ZF112
Abstract: ZF38 valor ST7032 N117 smd n43 d type 50 pin connector HYUNDAI i10 prxd2 ic 74ls245 pdf datasheet ZF78
Text: LED_ACT.1 ACT[7:0] ACT[7:0] LED_BLK.1 LDGA LDGA LDGB LDGB AUI_BLK.1 LDA[4:0],LDB[4:0] LDA[4:0],LDB[4:0] DO+ CNTRL.1 DO- LED_BLKP.1 ACT[7:0] DO+ DO+ DO- DO- CI+ LDGA CI- LDGB PLDA[4:0],PLDB[4:0] CI+ PLDA[4:0],PLDB[4:0] LDA[4:0],LDB[4:0] CI- ISA_HUB.1 DI+ CI+
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BCLK10
RC1206
C1206C104K5RAC
ZF112
ZF38
valor ST7032
N117
smd n43
d type 50 pin connector
HYUNDAI i10
prxd2
ic 74ls245 pdf datasheet
ZF78
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LDR05
Abstract: LDR07 LDR09 LDR-09 j9 smd LCS-1-04A LMP05 smt LDR aa 472m 13mm ldr 12
Text: 台灣伏特電子股份有限公司 TAIWAN VOLT ELECTRONIC CO.,LTD Type J:SMD CHOKES CONTENTS PAGE = LDB TYPE - 1~8 LBT TYPE - 9~12 LDR TYPE -
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74AC165
Abstract: iF80H-1FBFH 80C196NP IF80H 8XC196MH SF 119 D AD7893 p210w0 LD 7576 OS 8067H
Text: Using the SIO on the 8xC196MH Application Brief AB-71 December 2000 Order Number: 272594-002 Using the SIO on the 8xC196MH Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual
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8xC196MH
AB-71)
74AC165
iF80H-1FBFH
80C196NP
IF80H
8XC196MH
SF 119 D
AD7893
p210w0
LD 7576 OS
8067H
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bbc 598 479
Abstract: 918010 transistor d717 d717* transistor d717 transistor 80196 instruction set BBS 2202 DF08 928 01e3 bbc 598
Text: 80C196 MACRO ASSEMBLER UT131 01-Feb-2000 12:18:09 PAGE 80C196 macro assembler v6.0 r3 1 SN00085643-195 c 1998 TASKING, Inc. SOURCE FILE: dac_rism.a96 OBJECT FILE: dac_rism.obj CONTROLS SPECIFIED IN INVOCATION COMMAND: errorprint debug linedebug source cmain copyattr pagelength(45) pagewidth(120)
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80C196
UT131
01-Feb-2000
SN00085643-195
\C196\include)
UT131
UT131ECC
UT131.
00000113H
bbc 598 479
918010
transistor d717
d717* transistor
d717 transistor
80196 instruction set
BBS 2202
DF08 928
01e3
bbc 598
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OV 5693
Abstract: No abstract text available
Text: Revised Mar. 1998 JS9P09-AS 1. RF PERFORMANCE SPECIFICATIONS Ta= 25°C CHARACTERISTICS Output Power at ldB Compression Point Power Gain at ldB Compression Point Drain Current Power Added Efficiency SYMBOL CONDITION MIN. TYP. MAX. UNIT PldB 23.0 24.0 — dBm
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JS9P09-AS
254mm
OV 5693
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TA 7358 TOSHIBA
Abstract: T 9722
Text: Revised Mar. 1998 JS9P08-AS 1. RF PERFORMANCE SPECIFICATIONS Ta= 25°C CHARACTERISTICS Output Power at ldB Compression Point Power Gain at ldB Compression Point Drain Current Power Added Efficiency SYMBOL CONDITION MIN. TYP. MAX. UNIT 23.0 24.0 — dBm
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JS9P08-AS
O000000
254mm
TA 7358 TOSHIBA
T 9722
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Untitled
Abstract: No abstract text available
Text: Revised Mar. 1998 JS9P08-AS 1. RF PERFORMANCE SPECIFICATIONS Ta= 25°C CHARACTERISTICS Output Power at ldB Compression Point Power Gain at ldB Compression Point Drain Current Power Added Efficiency SYMBOL CONDITION MIN. TYP. MAX. UNIT 23.0 24.0 — dBm
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JS9P08-AS
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Untitled
Abstract: No abstract text available
Text: TOSHIBA Oct. 1997 TPM 1919-40-311 1. RF PERFORMANCE SPECIFICATIONS Ta= 25°C CHARACTERISTICS CONDITION SYMBOL Output Power at ld B MAX. UNIT MIN. TYP. 46.0 47.0 — dBm Compression Point PldB Power Gain at ldB Compression Point G ldB 12.0 13.0 — dB I ds
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170mA
TPM1919-40-3111
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947-75
Abstract: No abstract text available
Text: Oct. 1997 JS9P08-AS Draft 1 RF PERFORMANCE. SPECIFICATIONS CHARACTERISTICS O utput Powder at ldB Com pression Point Pow er Gain, at ldB Compression Point D rain C urrent Pow er Added Efficiency ( Ta= 2K°C 1 SYMBOL CONDITION MIN. TYP. M AX U N IT PldB 21.5 23.0 — dBm
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JS9P08-AS
-800faA
947-75
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Untitled
Abstract: No abstract text available
Text: Revised Mar. 1998 JS9P10-AS 1. RF PERFORMANCE SPECIFICATIONS Ta= 25°C CHARACTERISTICS Output Power atldB Compression Point Power Gain at ldB Compression Point Drain Current Power Added Efficiency SYMBOL CONDITION MIN. TYP. MAX. UNIT 23.0 24.0 — dBm
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JS9P10-AS
254mm
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Untitled
Abstract: No abstract text available
Text: Revised Mar. 1998 JS9P10-AS 1. RF PERFORMANCE SPECIFICATIONS Ta= 25°C CHARACTERISTICS Output Power atldB Compression Point Power Gain at ldB Compression Point Drain Current Power Added Efficiency SYMBOL CONDITION MIN. TYP. MAX. UNIT 23.0 24.0 — dBm
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JS9P10-AS
254mm
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER MMIC AMPLIFIER T P M 1 9 1 9 -6 0 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES • High Power Partially Matched Type PldB=48.0dBm at 1.96GHz ■ Hermetically Sealed Package High Power Gain GldB=13dB at 1.96GHz CHARACTERISTICS Output Power at ldB
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96GHz
96GHz
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER MMIC AMPLIFIER T P M 1 9 1 9 -6 0 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES • High Power Partially Matched Type PldB=48.0dBm at 1.96GHz ■ Hermetically Sealed Package High Power Gain G ldB=13dB at 1.96GHz CHARACTERISTICS SYMBOL
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96GHz
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cq 531
Abstract: cq 529 tpm1919 TPM1919-60
Text: TOSHIBA MICROWAVE POWER MMIC AMPLIFIER T P M 1 9 1 9 -6 0 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES • High Power Partially Matched Type PldB=48.0dBm at 1.96GHz ■ Hermetically Sealed Package High Power Gain GldB=13dB at 1.96GHz CHARACTERISTICS Output Power at ldB
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96GHz
300mA
cq 531
cq 529
tpm1919
TPM1919-60
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HN3C06F
Abstract: HN3C06
Text: SILICON NPN EPITAXIAL PLANAR TYPE HN3C06F Unit in mn VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. + 0.2 2.8-0.3 . Including Two Devices in SM6 Super Mini Type with + 0.2 1.6 6 Leads . Low Noise Figure, High Gain. - 0.1 ÌD 3 6 . NF=1.ldB, | S21e |2=12dB (f=lGHz)
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HN3C06F
SY11BOL
500HHz
500Hllz
HN3C06F
HN3C06
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HP 4514 v
Abstract: 1GG7-4201 hp 4514 1GG7
Text: What HEWLETT* mLliM PACKARD DC - 6 GHz Unterminated SPDT Switch Technical Data HMMC-2006 Features • Frequency Range: DC-6 GHz • Insertion Loss: <ldB @ 6G H z • Isolation: > 70 dB @ 45 MHz >35dB@ 6G H z • Return Loss: > 12 dB Both Input & Output • Sw itching Speed: < 1 ns
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HMMC-2006
27dBm
HMMC-2006
ossl11vs.
HP 4514 v
1GG7-4201
hp 4514
1GG7
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Untitled
Abstract: No abstract text available
Text: 1 Who HEWLETT mLriM P a c k a r d 2 - 8 GHz Medium Power Gallium Arsenide FE T Technical Data A TF-45101 Features • High Output Power: 29.0 dBm Typical Pi ¿ 3 at 4 GHz • High Gain a t ldB Compression: 10.0 dB Typical Gj ¿ 3 at 4 GHz • High Power Efficiency:
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TF-45101
ATF-45101
4447SÃ
0D17732
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Untitled
Abstract: No abstract text available
Text: mHHMPACKARD W tia i H E W L E T T 0 .5 - 6 GHz Low Noise Gallium Arsenide FET Technical Data ATF-21170 Features • Low Noise Figure: 0.9 dB Typical at 4 GHz • High A ssociated Gain: 13.0 dB Typical at 4 GHz • High Output Power: 23.0 dBm Typical P LdB at 4 GHz
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ATF-21170
ATF-21170
5965-8718E
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Ablebond 74-1
Abstract: 12L3 Z0 607 MN 53231 Ablebond 36-2
Text: What H EW LETT f t "KM P A C K A R D 6 -2 0 GHz Amplifier Technical Data HMMC-5618 Features • High Efficiency: 11% @ P.ldB Typical • Output Power, P ldB: 18 dBm Typical • High Gain: 14 dB Typical • F lat Gain Response: ±0.5 dB Typical • Low Input/Output VSWR:
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HMMC-5618
HMMC-5618
Ablebond 74-1
12L3
Z0 607 MN
53231
Ablebond 36-2
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Untitled
Abstract: No abstract text available
Text: Thal H E W L E T T mL'KM P A C K A R D 2 - 8 GHz Medium Power Gallium Arsenide FET Technical Data ATF-45171 F eatures • High Output Power: 29.0 dBm Typical Pt dB at 4 GHz • High Gain a t ldB Compression: 10.5 dB Typical Gj dB at 4 GHz • High Pow er Efficiency:
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ATF-45171
ATF-45171
base18
QD1773S
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201 429 HP
Abstract: ATF-21186 ATF-21186-STR ATF-21186-TR1 0840 057 GLDB0 ga 1112
Text: TAff% HEW LETT mLftM P A C K A R D 0 .5 - 6 GHz G eneral P urpose G allium A rsenide FET Technical Data ATF-21186 Features Description • Low N o ise Figure: 0.5 dB Typ. @ 2 GHz • H igh O utpu t Pow er: 19 dBm Typ. P ldB @ 2 GHz • H igh MSG: 13.5 dB Typ. @ 2 GHz
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ATF-21186
ATF-21186
Arse38
0G177Ã
5091-4862E
5965-8716E
201 429 HP
ATF-21186-STR
ATF-21186-TR1
0840 057
GLDB0
ga 1112
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LC75383E
Abstract: No abstract text available
Text: i s # 3 — KNo. N 5002A '*• / NO. 5002A 00296 SKHftB002 i ? L i ’i t B < l ï ? 1'1. LC75383E- LC7538äE i, X- CMOS LSI I r y j ^ 2j — -ffl'.Xtltyfex. Xt¡ U-sA- 3 > h o 3 > h D ~ iK - é í ') í> A fí)J , OdB~ -79d B (ldB X r -y7),_coff)81=K Vs U3
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LC75383E-
LC75383E
-79dB
-20dB(
-20dB~
-25dBtt5dBX
-25dB
LC7538BE
-20dB
7l00k
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F10G
Abstract: No abstract text available
Text: S EM IC O N D U C T O R KTC3770UL TECHNI CAL DATA EPI TAXI AL PLANAR NPN TRA NS IST OR V H F /U H F W ID E B A N D AMPLIF IE R A PPLICATIO N. FEATURES • Low Noise Figure, High Gain. • N F = l.ld B , |S2le|2= l ldB f=lG H z . M A X IM U M R AT IN G (Ta=25°C)
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KTC3770UL
100mm2)
IS12I
F10G
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Y152
Abstract: 6663p LC75396E D350 y-152
Text: FNo. N 5747 1 GGE LC75396E LC75396E». X U V A, A 7 > * , »f tf y 9 à • -f n-ÿ-f •*•' CMOS LSI > h V 3 7 -f ^ %'> l> 7 ^ : OdB— 79dB ldB ^ -r y ~ f , a >. L c h - 7 P > h /y 7 , B c h .7 n > W V T 4r^ 4 » Ä L /T : £/■?> K Ä 2 d B 7 .^ 'y ^± 1 0 d B © 3 > b D - ^ T ' t $
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N5747
LC75396EÂ
OdB--79dB
CC101ST0
LC75396E
O0095
Y152
6663p
LC75396E
D350
y-152
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