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    transistor GW 93 H

    Abstract: 100-PIN
    Text: LH51V1032C4 PRELIMINARY 32K x 32 Pipelined Burst SRAM +3.3 V Supply, Fully Registered Inputs, Outputs, and Burst Counter FEATURES FUNCTIONAL DESCRIPTION • Fast Access Times: 8 and 9 ns The Sharp Synchronous SRAM family employs highspeed, low-power CMOS designs using a thin-film transistor memory cell. Sharp SRAMs are fabricated using


    Original     		PDF LH51V1032C4 100TQFP 100-pin LH51V1032C4-15 51V1032C4-11 transistor GW 93 H

    UM61256AK-15

    Abstract: UM61256ak sram um61256ck-20 HY62256ALP10 XL93LC46AP w24m257 GVT7164D32Q-6 km62256blg-7 w24m257ak-15 UM61256
    Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM FLASH MICROCONTROLLER SERIAL FLASH JULY 1998 Integrated Silicon Solution, Inc. CP005-1E 7/1/98 1 ISSI CROSS REFERENCE GUIDE


    Original     		PDF CP005-1E AS7C1024-12JC AS7C1024-12PC AS7C1024-12TJC AS7C1024-12TPC AS7C1024-15JC AS7C1024-15PC AS7C1024-15TJC AS7C1024-15TPC AS7C1024-20JC UM61256AK-15 UM61256ak sram um61256ck-20 HY62256ALP10 XL93LC46AP w24m257 GVT7164D32Q-6 km62256blg-7 w24m257ak-15 UM61256

    um61256ak-15

    Abstract: w24m257ak-15 um61256 um61256ck-20 um61256ak-12 km62256blg-7 KM68257Bp-20 W24M257AK HY6264ALP-10 w24M257
    Text: ISSI Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM/NVM Serial EEPROM EPROM FLASH Static RAM SEPTEMBER 1996 CROSS REFERENCE GUIDE E2PROM ATMEL ISSI MIL PACKAGE SYMBOL PC P SC G SC GR AT93C46-10PC AT93C46-10PC-2.7 AT93C46-10SC AT93C46-10SC-2.7


    Original     		PDF AT93C46-10PC AT93C46-10PC-2 AT93C46-10SC AT93C46-10SC-2 AT93C46R-10SC AT93C46R-10SC-2 AT93C46W-10SC AT93C46W-10SC-2 AT93C56-10PC AT93C56-10PC-2 um61256ak-15 w24m257ak-15 um61256 um61256ck-20 um61256ak-12 km62256blg-7 KM68257Bp-20 W24M257AK HY6264ALP-10 w24M257

    LQ070T5BG01

    Abstract: LM24P20 LM162KS1 BSCR86L00 IR2C07 LM5Q31 IR3Y29B BSCU86L60 lq6bw lq6bw506
    Text: INDEX 1 0 4 - 1 0 9 _ DC_ GL1PR112.69 GL3KG63. 66 GL5EG41.66 1 0 4 - n 0 5 O o c .113 DC1B1CP. 100 GL1PR135.69 GL3KG8. 66


    OCR Scan     		PDF 109-n GL1PR112. GL1PR135. GL1PR136. GL1PR211. GL1PR212. GL3KG63. GL3P201. GL3P202. GL3P305. LQ070T5BG01 LM24P20 LM162KS1 BSCR86L00 IR2C07 LM5Q31 IR3Y29B BSCU86L60 lq6bw lq6bw506

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY 32K x 32 Pipelined Burst SRAM +3.3 V Supply, Fully Registered Inputs, Outputs, and Burst Counter FEATURES FUNCTIONAL DESCRIPTION • Fast Access Times: 8 and 9 ns The Sharp Synchronous SRAM family employs high­ speed, low-power CMOS designs using a thin-film tran­


    OCR Scan     		PDF 100-pin DES10. LH51V1032 LH51V1032C4 100TQFP TQFP-1OO-P-1420) LH51V1032C4

    lh5168

    Abstract: No abstract text available
    Text: MEMORIES Static RAMs ★ Under development P ro ce ss C a p a c ity C o n fig u ra tio n Model No. A c c e s s tim e n s 70 80 90 100 120 LH5116 2k X 8 16k LH51116H Operating temperature : - 40 to 8 5 t IUUU "O LH5116S Supply voltage : 3 V±10% LH5168 Full


    OCR Scan     		PDF LH5116 LH51116H LH5116S LH5168 LH5168H LH5168V LH5168S LH5168SH LH5164AH 5164AV

    5268A

    Abstract: 28-SOP LH521002AK-2S 28SOP LH52256CVN
    Text: MEMORIES S tatic RAMs Process Capacity Configuation words Xbits 2k 16k 8 X Access time Supply current ns) MAX. Cycle time Operating, Standby (ns) MIN. !mA) MAX. (mA) MAX. Model No. Supply Operating voltage temp. 0C) m i i LH 5116/NA/D-10 100 40 0.001 5 ± 10%


    OCR Scan     		PDF 5116/NA/D-10 LH5116H/HN/HD-10 LH5116SN LH5164A/AN-80L LH5164A /AT-10L 24DIP/24SOP/24SK-DIP 24SOP 28SOP/ 5268A 28-SOP LH521002AK-2S 28SOP LH52256CVN

    LH521007AK-20

    Abstract: No abstract text available
    Text: STATIC RAM ☆ New product ★ Under development STATIC RAMs ♦ Features • The product lineup includes a wide variety of bit configurations x4, x8, x l6 , x l8 , x32 . • High-speed synchronous devices for the secondary cache memory are available for use with low-voltage, lowpower CPUs idpal for portable equipment.


    OCR Scan     		PDF LH5116SN LH5164AVN/AVT LH5164AV3HN 24SOP 28S0P/28TS0P LH5268A/AN/AD-1 52256C -70LIÆ 710LL LH521007AK-20

    IR2E27A

    Abstract: IR2C53 IR2E02 IR2E27 IR2E10 IR3N34 IR2E31A IR2E01 IR2C07 ir2e31
    Text: lndeX Model No. ARM7D CPU Core28,32,33 ARM7DM 28,33 CMOS CMOS CMOS CMOS 76 5A A F G 44 44 44 44 ID1 series ID2 series ID3 seríes ID21K064 ID21K128 ID21K256 ID21K512 ID21M010 ID21M015 ID21M020 ID21M040 ID22K256 ID22K512 ID22M010 ID22M020 ID22M040 ID22M080


    OCR Scan     		PDF Core28 IR2C24A/AN IR2C26 IR2C30/N IR2C32 IR2C33 IR2C34 IR2C36 IR2C38/N IR2C43 IR2E27A IR2C53 IR2E02 IR2E27 IR2E10 IR3N34 IR2E31A IR2E01 IR2C07 ir2e31

    100 10L AD

    Abstract: LH521007AK-25 LH5168ST LH5168SHN lh5168 LH521002AK20
    Text: MEMORIES • S ta tic R A M s Process Capacity ★ U nderdevelopm ent Configuration words Xbits Model No. Access tim e Supply current (ns) MAX. Cycle time operating/standby ImA) MAX. (ns) MIN. Supply voltage (V) Operating temperature (1C) Package LH5116/NA/D-10


    OCR Scan     		PDF LH5116/NA/D-10 100LQFP H/AHN/AHD/AHT-10L LH5164AVN/AVT LH5164AVHN/AVHT LH5164ASHN/ASHT LH51256/N-10L LH51V1032C4M-15 LH51V1032C4M-17 LH5268A/AN/AD-1 100 10L AD LH521007AK-25 LH5168ST LH5168SHN lh5168 LH521002AK20

    transistor GW 93 H

    Abstract: "32K x 32" SRAM
    Text: LH 5 1 V 1032 C 4 PRELIMINARY 32K X 32 Pipelined Burst SRAM +3.3 V Supply, Fully Registered Inputs, Outputs, and Burst Counter FEATURES FUNCTIONAL DESCRIPTION • Fast Access Times: 8 and 9 ns The Sharp Synchronous SRAM family employs high­ speed, low-power CMOS designs using a thin^ilm tran­


    OCR Scan     		PDF LH51V1032C4 LH51V1032 LH51V103204 100TQFP TQFP-1OO-P-1420) 100-pin LH51V1032C4-15 transistor GW 93 H "32K x 32" SRAM