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    S12L Search Results

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    S12L Price and Stock

    Micro Commercial Components SS12-LTP

    DIODE SCHOTTKY 20V 1A DO214AC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SS12-LTP Cut Tape 20,361 1
    • 1 $0.3
    • 10 $0.185
    • 100 $0.3
    • 1000 $0.06099
    • 10000 $0.06029
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    SS12-LTP Digi-Reel 20,361 1
    • 1 $0.3
    • 10 $0.185
    • 100 $0.3
    • 1000 $0.06099
    • 10000 $0.06029
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    SS12-LTP Reel 20,000 5,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.041
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    IBS Electronics SS12-LTP 5,000
    • 1 -
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    • 10000 $0.036974
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    Vyrian SS12-LTP 115,152
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    Vishay Semiconductors VS-90EPS12L-M3

    DIODE STANDARD 1200V 90A TO247AD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey VS-90EPS12L-M3 Tube 1,142 1
    • 1 $5.41
    • 10 $5.41
    • 100 $5.41
    • 1000 $2.5
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    Vishay Semiconductors VS-65EPS12LHM3

    DIODE STANDARD 1200V 65A TO247AD
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    DigiKey VS-65EPS12LHM3 Tube 981 1
    • 1 $3.89
    • 10 $3.89
    • 100 $3.89
    • 1000 $2.325
    • 10000 $2.325
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    Panduit Corp PS12-L

    CONN INLINE 12-14 AWG CRIMP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PS12-L Bulk 970 1
    • 1 $0.84
    • 10 $0.781
    • 100 $0.727
    • 1000 $0.67623
    • 10000 $0.65698
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    Avnet Americas PS12-L Bulk 4 Weeks, 3 Days 1
    • 1 $0.724
    • 10 $0.724
    • 100 $0.724
    • 1000 $0.667
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    PS12-L Bulk 8 Weeks 500
    • 1 $44.09
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    Newark PS12-L Bulk 3 1
    • 1 $0.826
    • 10 $0.811
    • 100 $0.743
    • 1000 $0.667
    • 10000 $0.667
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    RS PS12-L Bulk 55 1
    • 1 $0.778
    • 10 $0.778
    • 100 $0.661
    • 1000 $0.56
    • 10000 $0.56
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    Master Electronics PS12-L 27
    • 1 $0.682
    • 10 $0.682
    • 100 $0.59
    • 1000 $0.5
    • 10000 $0.5
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    Sager PS12-L 500
    • 1 -
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    • 1000 $0.5233
    • 10000 $0.4652
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    TestEquity LLC PS12-L
    • 1 $31.47
    • 10 $31.47
    • 100 $31.47
    • 1000 $31.47
    • 10000 $31.47
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    Vishay Semiconductors VS-40TPS12L-M3

    SCR 1.2KV 55A TO247AD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey VS-40TPS12L-M3 Tube 845 1
    • 1 $5
    • 10 $5
    • 100 $5
    • 1000 $1.82875
    • 10000 $1.82875
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    Find more S12L price and stock on Findchips.com

    S12L Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    S12LCD32F4BV1 Freescale Semiconductor HCS12 32-Frontplane, 4-Backplane Liquid Crystal Display (LCD) Block Guide Original PDF
    S12LN125 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    S12LN125 Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF

    S12L Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    S12LY9C

    Abstract: Hebei I.T
    Text: Hebei I.T. Shanghai Co., Ltd. SPECIFICATION Part No. : S12LY9C Features： Highest Flux Yellow High reliability and Very long operating life Low voltage DC operated More Energy Efficient NO UV + Superior ESD protection + + RoHS Compliant - - Typical Applications：


    Original     		S12LY9C 350mA S12LY9C Hebei I.T PDF

    Untitled

    Abstract: No abstract text available
    Text: +HEHL,7 6KDQJKDL &R/WG LED SPECIFICATION Part No. ： S12LY9C-B Features： Highest Flux Yellow + Low voltage DC operated + up to 100K hours + High reliability and Very long operating life - - More Energy Efficient than Incandescent and most Halogen lamps


    Original     		S12LY9C-B 350mA PDF

    Untitled

    Abstract: No abstract text available
    Text: S12LN125 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current150 @Temp (øC) (Test Condition)125Ï V(RRM)(V) Rep.Pk.Rev. Voltage960 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.3.3k V(FM) Max.(V) Forward Voltage1.39 @I(FM) (A) (Test Condition)470 @Temp. (øC) (Test Condition)


    Original     		S12LN125 Current150 Voltage960 Current30m PDF

    LCD32F4B

    Abstract: 32-frontplane 4 backplane FP20BP3 FP10BP3 FP18BP1 FP21E
    Text: DOCUMENT NUMBER S12LCD32F4BV1/D LCD32F4B Block User Guide V01.07 Original Release Date: 26-July-2000 Revised: 08-Mar-2002 Motorola, Inc Motorola reserves the right to make changes without further notice to any products herein to improve reliability, function or


    Original     		S12LCD32F4BV1/D LCD32F4B 26-July-2000 08-Mar-2002 LCD32F4B 32-frontplane 4 backplane FP20BP3 FP10BP3 FP18BP1 FP21E PDF

    S12LR2C-B

    Abstract: No abstract text available
    Text: +HEHL,7 6KDQJKDL &R/WG LED SPECIFICATION Part No. ： S12LR2C-B Features： Highest Flux Red + Low voltage DC operated + up to 100K hours + High reliability and Very long operating life - - More Energy Efficient than Incandescent and most Halogen lamps


    Original     		S12LR2C-B 350mA S12LR2C-B PDF

    Untitled

    Abstract: No abstract text available
    Text: STAR Part No. S12LG2C Features Highest Flux Pure Green High reliability and Very long operating life up to 100K hours Low voltage DC operated More Energy Efficient than Incandescent and most Halogen lamps NO UV Superior ESD protection Typical Applications


    Original     		S12LG2C PDF

    LCD32F4B

    Abstract: No abstract text available
    Text: Freescale Semiconductor, Inc. Freescale Semiconductor, Inc. DOCUMENT NUMBER S12LCD32F4BV1/D LCD32F4B Block User Guide V01.07 Original Release Date: 26-July-2000 Revised: 08-Mar-2002 Motorola, Inc Motorola reserves the right to make changes without further notice to any products herein to improve reliability, function or


    Original     		S12LCD32F4BV1/D LCD32F4B 26-July-2000 08-Mar-2002 LCD32F4B PDF

    telemetry block diagram

    Abstract: HFA3600 HFA3600IB IS-54 schematic diagram UPS active power 600 LNA for WIRELESS APPLICATIONS FROM 100 MHz - 800Mhz HA3600 S11L
    Text: HFA3600 NO RE U CT NT PROD E T E CEME L OBSO DED REPLA Data Sheet EN COMM August 2002 FN3655.5 Low-Noise Amplifier/Mixer Features The HFA3600 is a silicon Low-Noise Amplifier with high performance characteristics allowing the design of very sensitive, wide dynamic-range 900MHz receivers with


    Original     		HFA3600 FN3655 HFA3600 900MHz 900MHz telemetry block diagram HFA3600IB IS-54 schematic diagram UPS active power 600 LNA for WIRELESS APPLICATIONS FROM 100 MHz - 800Mhz HA3600 S11L PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFR 181 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA • fT = 8GHz F=1.45dB at 900MHz SOT-23 RFs Q62702-F1314 1= B 2=E o Package BFR 181 II CO ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		900MHz Q62702-F1314 OT-23 BFR181 PDF

    sot marking code ZS

    Abstract: transistor bf 290
    Text: SIEMENS BF 770A NPN S ilicon RF Transistor • For IF amplifiers in TV-sat tuners and for VCR modulators it m 1= B h Q62702-F1124 O LSs CO BF 770A ro ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin C onfiguration


    OCR Scan     		OT-23 Q62702-F1124 21el2 IS2l/S12l sot marking code ZS transistor bf 290 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFR 183 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA • /f = 8 GHz F = 1.2 dB at 900 MHz RHs Q62702-F1316 1= B li O BFR 183 CO ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		Q62702-F1316 OT-23 BFR183 900MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: DOCUMENT NUMBER 9S12H256BDGV1/D MC9S12H256 Device User Guide V01.16 Original Release Date: 29 SEP 2000 Revised: 05 NOV 2003 Motorola, Inc Motorola reserves the right to make changes without further notice to any products herein to improve reliability, function or


    Original     		9S12H256BDGV1/D MC9S12H256 144-pin MC9S12H256 PDF

    generator cr 665 bosch

    Abstract: BOSCH 0 281 002 709 MC9S12ZVM
    Text: MC9S12ZVM-Family Reference Manual HCS12 Microcontrollers Rev. 1.3 20 JAN 2014 MC9S12ZVMRMV1 freescale.com To provide the most up-to-date information, the document revision on the Internet is the most current. A printed copy may be an earlier revision. To verify you have the latest information available, refer to :


    Original     		MC9S12ZVM-Family HCS12 MC9S12ZVMRMV1 S12ZCPU generator cr 665 bosch BOSCH 0 281 002 709 MC9S12ZVM PDF

    gbr relais

    Abstract: TRANSISTOR KATALOG VEB M ik ro e le k tro n ik VEB Kombinat Germanium Transistor katalog Schaltkreise ad149 Germanium Transistor Kombinat VEB Gleichrichter
    Text: Stromversorgung M odul 2 0 • G erm anium KOMBINAT VEB ELEKTRO-APPARATE-WERKE BERLIN-TREPTOW STROMVERSORGUNG Modul 20 - Germ anium Ausgabe 1972 I« y ' r . ■•} il- .'ff. Seite 4» 3 Konstruktiver Aufbcau , ■ Elektrische g r a m s t e r 4 Bezeichnung der Bausteine und


    OCR Scan     		01--B gbr relais TRANSISTOR KATALOG VEB M ik ro e le k tro n ik VEB Kombinat Germanium Transistor katalog Schaltkreise ad149 Germanium Transistor Kombinat VEB Gleichrichter PDF

    SCR TRIGGER PULSE 3 phase

    Abstract: OMC942723170 Hitachi DSA0044
    Text: OMC942723170 H8/300H Series On-Chip Supporting Modules Application Note ADE-502-035 Notice When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form,


    Original     		OMC942723170 H8/300H ADE-502-035 SCR TRIGGER PULSE 3 phase OMC942723170 Hitachi DSA0044 PDF

    Chips and Technologies F840

    Abstract: b1115 d6160
    Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original     		0103D2 603090C0 H8/300H Chips and Technologies F840 b1115 d6160 PDF

    BGA735N16

    Abstract: No abstract text available
    Text: BGA735N16 High Linearity Tri-Band UMTS LNA 2100, 1900/1800/2100, 800/900MHz Data Sheet Revision 3.5, 2009-11-24 Final RF & Protection Devices Edition 2009-11-24 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG


    Original     		BGA735N16 800/900MHz) BGA735N16 TSNP-16-1 PDF

    Untitled

    Abstract: No abstract text available
    Text: BGA771N16 High Linearity Dual-Band UMTS LNA 1900/1800/2100, 800/900MHz Data Sheet Revision 3.1, 2010-03-16 Final RF & Protection Devices Edition 2010-03-16 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.


    Original     		BGA771N16 800/900MHz) BGA771N16 TSNP-16-1 PDF

    TGS 880

    Abstract: INFINEON PART MARKING BGA751L7 S12L
    Text: D a t a S h e e t , V 3. 0 , S e p t e m b e r 2 00 8 B G A 7 51 L7 S i n gl e - B a n d U M T S L N A 800 MHz S m a l l S i g n a l D i s c r et e s Edition 2008-09-25 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2008.


    Original     		BGA751L7 TGS 880 INFINEON PART MARKING S12L PDF

    BGA736

    Abstract: HSDPA BGA736L16 KC639 T1540 T0712
    Text: Data Sheet, V2.1, July 2008 BGA736L16 Tri-Band HSDPA LNA 2100, 1900/2100, 800/900 MHz RF & Protection Devices Edition 2008-07-03 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2009. All Rights Reserved. Legal Disclaimer


    Original     		BGA736L16 TSLP-16-1 BGA736L16 TSLP-16-1-PO BGA736 HSDPA KC639 T1540 T0712 PDF

    hsdpa

    Abstract: BGA736L16 TGS 800
    Text: D a t a S he et , V 2. 1, J u l y 2 00 8 B G A 7 36 L1 6 Tri-Band HSDPA LNA 2 1 00 , 1 9 0 0/ 2 1 0 0 , 8 0 0 / 9 00 M H z S m a l l S i g n a l D i s c r et e s Edition 2008-07-03 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2008.


    Original     		TSLP-16-1 BGA736L16 TSLP-16-1-PO hsdpa TGS 800 PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet, V2.1, July 2008 BGA736L16 Tri-Band HSDPA LNA 2100, 1900/2100, 800/900 MHz RF & Protection Devices Edition 2008-07-03 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2009. All Rights Reserved. Legal Disclaimer


    Original     		BGA736L16 intellectu-16-1 BGA736L16 TSLP-16-1-PO PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFP183R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! BFP 183R RHs


    OCR Scan     		BFP183R Q62702-F1594 OT-143R 76VBE 900MHz a535fc PDF

    Untitled

    Abstract: No abstract text available
    Text: D a t a S he et , V 3. 0, A ug us t 2 00 8 B G A 7 35 L1 6 H i g h L i n ea r i t y T r i - B an d U M T S L N A 2 1 00 , 1 9 0 0/ 1 8 0 0 /2 1 0 0 , 80 0 / 9 0 0 M H z S m a l l S i g n a l D i s c r et e s Edition 2008-08-26 Published by Infineon Technologies AG


    Original     		TSLP-16-1 BGA735L16 TSLP-16-1-PO PDF