MC68B21CP
Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References
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SG379/D
1N965BRL
ZEN15V
1N751AS
1N967BRL
ZEN18V
1N751ASRL
1N968BRL
ZEN20V
MC68B21CP
xcm916x1cth16
transistor marking code 12W SOT-23
sg379
MC68B54P
XC68HC805P18CDW
mc68b50cp
MC2830
NE555N
CHN NE555N
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723653
Abstract: 72V7290 72V3613 72V7250 72V3611 72V3623 72V72100 72V7230 72V7240 72V7260
Text: Selector Guide for FIFO Memory Products • Synchronous FIFOs SuperSync II, SuperSync™ SyncFIFO™, DualSync™ • Bi-Directional Synchronous FIFOs • Asynchronous FIFOs the leading provider of FIFO memories. July’00 IDT FIFO Memory Products Quick Reference Guide
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512-bit
16K-bit
64K-bit
128K-bit
256K-bit
512K-bit
100MHz
133MHz
723653
72V7290
72V3613
72V7250
72V3611
72V3623
72V72100
72V7230
72V7240
72V7260
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PDF
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723653
Abstract: BI 7284 72V7250 72V72100 72V7230 72V7240 72V7260 72V7270 72V7280 72V7290
Text: Selector Guide for FIFO Memory Products • Synchronous FIFOs SuperSync II, SuperSync™ SyncFIFO™, DualSync™ • Bi-Directional Synchronous FIFOs • Asynchronous FIFOs the leading provider of FIFO memories. Jan’00 IDT FIFO Memory Products Quick Reference Guide
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512-bit
16K-bit
64K-bit
128K-bit
512K-bit
7236x3/72V36x3
723653
BI 7284
72V7250
72V72100
72V7230
72V7240
72V7260
72V7270
72V7280
72V7290
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Untitled
Abstract: No abstract text available
Text: 2.5 VOLT HIGH-SPEED TeraSync FIFO IDT72T1845, IDT72T1855 18-BIT/9-BIT CONFIGURATIONS IDT72T1865, IDT72T1875 2,048 x 18/4,096 x 9, 4,096 x 18/8,192 x 9, 8,192 x 18/16,384 x 9, IDT72T1885, IDT72T1895 16,384 x 18/32,768 x 9, 32,768 x 18/65,536 x 9, 65,536 x 18/131,072 x 9,
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IDT72T1845,
IDT72T1855
18-BIT/9-BIT
IDT72T1865,
IDT72T1875
IDT72T1885,
IDT72T1895
IDT72T18105,
IDT72T18115
IDT72T18125
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IDT72T18105
Abstract: IDT72T18115 IDT72T18125 IDT72T1845 IDT72T1855 IDT72T1865 IDT72T1875 IDT72T1885 IDT72T1895
Text: 2.5 VOLT HIGH-SPEED TeraSync FIFO IDT72T1845, IDT72T1855 18-BIT/9-BIT CONFIGURATIONS IDT72T1865, IDT72T1875 2,048 x 18/4,096 x 9, 4,096 x 18/8,192 x 9, 8,192 x 18/16,384 x 9, IDT72T1885, IDT72T1895 16,384 x 18/32,768 x 9, 32,768 x 18/65,536 x 9, 65,536 x 18/131,072 x 9,
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IDT72T1845,
IDT72T1855
18-BIT/9-BIT
IDT72T1865,
IDT72T1875
IDT72T1885,
IDT72T1895
IDT72T18105,
IDT72T18115
IDT72T18125
IDT72T18105
IDT72T18115
IDT72T18125
IDT72T1845
IDT72T1855
IDT72T1865
IDT72T1875
IDT72T1885
IDT72T1895
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32kx18
Abstract: No abstract text available
Text: 2.5 VOLT HIGH-SPEED TeraSync FIFO PRELIMINARY IDT72T1845, IDT72T1855 18-BIT/9-BIT CONFIGURATIONS IDT72T1865, IDT72T1875 2,048 x 18/4,096 x 9, 4,096 x 18/8,192 x 9, 8,192 x 18/16,384 x 9, IDT72T1885, IDT72T1895 16,384 x 18/32,768 x 9, 32,768 x 18/65,536 x 9, 65,536 x 18/131,072 x 9,
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IDT72T1845,
IDT72T1855
18-BIT/9-BIT
IDT72T1865,
IDT72T1875
IDT72T1885,
IDT72T1895
IDT72T18105,
IDT72T18115
IDT72T18125
32kx18
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PDF
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Untitled
Abstract: No abstract text available
Text: A67P93181/A67P83361 Preliminary 512K X 18, 256K X 36 LVTTL, Flow-through ZeBLTM SRAM Document Title 512K X 18, 256K X 36 LVTTL, Flow-through ZeBLTM SRAM Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue July 12, 2005 Preliminary
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A67P93181/A67P83361
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723653
Abstract: 72V841 72825 72V3622 BI 7284 72V3613 723674 72V211 72V221 72V241
Text: Selector Guide for FIFO Memory Products • Synchronous FIFOs SuperSync II, SuperSync™ SyncFIFO™, DualSync™ • Bi-Directional Synchronous FIFOs • Asynchronous FIFOs the leading provider of FIFO memories. July’99/PC IDT FIFO Memory Products Width
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99/PC
28-TP
36-bit
18-bit
723653
72V841
72825
72V3622
BI 7284
72V3613
723674
72V211
72V221
72V241
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Untitled
Abstract: No abstract text available
Text: SM536512W April 1996 Rev 0 SMART Modular Technologies SM536512W 2MByte 512K x 36 CMOS DRAM Module General Description Features The SM536512W is a high performance, 2-megabyte dynamic RAM module organized as 512K words by 36 bits, in a 72-pin, leadless, SIMM package.
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SM536512W
SM536512W
72-pin,
512Kx8
512Kx1
60/70/80ns
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A67L06181
Abstract: A67L06181E A67L93361 A67L93361E 512Kx9
Text: A67L06181/A67L93361 1M X 18, 512K X 36 LVTTL, Flow-through ZeBLTM SRAM Document Title 1M X 18, 512K X 36 LVTTL, Flow-through ZeBLTM SRAM Revision History History Issue Date Remark 0.0 Initial issue August, 20, 2005 Preliminary 0.1 Modify DC specification to exact value
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A67L06181/A67L93361
A67L06181
A67L06181E
A67L93361
A67L93361E
512Kx9
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PDF
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A67L83361E
Abstract: A67L93181 A67L93181E
Text: A67L93181/A67L83361 512K X 18, 256K X 36 LVTTL, Flow-through ZeBLTM SRAM Document Title 512K X 18, 256K X 36 LVTTL, Flow-through ZeBLTM SRAM Revision History History Issue Date Remark 0.0 Initial issue July 13, 2005 Preliminary 0.1 Modify DC specification to exact value
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A67L93181/A67L83361
A67L83361E
A67L93181
A67L93181E
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PDF
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BGA 144
Abstract: 208 BGA 72T3665 240-BGA 72T36125
Text: Selector Guide for TeraSync FIFOs from the leading provider of FIFO solutions • 2.5V core voltage • 225 MHz high-speed operation • Densities up to 9 M-bit • 9, 18, 36, 72-bit configurations • BGA packaging, including JTAG TeraSync the next generation
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72-bit
16Kx72
32Kx72
64Kx72
128Kx72
72T7285
72T7295
72T72105
72T72115
72T3645
BGA 144
208 BGA
72T3665
240-BGA
72T36125
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72V273
Abstract: No abstract text available
Text: 3.3 VOLT HIGH-DENSITY SUPERSYNC II NARROW BUS FIFO 8,192 x 18/16,384 x 9 16,384 x 18/32,768 x 9 32,768 x 18/65,536 x 9 65,536 x 18/131,072 x 9 131,072 x 18/262,144 x 9 262,144 x 18/524,288 x 9 FEATURES: • • • • • • • • Choose among the following memory organizations:
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IDT72V263
IDT72V273
IDT72V283
IDT72V293
IDT72V2103
IDT72V2113
IDT72V263
IDT72V273
IDT72V283
IDT72V293
72V273
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PDF
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rdram
Abstract: MB814953 RDRAM Clock rambus channel
Text: i —* - Q> ~ 2 - 3 ' I FUJITSU LT» S3E D • 374175b □003427 122 « F C A J September 1992 Edition 1.1 DATA fíH F F T MB814953 4.5 MBIT RDRAM DESCRIPTION The MB814953 is a new generation ultra high speed CM OS Rambus™ DRAM organized as 512KX9. The MB814953 uses advanced circuit design techniques with standard
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OCR Scan
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374R7Sb
D0Q34S7
MB814953
MB814953
512KX9.
32-LEAD
VSMP-32P-M01)
V32001S-2C
rdram
RDRAM Clock
rambus channel
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PDF
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TC59R0409
Abstract: No abstract text available
Text: TOSHIBA TC59R0409 S i l i c o n g a t e CMOS 512KX9 RDRAM t a r g e t s p e c DESCRIPTION T h is a n ew g en eratio n ultra h ig h sp eed C M O S R am b u s™ D R A M org a n iz e d as 5 12K X 9. It u ses advanced circ u it d e sig n te c h n iq u es w ith stan d a rd C M O S p ro c e ss tech n o lo g y . T h e sense a m p lifie rs act as a cac h e and burst
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OCR Scan
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512KX
TC59R0409
TC59R0409
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PDF
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direct rdram rambus
Abstract: RDRAM Clock rambus channel fujitsu rdram
Text: September 1992 Edition 1.1 fujÍtsu DATA SHEET MB814953 4.5 MBIT RDRAM W DESCRIPTION The MB814953 is a new generation ultra high speed CMOS Rambus™ DRAM organized as 512KX9. The MB814953 uses advanced circuit design techniques with standard CMOS process technology. It utilizes the 18,432 sense amplifiers as a
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OCR Scan
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MB814953
512KX9.
MB814953-P
KV0005-929K1
direct rdram rambus
RDRAM Clock
rambus channel
fujitsu rdram
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PDF
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Untitled
Abstract: No abstract text available
Text: S A MS UN G E L E C T R O N I C S INC L.7E D • 7ib4142 0D15Ö57 7fl5 KM49C512A/AL/ALL CMOS DRAM 512Kx9 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM49C512A/AL/ALL is a CMOS high speed 524,288 bit x 9 Dynamic Random A ccess Memory.
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OCR Scan
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7ib4142
KM49C512A/AL/ALL
512Kx9
KM49C512A/AL/ALL
KM49C512A/AL/ALL-6
110ns
KM49C512A/AL/ALL-7
130ns
KM49C512A/AÃ
150ns
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PDF
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DRAM 64kx16
Abstract: dram zip 256kx16
Text: Changed Point in '96 DRAM Databook Compared with '95 databook Changed Point in '96 DRAM databook Remarks - Remove TSOP ll(reverse) package General - Remove 80ns version in 5V product - Remove SC Mode, WPB Mode product - Remove 512Kx9 and 256Kx18 product
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OCR Scan
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512Kx9
256Kx18
128Kx8,
64Kx16
512Kx8.
256Kx16
16Mx1,
1Mx16
16Mx4,
4Mx16
DRAM 64kx16
dram zip 256kx16
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PDF
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Untitled
Abstract: No abstract text available
Text: KM49C512A/AL/ALL CMOS DRAM 512Kx9 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM49C512A/AL/ALL is a CMOS high speed 524,288 bit x 9 Dynamic Random Access Memory. Its design is optimized for high performance applica
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OCR Scan
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KM49C512A/AL/ALL
512Kx9
KM49C512A/A
KM49C512A/AL/ALL-7
KM49C512A/AL/ALL-8
110ns
130ns
150ns
KM49C512A/AL/ALL
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PDF
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KM44C4000aS 6
Abstract: KM44C4000AS KM44C4000A-S km44c4100as KM48V2100AL KM416V256BL
Text: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION DRAM 4 M b it 4Mx1 1Mx4 KM41C4000C-6 KM41C4000C-7 " KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7 KM41C4000CL-8 - KM41C4002C-5 KM41C4002C-6 KM41C4002C-7 KM41C4002C-8 - KM41V4000C-6 KM41V4000C-7 KM41V4000C-8 - KM41V4000CL-6
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OCR Scan
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KM41C4000C-5
KM41C4000CL-5
KM41C4002C-5
KM41C4000C-6
KM41C4000C-7
KM41C4000CL-7
KM41C4002C-7
KM41V4000C-7
KM41V4000CL-7
KM41C4000C-8
KM44C4000aS 6
KM44C4000AS
KM44C4000A-S
km44c4100as
KM48V2100AL
KM416V256BL
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PDF
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Untitled
Abstract: No abstract text available
Text: STI361000D2 72-PIN DIMMS 1M X 36 DRAM DIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI361000D2 is a 1M br: x 36 Dynamic RAM high density memory module. The Simple Technology STI361000D2 consist of eight CMOS 512K x 9 Dits DRAMs in
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OCR Scan
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STI361000D2
72-PIN
STI361000D2
28-pin
I361000D
STI361000D2-60j
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PDF
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23C1001
Abstract: KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000
Text: FUNCTION GUIDE MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM 1Mx1 KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 4Mbit— 4Mx1 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 KM 44C256CL-8 - KM44C256CSL-6 KM44C256CL-7 KM 44C256CL-8 — KM41C4000C-7 — KM41C4000C-8 KM41C4000C-5
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OCR Scan
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KM41C1000C-6
KM41C1000CL-6
KM41C1000CSL-6
256Kx4
KM44C256C-6
KM44C256CL-6
KM44C256CL-7
44C256CL-8
KM44C256CSL-6
23C1001
KMM5334100
km 23c 4000B
KMM5362003C
KM681001-25
KM68V257
KM428V256
23c4001
4100C
M681000
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PDF
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KM424C256Z
Abstract: SIMM 30-pin 30-pin SIMM RAM KM41C256P KM44C256bp KM41C1000BJ 257J KM44C256BZ 1K x4 static ram 30-pin simm memory "16m x 8"
Text: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Number Capacity Organization Speed ns Technology Features Packages Remark 64K bit KM4164BP 100/120/150 NMOS Page Mode 16 Pin DIP Now 256K bit KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J
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OCR Scan
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KM4164BP
KM41C256P
KM41C256J
KM41C256Z
KM41C257P
KM41C257J
KM41C257Z
KM41C258P
KM41C258J
KM41C258Z
KM424C256Z
SIMM 30-pin
30-pin SIMM RAM
KM44C256bp
KM41C1000BJ
257J
KM44C256BZ
1K x4 static ram
30-pin simm memory "16m x 8"
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PDF
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KM418C256
Abstract: KM48C2100AL KM416C254 KM44V4100AL KM44C1003
Text: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE DRAM Density 1M bil Org. 1Mx1 Power Supply 5V±10% Part Number KM41C1000D# Speed(ns) 60/70/80 Features Fast Page 5V±10% KM44C256D# 60/70/80 Fast Page 4Mx1 5V±10% KM41C4000C# 50/60/70/80 Fast Page KM41C4002C# 60/70/80
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OCR Scan
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KM41C1000D#
KM41C10OOD-L#
256Kx4)
256Kx4
KM44C256D#
KM44C256D-L#
KM41C4000C#
KM41C4000CL#
KM41C4002C#
KM41V4000C#
KM418C256
KM48C2100AL
KM416C254
KM44V4100AL
KM44C1003
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