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    40-pin EPROM pinout

    Abstract: No abstract text available
    Text: LH53H1000 PRELIMINARY CMOS 1M 64K x 16 Mask Programmable ROM FEATURES • 65,536 x 16 bit organization • Access time: 55 ns (MAX.) • Power consumption: Operating: 660 mW (MAX.) Standby: 440 mW (MAX.) DESCRIPTION The LH53H1000 is a high speed mask programma­


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    LH53H1000 LH53H1000 40-pin, 600-mil 525-mil 40-PIN LH53J-11000 40-pin EPROM pinout PDF

    sharp lh531

    Abstract: sharp mask rom 40-pin sharp mask rom
    Text: PRELIMINARY L H 5 3 H 1 CMOS 1M 64K x 16 Mask-Programmable ROM FEATURES DESCRIPTION • 65,5 3 6 x 16 bit organization • Access time: 55 ns (M AX.) The LH53H1000 is a high speed mask-programma­ ble ROM organized as 65,536 x 16 bits (1,048,576 bits). It is fabricated using silicon-gate CMOS process tech­


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    LH53H1000 40-pin, 600-m 525-m 40-PIN LH53H1000 LH531--11000 sharp lh531 sharp mask rom 40-pin sharp mask rom PDF

    sharp mask rom 40-pin

    Abstract: 40-pin EPROM pinout
    Text: LH53H1000 PRELIMINARY CMOS 1M 64K x 16 Mask-Programmable ROM DESCRIPTION FEATURES • 65,536 • Access time: 55 ns (MAX.) • Power consumption: Operating: 660 mW (MAX.) Standby: 440 mW (MAX.) • • • x 16 bit organization Fully-static operation TTL compatible I/O


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    LH53H1000 40-pin, 600-mil 525-mil LH53H1000 40-PIN LH53IH1000 I-------55 sharp mask rom 40-pin 40-pin EPROM pinout PDF

    z3 IB

    Abstract: No abstract text available
    Text: b H A R P /f T v y y- SPEC Na 1 MRS 4 X 1 1 Oct. 19 1394 I SSUE: To IP R E L I M I N A R Y S P E C I F I C A T I ONS Li Product Type 1M b I t L H lo d a i Ko. 5 i * Ma s k ft OM_ H l! 0 X X L H 5 3 H 1 0 00r> Utls derlcs specification is. subject ta change without notice.


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    350fc LH53H1000D z3 IB PDF