Untitled
Abstract: No abstract text available
Text: TOSHIBA •ìD1 7 2 4 fl Ü G E S O M O TOSHIBA LOGIC/MEMORY SI S « T O S S b'IE D CMOS 512KX9 RDRAM TC59R0409 t a r g e t s il ic o n g a t e s p e c DESCRIPTION This a new generation ultra high speed CMOS Rambus™ DRAM organized as 512KX9. It uses advanced
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512KX9
TC59R0409
512KX9.
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PAL16RA8
Abstract: 3tj-00
Text: PAL16RA8 National á¡A Semiconductor PAL16RA8 Programmable Array Logic PAL General Description The PAL16RA8 is a new member of National’s broad PAL® family. It provides several new features which will dramati cally benefit PAL users. National Semiconductor's ad
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PAL16RA8
PAL16RA8
20-Pin
16RA8NC
tl/l/9253-2
TL/L/9253-17
3tj-00
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Untitled
Abstract: No abstract text available
Text: PAL16RA8 ZJÄ National ÀjA Semiconductor PAL16RA8 Programmable Array Logic PAL General Description The PAL16RA8 is a new member of National’s broad PAL® family. It provides several new features which will dramati cally benefit PAL users. National Semiconductor’s ad
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PAL16RA8
PAL16RA8
functions15
20-Pin
PAL16RA8NC
TL/L/9253-2
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Untitled
Abstract: No abstract text available
Text: PAL16RA8 National Semiconductor PAL16RA8 Programmable Array Logic PAL General Description The PALI 6RA8 is a new member of National’s broad PAL® family. It provides several new features which will dramati cally benefit PAL users. National Semiconductor's ad
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PAL16RA8
20-Pin
PAL16RABNC
Tl/L/9253-2
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pal20ra10
Abstract: No abstract text available
Text: PAL20RA10 ZWÂ National Æià Semiconductor PAL20RA10 Programmable Array Logic PAL General Description The PAL20RA10 is a new member of National’s broad PAL family. It provides several new features which will dramati cally benefit PAL users. National Semiconductor’s ad
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PAL20RA10
PAL20RA10
24-Pin
28-Lead
Diagram--PAL20RA10
TL/L/8702-15
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B7023
Abstract: No abstract text available
Text: PAL20RA10 K n National ÀÜt Semiconductor Programmable Array Logic PAL PAL20RA10 General Description The PAL20RA10 is a new member of National's broad PAL family. It provides several new features which will dramati cally benefit PAL users. National Semiconductor's adva ice d Schottky TTL process with titanium tungsten fusible
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PAL20RA10
PAL20RA10
24-Pin
TL/L/8702-22
B7023
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MEJ 301
Abstract: PAL20RA10 00IC0
Text: PAL20RA10 ZWA National ææ Semiconductor PAL20RA10 Programmable Array Logic PAL General Description The PAL20RA10 is a new member of National’s broad PAL family. It provides several new features which will dramati cally benefit PAL users. National Semiconductor’s ad
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PAL20RA10
PAL20RA10
TL/L/8702-15
MEJ 301
00IC0
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st 992 h1
Abstract: No abstract text available
Text: T3 > }/E \ National iCm Semiconductor CT> 33 > 00 Programmable Array Logic PAL PAL16RA8 General Description The PAL16RA8 is a new member of National's broad PAL® f amily. It provides several new features which will dramati cally benefit PAL users. National Semiconductor's ad
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PAL16RA8
PAL16RA8
st 992 h1
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DDR2 184 pin out
Abstract: No abstract text available
Text: 1GB x72, SR 240-Pin DDR2 SDRAM FBDIMM Features DDR2 SDRAM FBDIMM MT9HTF12872FZ – 1GB • Transparent mode for DRAM test support • VDD = VDDQ = 1.8V for DRAM • VREF = 0.9V SDRAM command and address termination • VCC = 1.5V for AMB • VDDSPD = 3–3.6V for AMB and EEPROM
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240-Pin
MT9HTF12872FZ
240-pin,
PC2-5300
PC2-6400
09005aef83de8266
htf9c128x72fz
DDR2 184 pin out
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Untitled
Abstract: No abstract text available
Text: 1GB x72, SR 240-Pin DDR2 SDRAM FBDIMM Features DDR2 SDRAM FBDIMM MT9HTF12872FZ – 1GB Features • Transparent mode for DRAM test support • VDD = V DDQ = 1.8V for DRAM • VREF = 0.9V SDRAM command and address termination • VCC = 1.5V for AMB • VDDSPD = 3–3.6V for AMB and EEPROM
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240-Pin
MT9HTF12872FZ
240-pin,
PC2-5300
PC2-6400
09005aef83de8266
htf9c128x72fz
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PDF
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TEA5880
Abstract: quadrature mixer TEA5880TS digital pressure sensor circuit diagram mpx AN01026 MO-150 NA12 SSOP24 S300 1001B
Text: TEA5880TS Integrated FM stereo radio IC for host processor tuning in handheld applications Rev. 02 — 26 April 2004 Preliminary data sheet 1. General description The TEA5880TS stereo FM radio IC dramatically reduces the printed-circuit board area only 100 mm2 needed to integrate FM radio functionality into portable devices. This
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TEA5880TS
TEA5880TS
TEA5880
quadrature mixer
digital pressure sensor circuit diagram mpx
AN01026
MO-150
NA12
SSOP24
S300 1001B
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SHP32-P-1125-0
Abstract: MSM5718B70 MSM5718B70-50GS-K MSM5718B70-53GS-K MSM5718B70-60GS-K sin ttl RDRAM CONCURRENT MSM5718B7
Text: ¡ Semiconductor MSM5718B70 ¡ Semiconductor MSM5718B70 E2G1033-17-54 18-Megabit RDRAM 2M ¥ 9 DESCRIPTION The 18-Megabit Rambus DRAM (RDRAM™) is an extremely high-speed CMOS DRAM organized as 2M words by 9 bits. It is capable of bursting up to 256 bytes of data at less than 2 nanoseconds per
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MSM5718B70
E2G1033-17-54
18-Megabit
SHP-32
SHP32-P-1125-0
MSM5718B70
MSM5718B70-50GS-K
MSM5718B70-53GS-K
MSM5718B70-60GS-K
sin ttl
RDRAM CONCURRENT
MSM5718B7
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ICS9211-01
Abstract: ICS9250-09
Text: Integrated Circuit Systems, Inc. ICS9250-09 Frequency Timing Generator for PENTIUM II Systems General Description Features The ICS9250-09 is a main clock synthesizer chip for Pentium II based systems using Rambus Interface DRAMs. This chip provides all the clocks required for such a system
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ICS9250-09
ICS9250-09
ICS9211-01.
ICS9250yF-09-T
ICS9211-01
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ICS9211-01
Abstract: ICS9250-09
Text: Integrated Circuit Systems, Inc. ICS9250-09 Frequency Timing Generator for PENTIUM II Systems General Description Features The ICS9250-09 is a main clock synthesizer chip for Pentium II based systems using Rambus Interface DRAMs. This chip provides all the clocks required for such a system
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ICS9250-09
ICS9250-09
ICS9211-01.
ICS9250yF-09-T
ICS9211-01
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Untitled
Abstract: No abstract text available
Text: Integrated Circuit Systems, Inc. ICS9250-12 Frequency Timing Generator for PENTIUM II/III Systems General Description Features The ICS9250-12 is a main clock synthesizer chip for Pentium II based systems using Rambus Interface DRAMs. This chip provides all the clocks required for such a system
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ICS9250-12
ICS9250-12
ICS9212-01,
ICS9250yF-12-T
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ICS9211-01
Abstract: ICS9250-09
Text: Integrated Circuit Systems, Inc. ICS9250-09 Frequency Timing Generator for PENTIUM II Systems General Description Features The ICS9250-09 is a main clock synthesizer chip for Pentium II based systems using Rambus Interface DRAMs. This chip provides all the clocks required for such a system
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ICS9250-09
ICS9250-09
ICS9211-01.
ICS9211-01
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Untitled
Abstract: No abstract text available
Text: • TOSHIBA TOTTEMfl G G S S Q S D MbM ■ TOSE TC59R1609VK TOSHIBA L06 IC/MFM0RY bSE » SILICON GATE CMOS 18 Mbit RDRAM t a r g e t DESCRIPTION The TC59R1609VK is a new generation ultra high speed CMOS Rambus™ DRAM organized as 2MX9. The TC59R1609VK uses advanced circuit design techniques with standard CMOS process technology. It
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TC59R1609VK
TC59R1609VK
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s 239 l
Abstract: No abstract text available
Text: & Dallas Sem iconductor MEUMoiMAmf w DRAM Timer FEATURES • All silicon delay line • Five equally spaced delay outputs DS1030 14-Pin DIP DS1031 8-Pin DIP DS1031S Q-Pin Surface Mount PIN CONNECTIONS / IN [ . 14 ] VCC • ■ IN [ v j -8 NC [ 2
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DS1030
14-Pin
DS1031
DS1031S
S1030
s 239 l
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Untitled
Abstract: No abstract text available
Text: QS5920 3.3V SYNC DRAM PLL Clock Driver QS5920 FEATURES/BENEFITS DESCRIPTION • 11 outputs • Balanced Drive Outputs ±12mA • Synchronous output enable sOE control for SDRAM power down mode • External feedback, internal loop filter • Low skew guaranteed between outputs
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QS5920
33MHz
100MHz
24-pin
QS5920
MDSC-00015-02
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PC-100
Abstract: No abstract text available
Text: QS5920A 3.3V SYNC DRAM PLL Clock Driver Q QS5920A QUALITY SEMICONDUCTOR, INC. FEATURES/BENEFITS DESCRIPTION • • • • The QS5920A is a high-performance, low skew, low jitter, multiple output phase-locked loop clock driver which is suitable for PC-100 spread spectrum clock
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QS5920A
QS5920A
PC-100
33MHz
100MHz
MDSC-00036-03
20A-04
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Untitled
Abstract: No abstract text available
Text: 3.3V SYNC DRAM PLL Clock Driver QS52510A ADVANCE INFORMATION Q u a l it y S e m ic o n d u c t o r , I n c . FEATURES/BENEFITS DESCRIPTION • Intel PC-100/spread spectrum compliant • 11 outputs: one bank of 10, and 1 dedicated output for feedback • Balanced drive outputs: ±12mA
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QS52510A
PC-100/spread
25MHz
160MHz
CDC251
24-pin
QS52510A
MO-153AD
MDSC-00034-03
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concurrent RDRAM 72
Abstract: Direct RDRAM clock generator RDRAM Reference Manual pin diagram ic 7424 concurrent rdram
Text: 4-Megabit RDRAM 512K x 9 Description System Benefits The 4-M egabit Rambus DRAM (RDRAM™) is an extremely-high-speed CM OS DRAM organized as 512K words by 9 bits and capable of bursting up to 256 bytes of data at 2 nanoseconds per byte. The use of Rambus Signaling Logic (RSL) technology makes this
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ED-7424)
concurrent RDRAM 72
Direct RDRAM clock generator
RDRAM Reference Manual
pin diagram ic 7424
concurrent rdram
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toshiba laptop battery pack pinout
Abstract: No abstract text available
Text: CL-GD6410 'CIRRUS LOCK: Preliminary Data Sheet FEATURES • Slngle-chlp VGA controller ■ ■ ■ ■ 100% IBM -VGA-hardware-compatlble Simultaneous CRT and LCD SlmulSCAN operation Two 256K x 4 DRAM video memory for small form factor Integrates RAMDAC
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CL-GD6410
64-shade
toshiba laptop battery pack pinout
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DS1030
Abstract: 74LS DS1030-100 DS1031 DS1031S 3507j
Text: Dallas Semiconductor PFSELOMDimimf DRAM Timer PIN CONNECTIONS • All silicon delay line IN [ 1 14 ] VCC NC [ 2 13 ] NC TAP 2 [ NC [ 3 12 ] TAP 1 TAP 2 [ 4 11 1 NC NC [ 5 10 ] TAP 3 4 r 6 9 ] NC G ND £ 7 8 ] OUT • IN [ 8 I T < O O FEATURES DS1030 14-Pin DIP
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DS1030
14-PinDIP
DS1031
DS1031S
14-pin
74LS
DS1030-100
3507j
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PDF
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