lockbits
Abstract: FUSE 7
Text: Errata • • • • • • • Releasing Reset Condition without Clock Clearing Lockbits at High VCC or Temperature Wrong Clearing of XTRF in MCUSR Reset during EEPROM Write Serial Programming at Voltages below 3.0 Volts High ICC in Power-down with External Clock Running
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1193D
09/01/xM
lockbits
FUSE 7
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lockbits
Abstract: No abstract text available
Text: Errata • • • • • • Releasing Reset Condition without Clock Clearing Lockbits at High VCC or Temperature Wrong Latching of FSTRT Fuse Wrong Clearing of XTRF in MCUSR Reset during EEPROM Write Serial Programming at Voltages below 3.0 Volts 6. Releasing Reset Condition without Clock
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1192D
09/01/xM
lockbits
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Untitled
Abstract: No abstract text available
Text: Errata • • • • • • Clearing Lockbits at High VCC or Temperature Wrong Latching of FSTRT Fuse Wrong Clearing of XTRF in MCUSR Reset during EEPROM Write Verifying EEPROM in System Serial Programming at Voltages below 3.0 Volts 6. Clearing Lockbits at High VCC or Temperature
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PDF
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1192C
02/00/xM
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Untitled
Abstract: No abstract text available
Text: Errata • • • • • • • Clearing Lockbits at High VCC or temperature Wrong Clearing of XTRF in MCUSR Reset During EEPROM Write Verifying EEPROM in System Serial Programming at Voltages below 3.0 Volts High ICC in Power Down with External Clock Running
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PDF
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1193C
02/00/xM
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1601A-02
Abstract: No abstract text available
Text: Errata • • • • • • Clearing Lockbits at High VCC or Temperature Wrong Clearing of XTRF in MCUSR Reset During EEPROM Write Verifying EEPROM in System Serial Programming at Voltages below 3.0 Volts Missing External Clock Option 6. Clearing Lockbits at High VCC or Temperature
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02/00/xM
1601A-02
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TE28F640J3C-120
Abstract: 28F64J3 28f256j3c SL894 RC28F128J3C-150 SL897 28F128j3c TE28F640J3C120 sl896 28F320J3C
Text: Intel StrataFlash Memory J3 256-Mbit J3 Family Specification Update June 2005 The 28F256J3, 28F128J3, 28F640J3, and 28F320J3 may contain design defects or errors known as errata that may cause the product to deviate from published specifications. Current
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256-Mbit
28F256J3,
28F128J3,
28F640J3,
28F320J3
TE28F640J3C-120
28F64J3
28f256j3c
SL894
RC28F128J3C-150
SL897
28F128j3c
TE28F640J3C120
sl896
28F320J3C
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TE28F640J3C-120
Abstract: TE28F128J3C-120 INTEL 28F320J3 28F128J3 28F256K18 TE28F320J3C110 28F320J3 RC28F640J3C-120 28F640J3 28F640J3 reliability
Text: 3 Volt Intel StrataFlash Memory 28F128J3, 28F640J3, 28F320J3 x8/x16 Datasheet Product Features • ■ ■ Performance — 110/115/120/150 ns Initial Access Speed — 25 ns Asynchronous Page-Mode Reads — 32-Byte Write Buffer —6.8 µs per Byte Effective
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28F128J3,
28F640J3,
28F320J3
x8/x16)
32-Byte
128-bit
--64-bit
High-Densi8/x16
56-Lead
TE28F640J3C-120
TE28F128J3C-120
INTEL 28F320J3
28F128J3
28F256K18
TE28F320J3C110
28F320J3
RC28F640J3C-120
28F640J3
28F640J3 reliability
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Untitled
Abstract: No abstract text available
Text: W28J320B/T 32M 2M x 16/4M × 8 BOOT BLOCK FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION. 3 2. FEATURES . 3
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W28J320B/T
16/4M
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PFC 5kw
Abstract: principle block diagram 115v 400hz power schematic diagram 10kw bldc motor speed controller 1242 qfn32 P320 AVR AT90PWM81
Text: Features • High performance, low power Atmel AVR® 8-bit Microcontroller • Advanced RISC architecture • • • • – 131 powerful instructions - most single clock cycle execution – 32 x 8 general purpose working registers – Fully static operation
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8/16Kbytes
7734Q
PFC 5kw
principle block diagram 115v 400hz power
schematic diagram 10kw bldc motor speed controller
1242 qfn32
P320 AVR
AT90PWM81
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programmable storage device
Abstract: No abstract text available
Text: TMS29F816 16 384-BIT SCOPE DIARY JTAG ADDRESSABLE STORAGE DEVICE SMJS816B-NOVEMBER1990-REVISED JANUARY 1993 FM PACKAGEt TOP VIEW * Member of Texas Instruments SCOPE'“ Family of Testability Products * IEEE 1149.1 Serial Test Bus Compatible * Organization . . . 2048 x 8-Bit Flash Memory
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TMS29F816
384-BIT
SMJS816B-NOVEMBER1990-REVISED
29F816-06
1024-Byte
programmable storage device
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phase controller L120
Abstract: 1N914 28F008SA LH28F004SCB-L12 LHF04C10
Text: SHARP LHF04C10 CONTENTS PA G E PA G E 1.0 IN TRO D U CTIO N . 3 5.0 D ESIG N C O N S ID E R A T IO N S . 23 1.1 New Features. 3
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LHF04C10
LHF04C10
fbga048
AA2029
CSP48
0608TCMâ
CV782
phase controller L120
1N914
28F008SA
LH28F004SCB-L12
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Untitled
Abstract: No abstract text available
Text: SMJ29F816 16 384-BIT SCOPE DIARY JTAG ADDRESSABLE STORAGE DEVICE S G M S 0 5 3-N O V E M B E R 1 99 0-R E V IS E D JA N U A R Y 1993 FG PACKAGEt TOP VIEW * Member of Texas Instruments SCOPE™ Family of Testability Products * IEEE 1149.1 Serial Test Bus Compatible
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OCR Scan
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PDF
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SMJ29F816
384-BIT
29F816-06
1024-Byte
32-Byte
18-Pin
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Untitled
Abstract: No abstract text available
Text: SEE NEW DESIGN RECOMMENDATIONS in te i REFERENCE ONLY 28F016SA FlashFile MEMORY Includes Commercial and Extended Temperature Specifications Revolutionary Architecture — Pipelined Command Execution — Program during Erase — Command Superset of Intel
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PDF
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28F016SA
28F008SA
56-Lead,
28F016SA
28F032SA
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Untitled
Abstract: No abstract text available
Text: in te l 28F016XS 16-MBIT 1 MBIT x 16, 2 MBIT x 8 SYNCHRONOUS FLASH MEMORY Effective Zero Wait-State Performance up to 33 MHz — Synchronous Pipelined Reads Backwards-Compatible with 28F008SA Command-Set SmartVoltage Technology — User-Selectable 3.3V or 5V Vqc
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OCR Scan
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PDF
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28F016XS
16-MBIT
28F008SA
56-Lead
128-Kbyte
16-Mbit
|
|
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Untitled
Abstract: No abstract text available
Text: Ä M Ä K I I 0 M F @ [^ O ii]Ä ¥ 0 ® M VS28F016XS, MS28F016XS 16-MBIT 1 MBIT x 16, 2 MBIT x 8 SYNCHRONOUS FLASH MEMORY • VS28F016XS 40°C to +125°C — QML Certified — SE2 Grade ■ 0.25 MB/sec Write Transfer Rate ■ MS28F016XS 55°C to 125°C
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VS28F016XS,
MS28F016XS
16-MBIT
VS28F016XS
MS28F016XS
VE28F008,
M28F008
28F016SA
56-Lead
128-Kbyte
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY 5 VOLT FlashFile MEMORY 28F160S5 and 28F320S5 x8/x16 Two 32-Byte Write Buffers — 2 \is per Byte Effective Programming Time Operating Voltage 5 V Vcc — — 5 V V pp 70 ns Read Access Time (16 Mbit) 90 ns Read Access Time (32 Mbit) High-Density Symmetrically-Blocked
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28F160S5
28F320S5
x8/x16)
32-Byte
64-Kbyte
28F016SV
28F016SA
AP-607
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Untitled
Abstract: No abstract text available
Text: intei ADVANCED INFORMATION WORD-WIDE FlashFile MEMORY FAMILY 28F160S5, 28F320S5 Includes Extended Temperature Specifications Two 32-Byte Write Buffers — 2 us per Byte Effective Programming Time • Cross-Compatible Command Support — Intel Standard Command Set
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28F160S5,
28F320S5
32-Byte
Re045
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Untitled
Abstract: No abstract text available
Text: int ! PRELIMINARY BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT 28F004S5, 28F008S5, 28F016S5 Includes Commercial and Extended Temperature Specifications SmartVoltage Technology — Smart 5 Flash: 5 V Vcc and 5 V or 12 V V p p High-Performance
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28F004S5,
28F008S5,
28F016S5
40-Lead
44-Lead
64-Kbyte
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Untitled
Abstract: No abstract text available
Text: in te l A P iM ! O M IR S K E fflA T r iK S lR ] DD28F032SA 32-MBIT 2 MBIT X 16, 4 MBIT X 8 FlashFile MEMORY • User-Selectable 3.3V or 5V Vcc ■ User-Configurable x8 or x16 Operation ■ 70 ns Maximum Access Time ■ 0.43 MB/sec Write Transfer Rate
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PDF
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DD28F032SA
32-MBIT
28F016SA
56-Lead,
DD28F032SA
32-Mbit
3-30i
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Untitled
Abstract: No abstract text available
Text: intei 28F016SV 16-MBIT 1 MBIT x 16, 2 MBIT x 8 FlashFileTM MEMORY Sm artVoltage Technology — User-Selectable 3.3V or 5V V cc -U s e r-S e le c ta b le 5V or 12V Vpp 65 ns Access Time 1 Million Erase Cycles per Block 30.8 M B /sec Burst W rite Transfer Rate
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28F016SV
16-MBIT
28F016SA,
28F008SA
28F008SA
56-Lead
4fl2bl75
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Untitled
Abstract: No abstract text available
Text: PRODUCT PREVIEW int ! VALUE SERIES 200 FLASH MEMORY CARD 8 - 6 4 MEGABYTES ¡MC008FLSG, ¡MC016FLSG, ¡MC024FLSG ¡MC032FLSG, ¡MC048FLSG, ¡MC064FLSG Low-Cost Linear Flash Card — Intel StrataFlash Memory Technology Automated Write and Erase Algorithms
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MC008FLSG,
MC016FLSG,
MC024FLSG
MC032FLSG,
MC048FLSG,
MC064FLSG
AP-374
AP-644
AP-646
AP-647
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Untitled
Abstract: No abstract text available
Text: SERIES 2+ FLASH MEMORY CARDS 4-, 8-, 20- AND 40 MEGABYTES ÌM C004FLSP, ÌM C008FLSP, ÌM C020FLSP, ÌM C040FLSP • Revolutionary Architecture — Pipelined Command Execution — Write during Erase — Series 2 Command Super-Set 150 ns Maximum Access Time with 5 V
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C004FLSP,
C008FLSP,
C020FLSP,
C040FLSP
28F016SA
16-Mbit
28F008SA
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Untitled
Abstract: No abstract text available
Text: PRODUCT PREVIEW BYTE-WIDE SMART 3 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT 28F004S3, 28F008S3, 28F016S3 Includes Commercial and Extended Temperature Specifications • SmartVoltage Technology — Smart 3 Flash: 2.7V Read-Only or 3.3V Vcc and 3.3V or 12V VPP
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28F004S3,
28F008S3,
28F016S3
40-Lead
44-Lead
64-Kbyte
16-Mbit
16-Mbit
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Untitled
Abstract: No abstract text available
Text: m A E W A M ! O M lF O K ß ffl/Ä T O ^ y 28F016XS 16-MBIT 1 MBIT x 16, 2 MBIT x 8 SYNCHRONOUS FLASH MEMORY Effective Zero Wait-State Performance up to 33 MHz — Synchronous Pipelined Reads SmartVoltage Technology — User-Selectable 3.3V or 5V Vcc
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PDF
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28F016XS
16-MBIT
56-Lead
28F008SA
128-Kbyte
16-Mbit
ER-33,
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