


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    LM2937 SNVS100D LM2937 l71b L73B L74B PDF

    l71b

    Abstract: l74b LM2937-5 LM2937 LM2937ET-10 LM2937ET-12 LM2937ET-15 LM2937ET-5 LM2937ET-8 T03B
    Text: LM2937 500 mA Low Dropout Regulator General Description The LM2937 is a positive voltage regulator capable of supplying up to 500 mA of load current. The use of a PNP power transistor provides a low dropout voltage characteristic. With a load current of 500 mA the minimum input to output voltage


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    LM2937 LM2937 l71b l74b LM2937-5 LM2937ET-10 LM2937ET-12 LM2937ET-15 LM2937ET-5 LM2937ET-8 T03B PDF

    L73B

    Abstract: l71b LM2937 LM2937ET-10 LM2937ET-12 LM2937ET-15 LM2937ET-5 LM2937ET-8 T03B L74B
    Text: LM2937 500 mA Low Dropout Regulator General Description The LM2937 is a positive voltage regulator capable of supplying up to 500 mA of load current. The use of a PNP power transistor provides a low dropout voltage characteristic. With a load current of 500 mA the minimum input to output voltage


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    LM2937 LM2937 L73B l71b LM2937ET-10 LM2937ET-12 LM2937ET-15 LM2937ET-5 LM2937ET-8 T03B L74B PDF

    L73B

    Abstract: No abstract text available
    Text: LM2937 www.ti.com SNVS100E – MARCH 2000 – REVISED APRIL 2013 LM2937 500 mA Low Dropout Regulator Check for Samples: LM2937 FEATURES DESCRIPTION 1 • 2 • • • • • • • • Fully Specified for Operation Over −40°C to +125°C Output Current in Excess of 500 mA


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    LM2937 SNVS100E LM2937 L73B PDF

    l71b

    Abstract: L73B l74b 475 10v l75b LM2937 LM2937ES-10 LM2937ES-12 LM2937ESX-10 TO220 Semiconductor Packaging
    Text: LM2937 500 mA Low Dropout Regulator General Description The LM2937 is a positive voltage regulator capable of supplying up to 500 mA of load current. The use of a PNP power transistor provides a low dropout voltage characteristic. With a load current of 500 mA the minimum input to output voltage


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    LM2937 LM2937 OT-223 LM2937ET-5 LM2937ET-8 LM2937ET-10, LM2937ET-12, LM2937ET-15 l71b L73B l74b 475 10v l75b LM2937ES-10 LM2937ES-12 LM2937ESX-10 TO220 Semiconductor Packaging PDF

    L73B

    Abstract: No abstract text available
    Text: LM2937 LM2937 500 mA Low Dropout Regulator Literature Number: SNVS100D LM2937 500 mA Low Dropout Regulator General Description The LM2937 is a positive voltage regulator capable of supplying up to 500 mA of load current. The use of a PNP power transistor provides a low dropout voltage characteristic. With


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    LM2937 LM2937 SNVS100D L73B PDF

    l71b

    Abstract: L72B KTT0003B l73b L74B
    Text: LM2937 www.ti.com SNVS100D – MAY 2004 – REVISED AUGUST 2005 LM2937 500 mA Low Dropout Regulator Check for Samples: LM2937 FEATURES DESCRIPTION 1 • 2 • • • • • • • • Fully Specified for Operation Over −40°C to +125°C Output Current in Excess of 500 mA


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    LM2937 SNVS100D LM2937 l71b L72B KTT0003B l73b L74B PDF

    l71b

    Abstract: L74B L72B LM2937ET application notes L73B
    Text: LM2937 www.ti.com SNVS100D – MAY 2004 – REVISED AUGUST 2005 LM2937 500 mA Low Dropout Regulator Check for Samples: LM2937 FEATURES 1 • 2 • • • Fully specified for operation over −40°C to +125°C Output current in excess of 500 mA Output trimmed for 5% tolerance under all


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    LM2937 SNVS100D LM2937 l71b L74B L72B LM2937ET application notes L73B PDF

    Untitled

    Abstract: No abstract text available
    Text: LM2937 www.ti.com SNVS100E – MARCH 2000 – REVISED APRIL 2013 LM2937 500 mA Low Dropout Regulator Check for Samples: LM2937 FEATURES DESCRIPTION 1 • 2 • • • • • • • • Fully Specified for Operation Over −40°C to +125°C Output Current in Excess of 500 mA


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    LM2937 SNVS100E LM2937 PDF

    l71b

    Abstract: Applications note LM2937ET L74B l75b LM2937 LM2937ET-10 LM2937ET-12 LM2937ET-15 LM2937ET-5 LM2937ET-8
    Text: LM2937 500 mA Low Dropout Regulator General Description The LM2937 is a positive voltage regulator capable of supplying up to 500 mA of load current. The use of a PNP power transistor provides a low dropout voltage characteristic. With a load current of 500 mA the minimum input to output voltage


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    LM2937 LM2937 l71b Applications note LM2937ET L74B l75b LM2937ET-10 LM2937ET-12 LM2937ET-15 LM2937ET-5 LM2937ET-8 PDF

    l71b

    Abstract: l73b L74B L75B L72B LM2937-5 national semiconductor, product catalog PB4540 transistor TO-220 package thermal resistance LM2937
    Text: LM2937 500 mA Low Dropout Regulator General Description The LM2937 is a positive voltage regulator capable of supplying up to 500 mA of load current. The use of a PNP power transistor provides a low dropout voltage characteristic. With a load current of 500 mA the minimum input to output voltage


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    LM2937 LM2937 th9-111S2) CSP-9-111S2. l71b l73b L74B L75B L72B LM2937-5 national semiconductor, product catalog PB4540 transistor TO-220 package thermal resistance PDF

    L70b

    Abstract: L67c l75b l75b regulator L68A ECG1934 ic L70B TO-3PJ voltage regulator l69 L60A
    Text: P H IL I P S E C G INC 3SE D B bbSB^fl 0GDb7öG G H E C G T - H ^ IC and SVJodule Circuits Icontd ECG1877 Dual AF PO, 28 W, V cc= +35 V, RL = 4i3 18-Pin SIP-M See Fig. L75B ECG187S 15-Pin SIP-M See Fig. L68A 2 Channel Audio Driver for 40 to 50 W A F PO — E ’


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    ECG1877 18-Pin ECG187S 15-Pin ECG1879 ECG1880 v03/5 v02/6 v01/13v L70b L67c l75b l75b regulator L68A ECG1934 ic L70B TO-3PJ voltage regulator l69 L60A PDF

    si91

    Abstract: an-70 siliconix L75B2
    Text: T em ic AN701 S e m i c o n d u c t o r s Designing High-Frequency DC-to-DC Converters with the SÌ9114A Switchmode Controller b y B ijan E. M ohandes Introduction [n 1987 S ilico n ix in tro d u ced the Si9IOO m o nolithic sw itch m o d e P W M c o n tro lle r and estab lish ed th e tren d fo r


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    AN701 si91 an-70 siliconix L75B2 PDF

    U22 2.5A 250V

    Abstract: P1028 K1502 FSP400 BFX82 2N3379 C621 MT101B TIX882 c644
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E N o. H H TYPE N o. I I M IN . M A X P c ID ER ATE FREE A IR @ J to C 2 5 'C


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    NPN110. THP172 TIS11 TIX690 Pc-50mW; BVCBO-50V BVGSS-30V Yfs-800umhos 500mW; TIX881 U22 2.5A 250V P1028 K1502 FSP400 BFX82 2N3379 C621 MT101B TIX882 c644 PDF

    P1027

    Abstract: 2N3379 P1069E SD5011 UC-41 2N4088 K1502 RN1030 1203 6d ML111B
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


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    NPN110. FT4020 FT4021 FT4022 BVCEO-45V ICBO-10nA BVCEO-60V P1027 2N3379 P1069E SD5011 UC-41 2N4088 K1502 RN1030 1203 6d ML111B PDF

    L69A

    Abstract: L69C ECG1824 L75B ECG1823 18pin TFT module ECG1819 ECG1871 ECG1815 ECG1814
    Text: PHILIPS E C INC 6 3EE D B fab53*12ù 0Q0b77S 7 CMECG T ~ 7 7 '2 i 1C and M odule Circuits cont'd ECG1814 18-Pin DIP See Fig. L115A VCR Color Signal Processor (CMOS), V d d = 5 V Typ VDD D ECG1815 AF PO, 20 W, V cc= ±23 V, R l = 8 Q ;ri B U R S T G ATE


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    0aDb775 ECG1814 18-Pin L115A ECG1816 ECG1817 ECG1818 ECG1819 ECG1871 L69A L69C ECG1824 L75B ECG1823 18pin TFT module ECG1815 PDF

    c2688

    Abstract: TIP33C equivalent TIP33A equivalent TIP33C TIP33A TIP33D C-2688 c2688 transistor br c2688 120v 120v 10a 80w transistor
    Text: DE |flelbl7Sb 0 0 3 L 7 7 L 7 TE XAS I N S T R -COPTO} 62C 36776 S96t726 TEXAS INSTR OPTO TIP33, TIP33A, TIP33B, TIP33C, TIP33D, TIP33E, TIP33F N-P-N SILICON POWER TRANSISTORS JU L Y 196 8 - R EVISED O CTO BE R 1984 • Designed for Complementary Use With TIP34 Series


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    003L77L 96t726 T-33-S3 TIP33, TIP33A, TIP33B, TIP33C, TIP33D, TIP33E, TIP33F c2688 TIP33C equivalent TIP33A equivalent TIP33C TIP33A TIP33D C-2688 c2688 transistor br c2688 120v 120v 10a 80w transistor PDF

    L78B

    Abstract: L79B L74B yb78
    Text: Standard LED Lamps TYPE NO. M SB73D M RB73D M OB73D M OB73DR M GB73D M YB73D M SB74D M RB74D M OB74D MOB 74 DR M GB74D M YB74D M SB75D M RB75D M OB75D M OB75DR M GB75D M YB75D M SB76D M RB76D M OB76D M OB76DR M GB76D M YB76D M SB77D M RB77D M OB77D M OB77DR


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    SB73D RB73D OB73D OB73DR GB73D YB73D SB74D RB74D OB74D GB74D L78B L79B L74B yb78 PDF

    L69C

    Abstract: L67B l75b TR3a L115A 20WV L69A
    Text: G 1C and Module Circuits cont'd PHILIPS E C INC 3SE D H ECG1814 18-Pin DIP See Fig. L115A VCR Color Signal Processor (CMOS), V d d = 5 V Typ vdd D V CO IN PU T E ECG1815 AF PO, 20 W, V cc= ±23 V, R l = 8 Q 15-Pln SIP-M See Flg. L69A B U R S T G ATE PU LSE


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    ECG1814 18-Pin L115A 000b775 ECG1815 15-Pln ECG1814 ECG1816 ECG1817 L69C L67B l75b TR3a 20WV L69A PDF

    equivalences para LF 13003 G

    Abstract: SCR 131- 6 dj 201 13003 TO 126 13009 4098B 951 Monostable SH 13003 E 13009 E 13009 L 13003 TO 92 PACKAGE
    Text: MI L-M-38510/175B 30 April 1984 SUPE&$ËDnr5 MI L-M-38510/175A 24 November 1980 MILITARY SPECIFICATION M I C R O C I R C U I T S , D I G I T A L , CMOS, P O S I T I V E L OGI C, F L I P - F L O P S AND MONOSTABLE MULTI VI BRATOR, MONOLITHIC S I L I C O N This s p e c i f i c a t i o n i s


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    MIL-M-38510/175B MIL-M-38510/175A MIL-M-38510. A3768 equivalences para LF 13003 G SCR 131- 6 dj 201 13003 TO 126 13009 4098B 951 Monostable SH 13003 E 13009 E 13009 L 13003 TO 92 PACKAGE PDF

    K1502

    Abstract: l61c BFX82 K1501 2N4088 2N3113 RN1030 2N3379 RN1030A l53b 5
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. k I B H H TYPE No. I I MIN. M A X Pc T 6 T T IDER A TE F R E E I'A E I J to C


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    NPN110. R038q UC300 UC305 UC310 UC315 UC320 UC325 UC330 UC335 K1502 l61c BFX82 K1501 2N4088 2N3113 RN1030 2N3379 RN1030A l53b 5 PDF

    transistor k1502

    Abstract: dr 25 germanium diode DIODE 10N 40D 2N3379 CA3036 K1502 K1501 2N5513 darlington 12V 6.2A P1029
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


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    NPN110. BVCB0-80V BVCE0-60V BVEBO-15V BVCBO-100V BVCEO-80V BVEB0-15V BVCB0-60V BVCE0-40V transistor k1502 dr 25 germanium diode DIODE 10N 40D 2N3379 CA3036 K1502 K1501 2N5513 darlington 12V 6.2A P1029 PDF

    C621

    Abstract: SD5013 2N551 transistor c640 npn Transistors 2n551
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


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    PDF

    L74B

    Abstract: L73B L72B l56b L70b L77B L68B
    Text: Ultra Bright LED Lamps TY PE NO. SOURCE COLOUR Xp nm IV Vf MIN If MAX If (mcd) (mA) (V) (mA) LENS CHARACTERISTICS VIEWING ANGLE 20 1/2 G aA IA s Red 660 200 20 2.4 20 C lear transparent M SB 56C A CraAlAs R ed 660 200 20 2.4 20 R ed transparent M S B 61D A


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    L-56b L-62b L-72b L-73b L-74b L-75b L-76b L-77b L74B L73B L72B l56b L70b L77B L68B PDF