Lauterbach LA-3500
Abstract: CPU H8/532 Electro Stimulation H8/520 LA-6791 TRACE32- ICD LA-9547 TRACE32 CPU H8 534 DIL64
Text: Technical Information ICE-H8 H8/3001 H8/3002 H8/3003 H8/3004 H8/3005 H8/3006 H8/3007 H8/3030 H8/3031 H8/3032 H8/3040 H8/3041 H8/3042 H8/3044 H8/3045 H8/3047 H8/3048 H8/3048F H8/3060 H8/3061 H8/3062 H8/3064 H8/3065 H8/3066 H8/3067 H8/3101 H8/3102 H8/3202 H8/3212
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H8/3001
H8/3002
H8/3003
H8/3004
H8/3005
H8/3006
H8/3007
H8/3030
H8/3031
H8/3032
Lauterbach LA-3500
CPU H8/532
Electro Stimulation
H8/520
LA-6791
TRACE32- ICD
LA-9547
TRACE32
CPU H8 534
DIL64
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Untitled
Abstract: No abstract text available
Text: 3 2 Alle Reriile vorbehalten/ 1 \ \ A ll O iie n sio n s in • A ll rights reserved 5 k lechn. [h a ra c le r. 6 l ic h l lo le r ie r le Masse/ fr e e s iz e t e l e r m e s O rig in a l Size OIN A A Dal. D e ta il. Insp. la ie 1 9 . 0 2 . 9 3 PENNER HERB
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Untitled
Abstract: No abstract text available
Text: Alle Reriile vorbehalten/ d ll rig h ts reserved 1 | 3 2 k 5 6 39,8 29,2 E CD cn cvi CD E CO Si \ \ A ll O iie n sin n s in • l ic h l lo le r ie r le Masse/ free site le le tm e s lechn. [h a ra c le r. O rig in a l Size OIN A A Dal. D e ta il. la ie 1 6 .1 2 .0 4
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20Mod-F-
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Untitled
Abstract: No abstract text available
Text: Alle Rechte vorbehalfen/ 2 Ml rights reserrei 3 4 5 6 A = _ - T H - H a r f EE m odule m 09 U 008 3101 16A A00V 6kV 3 c \l ^ \6 0 0 V m _IJ_L LLT 3 HARTING -Q J-x x x x x x x x x = 1 - n z o ^ 35.8 n y \ A ll D iie n sio n s in •■
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HD6483101
Abstract: No abstract text available
Text: H8/3101 HD6483101 8-bit Microcomputer with EEPROM The H8/3101 is a single-chip microcomputer unit (M CU ) b u ilt around a high-speed H 8/300 CPU core. An 8-kbyte EEPROM, 10-kbyte ROM, 256byte RAM , and 2-bit I/O port are integrated onto the H8/3101 chip.
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H8/3101
HD6483101
H8/3101
10-kbyte
256byte
16-bit
10-MHz
HD6483101)
HD6483101
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LA 3101 ic
Abstract: TCM3101 LA 3101
Text: TCM 3101 FSK MODEM D 2 8 6 6 , AU G U ST 1 9 8 5 — REVISED FEBRUARY 1 9 8 6 j NO T REC OM M ENDED FOR NEW DESIGN DUAL-IN-LINE PACKAGE TOP VIEWI For n e w design, refer to T C M 3 1 0 5 vdd C CLK £ 2 CDT [ I 3 RXA £ 4 description TRSC 5 The T C M 3 1 0 1 is a single-chip asynchronous
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TCM3101
LM124
LA 3101 ic
LA 3101
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Untitled
Abstract: No abstract text available
Text: Alle Rechte vorbehalten/ Ml tights resetred 3 2 k 1 5 6 36,7 99 / 16,7 A xxxxxxxxx < sO r o i— > c n O >PC -G F20< B l e c h s c h r a u b e ISO 7 K 9 - S T 2 , 9 x 9 , 5 - F - H self-tapping screw ISO 7049-ST 2, 9x9, 5-F-H A il Diiensions in • y Nicht tn le rie rte HaPe/free size tolerm es
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7049-ST
D-32339
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Untitled
Abstract: No abstract text available
Text: Alle Rechte vorbehalfen/ M l rights reserrei 2 3 4 5 6 A 30.7 R r~ T ~ l R HarfHigh Den sity module 09 U 025 3101 0^1 4A 50V O J k V 3 HARTING xxxxxxxxx n\ M l D iie n sio n s in •■ y O rig in a l S iz e DIN A 4 Techn. Character. Dat. D e ta il. Insp.
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Untitled
Abstract: No abstract text available
Text: T M S 3101 LC, N C - D U A L 100-BIT S T A T I C S H IF T RE G I S T ER T M S 3102 LC. N C - D U A L 80-BIT STA TI C S H I F T R E G I S T E R T M S 3103 LC, N C - D U A L 64-BIT S T A T I C S H IF T R E G I S T E R features • £ DC to 2.5-M H z operation
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100-BIT
80-BIT
64-BIT
200-BIT
S3101
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003S5
Abstract: ATI 1026 Sn 4011 1N6641 DIODE MARKING EJL 1N6639 1N6639US 1N6640 1N6640US 1N6641US
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 4 Nov 94. j j | 1 METR IC MIL-S-19500/609A 4 August 1994 SUPERSEDING MIL-S-19500/609 25 January 1993 M I L I T A R Y SP E C I F I C A T I O N SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING
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HIL-S-19500/609A
MIL-S-19500/609
1N6639,
1N6640,
1N6641,
1N6639US,
1N6640US,
1N6641US
MIL-S-19500/231.
1N4150-1
003S5
ATI 1026
Sn 4011
1N6641
DIODE MARKING EJL
1N6639
1N6639US
1N6640
1N6640US
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74589
Abstract: GL 3101 82S25 74S189 74S89 N82S25 s189 N3101A 54/74S89
Text: 82S25-F.N • 3101 A -F.N • 54/74S89-F.N • 54/74S189-F.N DESCRIPTION APPLICATIONS This fa m ily o f R ead/W rite R andom Access M em ories is ideal fo r use in scra tch pad and high -spe ed b u ffe r m em ory ap p lica tio n s. • Scratch pad memory • Buffer memory
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82S25-F
54/74S89-F
54/74S189-F
The54/74S89/189
101A-F
74589
GL 3101
82S25
74S189
74S89
N82S25
s189
N3101A
54/74S89
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Untitled
Abstract: No abstract text available
Text: 82S25-F.N • 3101 A -F.N • 54/74S89-F.N • 54/74S189-F.N DESCRIPTION APPLICATIONS T his fa m ily o f R ead/W rite R andom A ccess M em ories is ideal fo r use in scra tch pad and h igh-speed b u ffe r m em ory ap p lic a tio n s . • Scratch pad memory
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82S25-F
54/74S89-F
54/74S189-F
101A-F
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Untitled
Abstract: No abstract text available
Text: tile Rechle vorbehallen/ 411 rights reserred 5 3 k 2 1 Mon t ageausschni 11/ p a n e l c u t out B t i l D iie n s io n s in • le th n . C h a ra c te r. l i c h l l o le r i e r l e B asse/ f r t e s i r e l o l e n u r e s O r ig in a l S iz e DIN t
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15D-F-C
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Untitled
Abstract: No abstract text available
Text: d t ) LOW POWER 3.3V CMOS FAST SRAM 256K 32K x 8-BIT) IDT71V256SA In tegrated D evice T echnology, Inc. FEATURES DESCRIPTION • Ideal for high-performance processor secondary cache • Commercial (0° to 70°C) and Industrial (-40° to 85°C) temperature options
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IDT71V256SA
10/12/15/20ns
28-pin
IDT71V256SA
144-bit
727-C11«
492-M74
10-U4-2070
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Untitled
Abstract: No abstract text available
Text: tile Rechle vorbehallen/ 411 rights reserred 5 D k 2 3 1 Mon t ageausschni 11/ p a n e l c u t out t i l Diiensions in • Original Size DIN t lethn. Character. lic h l lo le rie rle Basse/ f r t e s ire lo le n u re s Dal. Detail. Insp. 411417 1 8 .0 1 .0 5 L o e .
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25D-F-C
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ntc+B+3977+sensor
Abstract: No abstract text available
Text: 120 Sensors, Thermistors, Varistors Sensor Hybrid Modules co n t. Sensing Distance (mm) (note 1 ) Package Outline Type Sensing Frequency (Hz) Mounting Direction Relative to Gear Wheel Determination of Rotational Direction Sensors for rotational speed measurernent and reference-nlark detection (cont.)
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KM110BH/14
KM110BH/31
ntc+B+3977+sensor
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MN3101
Abstract: H027 MN3007 mn3005 equivalent MN3011 MN3002 mn3007 equivalent MN3001 MN3005 MN3009
Text: C M O S 1C DIGITAL INTEGRATED CIRCUITS PRELIMINARY DATA C lock Generator / Driver for BBD’s The MN3101 is a CMOS integrated c irc u it designed to generate lo w im pedance tw o clock phases required fo r driving BBD's. mum V gg In addition, the MN3101 provides the o p ti
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MN3101
MN3101
MN3001,
MN3002,
MN3003,
MN3004,
MN3005,
MN3006,
H027
MN3007
mn3005 equivalent
MN3011
MN3002
mn3007 equivalent
MN3001
MN3005
MN3009
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Untitled
Abstract: No abstract text available
Text: 13 12 10 M A T E R I A L S A N D FIN ISHS 17.17 B O D Y .R E A R BO D Y,C OU PLING N U T B R A S S P L A T E D GOLD CENTER CONTACT BRASS P L A T E D GOLD IN S U L A T O R T E F L O N *SfREF P A S S IV A T E D C'RING B E R Y L L IU M COPPER CRIMP T U B E B R A S S
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RG-316
EWR-1765
SD-73391-023
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MIC2951x
Abstract: MIC29512
Text: M IC 2 9 5 1 0 /2 9 5 1 2 5A Fast-Response LDO Regulator Preliminary Information General Description Features The MIC29510 and MIC29512 are high-current, high-accuracy, low-dropout voltage regulators featuring fast transient recovery from input voltage surges and output load current
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MIC29510
MIC29512
IC29510/2
MIC29512.
MIC29512,
MIC2951x
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Untitled
Abstract: No abstract text available
Text: _ MIC5200_ 100m A Low -D ropout Voltage R egulator Preliminary Information General Description Features The M IC5200 is an efficient linear voltage regulator with very low dropout voltage typically 17mV at light loads and 200mV at 100mA , and very low ground current (1mA at 100mA
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MIC5200_
IC5200
200mV
100mA)
100mA
MIC5200
MIC520
MIC5200-xxBS
OT-223
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PC4560
Abstract: No abstract text available
Text: SEC /uPC4560 DUAL HIGH-PERFORMANCE OPERATIONAL AM PLIFIER NEC Electronics Inc. D escrip tio n Pin C o n fig u ra tio n T he //PC4560 is a dual o p e ra tio n a l a m p lifie r w ith im proved slew rate and g a in -b a n d w id th p ro d u ct when c o m pared to the yuPC4559 w ith u n ity gain freq u e n cy
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/uPC4560
//PC4560
yuPC4559
PC4560
83-002181B
PC4560
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hp 3101
Abstract: hp 3101 pin hp 3201 HP PIN DIODES 5082-3041 HP5082-3305 hp 3303 5082 J 3305 5082-3041 equivalent
Text: H E W L E T T ^ PACKARD COMPONENTS PIN DIODES FOR FAST SWITCHING RF POWER SWITCHING AND ATTENUATION 5082 3101/02 5082 3201/02 5082 3301/02 5082 3303/04 5082 3305/06 - - - - - RF POWER SWITCHING/ATTENUATING Features HIGH ISOLATION Greater Than 25 dB LOW INSERTION LOSS
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Untitled
Abstract: No abstract text available
Text: _ SÌ9428DY Vishay Siliconix N-Channel 2.5-V G-S MOSFET New Product PRODUCT SU M M AR Y V p s (V) B o s to n ) (q ) 0.03 @ V qs - 4.5 V I d (A) ±6 20 0.04 V q S = 2.5 V ± 5 .2 u SO -8 It't 3^ O Ô Si N-Channel M OSFET A B S O L U T E M A X I M U M R A T IN G S ( T A ~ 2 5 C U N L E S S O T H E R W IS E N O T E D )
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9428DY
S-56943--
G2-Nov-98
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Untitled
Abstract: No abstract text available
Text: F100155 Quad Multiplexer/Latch FAIRCHILD A S chlum berger C om pany F100K E C L P ro d u c t C onnection Diagram s Description T h e F100155 c o n ta in s fo u r tra n s p a re n t latch es, ea ch o f w h ic h can a c c e p t and s to re da ta fro m tw o sou rces.
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F100155
F100K
F100155
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