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    LAND PATTERN BGA 0,50 Search Results

    LAND PATTERN BGA 0,50 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MPC860PZQ50D4 Rochester Electronics LLC 32-BIT, 50MHz, RISC PROCESSOR, PBGA357, 25 X 25 MM, 1.27 MM PITCH, PLASTIC, BGA-357 Visit Rochester Electronics LLC Buy
    MPC860PVR80D4 Rochester Electronics LLC 32-BIT, 80MHz, RISC PROCESSOR, PBGA357, 25 X 25 MM, 1.27 MM PITCH, PLASTIC, BGA-357 Visit Rochester Electronics LLC Buy
    MPC855TCZQ50D4 Rochester Electronics LLC 32-BIT, 50MHz, RISC PROCESSOR, PBGA357, 25 X 25 MM, 1.27 MM PITCH, PLASTIC, BGA-357 Visit Rochester Electronics LLC Buy
    MPC860TCZQ50D4 Rochester Electronics LLC 32-BIT, 50MHz, RISC PROCESSOR, PBGA357, 25 X 25 MM, 1.27 MM PITCH, PLASTIC, BGA-357 Visit Rochester Electronics LLC Buy
    MPC860ENZQ50D4 Rochester Electronics LLC 32-BIT, 50MHz, RISC PROCESSOR, PBGA357, 25 X 25 MM, 1.27 MM PITCH, PLASTIC, BGA-357 Visit Rochester Electronics LLC Buy

    LAND PATTERN BGA 0,50 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BGA Package 0.35mm pitch

    Abstract: E-tec Interconnect .65mm bga land pattern 1072 Diode, SMD 3M Touch Systems bpw 50 TEC Driver 8 pin ic base socket round pin type lead qualitek BGA reflow guide
    Text: Ball / Land Grid Array Sockets Twist Lock Type E-tec is now the leading BGA socket manufacturer. EP patents 0829188, 0897655 US patents 6190181, 6249440 Patented in other countries. Twist lock sockets are available for any chip size and grid pattern. The SMT socket is simply placed


    Original     		PDF CH-1072 BGA Package 0.35mm pitch E-tec Interconnect .65mm bga land pattern 1072 Diode, SMD 3M Touch Systems bpw 50 TEC Driver 8 pin ic base socket round pin type lead qualitek BGA reflow guide

    12x12 bga thermal resistance

    Abstract: SZZA005 micro pitch BGA A113 TMS320VC549 TMS320VC549GGU BGA Ball Crack
    Text: Application Report 1998 MicroStar BGA Printed in U.S.A 11/98 SZZA005 MicroStar BGA Semiconductor Group Package Outline Application Report Kevin Lyne and Charles Williams Prepared by: Tanvir Raquib SZZA005 November 1998 Printed on Recycled Paper IMPORTANT NOTICE


    Original     		PDF SZZA005 thoseI1450 12x12 bga thermal resistance SZZA005 micro pitch BGA A113 TMS320VC549 TMS320VC549GGU BGA Ball Crack

    SPRU811

    Abstract: BGA reflow guide ionograph ionograph spec SZZA021B bga dye pry EndoScope schematic endoscope case to board cte table flip chip substrate
    Text: Flip Chip Ball Grid Array Package Reference Guide Literature Number: SPRU811A May 2005 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue


    Original     		PDF SPRU811A SPRU811 SPRU811 BGA reflow guide ionograph ionograph spec SZZA021B bga dye pry EndoScope schematic endoscope case to board cte table flip chip substrate

    Untitled

    Abstract: No abstract text available
    Text: TLK2201AJR 1.0 Gb to 1.6 Gb SMALL FORMĆFACTOR ETHERNET TRANSCEIVER SLLS614 − MARCH 2004 − REVISED NOVEMBER 2006 D 1.0-to 1.6-Gigabits Per Second Gbps D D D D D D D D Interfaces to Backplane, Copper Cables, or Serializer/Deserializer Low Power Consumption < 250 mW at


    Original     		PDF TLK2201AJR SLLS614 10-Bit

    TLK2201JR

    Abstract: No abstract text available
    Text: TLK2201JR 1.0 Gb to 1.6 Gb SMALL FORMĆFACTOR ETHERNET TRANSCEIVER SCAS652D − AUGUST 2000 − REVISED NOVEMBER 2002 D 1.0-to 1.6-Gigabits Per Second Gbps D D D D D D D IEEE 802.3 (Gigabit Ethernet) Compliant D Advanced 0.25-µm CMOS Technology D Interfaces to Backplane, Copper Cables, or


    Original     		PDF TLK2201JR SCAS652D 10-Bit

    Untitled

    Abstract: No abstract text available
    Text: TLK2201AJR 1.0 Gb to 1.6 Gb SMALL FORMĆFACTOR ETHERNET TRANSCEIVER SLLS614 − MARCH 2004 − REVISED NOVEMBER 2006 D 1.0-to 1.6-Gigabits Per Second Gbps D D D D D D D D Interfaces to Backplane, Copper Cables, or Serializer/Deserializer Low Power Consumption < 250 mW at


    Original     		PDF TLK2201AJR SLLS614 10-Bit

    TLK1501

    Abstract: TLK2201AJR TLK2701 TLK3101 TLK3104SA TLK3104SC TNETE2201 TNETE2201B H617
    Text: TLK2201AJR 1.0 Gb to 1.6 Gb SMALL FORMĆFACTOR ETHERNET TRANSCEIVER SLLS614 − MARCH 2004 D 1.0-to 1.6-Gigabits Per Second Gbps D D D D D D D IEEE 802.3 (Gigabit Ethernet) Compliant D Advanced 0.25-µm CMOS Technology D Interfaces to Backplane, Copper Cables, or


    Original     		PDF TLK2201AJR SLLS614 10-Bit TLK1501 TLK2201AJR TLK2701 TLK3101 TLK3104SA TLK3104SC TNETE2201 TNETE2201B H617

    Untitled

    Abstract: No abstract text available
    Text: TLK2201AJR 1.0 Gb to 1.6 Gb SMALL FORMĆFACTOR ETHERNET TRANSCEIVER SLLS614 − MARCH 2004 D 1.0-to 1.6-Gigabits Per Second Gbps D D D D D D D IEEE 802.3 (Gigabit Ethernet) Compliant D Advanced 0.25-µm CMOS Technology D Interfaces to Backplane, Copper Cables, or


    Original     		PDF TLK2201AJR SLLS614 10-Bit

    JESD22-A-101

    Abstract: JESD22-A-103A JESD22-A-104B JESD22-A113-B JESD22-B-107-A V048K060T040
    Text: PRELIMINARY VTM V048K060T040 V•I Chip – VTM Voltage Transformation Module TM • 48 V to 6 V V•I Chip Converter • 125°C operation • 40.0 A 60.0 A for 1 ms • 1 µs transient response • High density – 974 W/in3 K indicates BGA configuration. For other


    Original     		PDF V048K060T040 V048K060T040 JESD22-A-101 JESD22-A-103A JESD22-A-104B JESD22-A113-B JESD22-B-107-A

    JESD22-A-103A

    Abstract: JESD22-A-104B JESD22-A113-B JESD22-B-107-A V048K096T025 JESD22-B107 JESD22-B107-A AE3A
    Text: PRELIMINARY VTM V048K096T025 V•I Chip – VTM Voltage Transformation Module TM • 48 V to 9.6 V V•I Chip Converter • 125°C operation • 25.0 A 37.5 A for 1 ms • 1 µs transient response • High density – 974 W/in3 K indicates BGA configuration. For other


    Original     		PDF V048K096T025 V048K096T025 JESD22-A-103A JESD22-A-104B JESD22-A113-B JESD22-B-107-A JESD22-B107 JESD22-B107-A AE3A

    JESD22-A-103A

    Abstract: JESD22-A-104B JESD22-A113-B JESD22-B-107-A V048K030T070 smd diode marking sG
    Text: PRELIMINARY VTM V048K030T070 V•I Chip – VTM Voltage Transformation Module TM • 48 V to 3 V V•I Chip Converter • 125°C operation • 70 A 105 A for 1 ms • 1 µs transient response • High density – 284 A/in3 K indicates BGA configuration. For other


    Original     		PDF V048K030T070 V048K030T070 JESD22-A-103A JESD22-A-104B JESD22-A113-B JESD22-B-107-A smd diode marking sG

    IPC-9701

    Abstract: No abstract text available
    Text: VTM V•I Chip – VTM Voltage Transformation Module TM • 48 V to 2 V V•I Chip Converter • 125°C operation • 80 A 120 A for 1 ms • 1 µs transient response V048K020T080 K indicates BGA configuration. For other mounting options see Part Numbering below.


    Original     		PDF V048K020T080 V048K020T080 10/04/10M IPC-9701

    JESD22-A-103A

    Abstract: JESD22-A-104B JESD22-A113-B JESD22-B-107-A V048K120T025
    Text: PRELIMINARY VTM V048K120T025 V•I Chip – VTM Voltage Transformation Module TM • 48 V to 12 V V•I Chip Converter • 125°C operation • 25 A 37.5 A for 1 ms • 1 µs transient response • High density – 1200 W/in3 K indicates BGA configuration. For other


    Original     		PDF V048K120T025 V048K120T025 JESD22-A-103A JESD22-A-104B JESD22-A113-B JESD22-B-107-A

    JESD22-A-103A

    Abstract: JESD22-A-104B JESD22-A113-B JESD22-B-107-A V048K480T006 337 BGA footprint
    Text: PRELIMINARY VTM V048K480T006 V•I Chip – VTM Voltage Transformation Module TM • 48 V to 48 V V•I Chip Converter • 125°C operation • 6.3 A 9.4 A for 1 ms • 1 µs transient response • High density – 1218 W/in3 K indicates BGA configuration. For other


    Original     		PDF V048K480T006 V048K480T006 JESD22-A-103A JESD22-A-104B JESD22-A113-B JESD22-B-107-A 337 BGA footprint

    Untitled

    Abstract: No abstract text available
    Text: V•I Chip – BCM Bus Converter Module TM B048K120T20 + + –K – • >96% efficiency • 200 Watt 300 Watt for 1 ms • 125°C operation • High density – up to 800 W/in3 • 1 µs transient response • Small footprint – 200 W/in • >3.5 million hours MTBF


    Original     		PDF B048K120T20 02/04/10M

    337 BGA footprint

    Abstract: IPC 9701
    Text: PRELIMINARY VTM V048K480T006 V•I Chip – VTM Voltage Transformation Module TM • 48 V to 48 V V•I Chip Converter • 125°C operation • 6.3 A 9.4 A for 1 ms • 1 µs transient response • High density – 1218 W/in3 K indicates BGA configuration. For other


    Original     		PDF V048K480T006 V048K480T006 337 BGA footprint IPC 9701

    Untitled

    Abstract: No abstract text available
    Text: V•I Chip – BCM Bus Converter Module TM B048K096T24 + + –K – • >96% efficiency • 240 Watt 360 Watt for 1 ms • 125°C operation • High density – up to 960 W/in3 • <1 µs transient response • Small footprint – 240 W/in • >3.5 million hours MTBF


    Original     		PDF B048K096T24 02/04/10M

    Untitled

    Abstract: No abstract text available
    Text: V•I Chip – BCM Bus Converter Module TM B048K120T20 Vin = 42 - 53 V Vout = 10.5 - 13.25 V Iout = 17.0 A K = 1/4 Rout = 25 mΩ max • 48V to 12V V•I Chip Converter • >96% efficiency • 200 Watt 300 Watt for 1 mS • 125°C operation • High density – up to 800 W/in3


    Original     		PDF B048K120T20 8/03/10M

    IPC-9701

    Abstract: JESD22-A-101
    Text: PRELIMINARY V•I Chip Voltage Transformation Module BCM V•I Chip – BCM Bus Converter Module TM B048K120T30 K indicates BGA configuration. For other mounting options see Part Numbering below. • 48 V to 12 V V•I Chip Converter • 96% efficiency • 300 Watt 450 Watt for 1 ms


    Original     		PDF B048K120T30 IPC-9701 JESD22-A-101

    BCM reflow

    Abstract: smd transistor marking SG smd transistor v2 IPC-9701
    Text: V•I Chip – BCM Bus Converter Module TM B048K120T10 Vin = 42 - 53 V Vout = 10.5 - 13.25 V Iout = 8.3 A K = 1/4 Rout = 32 mΩ max • 48V to 12V V•I Chip Converter • >96% efficiency • 100 Watt 150 Watt for 1 ms • 125°C operation • High density – up to 400 W/in3


    Original     		PDF B048K120T10 11/03/10M BCM reflow smd transistor marking SG smd transistor v2 IPC-9701

    transistor af 126

    Abstract: JESD22-B-107-A J-STD-029 mount chip transistor 332
    Text: V•I Chip – BCM Bus Converter Module TM B048K120T20 Vin = 42 - 53 V Vout = 10.5 - 13.25 V Iout = 17.0 A K = 1/4 Rout = 25 mΩ max • 48V to 12V V•I Chip Converter • >96% efficiency • 200 Watt 300 Watt for 1 mS • 125°C operation • High density – up to 800 W/in3


    Original     		PDF B048K120T20 7/03/10M transistor af 126 JESD22-B-107-A J-STD-029 mount chip transistor 332

    JESD22-A-103A

    Abstract: jesd22-a-104B JESD22 A-102 JESD22-A-101 JESD22-B-107-A converter 48 to 24 switching
    Text: PRELIMINARY V•I Chip Bus Converter Module BCM V•I Chip – BCM Bus Converter Module TM B048K480T30 K indicates BGA configuration. For other mounting options see Part Numbering below. • 48 V to 48 V V•I Chip Converter • Typical efficiency 96% • 300 Watt 450 Watt for 1 ms


    Original     		PDF B048K480T30 JESD22-A-103A jesd22-a-104B JESD22 A-102 JESD22-A-101 JESD22-B-107-A converter 48 to 24 switching

    48V-to-12V

    Abstract: smd TRANSISTOR marking T1
    Text: V•I Chip – BCM Bus Converter Module TM B048K120T15 Vin = 42 - 53 V Vout = 10.5 - 13.25 V Iout = 12.5 A K = 1/4 Rout = 32 mΩ max • 48V to 12V V•I Chip Converter • >96% efficiency • 150 Watt 225 Watt for 1 ms • 125°C operation • High density – up to 600 W/in3


    Original     		PDF B048K120T15 11/03/10M 48V-to-12V smd TRANSISTOR marking T1

    A3G3

    Abstract: No abstract text available
    Text: PRELIMINARY V•I Chip Bus Converter Module BCM V•I Chip – BCM Bus Converter Module TM B048K030T21 K indicates BGA configuration. For other mounting options see Part Numbering below. • 48 V to 3 V V•I Chip Converter • 94% efficiency • 210 Watt 315 Watt for 1 ms


    Original     		PDF B048K030T21 A3G3