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    N3101A Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    N3101A Signetics 64-Bit Bipolar Scratch PAD Memory (16 x 4) Original PDF
    N3101A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    N3101A Signetics Bipolar Memory IC Data Book 1982 Scan PDF
    N3101A Signetics Integrated Circuits Catalogue 1978/79 Scan PDF
    N3101AB Unknown IC Datasheet (Short Description and Cross Reference Only) Scan PDF
    N3101AF Unknown IC Datasheet (Short Description and Cross Reference Only) Scan PDF
    N3101AF Signetics Integrated Circuits Catalogue 1978/79 Scan PDF
    N3101AN Unknown IC Datasheet (Short Description and Cross Reference Only) Scan PDF
    N3101AN Signetics Integrated Circuits Catalogue 1978/79 Scan PDF

    N3101A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    74S301

    Abstract: TBP28S42 SIGNETICS prom 1024x8 PROM n82s123 82LS181 N82LS181 S82LS181 N82S141 TBP28P86
    Text: MAY 1982 BIPOLAR MEMORY DIVISION 8 1 9 2 -BIT BIPOLAR P R O M 1 0 2 4 X 8 DESCRIPTION The 82LS181 is field programmable, which mea ns that custom patterns are immediately available by following the fusing procedure given in this data manual. The 82LS18I is


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    PDF 8192-BIT 1024x8) 82LS181 82LS181 82LS18I N82LS181, n82hs185 n82s25 n82s16 74S301 TBP28S42 SIGNETICS prom 1024x8 PROM n82s123 N82LS181 S82LS181 N82S141 TBP28P86

    74s* programming

    Abstract: N82S16 prom 256x4 bit MCM10149 MCM7620 MCM7621 MCM7641C MCM7643C MCM7681C N82HS137
    Text: MAY 1982 BIPOLAR MEMORY DIVISION BIPOLAR M EM ORY CROSS REFERENCE BIPOLAR M EM O RY CROSS REFERENCE Continued MOTOROLA MCM10149 MCM7620 MCM7621 MCM7643C MCM7641C MCM7681C MCM82708C MCM7685C 4064 4256 10422 10470 SIGNETICS T.l. SIGNETICS *10149 N82S130 N82S131


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    PDF MCM10149 MCM7620 N82S130 MCM7621 N82S131 MCM7643C N82S137 N82HS137 MCM7641C N82S141 74s* programming N82S16 prom 256x4 bit MCM10149 MCM7681C N82HS137

    Untitled

    Abstract: No abstract text available
    Text: 82S25-F.N • 3101 A -F.N • 54/74S89-F.N • 54/74S189-F.N DESCRIPTION APPLICATIONS T his fa m ily o f R ead/W rite R andom A ccess M em ories is ideal fo r use in scra tch pad and h igh-speed b u ffe r m em ory ap p lic a tio n s . • Scratch pad memory


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    PDF 82S25-F 54/74S89-F 54/74S189-F 101A-F

    6301-1 prom

    Abstract: 3622 prom mmi 3601 PROM 3601 intel 3601 PROM PROM intel 3601 9344C N82S141 74S189 N82S137
    Text: BIPOLAR MEMORY DIVISION MAY 1982 8192-BIT BIPOLAR PROM 1024 x 8 82HS181 /82HS181A (T.S.) DESCRIPTION FEATURES The 82HS181 is fie ld p rog ra m m a b le , w h ich m eans th a t cu s to m p a tte rn s are im ­ m e d ia te ly a va ila b le by fo llo w in g th e fu s in g


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    PDF 8192-BIT 1024x8) 82HS181/82HS181A 82HS181 N82HS185 N82S25 N82S16 TBP18SA030J, 6301-1 prom 3622 prom mmi 3601 PROM 3601 intel 3601 PROM PROM intel 3601 9344C N82S141 74S189 N82S137

    N82S191

    Abstract: 6301-1 prom 82S191 SIGNETICS prom 6331-1 PROM intel 3601 SIGNETICS prom n82s141 74S200 HM76161-5 93427C
    Text: MAY 1982 BIPOLAR MEMORY DIVISION 16,384-BIT BIPOLAR PROM 2048 X 8 DESCRIPTION The 82S191 Is field programmable, which means that custom patterns are Immediate­ ly available by following the fusing proce­ dure given in this data manual. The 82S191 is supplied with all outputs at a logical low.


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    PDF 384-BIT 2048x8) 82S191 82S191 N82S191 N82HS185 N82S25 N82S16 6301-1 prom SIGNETICS prom 6331-1 PROM intel 3601 SIGNETICS prom n82s141 74S200 HM76161-5 93427C

    N82S141

    Abstract: 82HS191 MCM10149 N82S137 74S301 N82LS181 CE23 MCM7620 N82HS191 N82S130
    Text: MAY 1982 BIPOLAR M EM O RY DIVISION 16,384-BIT BIPOLAR PROM 2 0 4 8 x 8 _ 82HS191 (T.S.) DESCRIPTION PIN CONFIGURATIONS T h e 82H S 191 is fie ld p r o g r a m m a b le , w h ic h m e a n s th a t c u s to m p a tte rn s a re im m e d ia te ­


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    PDF 384-BIT 2048x8) 82HS191 82HS191 The82HS191 N82HS191, N82HS185 N82S25 N82S16 N82S141 MCM10149 N82S137 74S301 N82LS181 CE23 MCM7620 N82HS191 N82S130

    6301-1 prom

    Abstract: MMI 6301-1 93427C 6331-1 MMI 6341-1 dm74s472 PROM intel 3601 DM74S570 MMI 6330 N82S23
    Text: MAY 1982 BIPOLAR MEMORY DIVISION 82HS195 T.S. 16,384-BIT BIPOLAR PROM (4 0 9 6 x 4 ) A d v a n c e Inform ation DESCRIPTION FEATURES The 82H S 19 5 is fie ld p ro g ra m m a b le , w h ic h m e a n s th a t c u s to m p a tte rn s are im m e d i a te ­


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    PDF 384-BIT 4096x4) 82HS195 82HS195 93427C N82S129 93436C N82S130 6301-1 prom MMI 6301-1 6331-1 MMI 6341-1 dm74s472 PROM intel 3601 DM74S570 MMI 6330 N82S23

    SIGNETICS

    Abstract: N82S137 signetics bipolar memory cross reference N82S191 n82s25 TBP28P86 74S289 N82S141 N82S129 TBP24S41
    Text: MAY 1982 BIPOLAR MEMORY DIVISION BIPOLAR MEMORY CROSS REFERENCE BIPOLAR MEMORY CROSS REFERENCE Continued MOTOROLA MCM10149 MCM7620 MCM7621 MCM7643C MCM7641C MCM7681C MCM82708C MCM7685C 4064 4256 10422 10470 SIG NETICS T.l. SIG NETICS *10149 N82S130 N82S131


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    PDF MCM10149 MCM7620 N82S130 MCM7621 N82S131 MCM7643C N82S137 N82HS137 MCM7641C N82S141 SIGNETICS N82S137 signetics bipolar memory cross reference N82S191 n82s25 TBP28P86 74S289 N82S141 N82S129 TBP24S41

    N82S185

    Abstract: N82S141 93427c 74S200 N82S147 6331-1 6301-1 prom 74S301 DM74S287 PROM intel 3601
    Text: BIPOLAR M E M O R Y M AY 1962 8192-BIT BIPOLAR PROM 2 0 4 8 x 4 82S185(T.S.) DESCRIPTIO N FEATURES T h e 82S 185 is fie ld p ro g ra m m a b le , w h ic h


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    PDF 8192-BIT 2048x4) 82S185 82S185 N82S185, N82HS185 N82S25 N82S16 N82S185 N82S141 93427c 74S200 N82S147 6331-1 6301-1 prom 74S301 DM74S287 PROM intel 3601

    82S25

    Abstract: N74S189N N3101A N74S189 N82S25 N82S25N S54S189 S82S25
    Text: BIPOLAR MEMORY DIVISION MAY 1982 64-BIT BIPOLAR SCRATCH PAD MEMORY 16x4 82S25 (O.C.), 3101A (O.G.), 54/74S189 (T.S.) DESCRIPTION APPLICATIONS T h is fa m ily o f R ead/W rite R andom Access M em ories is ideal fo r use in scra tch pad and high-speed b u ffe r m em ory a pp licatio n s.


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    PDF 64-BIT 82S25 54/74S189 N74S189N, N82S25N, S54S189 82S25, 82S25 N74S189N N3101A N74S189 N82S25 N82S25N S54S189 S82S25

    N82S141

    Abstract: 93427c 6331-1 N82S137 mmi 6301-1 74S200 N82S129 74S206 MMI 6341-1 AM27S29C
    Text: MAY 1982 BIPOLAR MEMORY DIVISION 8 1 92-BIT BIPOLAR PROM 2 0 4 8 x 4 _ 82HS485/82HS185A (T.S.) DESCRIPTION FEATURES The 82HS185 is fie ld program m able, vihich means th a t cu sto m patte rn s are im m ed iate ­ ly available by fo llo w in g th e fu sin g p roce ­


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    PDF 8192-BIT 2048x4) 82HS185/82HS185A 82HS185 N82HS185 N82S25 N82S16 TBP18SA030J, N82S141 93427c 6331-1 N82S137 mmi 6301-1 74S200 N82S129 74S206 MMI 6341-1 AM27S29C

    THERMISTORS nsp 037

    Abstract: Thyristor TAG 9118 ICA 0726 0148 Transformer a1273 y k transistor AM97C11CN transistor SK A1104 PM7A2Q B8708 bzy79 yh 5032
    Text: INDEX OF COMPONENTS A Section/Page No. A.C. Adaptor. Adaptor Kits BNC e tc . Adhesive Tapes. Adhesives, Various. Aerosols.


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    PDF 200X300X360m THERMISTORS nsp 037 Thyristor TAG 9118 ICA 0726 0148 Transformer a1273 y k transistor AM97C11CN transistor SK A1104 PM7A2Q B8708 bzy79 yh 5032

    triac tag 8518

    Abstract: 70146 DS3654 X2864AD 7 segment display RL S5220 TC9160 la 4440 amplifier circuit diagram 300 watt philips ecg master replacement guide vtl 3829 A-C4 TCA965 equivalent
    Text: 1985 0 / 0 / CONTENTS VOLUME I Introduction to IC MASTER 3 Advertisers’ Index 8 Master Selection Guide Function Index I0 Part Number Index 40 Part Number Guide 300 Logo Guide 346 Application Note Directory 349 Military Parts Directory 50I Testing 506 Cross Reference


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    PDF

    TCA965 equivalent

    Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
    Text: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated


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    PDF DG211. DG300 DG308 DG211 TCA965 equivalent ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401

    N82S181

    Abstract: 82S181 N82S141 74S200 mmi 3601 6331-1 prom tbp24sa10 93427C n82s147 MMI 6330
    Text: MAY 1982 BIPOLAR MEMORY DIVISION 8192-BIT BIPOLAR PROM 1024 x 8 DESCRIPTION FEATURES The 82S180 and 82S181 are field program­ mable, which means that custom patterns are immediately available by follow ing the fusing procedure given in this data manual.


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    PDF 8192-BIT 1024x8) 82S180 /82S181 82S180 82S181 N82S181 N82S141 74S200 mmi 3601 6331-1 prom tbp24sa10 93427C n82s147 MMI 6330

    N82S131

    Abstract: N82S141 n82s123 MCM10149 MCM7620 MCM7621 MCM7641C MCM7643C MCM7681C N82HS137
    Text: MAY 1982 BIPOLAR MEMORY DIVISION BIPOLAR MEMORY CROSS REFERENCE BIPOLAR M EM O RY CROSS REFERENCE Continued MOTOROLA MCM10149 MCM7620 MCM7621 MCM7643C MCM7641C MCM7681C MCM82708C MCM7685C 4064 4256 10422 10470 SIG NETICS T.l. SIG NETICS *10149 N82S130 N82S131


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    PDF MCM10149 MCM7620 N82S130 MCM7621 N82S131 MCM7643C N82S137 N82HS137 MCM7641C N82S141 N82S131 N82S141 n82s123 MCM10149 MCM7681C N82HS137

    82S25

    Abstract: N82S25N 74S189 N82S25 N3101 N3101A N74S189 N74S89 N82S25F
    Text: Signetics M em ories - Bipolar Ram N82S25, N3101 A, N74S89 and N74S189 Series — 64 Bit Bipolar Scratch Pad Memory 16 x 4 CONNECTION DIAGRAM GENERAL DESCRIPTION This fam ily of Read/Write Random Access Memories is ideal for use in scratch pad and high-speed buffer memory


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    PDF N82S25, N3101 N74S89 N74S189 82S25 N82S25N 74S189 N82S25 N3101A N82S25F

    FZH 191

    Abstract: FZJ 101 FZH 261 fzh 111 fzh 171 FZH111 FZH 101 FZH 161 fzh 141 fzh 281
    Text: Elektronik. Wir bauen die Elemente. • VflLVO Professionelle Integrierte Schaltungen, Mikroprozessoren Produktprogramm Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die M ikroelektronik - entwickelt sich im m er rascher zum M otor für eine


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    PDF Integrie8510. FZH 191 FZJ 101 FZH 261 fzh 111 fzh 171 FZH111 FZH 101 FZH 161 fzh 141 fzh 281

    74589

    Abstract: GL 3101 82S25 74S189 74S89 N82S25 s189 N3101A 54/74S89
    Text: 82S25-F.N • 3101 A -F.N • 54/74S89-F.N • 54/74S189-F.N DESCRIPTION APPLICATIONS This fa m ily o f R ead/W rite R andom Access M em ories is ideal fo r use in scra tch pad and high -spe ed b u ffe r m em ory ap p lica tio n s. • Scratch pad memory • Buffer memory


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    PDF 82S25-F 54/74S89-F 54/74S189-F The54/74S89/189 101A-F 74589 GL 3101 82S25 74S189 74S89 N82S25 s189 N3101A 54/74S89