CXK581020
Abstract: L7C109WC25 L7C109WI17 5962-89598 smd diode K10 smd transistor A6 3 MT5C1008 L7C109WI20 L7C108YMB25 L7C108DMB25
Text: L7C108/109 128K x 8 Static RAM L7C108/109 DEVICES INCORPORATED 128K x 8 Static RAM DEVICES INCORPORATED FEATURES DESCRIPTION q 128K x 8 Static RAM with Chip Select Powerdown, Output Enable q Auto-Powerdown Design q Advanced CMOS Technology q High Speed — to 17 ns maximum
|
Original
|
L7C108/109
MIL-STD-883,
CY7C108/109,
IDT71024/71B024,
MT5C1008,
MCM6226A/62L26A,
CXK581020
32-pin
CXK581020
L7C109WC25
L7C109WI17
5962-89598
smd diode K10
smd transistor A6 3
MT5C1008
L7C109WI20
L7C108YMB25
L7C108DMB25
|
PDF
|
L7C108WC25
Abstract: MT5C1008 l7c109wi25
Text: L7C108/109 L7C108/109 DEVICES INCORPORATED 128K x 8 Static RAM Low Power 128K x 8 Static RAM (Low Power) DEVICES INCORPORATED FEATURES DESCRIPTION q 128K x 8 Static RAM with Chip Select Powerdown, Output Enable q Auto-Powerdown Design q Advanced CMOS Technology
|
Original
|
L7C108/109
MIL-STD-883,
CY7C108/109,
IDT71024/71B024,
MT5C1008,
MCM6226A/62L26A,
CXK581020
32-pin
L7C108WC25
MT5C1008
l7c109wi25
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY INFORMATION L7C108 L7C109 128K x 8 Static RAM Pin Configuration 32-pin Ceramic DIP 32-pin Ceramic SOJ NC A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ1 DQ2 DQ3 VSS 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17
|
Original
|
L7C108
L7C109
32-pin
LDS-L7C108/9-F
|
PDF
|
128K x 8 Static RAM
Abstract: 5962-8959812MYA 5962-8959810MZ
Text: L7C108 L7C109 128K x 8 Static RAM Pin Configuration 32-pin Ceramic DIP 32-pin Ceramic SOJ NC A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ1 DQ2 DQ3 VSS 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VCC A15 CE2 WE A13
|
Original
|
L7C108
L7C109
32-pin
MIL-STD-883,
LDS-L7C108/9-G
128K x 8 Static RAM
5962-8959812MYA
5962-8959810MZ
|
PDF
|
PDM41257SA15D
Abstract: Paradigm 41256 PDM41024S20L32 PDM41024-S20L32 PDM41257LA15D MT5C1005C CY7C199-35DMB SRAM Cross Reference EDI84256LPS25TB 41256
Text: National Semiconductor Part Numbering System N S 41024 L 20 E -SMD Grade Package Code Speed Grade Power Level Device Type /883 MIL-STD-883 Level B AC/DC tested at –55, +25 and +125°C with High Temp Burn-in -SMD DESC Standard Military Drawing AC/DC tested at –55, +25 and +125°C with High Temp Burn-in
|
Original
|
MIL-STD-883
PDM41257SA15D
Paradigm 41256
PDM41024S20L32
PDM41024-S20L32
PDM41257LA15D
MT5C1005C
CY7C199-35DMB
SRAM Cross Reference
EDI84256LPS25TB
41256
|
PDF
|
5962L0053605VYC
Abstract: 5962-9069204QXA ATMEL 302 24C16 UT9Q512E-20YCC MOH0268D UT54ACS164245SEIUCCR Z085810 5962-9762101Q2A UT28F256QLET-45UCC 5962R0250401KXA
Text: NOT MEASUREMENT SENSITIVE MIL-HDBK-103AJ 19 SEPTEMBER 2011 SUPERSEDING MIL-HDBK-103AH 28 MARCH 2011 DEPARTMENT OF DEFENSE HANDBOOK LIST OF STANDARD MICROCIRCUIT DRAWINGS This handbook is for guidance only. Do not cite this document as a requirement. AMSC N/A
|
Original
|
MIL-HDBK-103AJ
MIL-HDBK-103AH
MIL-HDBK-103AJ
5962L0053605VYC
5962-9069204QXA
ATMEL 302 24C16
UT9Q512E-20YCC
MOH0268D
UT54ACS164245SEIUCCR
Z085810
5962-9762101Q2A
UT28F256QLET-45UCC
5962R0250401KXA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: I 7 n in a /in Q v wms _mt — DEVICES INCORPORATED FEATURES 1 0 8 / 1 0 9 128K x 8 Static RAM Low Power DESCRIPTION □ 128K x 8 Static RAM with Chip Select Powerdown, Output Enable □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 17 ns maximum
|
OCR Scan
|
MIL-STD-883,
CY7C108/109,
IDT71024/71B024,
MT5C1008,
MCM6226A/62L26A,
CXK581020
32-pin
L7C109
L7C109KC25*
|
PDF
|
Untitled
Abstract: No abstract text available
Text: £ O Q l C D E V IC E S IN C O R P O R A T E D L 7 C 1 0 8 / 1 0 9 128K x 8 Static RAM Low Power ESCRIPTION □ 128K x 8 Static RAM with Chip Select Powerdown, Output Enable □ □ □ □ Auto-Powerdown Design Advanced CMOS Technology High Speed — to 17 ns maximum
|
OCR Scan
|
MIL-STD-883,
CY7C108/109,
IDT71024/71B024,
MT5C1008,
MCM6226A/62L26A,
CXK581020
32-pin
32-pin
108/9-J
|
PDF
|
Untitled
Abstract: No abstract text available
Text: l o L 7 C 10 8 /10 9 128K x 8 Static RAM g i c D E V IC E S IN C O R P O R A T E D FEATURES DESCRIPTION □ 128K x 8 Static RAM with Chip Select Powerdown, Output Enable □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 17 ns maximum
|
OCR Scan
|
MIL-STD-883,
CY7C108/109,
IDT710
MT5C1008,
226A/62L26A,
CXK581020
32-pin
L7C108/109
|
PDF
|
Untitled
Abstract: No abstract text available
Text: L 7 C 1 0 8 / 1 0 9 128K x 8 Static R A M L o w Power □ 128K x 8 Static RAM with Chip Select Powerdown, Output Enable □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 17 ns maximum □ Low Power Operation Active: 550 mW typical at 25 ns
|
OCR Scan
|
MIL-STD-883,
IDT71024/71B024,
MT5C1008,
MCM6226A
62L26A,
CXK581020
32-pin
L7C108
|
PDF
|
Untitled
Abstract: No abstract text available
Text: jjjm MMMM ÆmSmmkjjjjjj jmSSm L 7C 108/109 „ „ „ I mm DEVICES INCORPORATED DESCRIPTION FEATURES □ 128K x 8 Static RAM with Chip Select Powerdown, O utput Enable □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 17 ns maximum
|
OCR Scan
|
MIL-STD-883,
CY7C108/109,
IDT71024/71B024,
MT5C1008,
MCM6226A/
62L26A,
CXK581020
32-pin
|
PDF
|
Untitled
Abstract: No abstract text available
Text: l o g i_ 7 c io 8 /io 9 128K x 8 Static RAM Low Power i c D E V IC E S IN C O R P O R A T E D FEATURES DESCRIPTION □ 128K x 8 Static RAM with Chip Select Powerdown, Output Enable □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 15 ns maximum
|
OCR Scan
|
L7C108/109)
108-L/109-L)
MIL-STD-883,
CY7C108/109,
IDT710
24/71B024,
MT5C1008,
226A/62L26A,
CXK581020
32-pin
|
PDF
|
Untitled
Abstract: No abstract text available
Text: L7C108/109 128K x 8 Static RAM Low Power ;• v .• s [. : j ;i’[ : <a DESCRIPTION FEATURES □ 128K x 8 Static RAM with Chip Select Powerdown, Output Enable □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 15 ns maximum
|
OCR Scan
|
L7C108/109
L7C108
L7C109
L7C109KC25*
L7C109KC20*
L7C109KC17*
|
PDF
|
1419H
Abstract: 1221H
Text: mm MHMW ''qgpp. L 7C jt jwSmi S -'whmmn* mm DEVICES INCORPORATED 128K x 8 Static RAM Low Power DESCRIPTION FEATURES □ 128K x 8 Static RAM with Chip Select Powerdown, Output Enable □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 17 ns m aximum
|
OCR Scan
|
L7C108/109
MIL-STD-883,
CY7C108/109,
IDT71024/71B024,
MT5C1008,
MCM6226A/
62L26A,
CXK581020
32-pin
1419H
1221H
|
PDF
|