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    LATCHED ADDRESS EPROM Search Results

    LATCHED ADDRESS EPROM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCKE800NL Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Latch, WSON10B Visit Toshiba Electronic Devices & Storage Corporation
    TCKE812NL Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Latch, Fixed Over Voltage Clamp, WSON10B Visit Toshiba Electronic Devices & Storage Corporation
    TCKE712BNL Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 13.2 V, 3.65 A, Latch, Adjustable Over Voltage Protection, WSON10 Visit Toshiba Electronic Devices & Storage Corporation
    TCTH022AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Push-pull type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation
    TCTH022BE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Open-drain type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation

    LATCHED ADDRESS EPROM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    M87C257

    Abstract: 1N914 PLCC32
    Text: M87C257 ADDRESS LATCHED 256K 32K x 8 UV EPROM and OTP EPROM INTEGRATED ADDRESS LATCH FAST ACCESS TIME: 45ns LOW POWER “CMOS” CONSUMPTION: – Active Current 30mA – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ELECTRONIC SIGNATURE for AUTOMATED


    Original     		PDF M87C257 FDIP28W PLCC32 M87C257 1N914 PLCC32

    1N914

    Abstract: M87C257 PLCC32
    Text: M87C257 ADDRESS LATCHED 256K 32K x 8 UV EPROM and OTP EPROM INTEGRATED ADDRESS LATCH FAST ACCESS TIME: 45ns LOW POWER “CMOS” CONSUMPTION: – Active Current 30mA – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ELECTRONIC SIGNATURE for AUTOMATED


    Original     		PDF M87C257 FDIP28W PLCC32 M87C257 1N914 PLCC32

    latched address eprom

    Abstract: No abstract text available
    Text: M87C257 ADDRESS LATCHED 256K 32K x 8 UV EPROM and OTP EPROM DATA BRIEFING INTEGRATED ADDRESS LATCH FAST ACCESS TIME: 45ns LOW POWER “CMOS” CONSUMPTION: – Active Current 30mA – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ELECTRONIC SIGNATURE for AUTOMATED


    Original     		PDF M87C257 FDIP28W PLCC32 M87C257 100ns 120ns 150ns 200ns latched address eprom

    FDIP28WB

    Abstract: JESD97 M87C257 PLCC32
    Text: M87C257 Address Latched 256 Kbit 32Kb x8 UV EPROM and OTP EPROM Feature summary • 5V ± 10% supply voltage in Read operation ■ Integrated address latch ■ Access time: 45ns ■ Low power consumption: – Active Current 30mA – Standby Current 100µA


    Original     		PDF M87C257 FDIP28W PLCC32 FDIP28WB JESD97 M87C257 PLCC32

    FDIP28W

    Abstract: M87C257 PLCC32
    Text: M87C257 ADDRESS LATCHED 256 Kbit 32Kb x 8 UV EPROM and OTP EPROM DATA BRIEFING 5V ± 10% SUPPLY VOLTAGE in READ OPERATION INTEGRATED ADDRESS LATCH FAST ACCESS TIME: 45ns LOW POWER “CMOS” CONSUMPTION: – Active Current 30mA – Standby Current 100µA


    Original     		PDF M87C257 FDIP28W PLCC32 M87C257 100ns 120ns 150ns 200ns AI00929 FDIP28W PLCC32

    M87C257

    Abstract: FDIP28WB JESD97 PLCC32
    Text: M87C257 Address Latched 256 Kbit 32Kb x8 UV EPROM and OTP EPROM Feature summary • 5V ± 10% supply voltage in Read operation ■ Integrated address latch ■ Access time: 45ns ■ Low power consumption: – Active Current 30mA – Standby Current 100µA


    Original     		PDF M87C257 FDIP28W PLCC32 M87C257 FDIP28WB JESD97 PLCC32

    Untitled

    Abstract: No abstract text available
    Text: M87C257 Address Latched 256 Kbit 32Kb x8 UV EPROM and OTP EPROM Feature summary • 5V ± 10% supply voltage in Read operation ■ Integrated address latch ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P (


    Original     		PDF M87C257 FDIP28W PLCC32

    SST31LF021E

    Abstract: 32-PIN
    Text: 2 Megabit Flash + 1 Megabit SRAM ComboMemory SST31LF021E Advance Information FEATURES: • Organized as 256K x8 Flash + 128K x8 SRAM • Latched Address and Data for Flash • Single 3.0-3.6V Read and Write Operations • • Flash Fast Erase and Byte-Program:


    Original     		PDF SST31LF021E 32-Pin MO-142 SST31LF021E

    Untitled

    Abstract: No abstract text available
    Text: CY7C277 CY7C279 CYPRESS SEMICONDUCTOR Features Reprogrammable 32K x 8 Registered PROM Programmable address latch enable input Programmable synchronous or asynchronous output enable 7C277 On-chip edge-triggered output registers (7C277) Optional registered/latched address


    OCR Scan     		PDF CY7C277 CY7C279 7C277) 7C279) 300-mil, 28-pin

    87C257 "pin compatible"

    Abstract: No abstract text available
    Text: SGS-1H0MS0N m M87C257 ADDRESS LATCHED CMOS 256K 32K x 8 UV EPROM and OTP ROM ABBREVIATED DATA INTEGRATED ADDRESS LATCH VERY FAST ACCESS TIME: 100ns COMPATIBLE with HIGH SPEED MICROPRO­ CESSORS, ZERO WAIT STATE LOW POWER “CMOS” CONSUMPTION: - Active Current 30mA


    OCR Scan     		PDF M87C257 100ns M87C257 87C257 "pin compatible"

    Untitled

    Abstract: No abstract text available
    Text: / T 7 SGS-THOMSON ^ 7 # . llD g ®llLI TO(s lfSlD(gi M87C257 ADDRESS LATCHED 256K (32K x 8) UV EPROM and OTP EPROM • INTEGRATED ADDRESS LATCH ■ FAST ACCESS TIME: 45ns ■ LOW POWER “CMOS” CONSUMPTION: - Active Current 30mA - Standby Current 100|aA


    OCR Scan     		PDF M87C257 M87C257

    Untitled

    Abstract: No abstract text available
    Text: ¿ = 7 S C S -TH O M S O N ^ 7 # RfflflWSKLiOTriMMDSS M87C257 ADDRESS LATCHED CMOS 256K 32K x 8 UV EPROM and OTP ROM • INTEGRATED ADDRESS LATCH ■ VERY FAST AC C ESS TIME: 100ns ■ COMPATIBLE with HIGH S P EED MICROPRO­ C ESSO R S, ZERO WAIT STATE


    OCR Scan     		PDF M87C257 100ns 100ji M87C257 FDIP28W PLCC32

    Untitled

    Abstract: No abstract text available
    Text: SGS-1H0 M S0 N A 7 M . [» iS m ifg M M t g M 87C 257 ADDRESS LATCHED 256K 32K x 8 UV EPROM and OTP EPROM • INTEGRATED ADDRESS LATCH ■ FAST ACCESS TIME: 45ns ■ LOW POWER “CMOS" CONSUMPTION: - Active Current 30mA - Standby Current 100(iA ■ PROGRAMMING VOLTAGE: 12.75V


    OCR Scan     		PDF M87C257 PLCC32

    87C257

    Abstract: No abstract text available
    Text: / = T SCS-THOMSON ^ 7 # M87C257 M O S M i[ L i( O T ® [ il § ADDRESS LATCHED CMOS 256K (32K x 8 UV EPROM and OTP ROM • INTEGRATED ADDRESS LATCH ■ VERY FAST ACC ESS TIME: 100ns ■ CO M PATIBLE W ITH HIGH SPEED M IC R O ­ PROCESSORS, ZER O W AIT STATE


    OCR Scan     		PDF M87C257 100ns M87C257 87C257 FDIP28W PLCC32

    mgra

    Abstract: PLCC32-32-LEAD M87C257-20F1 MGRA 21 M87C257-12F1
    Text: SGS-THOMSON ILiCTtFM O O S M 87C 257 LATCHED 256K 32Kx8 CMOS UV EPROM - OTP ROM • ■ ■ ■ ■ ■ ■ INTEGRATED ADDRESS LATCH. VERY FAST ACCESS TIME : 100 ns. COMPATIBLE TO HIGH SPEED MICROPRO­ CESSORS ZERO WAIT STATE. LOW POWER "CMOS" CONSUMPTION :


    OCR Scan     		PDF 32Kx8) M87C257 28-pin transparent7C257-15C6 DIP28 mgra PLCC32-32-LEAD M87C257-20F1 MGRA 21 M87C257-12F1

    xicor X2816A

    Abstract: X2816A xicor 2816 X2816AM X2816AM-35 X2816AM-45 x2816
    Text: im Military 16K 2048 x 8 Bit X2816AM Electrically Erasable PROM FEATURES • Simple Byte Write Operation —No High Voltages Necessary —Single TTL Level WE Signal Modifies Data —Internally Latched Address and Data —Self Timed Write_ —Noise Protected WE Pin


    OCR Scan     		PDF X2816AM X2816A X2816AM xicor X2816A xicor 2816 X2816AM-35 X2816AM-45 x2816

    xicor X2816A

    Abstract: xicor 2816 X2816A x2816 X2816AM X2816AM-35 X2816AM-45
    Text: im Military 16K 2048 x 8 Bit X2816AM Electrically Erasable PROM FEATURES • Simple Byte Write Operation —No High Voltages Necessary —Single TTL Level WE Signal Modifies Data —Internally Latched Address and Data —Self Timed Write_ —Noise Protected WE Pin


    OCR Scan     		PDF X2816AM X2816A X2816AM xicor X2816A xicor 2816 x2816 X2816AM-35 X2816AM-45

    X2816A-35

    Abstract: xicor X2816A X2816A X2816A-25 X2816A-45 x2816
    Text: l& B t Commercial X2816A , n« v # n il Industrial_ X2816AI_ 20 48x8 Bit 16K Electrically Erasable PROM FEATURES • Simple Byte Write Operation — No High Voltages Necessary —Single TTL Level WE Signal Modifies Data — Internally Latched Address and Data


    OCR Scan     		PDF X2816A X2816AI_ X2816A X2816A, X2816AI X2816A-35 xicor X2816A X2816A-25 X2816A-45 x2816

    tegra

    Abstract: tegra 2 wsi magicpro ii WSI MagicPro II Programmer tegra 2 memory AD10 WS57C66-55D WS57C66-70CMB WS57C66-70D WS57C66-70DM
    Text: WS57C66 ADVANCE INFORMATION WAFERSCALE INTEGRATION, INC. HIGH-SPEED 4K x 16 CMOS EPROM WITH MUX I/O KEY FEATURES Fast Access Time — 55 ns — Commercial — 70 ns — Military Multiplexed I/O — Interfaces Directly to a 16-Bit Multiplexed Bus — Address Latched on Chip


    OCR Scan     		PDF WS57C66 16-Bit 28-Pin WS57C66 WS57C66-55D WS57C66-70CMB MIL-STD-883C WS57C66-70D WS57C66-70DM tegra tegra 2 wsi magicpro ii WSI MagicPro II Programmer tegra 2 memory AD10

    x2816am

    Abstract: No abstract text available
    Text: f e 16K Military X2816AM l F 2048 x 8 Bit Electrically Erasable PROM FEATURES • Simple Byte Write Operation —No High Voltages Necessary —Single TTL Level WE Signal Modifies Data — Internally Latched Address and Data —Self Timed Write — Noise Protected WE Pin


    OCR Scan     		PDF X2816AM X2816A X2816AM

    Untitled

    Abstract: No abstract text available
    Text: 5 7 . SGS-THOMSON M87C257 IM 0 ffi ô [SHIgM ( ô ) IM H ( 5 g AD D RESS LATCHED 256K (32K x 8) UV EPROM and OTP ROM • INTEGRATED ADDRESS LATCH ■ VERY FAST ACCESS TIME: 70ns ■ COMPATIBLE with HIGHSPEED MICROPROCESSORS, ZERO WAIT STATE ■ LOW POWER “CMOS’ CONSUMPTION:


    OCR Scan     		PDF M87C257 FDIP28W PLCC32

    Untitled

    Abstract: No abstract text available
    Text: S G S -T H O M S O N G M87C257 KLC ì. LATCHED 256K 32Kx8 CMOS UV EPROM - OTP ROM • INTEGRATED ADDRESS LATCH. ■ VERY FAST ACCESS TIME : 100 ns. ■ COMPATIBLE TO HIGH SPEED MICROPRO­ CESSORS ZERO WAIT STATE. ■ LOW POWER "CMOS" CONSUMPTION : - Active Current 30mA


    OCR Scan     		PDF M87C257 32Kx8) 200nA M87C257 M87C21 M87C257-15XC1 PLCC32 M87C257-15C1

    85C508

    Abstract: Intel 85C508 290175 incir
    Text: i n t o l. 85C508 FAST 1-MICRON CHMOS DECODER/LATCH juPLD • High-Performance Programmable Logic Device for High-Speed Microprocessorto-Memory Decode ■ 16 Dedicated Inputs for Address/Data Bus Decoding; 8 Latched Outputs; 1 Global Latch Enable ■ Supports Intel386 , i468TM, ¡860tm,


    OCR Scan     		PDF 85C508 Intel386TM, i468TM, 860tm, 28-Pin 300-mil 85C508-7. 8SC508 Intel 85C508 290175 incir

    87C257 equivalent

    Abstract: 87C257 "pin compatible" MT5C1628
    Text: I^ H C R O N MT5C1628 2K X 8 SRAM LATCHED SRAM WITH ADDRESS LATCH FEATURES PIN ASSIGNMENT Top View OPTIONS • Timing 15ns access 30ns access 45ns access • Packages Plastic DIP (300 mil) Ceramic DIP (300 mil) Plastic SOJ (300 mil) Ceramic LCC (28 pin)


    OCR Scan     		PDF MT5C1628 MCS-96 74LS373 28L/DIP T5C1628 87C257 equivalent 87C257 "pin compatible" MT5C1628