bcm 4330
Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min
Text: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?
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MXP80A-075-503-00
Abstract: MXA80 UFR41B DRL71 circuit diagram of 7.5 kVA power inverter 2.5 kva inverter diagrams XGS11A ttl/stegmann encoder AG
Text: Drive Technology \ Drive Automation \ System Integration \ Services System Manual MOVIAXIS Multi-Axis Servo Inverter Edition 09/2013 20062540 / EN SEW-EURODRIVE—Driving the world Contents Contents 1 System description . 7
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DOP11B
MXP80A-075-503-00
MXA80
UFR41B
DRL71
circuit diagram of 7.5 kVA power inverter
2.5 kva inverter diagrams
XGS11A
ttl/stegmann encoder AG
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Untitled
Abstract: No abstract text available
Text: SOT223 NPN SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTOR ISSUE 3 - OCTOBER 1995 FEATURES * Up to 5 Amps continuous collector current, up to 10 Amp peak * * FZT855 - Very low saturation voltage Excellent hFEspecified up to 10 Amps
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OT223
FZT855
FZT955
500mA*
-100mA,
50MHz
1-100mA
100mA,
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Untitled
Abstract: No abstract text available
Text: SIEMENS LD 261 LD 262—269/260 s in g l e d io d e arrays Infrared Emitters Dimensions in inches mm APPLICATIONS • Miniature photointerrupters • Punched tape-readers • Industrial electronics • For control and drive circuits DESCRIPTION The LD260-269 series, GaAs infrared emitting diodes,
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LD260-269
lE/lE100
OHR0I039
LD260-269
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REG5608
Abstract: No abstract text available
Text: B U R R - BROW N REG5608 LOW CAPACITANCE 18-Line SCSI ACTIVE TERMINATOR FEATURES DESCRIPTION • ACTIVE 18-Line TERMINATOR The REG5608 is a low capacitance 18-line active term inator for SCSI Small Computer Systems Interface parallel bus systems. On-chip resistors and
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REG5608
18-Line
REG5608
FAST-20
17313b5
ZZ324
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Untitled
Abstract: No abstract text available
Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1055A ISSUE 3 -JANUARY 1995_ — FEATURES * * * * - V ceo=120V 3 A m p continuous Current 6 A m p pulse Current Very Low Saturation Voltage APPLICATIONS *
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ZTX1055A
NY11725
3510Metroplaza,
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FZT869
Abstract: No abstract text available
Text: SOT223 NPN SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTOR FZT869 - ISSUE 2 - JANUARY 1996 FEATURES * Extremely low equivalent on-resistance; RCE(sat)36m ii at 5A * * * 7 Amp continuous collector current (20 Amp peak) Very low saturation voltages
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OT223
FZT869
ic-20
100mA.
50MHz
100mA
100mA,
300fis.
FZT869
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tanaka
Abstract: No abstract text available
Text: ñB JK ft 0ZI8E0PS REV. ’ON ONIMVHa ^SM m DATE 1O.Ma r.2004 2 DON w. n 054585 mDR.s ñ & DESCRIPTION NO. DELETE a % CHK. ITEMS H.TAKAHASH I %U $ 89 APPD. APPD. Ï.YAHIRo ? 8 0 «£- 5» A ciß a n CM V (.KBS. 2:1) S E C T . A □ □o
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KX15-*
L-E1000E
tanaka
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le100
Abstract: No abstract text available
Text: SOT223 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTORS ISSUE 3 - JANUARY 1996 BF720 BF722 FEATURES * High breakdown and low saturation voltages APPLICATIONS * Suitable fo r video ou tput stages in TV sets * Sw itching pow er supplies COMPLEMENTARY TYPES:PARTMARKING DETAILS:-
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OT223
BF720
BF721
BF722
BF723
BF722
-20mA,
le100
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LD271 APPLICATIONS
Abstract: IR LD271
Text: L 27t/H LD271L/HL SIEMENS 1" lea d s GaAs Infrared Emitter Dimensions in inches mm ,354(9.0) Surface not fla t- 10 (254) .024(0.6) 039 0 0) ' 0 ^ ° « ) :(g8(0.7f| T •0S1 ( l.s jÿ .071 (1.8)-Ci39(1.Q)y .047<1.2) Surface not flat .323 (8.2) >.307(7.8i
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27t/H
LD271L/HL
IT295
-Ci39
LD271/H
271HL
lE100mA
LD271/LD271L
LD271 APPLICATIONS
IR LD271
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P1y transistor
Abstract: No abstract text available
Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 3 -JANUARY 1995_ ' - ZTX1056A FEATURES * V c e o =1 6 0 V * 3 A m p C o n t in u o u s Current * 6 A m p P u lse Current * L o w Sa tu ra tio n V olta ge ABSOLUTE MAXIM UM RATINGS.
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ZTX1056A
P1y transistor
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BIPOLAR M 846
Abstract: 0/JL3281A
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IIP II M JL3281A* Designer's Data Sheet PNP M JL1302A* Com plem entary NPN-PNP Silicon Power Bipolar Transistor *M o torcia Preferred Devio* 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS • The MJL3281A and MJL1302A are PowerBase power transistors for high power
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JL3281A*
JL1302A*
MJL3281A
MJL1302A
BIPOLAR M 846
0/JL3281A
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Untitled
Abstract: No abstract text available
Text: SFH464 SIEMENS GaAIAs Infrared Emitter FEATURES • Radiation without IR in visible red range • Cathode electrically connected to case • Very high efficiency • High reliability • short switching time • Same package as BP 103, LD 242 • DIN humidity category per DIN 40040 GQG
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SFH464
18-pln
fl535t
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Untitled
Abstract: No abstract text available
Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 3 -FEBRUARY 95_ ZTX1051A _ _ _ FEATURES * Bcev=150V * Very Low Saturation Voltage * High Gain * Inherently Low Noise APPLICATIONS * Em ergency Lighting * Low Noise Audio
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ZTX1051A
R100MHz
lB-40mA,
100mA
0D11D3D
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Untitled
Abstract: No abstract text available
Text: SOT223 NPN SILICON PLANAR M EDIUM POWER HIGH GAIN TRANSISTOR FZT689B IS S U E 3 - O C T O B E R 1995 FEATURES * Gain of 400 at lc=2 A m p s and low saturation voltage * Extremely low equivalent on-resistance; RCE satl 92m£2 at 3 A A P P L IC A T IO N S *
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OT223
FZT689B
FZT789B
IC/IB-10Ã
11IJ/II
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GEX06306
Abstract: No abstract text available
Text: GaAIAs Infrared Emitter Dimensions in inches mm Surface not flat .024 (0 . 6 ) .016 (0 . 4) .100 (2 .54 ) .047(1 GEX06306 FEATURES • GaAIAs IR emitter made a liquid phase epitaxy process • Small tolerance: Chip surface to case surface • Good spectral match to silicon
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GEX06306
SFH203P
OHB00686
lE/lE100mA
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J335
Abstract: No abstract text available
Text: C 3 1 l IT M c i v E i c l u n swfrt ô p l é i S SFH 420 SMT SIDELED® SFH 425 e o GaAs Infrared Emitter Dimensions in inches mm .094 .118(3.0) .083 (2.1) :067 (1.7) J335 (0.9) .028(0.7) .165 (4.2) .149(3.8) .110(2.8 .094 (2.4 1 L "I Anode/ Emitter .134 (3.4)
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SFH425
GPL6880
GPL6724
SFH420
lE/lE100mA
SFH420/42S
J335
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sfh484
Abstract: No abstract text available
Text: LD274 SIEMENS GaAs Infrared Emitter Dimensions in inches mm Surface not flat .024(0.6) .016(0.4) J_ .100(2.54) 1-.071 (1.8) .047(1.2)" .224 (5.7) .200 (5.1) .031(0 , .016(0.4! T .232(5.9) .217(5.5)' i .200(5.1) .189(4.8) -4 LI f Cathode .024(0.6) .016(0.4)'
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LD274
QEX06260
Tac25
100mA,
/lE100
sfh484
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Untitled
Abstract: No abstract text available
Text: SFH483 SIEMENS FEATURES • Highly efficient GaAIAs LED • Anode electrically connected to case • High pulse power • High reliability • DIN humidity category per DIN 40040 GOG • Matches BPX63, BP103, LD242, SFH464, photodetectors • Package - TO -18,18 A3 DIN 41870
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SFH483
BPX63,
BP103,
LD242,
SFH464,
TcS25
E7800"
/lE100mA
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Untitled
Abstract: No abstract text available
Text: LD242 SIEMENS GaAs Infrared Emitter Dimensions in inches mm .141 (3.6) .571i (14.5)_ ( _ .492r o( í ? ) 0.100 (2.54) Áíiode 0 .018 (0.45) 106(2.7) GET06625 Crap Location FEATURES • GaAs infrared emitting diode, fabricated In a liquid phase epitaxy process
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LD242
GET06625
BP103,
BPX63,
SFH464,
SFH483
0HSD1S37
/lE100mA
0H801037
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Untitled
Abstract: No abstract text available
Text: Infrared Emitter Dimensions in Inches mm .204 (5.2) .17^ (4.5) .157(4.0) 141 (3.6) - 122(3 .1) " 114(2.9) ' .138 (3.5) .024 (.6) .016 (.4)' ^— Ctiip Position .248(6 .3) 1.140(g9) 1.061 (27) FEATURES • GaAs IR emitter made In a liquid phaae epitaxy process
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SFH309
SFH487,
100mA,
/lE100mA
SFH409
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