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    LH28F016LL Search Results

    LH28F016LL Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    LH28F016LL Sharp 16M (1M x 16, 2M x 8) Flash Memory Original PDF
    LH28F016LLT-10 Sharp EEPROM Parallel Async Scan PDF
    LH28F016LLT-12 Sharp LH28F016LLT-12 16M (1M x 16,2M x 8) Flash Memory 56pin TSOP Original PDF
    LH28F016LLT-15 Sharp LH28F016LLT-15 16M (1M x 16,2M x 8) Flash Memory 56pin TSOP Original PDF

    LH28F016LL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    56-PIN

    Abstract: LH28F016LL LH28F016SU camera with iCCD matrix BSR10
    Text: LH28F016LL FEATURES • User-Configurable x8 or x16 Operation • 3 V Write/Erase Operation 3 V VPP – 2.7 - 3.6 V Write-Erase Operation • 120 ns Maximum Access Time (VCC = 3.0 V) • 150 ns Maximum Access Time (VCC = 2.7 V) • • • • 16M (1M x 16, 2M × 8) Flash Memory


    Original
    PDF LH28F016LL 56-PIN J63428 SMT96120 LH28F016LL LH28F016SU camera with iCCD matrix BSR10

    etox

    Abstract: 5ses LH28F008SA LH28F016SU 150NSEC BSR10
    Text: SHARP F e b ru a ry 1 9 9 6 FLASH MEMORY LH28F016LLT-xx SHARP CORPORATION N O TIC E • This publication is the proprietary product of Sharp and is copyrighted, with all rights reserved. Under the copy­ right laws, no part of this publication may be reproduced or transmitted in any form or by any means, electronic or


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    PDF LH28F016LLT-xx LH28F016LLT etox 5ses LH28F008SA LH28F016SU 150NSEC BSR10

    D1553

    Abstract: 3100-CC
    Text: SHARP LH28F016LLT 16 MBIT 1 MBIT x 16, 2 MBIT x 8 3V SINGLE VOLTAGE FLASH MEMORY FEATURES • 3V Write/Erase Operation (3V Vpp) - 2.7V-3.6V Write»Erase»Read Operation • User-Configurable x8 or x16 Operation • 120 ns Maximum Access Time (Vcc=3.0V) • 150ns Maxumam Access Time (Vcc=2.7V)


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    PDF LH28F016LLT 150ns 56-Lead, LH28F016SU 16-Mbit LH28F016LLT 001555b D1553 3100-CC

    Untitled

    Abstract: No abstract text available
    Text: MEMORES ★ U n d e r d e v e lo p m e n t 5 V Single-Pow er-Supply Flash Mem ories Capacity 2M Configuration Erase block *. 1- • size HOfdSXDItS {bytes} 256k x 8 16k 5 12 k x 8 Model No. Access time (nsi MAX. ★LH28F020SUT/N-N60 60 V cc = 5 V * LH28F020SUT/N-N80


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    PDF LH28F020SUT/N-N60 LH28F020SUT/N-N80 LH28F020SUHT/N-N80 LH28F004SU T-NF60 LH28F004SUT-NF80 LH28F008SCT/R/N/B-LF12 LH28F008SCHT/R/N/B-F85 LH28F008SCHT/R/N/B-F12 LH28F008SCHT/R/N/B-LF85

    Untitled

    Abstract: No abstract text available
    Text: MEMORIES ★ Under development Supply voltage r a n a r it u L.dpacixy Operating temp. Configuration Erase block Wordsxbits size (bytes) Model No. Access time(ns) -—- 1 8M 1M x 8 64k LH28F008SAH - 40 to 85 5 V/12 V-Dualpower-supply - 25 to 8 5 - >★LH28F008SAH-KF


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    PDF LH28F008SAH LH28F008SAH-KF LH28F016SA LH28F020SU-L LH28F020SUH-L LH28F004SU-LF LH28F004SUH-LF} LH28F400SU-LF 256kx LH28F400SUH-LF

    bsh7

    Abstract: f b t bsh7
    Text: SHARP SHARP LHF16L01 • H a n d le this document carefully for it contains material protected by international copyright law. Any reproduction, full or in part, of this material is prohibited without the express written permission of the company, # W h e n using the products covered herein, please observe the conditions written herein


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    PDF LHF16L01 AAU15 LHF16L0 CV734 LH28F016LL LH28F016LL CD43-1 CH182C223KK F/25V bsh7 f b t bsh7

    IR2E27A

    Abstract: IR2C53 IR2E02 IR2E27 IR2E10 IR3N34 IR2E31A IR2E01 IR2C07 ir2e31
    Text: lndeX Model No. ARM7D CPU Core28,32,33 ARM7DM 28,33 CMOS CMOS CMOS CMOS 76 5A A F G 44 44 44 44 ID1 series ID2 series ID3 seríes ID21K064 ID21K128 ID21K256 ID21K512 ID21M010 ID21M015 ID21M020 ID21M040 ID22K256 ID22K512 ID22M010 ID22M020 ID22M040 ID22M080


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    PDF Core28 IR2C24A/AN IR2C26 IR2C30/N IR2C32 IR2C33 IR2C34 IR2C36 IR2C38/N IR2C43 IR2E27A IR2C53 IR2E02 IR2E27 IR2E10 IR3N34 IR2E31A IR2E01 IR2C07 ir2e31

    BA 6688 L

    Abstract: No abstract text available
    Text: 16M 1M FEATURES • 120 ns Maximum Access Time (VCC= 3 .0 V • 150 ns Maximum Access Time (VCC= 2 .7 V ) • 0.48 MB/sec Write Transfer Rate • 100,000 Erase Cycles per Block T O P V IE W -s 56 □ W P C E ,Z 2 55 □ W E LXZ 3 54 □ ÔË A 20 z


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    PDF LH28F016SU 56-Pin, J63428 T96120 BA 6688 L