Untitled
Abstract: No abstract text available
Text: HL63101MG/102MG ODE2065-01 T Target Specification Rev.1 Apr. 17, 2009 Low Operating Current Visible Laser Diode Description The HL63101MG/102MG are 0.63 m band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.
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HL63101MG/102MG
ODE2065-01
HL63101MG/102MG
HL63101MG/102MG:
HL63101MG
HL63102MG
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Untitled
Abstract: No abstract text available
Text: 808/830 nm Broad Area Laser Diode Product Family Specification Sheet The M8xx series of Broad Area Laser Diodes from Axcel Photonics offer high CW optical power from a 100 micron multi-mode aperture and high brightness with industry leading reliability. This series of devices is
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D-82140
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HL6385DG
Abstract: opnext Opnext Japan
Text: HL6385DG ODE-208-075A Z Visible High Power Laser Diode Tentative Specification Rev.1 Dec. 11, 2007 Description The HL6385DG is 0.64 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. It is suitable as light sources for laser display and various other types of optical equipment.
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HL6385DG
ODE-208-075A
HL6385DG
HL6385DG:
opnext
Opnext Japan
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Untitled
Abstract: No abstract text available
Text: 1450/1480 nm Broad Area Laser Diode Product Family Specification Sheet The M4XX series of Broad Area Laser Diodes from Axcel Photonics offer high CW optical power from a 100 micron multi-mode aperture and high brightness with industry leading reliability. This series of devices is
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/www/pdf/axcel/14xx
D-82140
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Untitled
Abstract: No abstract text available
Text: 915/940/965/980 nm Broad Area Laser Diode Product Family Specification Sheet The M9xx series of Broad Area Laser Diodes from Axcel Photonics offer high CW optical power from a 100 micron multi-mode aperture and high brightness with industry leading reliability. This series of devices is
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965unt
D-82140
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Untitled
Abstract: No abstract text available
Text: HL6395MG/96MG High Temperature Low Operating Current Visible Laser Diode ODE2066-01 T Target Specification Rev.1 Nov. 17, 2008 Description The HL6395MG/96MG are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers and optical equipment for measurement.
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HL6395MG/96MG
ODE2066-01
HL6395MG/96MG
HL6395MG
HL6395MG/96MG:
HL6396MG
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laser dfb 1550nm 40gb
Abstract: bth 150
Text: Drawing No. JOG-00912 OKI Electronics Components OL5155M Rev. 2:[01. 2002] Preliminary 1550 nm 40 Gb/s EA Modulator Integrated DFB Laser 1. DESCRIPTION This sheet is defining a target specification of OL5155M, which is a 1550-nm DFB laser diode monolithically integrated with an electro-absorption EA modulator for 40 Gb/s operation in a 7-pin
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JOG-00912
OL5155M
OL5155M,
1550-nm
40Gb/s
5155M
laser dfb 1550nm 40gb
bth 150
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OL5157M
Abstract: EAM LD 10 gb laser diode Thermistor bth 100 laser dfb 1550nm 40gb blue Laser-Diode Ghz DFB ea 40Gb
Text: Drawing No. JOG-01223 Optical Components OL5157M Rev. 3:[10. 2008] Preliminary 1550 nm 40 Gb/s EA Modulator Integrated DFB Laser 1. DESCRIPTION This sheet is defining a target specification of OL5157M, which is a 1550-nm DFB laser diode monolithically integrated with an electro-absorption EA modulator for 40 Gb/s operation in a 7-pin
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JOG-01223
OL5157M
OL5157M,
1550-nm
40Gb/s
OL5157M
EAM LD
10 gb laser diode
Thermistor bth 100
laser dfb 1550nm 40gb
blue Laser-Diode Ghz
DFB ea
40Gb
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OKI EAM
Abstract: OL5157M Oki EA modulator ol515 laser dfb 1550nm 40gb
Text: Drawing No. JOG-01223 OKI Electronics Components OL5157M Rev. 2:[12. 2005] Preliminary 1550 nm 40 Gb/s EA Modulator Integrated DFB Laser 1. DESCRIPTION This sheet is defining a target specification of OL5157M, which is a 1550-nm DFB laser diode monolithically integrated with an electro-absorption EA modulator for 40 Gb/s operation in a 7-pin
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JOG-01223
OL5157M
OL5157M,
1550-nm
40Gb/s
D-41460
OKI EAM
OL5157M
Oki EA modulator
ol515
laser dfb 1550nm 40gb
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1550 laser diode TEC TO CAN
Abstract: OKI Optical OL5155M Oki modulator 10 gb laser diode laser dfb 1550nm 40gb electroabsorption Oki EA modulator
Text: JOG-00912 OKI Electronics Components Preliminary OL 5155M Rev. 4:[12. 2002] 1550 nm 40 Gb/s EA Modulator Integrated DFB Laser 1. DESCRIPTION This sheet is defining a target specification of OL5155M, which is a 1550-nm DFB laser diode monolithically integrated with an electro-absorption EA modulator for 40 Gb/s operation in a 7-pin
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JOG-00912
5155M
OL5155M,
1550-nm
40Gb/s
D-41460
1550 laser diode TEC TO CAN
OKI Optical OL5155M
Oki modulator
10 gb laser diode
laser dfb 1550nm 40gb
electroabsorption
Oki EA modulator
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Untitled
Abstract: No abstract text available
Text: SMA4306 Ordering number : ENA1771B SANYO Semiconductors DATA SHEET Si Monolithic Linear IC SMA4306 Oscillator IC for Laser Diode Noise Suppression Applications Features • • • Frequency specification with LC : Added LC sets the operating frequency Ultra small package : 1.6x1.6×0.56mm
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SMA4306
ENA1771B
702etc.
A1771-6/6
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Untitled
Abstract: No abstract text available
Text: SMA4306 Ordering number : ENA1771A SANYO Semiconductors DATA SHEET Si Monolithic Linear IC SMA4306 Oscillator IC for Laser Diode Noise Suppression Applications Features • • • Frequency specification with LC : Added LC sets the operating frequency Ultra small package : 1.6x1.6×0.56mm
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SMA4306
ENA1771A
A1771-4/4
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a1771
Abstract: SMA4306
Text: SMA4306 Ordering number : ENA1771 SANYO Semiconductors DATA SHEET Si Monolithic Linear IC SMA4306 Oscillator IC for Laser Diode Noise Suppression Applications Features • • • Frequency specification with LC : Added LC sets the operating frequency Ultra small package : 1.6x1.6×0.56mm
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ENA1771
SMA4306
A1771-4/4
a1771
SMA4306
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laser 1310nm BUTTERFLY
Abstract: PD submount
Text: Sumitomo Electric Industries, Ltd. Part No. : SLW581A series Document No. : HUW0825010-01A Date of issue : September 10, 2008 Preliminary Specification of 1.31µm DFB Laser Diode Module for wireless communication system application SLW581A series RoHS Compliant
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SLW581A
HUW0825010-01A
laser 1310nm BUTTERFLY
PD submount
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iCreate Technologies
Abstract: laserdiode application laserdiode driver icreate
Text: Create i7032 200 Mbps Laser-Diode Driver Data Sheet iCreate Technologies Corporation 2003 iCreate Technologies Corporation This document contains preliminary information on product but not yet fully characterized. iCreate Technologies Corporation reserves the right to change the specification in any manner without notice.
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i7032
ICR-DS-i7032001
iCreate Technologies
laserdiode application
laserdiode driver
icreate
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i7032eg
Abstract: i7032-eg ICR-DS-0200003 laserdiode application icreate
Text: Create i7032 200 Mbps Laser-Diode Driver Data Sheet iCreate Technologies Corporation 2003 iCreate Technologies Corporation This document contains preliminary information on product but not yet fully characterized. iCreate Technologies Corporation reserves the right to change the specification in any manner without notice.
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i7032
ICR-DS-0200003
i7032eg
i7032-eg
ICR-DS-0200003
laserdiode application
icreate
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F490
Abstract: F290 SLT541B
Text: Sumitomo Electric Industries, Ltd. Part No. : SLT541B Series Document No. : HUW0725019-01A Date of issue : October 26, 2007 Technical Specification of 1.5µm DFB Laser Diode Module for WDM External Modulation SLT541B series RoHS Compliant Sumitomo Electric Industries, Ltd.
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SLT541B
HUW0725019-01A
F490
F290
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F-365
Abstract: No abstract text available
Text: Sumitomo Electric Industries, Ltd. Part No. : SLT5415 Series Document No. : HUW0625004-01A Date of issue : June 14, 2006 Technical Specification of 1.5µm DFB Laser Diode Module for WDM External Modulation SLT5415 series RoHS Compliant Sumitomo Electric Industries, Ltd.
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SLT5415
HUW0625004-01A
ODRO05132.
F-365
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F9232
Abstract: coating concentricity UV emitting diode 200 nm 980 nm laser diode SMB-B0980B
Text: SPECIALTY SINGLE-MODE FIBER Single-Mode Specification Sheet ClearLite 980 Photonic Fibers CL 980 14 Product Description OFS offers this fiber optimized for use in pigtailing pump laser diodes emitting at 980 nm. 980 fibers with larger MFDs couple more light from the diode into the
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SMB-B0980B
F9232
F9232
coating concentricity
UV emitting diode 200 nm
980 nm laser diode
SMB-B0980B
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GB-2828-87
Abstract: GB2828-87 diode 4937 850nm laser diode
Text: ELD85NPT50 Multi-Quantum Well MQW Laser Diode Specification Model: ELD85NPT50 ROITHNER LASERTECHNIK A-1040 Vienna, Austria Schoenbrunner Strasse 7 Tel.: +43-1-586 52 43 - 0 Fax.: +43-1-586 52 43 44 e-mail: office@roithner-laser.com http://www.roithner-laser.com
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ELD85NPT50
GB-2828-87
GB2828-87
diode 4937
850nm laser diode
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Untitled
Abstract: No abstract text available
Text: VITESSE SEMICONDUCTOR CORPORATION Target Specification SONET/SDH 10.7Gb/s Laser Diode Driver VSC7990 Features • Typical Rise Times of 25ps • Direct Access to Modulation and Bias FETs • On-chip Reclocking Register • On-chip Mux for Selectable Clocked or Nonclocked Applications
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100mA
VSC7990
G52303-0,
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Untitled
Abstract: No abstract text available
Text: Sumitomo Electric Industries, Ltd. Part No.: Document No.: Date of issue: SLV4270 Series HUW9823056-01F August 9, 2006 Technical Specification of 1.3µm MQW-DFB Laser Diode Module for CATV Return-Path Application SLV4270 Series RoHS Compliant Page 1 of 7 Sumitomo Electric Industries, Ltd.
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SLV4270
HUW9823056-01F
HUW9823056-01D
HUW9823056-01E
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"WORM"
Abstract: No abstract text available
Text: P H IL IP S 41E IN T E R N A T IO N A L i> m 711002b oosm b? IPHIN T PI W APR 0 3 1990 F - t t - V z . 3hlllps Components Data sheet status Product specification code 9397 253 40011 date of Issue April 1990 CQL71A Medium power collimator pen FEATURES OPERATIONAL HAZARD - SEMICONDUCTOR LASER DIODE
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711002b
CQL71A
"WORM"
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ELD85NPT5
Abstract: GB-2828-87
Text: Multi-Quantum Well MQW Laser Diode Specification Model: ELD85NPT5 03.08.2010 eld85npt5.doc 1 of 11 Catalog 1.Scope……………………………………………………………………………………………………….3 2.Outline Dimensions and Terminal Connections …………………………………… ………………3
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eld85npt5
GB-2828-87
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