Untitled
Abstract: No abstract text available
Text: BGA713N7 Single-Band UMTS LNA 700, 800 MHz Data Sheet Revision 3.1, 2013-01-31 RF & Protection Devices Edition 2013-01-31 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or
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BGA713N7
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Untitled
Abstract: No abstract text available
Text: BGA751N7 SiGe Bipolar 3G/3.5G/4G Single-Band LNA Data Sheet Revision 3.1, 2013-01-31 RF & Protection Devices Edition 2013-01-31 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer
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BGA751N7
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smd resistor 0402 footprint dimension
Abstract: BGA713L7 TGS 821 C166 T1533 713L LNA marking R0
Text: BGA713L7 Single-Band UMTS LNA 700, 800 MHz Data Sheet Revision 3.0, 2010-10-04 RF & Protection Devices Edition 2010-10-04 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or
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BGA713L7
smd resistor 0402 footprint dimension
BGA713L7
TGS 821
C166
T1533
713L
LNA marking R0
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Untitled
Abstract: No abstract text available
Text: BGA777N7 Single-Band UMTS LNA 2300 - 2700 MHz Data Sheet Revision 3.1, 2013-01-31 RF & Protection Devices Edition 2013-01-31 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer
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BGA777N7
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Untitled
Abstract: No abstract text available
Text: BGA711N7 SiGe Bipolar 3G/3.5G/4G Single-Band LNA Data Sheet Revision 3.1, 2013-01-31 RF & Protection Devices Edition 2013-01-31 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer
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BGA711N7
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Untitled
Abstract: No abstract text available
Text: BGA713L7 Single-Band UMTS LNA 700, 800 MHz Data Sheet Revision 3.0, 2010-10-04 RF & Protection Devices Edition 2010-10-04 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or
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BGA713L7
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TGS 880
Abstract: INFINEON PART MARKING BGA751L7 S12L
Text: D a t a S h e e t , V 3. 0 , S e p t e m b e r 2 00 8 B G A 7 51 L7 S i n gl e - B a n d U M T S L N A 800 MHz S m a l l S i g n a l D i s c r et e s Edition 2008-09-25 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2008.
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BGA751L7
TGS 880
INFINEON PART MARKING
S12L
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BGA751L7
Abstract: No abstract text available
Text: Data Sheet, V3.2, May 2009 BGA751L7 S i ng l e - B an d U M T S L N A 800, 900 MHz RF & Protection Devices Edition 2009-05-27 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2009. All Rights Reserved. Legal Disclaimer
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BGA751L7
BGA751L7
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Untitled
Abstract: No abstract text available
Text: Data Sheet, V3.2, May 2009 BGA751L7 S i ng l e - B an d U M T S L N A 800, 900 MHz RF & Protection Devices Edition 2009-05-27 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2009. All Rights Reserved. Legal Disclaimer
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BGA751L7
BGA751L7
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TGS 2620
Abstract: UMTS transistor TGS 2600
Text: Data Sheet, V3.0, July 2009 BGA777L7 S i ng l e - B an d U M T S L N A 2300 - 2700 MHz RF & Protection Devices Edition 2009-07-02 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2009. All Rights Reserved. Legal Disclaimer
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BGA777L7
BGA777L7
TGS 2620
UMTS transistor
TGS 2600
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smd resistor 0402 footprint dimension
Abstract: BGA711L7
Text: Data Sheet, V3.2, May 2009 BGA711L7 S i ng l e - B an d U M T S L N A 2100, 1900 MHz RF & Protection Devices Edition 2009-05-27 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2009. All Rights Reserved. Legal Disclaimer
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BGA711L7
BGA711L7
smd resistor 0402 footprint dimension
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Untitled
Abstract: No abstract text available
Text: Data Sheet, V3.0, July 2009 BGA777L7 S i ng l e - B an d U M T S L N A 2300 - 2700 MHz RF & Protection Devices Edition 2009-07-02 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2009. All Rights Reserved. Legal Disclaimer
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BGA777L7
BGA777L7
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BGA711L7
Abstract: t-1531
Text: D a t a S he et , V 3. 1 , N o v e m be r 2 00 8 B G A 7 11 L7 S i n gl e - B a n d U M T S LN A 2 1 00 , 1 9 0 0 M H z S m a l l S i g n a l D i s c r et e s Edition 2008-11-05 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2008.
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BGA711L7
t-1531
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D2832A
Abstract: CXD2832AER CXD2832 CXD2832A CXd283 sony TV TUNER pin
Text: Zero-IF Tuner IC for Digital Satellite Broadcast CXD2832AER Description The CXD2832AER is an IC developed for direct orthogonal detection of 1st IF signal 1 to 2 GHz from RF converter block in a digital satellite broadcast receiver system. The CXD2832AER incorporates all the functions (LNA , RF gain control
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CXD2832AER
CXD2832AER
D2832A
CXD2832
CXD2832A
CXd283
sony TV TUNER pin
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sot1230
Abstract: silicon diode and germanium
Text: ;6 21 BGU8009 SiGe:C Low Noise Amplifier MMIC for GPS, GLONASS, Galileo and Compass Rev. 1 — 1 February 2013 Product data sheet 1. Product profile 1.1 General description The BGU8009 is a Low Noise Amplifier LNA for GNSS receiver applications, available in
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BGU8009
BGU8009
sot1230
silicon diode and germanium
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Untitled
Abstract: No abstract text available
Text: TQP3M9039 500−1500 MHz Dual LNA Applications • • • • • Base Station Receivers Tower Mount Amplifiers Balanced Amplifiers FDD-LTE, TDD-LTE, WCDMA, CDMA, GSM General Purpose Wireless 16-pin 4x4 mm QFN Package Product Features • • • • •
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TQP3M9039
16-pin
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3M9039
Abstract: Thin Quad flat package mo-220 68 ECJ0EC1H470J
Text: TQP3M9039 700−1000 MHz Dual LNA Applications • Base Station Receivers Tower Mount Amplifiers Balanced Amplifiers FDD-LTE, TDD-LTE, WCDMA, CDMA, GSM General Purpose Wireless 16-pin 4x4 mm QFN Package Product Features
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TQP3M9039
16-pin
3M9039
Thin Quad flat package mo-220 68
ECJ0EC1H470J
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BGA734L16
Abstract: FOMA1700 FOMA800 JESD22-A114 T1520 FR4 Prepreg
Text: Data Sheet, V1.0, January 2008 BGA734L16 Low Power Tri-Band UMTS LNA 2100, 1900, 800 MHz RF & Protection Devices Edition 2008-01-25 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2009. All Rights Reserved. Legal Disclaimer
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BGA734L16
TSLP-16-1
BGA734L16
GPC01203
FOMA1700
FOMA800
JESD22-A114
T1520
FR4 Prepreg
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Untitled
Abstract: No abstract text available
Text: TQP3M9040 1500−2300 MHz Dual LNA Applications • • • • • Base Station Receivers Tower Mount Amplifiers Balanced Amplifiers FDD-LTE, TDD-LTE, WCDMA, CDMA, GSM General Purpose Wireless 16-pin 4x4 mm QFN Package Product Features • • • • •
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TQP3M9040
16-pin
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FR4 Prepreg
Abstract: BGA734L16 FOMA1700 FOMA800
Text: D a t a S h e e t , V 2 . 0 , J a n ua ry 2 00 8 B G A 7 34 L1 6 Low Power Tri-Band UMTS LNA 2 1 00 , 1 9 0 0, 8 0 0 M H z S m a l l S i g n a l D i s c r et e s Edition 2008-01-25 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2008.
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TSLP-16-1
BGA734L16
GPC01203
FR4 Prepreg
FOMA1700
FOMA800
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Germanium power
Abstract: No abstract text available
Text: Data Sheet, Version 1.2, March 2006 BGA615L7 Silicon Germanium GPS Low Noise Amplifier Automotive and Industrial Silicon Discretes N e v e r s t o p t h i n k i n g . Edition 2006-03-27 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München
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D-81541
BGA615L7
BGA619
Germanium power
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MARKING CODE 106 QFN
Abstract: 04023J0R5BBSTR 3M9040
Text: TQP3M9040 1500−2300 MHz Dual LNA Applications • • • • • Base Station Receivers Tower Mount Amplifiers Balanced Amplifiers FDD-LTE, TDD-LTE, WCDMA, CDMA, GSM General Purpose Wireless 16-pin 4x4 mm QFN Package Product Features • • • • •
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TQP3M9040
16-pin
MARKING CODE 106 QFN
04023J0R5BBSTR
3M9040
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HEMT Amplifier
Abstract: LNA marking G
Text: In fineon !*íh«t!eg¡íis 24 - 32 GHz GaAs Low Noise Amplifier MMIC 24 - 32 GHz LNA Preliminary Data Sheet • Two-Stage Monolithic Microwave integrated Circuit MMIC HEMT Amplifier (coplanar design) • Input/Output matched to 50 • Frequency range: 24 GHz to 32 GHz
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Abstract: No abstract text available
Text: W I R E L E S S TQ9203J C O M M U N I C A T I O N S PRELIM IN ARY Block Diagram Low-Current RFIC Downconverter Features * + 5 V single supply * Internal buffer amplifier on mixer LO port Product Description * On-chip matching to 50 Q The TQ9203J RFIC Downconverter is a multifunction RF front end designed for the high
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TQ9203J
TQ9203J
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