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    LH28F008SAT Price and Stock

    Sharp Microelectronics of the Americas LH28F008SAT-ZW

    IC FLASH 8MBIT PARALLEL 40TSOP
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    Sharp Microelectronics of the Americas LH28F008SAT-85

    IC FLASH 8MBIT PARALLEL 40TSOP
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    Sharp Microelectronics of the Americas LH28F008SAT85

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    LH28F008SAT Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    LH28F008SAT Sharp 8 MBIT(1 MBIT x 8) FLASH MEMORY Original PDF
    LH28F008SAT-12 Sharp 8M (1M x 8) Flash Memory Original PDF
    LH28F008SAT-85 Sharp Flash Memory 8M (1MB x 8) Original PDF
    LH28F008SAT-85 Sharp 8M Flash Memory Original PDF
    LH28F008SAT-85 Sharp 8M Flash Memory Original PDF
    LH28F008SAT-85 Sharp Flash Memory Scan PDF
    LH28F008SAT-90 Sharp EEPROM Parallel Async Original PDF
    LH28F008SAT-K85 Sharp 8M Flash File Memory Original PDF
    LH28F008SAT-K85 Sharp 8M Flash File Memory Scan PDF

    LH28F008SAT Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    etox

    Abstract: LH28F008SAT-85 LHF08S49
    Text: PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F008SAT-85 8M Flash Memory Model No.: LHF08S49 Spec No.: EL105017 Issue Date: August 31, 1998 LH28F008SAT-85, FLASH MEMORY, FLASH, NON-VOLATILE MEMORY, FLASH ROM READ ONLY MEMORY, ETOX, 8 Mb SPECIFICATIONS ARE SUBJECT TO CHANGE WITHOUT NOTICE.


    Original     		LH28F008SAT-85 LHF08S49) EL105017 LH28F008SAT-85, etox LH28F008SAT-85 LHF08S49 PDF

    lh28f800bvhe-tv85

    Abstract: LH28F128BFHED LH28F128BFHED-PWTL90 LH28F160S5HNS-L70 LH5116H-10 LH28F160S3HNS-L10 lh28f128bfht-pw LH28F320S5HNS-L90 LH28F008BJT-BTLZ1 Product Selector Guide
    Text: Memory Product Selector Guide SYMMETRICAL FLASH DENSITY PRODUCT FAMILY ORG. PART NUMBER PACKAGE READ VOLTAGE PROGRAM VOLTAGE LH28F008SCT-L85 LH28F008SCHT-L85 LH28F008SCT-L12 3 V or 5 V 40TSOP LH28F008SAT-85 5V LH28F008SAHT-85 8M Cobra x8 3 V, 5 V or 12 V


    Original     		LH28F008SCT-L12 40TSOP LH28F008SAT-85 LH28F008SAHT-85 LH28F008SAN-85 LH28F008SAN-12 44SOP LH28F008SCHT-L85 LH28F008SCT-L85 lh28f800bvhe-tv85 LH28F128BFHED LH28F128BFHED-PWTL90 LH28F160S5HNS-L70 LH5116H-10 LH28F160S3HNS-L10 lh28f128bfht-pw LH28F320S5HNS-L90 LH28F008BJT-BTLZ1 Product Selector Guide PDF

    LH28F008SAT-85

    Abstract: LHF08S49
    Text: PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F008SAT-85 8M Flash Memory Model No.: LHF08S49 Spec No.: EL105017 Issue Date: August 31, 1998 LH28F008SAT-85, FLASH MEMORY, FLASH, NON-VOLATILE MEMORY, FLASH ROM READ ONLY MEMORY, ETOX, 8 Mb


    Original     		LH28F008SAT-85 LHF08S49) EL105017 LH28F008SAT-85, LH28F008SAT-85 LHF08S49 PDF

    LH28F008SAT-K85

    Abstract: No abstract text available
    Text: LH28Fxxx FLASH MEMORY FLASH NON-VOLATILE MEMORY FLASH E2ROM FLASH ROM READ ONLY MEMORY ETOX LH28F008SAT-K85 8M 1Mx8 Dual Voltage


    Original     		LH28Fxxx LH28F008SAT-K85 PDF

    LH28F008SA

    Abstract: LH28F008SAT-85 LHF08S49 80386SL
    Text: PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F008SAT-85 Flash Memory 8M 1MB x 8 (Model No.: LHF08S49) Spec No.: EL105017A Issue Date: October 5, 1999 sharp LHF08S49 ●Handle this document carefully for it contains material protected by international


    Original     		LH28F008SAT-85 LHF08S49) EL105017A LHF08S49 LH28F008SA LH28F008SAT-85 LHF08S49 80386SL PDF

    LH28F128SPHTD-PTL12

    Abstract: 56TSOP lh28f800bvhe-tv85 lh5116h10 LH28F320SKTD-L70 LRS1826A TV85 LH28F008SC LH28F160S5T-L70A LH52256CHN-70LL
    Text: Memory Product Selector Guide 8M AND 16M SYMMETRICAL FLASH DENSITY ORG. PART NUMBER PACKAGE READ VOLTAGE PROGRAM VOLTAGE LH28F008SCT-L85 LH28F008SCHT-L85 LH28F008SCT-L12 3 V or 5 V 40TSOP LH28F008SAT-85 x8 85 I 120 C 85 C 85 I 85 C 120 C 12 V LH28F008SCN-L85


    Original     		LH28F008SCHT-L85 LH28F008SCT-L12 40TSOP LH28F008SAT-85 LH28F008SCT-L85 LH28F008SCN-L85 LH28F008SAR-85 LH28F008SAHT-85 LH28F008SAN-85 ID242K01 LH28F128SPHTD-PTL12 56TSOP lh28f800bvhe-tv85 lh5116h10 LH28F320SKTD-L70 LRS1826A TV85 LH28F008SC LH28F160S5T-L70A LH52256CHN-70LL PDF

    LH28F640BFHE-PBTLDY

    Abstract: lh28f320s5hns-zp LH28F160S5T-L70A LH28F016 LH28F008SAT-ZW lh5116na-10 LH28F640BFHE-PBTL90 LH5164A-10L LH5164AN-80L lh5116-10
    Text: Product Change Notice PCN : Lead (Pb)–free Packages October 15, 2004 This document updates PCN: ST-03-Z-06E issued January 23, 2004. Objective: Existing Memory ICs are changing from a lead (Pb) process to a lead-free process. Process Change Key Points 1) SHARP is changing the lead plating process from lead (Pb) to lead-free to meet the demands


    Original     		ST-03-Z-06E connectiH5116D-10F LH5116H-10F LH5116NA-10F LH5164A-10LF LH5164AD-10LF LH5164AHN-10LF LH516AN0 LH28F640BFHE-PBTLDY lh28f320s5hns-zp LH28F160S5T-L70A LH28F016 LH28F008SAT-ZW lh5116na-10 LH28F640BFHE-PBTL90 LH5164A-10L LH5164AN-80L lh5116-10 PDF

    HD637B01VOP

    Abstract: HD63701VOP HD63705VOP hd63701xop HD637A01VOP HD64F3048F16 MB8516 HD637B01YOP HD63701YOP lh57257
    Text: ＡＦ−９７００ ＳＥＲＩＥＳ ＤＥＶＩＣＥ ＬＩＳＴ ＡＦ−９７０４ ＥＰＲＯＭ ＡＦ−９７０５ ＭＯＳ ＡＦ−９７０６ ＥＰＲＯＭ ＡＦ−９７０７ ＰＣ ＡＦ−９７２１ ＧＡＮＧ ＰＲＯＧＲＡＭＭＥＲ


    Original     		AF-9700 24DIP 28DIP HD637B01VOP HD63701VOP HD63705VOP hd63701xop HD637A01VOP HD64F3048F16 MB8516 HD637B01YOP HD63701YOP lh57257 PDF

    LH28F320S5HNS-ZP

    Abstract: LH28F160S3HT-TF LH28F008SAT-ZW LH28F016SCT-ZR LH28F160S5HNS-S1 LH28F640SPHT-PLTZ8 LH28F320S3HNS-ZM lh28f008sat LH28F160S5HT-TW 0.35Um
    Text: Product Change Notification Type of Notification: Product Discontinuance ISSUE DATE LAST BUY DATE NOTIFICATION NO. LAST SHIP DATE December 1st, 2005 August 31st, 2006 PCN-20051201-1 November 30th, 2006 This is to advise you that the following products have been discontinued.


    Original     		PCN-20051201-1 LH28F008SA LH28F008SAT-ZW) LH28F008SC LH28F008SCHT-TE) LH28F016SC LH28F016CT-ZR) LH28F160S3 LH28F160S3HNS-TV) LH28F160S5 LH28F320S5HNS-ZP LH28F160S3HT-TF LH28F008SAT-ZW LH28F016SCT-ZR LH28F160S5HNS-S1 LH28F640SPHT-PLTZ8 LH28F320S3HNS-ZM lh28f008sat LH28F160S5HT-TW 0.35Um PDF

    lh28f008sat

    Abstract: LH28F008SA 386SL E0000 8F008 LH28F008SA-85
    Text: LH28F008SA • High-Density Symmetrically Blocked Architecture – Sixteen 64K Blocks • Extended Cycling Capability – 100,000 Block Erase Cycles – 1.6 Million Block Erase Cycles per Chip • Automated Byte Write and Block Erase – Command User Interface


    Original     		LH28F008SA 44-Lead 40-Lead lh28f008sat LH28F008SA 386SL E0000 8F008 LH28F008SA-85 PDF

    MSP14LV160

    Abstract: MSP54LV100 MCF10P-128MS 70f3350GC 63a52 95f264k HY27US08121B MSP55LV128 MSP55lv512 fujitsu msp55lv512
    Text: ＤＥＶＩＣＥ ＬＩＳＴ ＡＦ９７０８ ＦＬＡＳＨ ＰＲＯＧＲＡＭＭＥＲ ＡＦ９７０９ ＦＬＡＳＨ ＰＲＯＧＲＡＭＭＥＲ ＡＦ９７０９Ｂ ＦＬＡＳＨ ＰＲＯＧＲＡＭＭＥＲ


    Original     		AF9708/09/09B/10/23 nearest09 AF9709B/09C AF9723 AF9708 TE004-44PL-04 AF9709 MSP14LV160 MSP54LV100 MCF10P-128MS 70f3350GC 63a52 95f264k HY27US08121B MSP55LV128 MSP55lv512 fujitsu msp55lv512 PDF

    lh28f008sat

    Abstract: 82360SL 44-PIN E0000 LH28F008SA 80386SL 80386SL microprocessor features
    Text: LH28F008SA FEATURES 8M 1M x 8 Flash Memory 40-PIN TSOP TOP VIEW • Very High-Performance Read – 85 ns Maximum Access Time • High-Density Symmetrically Blocked Architecture – Sixteen 64K Blocks • Extended Cycling Capability – 100,000 Block Erase Cycles


    Original     		LH28F008SA 40-PIN J63428 SMT96105 lh28f008sat 82360SL 44-PIN E0000 LH28F008SA 80386SL 80386SL microprocessor features PDF

    lh28f320bjd

    Abstract: AF-9706 SDP-UNIV-48TS 1E07AA LH28F320BJD-TTL 1E08AB AF-9708 AF9708 AF-9845 ALL-11
    Text: June/18/2002 Programmer Support for SHARP Flash Memory * As regards the detailed product information of programmer vendors, please inquire at each vendor. SHARP takes no responsibility for products, services and assurances by programmer vendors. Please take notice that some of discontinued product are still shown in this document.


    Original     		June/18/2002 LH28F640BFHE-PBTLZF LRS1393 LRS1395 LRS1827 LRS1B09 LRS1B11 LRS1B121 AF9834 Y-1000 lh28f320bjd AF-9706 SDP-UNIV-48TS 1E07AA LH28F320BJD-TTL 1E08AB AF-9708 AF9708 AF-9845 ALL-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: MEMORIES ★ Under developm ent lal-Power-Supply Flash Mem ories Capacity 8M 16M Configuration Erase Mock size wordsxbits (bytes) 1M 2M 1M X 8 16 X Access time (ns) MAX. Supply voltage LH28F008SAT/R/N-85 85 Vcc = 5 V LH28F008SAT/R/N-12 120 Vpp = 12 V ★LH28F008SAT/R/B-KF85


    OCR Scan     		LH28F008SAT/R/N-85 LH28F008SAT/R/N-12 LH28F008SAT/R/B-KF85 LH28F008SAT/R/B-KF12 40TSOP /44SO 40TSO /42FB PDF

    Untitled

    Abstract: No abstract text available
    Text: a WPF29041-120G1XX WHITE /M ICROELECTRONICS 4MBYTE 1Mx32 FLASH (5VSupply; 12V Program) S IM M MODULE p r e lim in a r y * FEATURES GENERAL DESCRIPTION • Access Tim e of 120ns The W h ite M icroelectronics WPF29041-120G1XX is a 1M x 32 bits ■ 80-pin Flash Single In-line M em ory M odule (SI M M ). The WPF29041-


    OCR Scan     		WPF29041-120G1XX 1Mx32) 120ns WPF29041-120G1XX 80-pin WPF29041- 120G1XX WPF29081-120G1XX PDF

    Untitled

    Abstract: No abstract text available
    Text: 8M 1M x 8 Flash Memory • High-Density Symmetrically Blocked Architecture - Sixteen 64K Blocks • Extended Cycling Capability - 100,000 Block Erase Cycles - 1.6 Million Block Erase Cycles per Chip • Automated Byte Write and Block Erase - Command User Interface


    OCR Scan     		44-Lead 40-Lead LH28F008SA DD1SS63 LH28F008SA PDF

    Untitled

    Abstract: No abstract text available
    Text: SHARP February 1997 FLASH MEMORY LH28F008SAHR-85 Ver. 2.0E SHARP CORPORATION Engineering Department 2 Flash Memory Development Center Tenri Integrated Circuits 1C Group I L HF 0 8 S 1 6 1 CONTENTS 1 FEATURES 2 2 PRODUCT OVERVIEW 3 3 PRINCIPLES OF OPERATION


    OCR Scan     		LH28F008SAHR-85 PDF

    LQ070T5BG01

    Abstract: LM24P20 LM162KS1 BSCR86L00 IR2C07 LM5Q31 IR3Y29B BSCU86L60 lq6bw lq6bw506
    Text: INDEX 1 0 4 - 1 0 9 _ DC_ GL1PR112.69 GL3KG63. 66 GL5EG41.66 1 0 4 - n 0 5 O o c .113 DC1B1CP. 100 GL1PR135.69 GL3KG8. 66


    OCR Scan     		109-n GL1PR112. GL1PR135. GL1PR136. GL1PR211. GL1PR212. GL3KG63. GL3P201. GL3P202. GL3P305. LQ070T5BG01 LM24P20 LM162KS1 BSCR86L00 IR2C07 LM5Q31 IR3Y29B BSCU86L60 lq6bw lq6bw506 PDF

    386SL

    Abstract: E0000 LH28F008SA LH28F008SAT-85 LHF08S49
    Text: P l« m T S M < 1 1 1 C W i\S liuca;io.l Iranf- Croup LH28FD08SAJ-85 8M Rash Memory (Model No.: LHF08S49 Spec No.: EL105017 Issue Date: August 31, 1998 SHARP LHF08S49 • H a n d le this document carefully for it contains material protected by international


    OCR Scan     		LH28F008SAT-85 LHF08S49) BJ05017 LHF08S49 386SL E0000 LH28F008SA LH28F008SAT-85 PDF

    80386SL microprocessor features

    Abstract: 82360SL 80386sl intel 80386SL AH 36
    Text: I LHF 0 8 S 1 6 LH28F008SAHR-85 8 MBIT 1 MBIT x 8 FLASH MEMORY 1. FEATURES •High-Density Symmetrically Blocked Architec­ ture - Sixteen 64 KByte Blocks • Very High-Performance Read - 85 ns Maximum Access Time • SRAM-Compatible Write Interface •Extended Cycling Capability


    OCR Scan     		LH28F008S 40-Lead 80386SL microprocessor features 82360SL 80386sl intel 80386SL AH 36 PDF

    28F008SA

    Abstract: E28F008SA LH28F008SAT
    Text: a H/HITE /MICROELECTRONICS WPF29041-120G1XX 4MBYTE 1Mx32 FLASH (5VSupply; 12V Program) SIM M MODULE p r e l im in a r y * FEATURES GENERAL DESCRIPTION • Access Tim e of 120ns The W h ite M icroelectronics WPF29041-120G1XX is a 1 M x 3 2 bits ■ 80-pin Flash Single In-line M em ory M odule(SIM M).TheW PF29041-


    OCR Scan     		WPF29041-120G1XX 1Mx32) 120ns WPF29041-120G1XI E28F008SA WPF29041 -120G1XS LH28F008SAT WPF29041-120G1XX 80-pin 28F008SA E28F008SA LH28F008SAT PDF

    odq1

    Abstract: No abstract text available
    Text: a WPF29160-120G1XX WHITE /MICROELECTRONICS 16MBYTE 4x1Mx32 FLASH (5VSupply; 12V Program) SIMM MODULE PRELIM INARY * FEATURES GENERAL DESCRIPTION • Access Tim e of 120ns The W h ite M icroelectronics W PF29160-120G1XX is a 4 x 1M x 3 2 ■ Packaging: bits 80-pin Flash Single In-line M em ory M odule (SIM M ). The


    OCR Scan     		WPF29160-120G1XX 16MBYTE 4x1Mx32) 120ns PF29160-120G1XX 80-pin 40-pin WPF29160-120G1XX odq1 PDF

    56TSOP

    Abstract: LH28F020SUT LH28F032SUTD-10 LH28F016SAT
    Text: MEMORIES • Flash Memories Capacity Configuration Erasable block size bytes (words x bits) Model No. Accees time (ns) MAX. Supply voltage (V) ★LH28F020SUT/N-N60 60 Vcc=5 ★LH28F020SUT/N-N80 80 Vpp=5 Read current (mA)MAX. Operating temperature (1C) Package


    OCR Scan     		40TSOP /44SOP 56TSOP 64k/32k/16k LH28F020SUT/N-L12 LH28F020SUT/N-L15 LH28F004SUT-N60 LH28F004SUT-N80 LH28F004SUT-L12 LH28F004SUT-L15 LH28F020SUT LH28F032SUTD-10 LH28F016SAT PDF

    55B0

    Abstract: No abstract text available
    Text: 8M 1M X 8 Flash Memory • High-Density Symmetrically Blocked Architecture - Sixteen 64K Blocks • Extended Cycling Capability - 100,000 Block Erase Cycles - 1.6 Million Block Erase Cycles per Chip • Automated Byte Write and Block Erase - Command User Interface


    OCR Scan     		44-Lead 40-Lead DD1SS62 LH28F008SA 44-pin 40-pin 55B0 PDF